DE N06A. RF Power MOSFET. V DSS = 1000 V I D25 = 8 A R DS(on) = 1.6 Ω P DC = 590 W
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1 N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings V DSS T J = 5 C to 50 C 000 V V DGR T J = 5 C to 50 C; R GS = MΩ 000 V V GS Continuous ±0 V V GSM Transient ±30 V I D5 T c = 5 C 8 A I DM T c = 5 C, pulse width limited by T JM 48 A I AR T c = 5 C 6 A E AR T c = 5 C 0 mj dv/dt I S I DM, di/dt 00A/µs, V DD V DSS, T j 50 C, R G = 0.Ω 5 V/ns I S = 0 >00 V/ns DE75-0N06A GATE V DSS = 000 V I D5 = 8 A R DS(on) =.6 Ω P DC = 590 W DRAIN P DC 590 W P DHS T c = 5 C Derate.0W/ C above 5 C 300 W P DAMB T c = 5 C 3.0 W R thjc 0.5 C/W R thjhs 0.50 C/W Symbol Test Conditions Characteristic Values T J = 5 C unless otherwise specified min. typ. max. V DSS V GS = 0 V, I D = 3 ma 000 V V GS(th) V DS = V GS, I D = 4 ma V I GSS V GS = ±0 V DC, V DS = 0 ±00 na I DSS V DS = 0.8 V DSS T J = 5 C V GS = 0 T J = 5 C R DS(on) V GS = 5 V, I D = 0.5I D5 Pulse test, t 300µS, duty cycle d % 50 µa ma.6 Ω g fs V DS = 5 V, I D = 0.5I D5, pulse test 7.5 S R thjhs 0.50 C/W T J C T JM 75 C T stg C T L.6mm (0.063 in) from case for 0 s 300 C Weight g SG Features SG SD SD Isolated Substrate high isolation voltage (>500V) excellent thermal transfer Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances easier to drive faster switching Low R DS(on) Very low insertion inductance (<nh) No beryllium oxide (BeO) or other hazardous materials Advantages Optimized for RF and high speed switching at frequencies to 00MHz Easy to mount no insulators needed High power density
2 DE75-0N06A Symbol Test Conditions Characteristic Values (T J = 5 C unless otherwise specified) min. typ. max. R G 0.3 Ω C iss 800 pf C oss V GS = 0 V, V DS = 0.8 V DSS(max), f = MHz 3 0 pf C rss 5 pf C stray Back Metal to any Pin pf T d(on) 3 ns T on V GS = 5 V, V DS = 0.8 V DSS ns I D = 0.5 I DM T d(off) R G = 0. Ω (External) 4 ns T off 5 ns Q g(on) 50 nc Q gs V GS = 0 V, V DS = 0.5 V DSS I D = 0.5 I D5 0 nc Q gd 30 nc RF Characteristics in Class C 3.56MHz Fixture (Figure. Page 3) Symbol Test Conditions min. typ max. G PS V Supply = 50V, f=3.56mhz, Pout = 600W 5 7 db η (Eff) V Supply = 50V, f=3.56mhz, Pout = 600W 8 85 % ψ (Ruggedness) VSWR 0: Source-Drain Diode no degradation in output power Symbol Test Conditions min. typ. max. I S V GS = 0 V 6 A I SM Repetitive; pulse width limited by T JM 48 A V SD I F = I S, V GS = 0 V,.5 V Pulse test, t 300 µs, duty cycle % T rr 00 ns Q RM I F = I S, -di/dt = 00A/µs, V R = 00V 0.6 µc I RM 4 A For detailed device mounting and installation instructions, see the DE- Series MOSFET Mounting Instructions technical note on IXYS RF s web site at IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,59 4,850,07 4,88,06 4,89,686 4,93,844 5,07,508 5,034,796 5,049,96 5,063,307 5,87,7 5,37,48 5,486,75 5,38,05 5,640,045
3 DE75-0N06A % Efficiency Power (Watts) (db) Power (Watts) Figure 3. Reference Circuit in Figure. Figure 4. Reference Circuit in Figure. Pin (Watts) Pout (Watts) 0000 Figure 5. Reference Circuit in Figure. Ciss Coss Crss Capacitance (pf) Vds Figure 6. Capacitance vs Vds
4 DE75-0N06A +50 VDC FB GND C6A C6B L3 C3 L J J 3 T FB C4 C5 BNC BNC 4 : L C 3 Q C R Figure. 3.56MHz Class C RF Test Fixture. T - : Turns ratio, Ferronics binocular core P/N -365-J, a. Primary - turns of 6 AWG, single strand Teflon Wire. b. Secondary - turn of braid with the primary wire run inside of it.. L - < 90nH, 5 turns, 0.5" id, 8 AWG single strand magnet wire, 0.55" long. 3. C pf, 3 x 000pf, ATC capacitors, P/N 0KW. 4. C - 470pf, ATC capacitor, P/N 47JW. 5. R ohm, 3 x 0 ohm Caddock resistors, P/N MP Q - DE75-0N06A 7. C3-5nf, 5 x.00uf, ceramic disc capacitors, 8. C4-60pf - 00pf air variable capacitor 9. L - 800nH, 6 turns, " id, AWG single strand magnet wire, 0.85" long. 0. C5-50pf - 480pf mica compression capacitor, Sprague Goodman GME L3-5.4uH, 0 turns, 8 AWG single strand magnet wire, Micrometals core T-06-, powered iron core.. C6A - 0.0uf, x 0.0uf ceramic disc capacitors. 3. C6B uf, 8 x 0.0uf ceramic disc capacitors. 4. FB - 3 x 900mu ferrite beads on 8 AWG buss wire.
