DE N20A RF Power MOSFET
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1 DE475-2N2A N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 15 C V V DGR T J = 25 C to 15