5 0N06A DE-SERIES SPICE Model DE75-0N06A The DE-SERIES SPICE Model is illustrated in Figure. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 0 DRAIN Ld 4 0 GATE Lg Doff Roff Dcrs 5 6 Dcrs 8 Rd Ron 3 M3 Dcos Rds Don 7 Ls 30 SOURCE Figure DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at Net List: *SYM=POWMOSN.SUBCKT 0N06A * TERMINALS: D G S * 000 Volt 6 Amp.6 Ohm N-Channel Power MOSFET M 3 3 DMOS L=U W=U RON DON 6 D ROF DOF 7 D DCRS 8 D DCRS 8 D CGS 3.9N RD 4.6 DCOS 3 D3 RDS 3 5.0MEG LS N LD 0 4 N LG 0 5 N.MODEL DMOS NMOS (LEVEL=3 VTO=4 KP=.3).MODEL D D (IS=.5F CJO=0P BV=00 M=.5 VJ=. TT=N).MODEL D D (IS=.5F CJO=400P BV=000 M=.6 VJ=.6 TT=N RS=0M).MODEL D3 D (IS=.5F CJO=400P BV=000 M=.35 VJ=.6 TT=400N RS=0M).ENDS Doc #900-0 Rev IXYS RF An IXYS Company 40 Research Blvd., Suite 08 Fort Collins, CO USA Fax: deiinfo@directedenergy.com Web:
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationUNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC s advanced technology to provide costumers
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UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche
More informationMOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)
APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationUNISONIC TECHNOLOGIES CO., LTD 3N80
UNISONIC TECHNOLOGIES CO., LTD 3N8 3. Amps, 8Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N8 provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationPower MOSFET FEATURES. IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L
Power MOSFET IRFP23N5L, SiHFP23N5L PRODUCT SUMMARY (V) 5 R DS(on) (Ω) V GS = V.9 Q g (Max.) (nc) 5 Q gs (nc) 44 Q gd (nc) 72 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free
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UNISONIC TECHNOLOGIES CO., LTD 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More information2N65 650V N-Channel Power MOSFET
R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. 4Ω @VGS=1V, ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA
More informationTO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 0.75Ω)@V GS =10V Low Gate Charge (Typ 43nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings
More informationMOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)
V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationIRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationPower MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N
Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
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HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationMOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)
APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement
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PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationFREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C
APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power
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Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK
More informationUNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
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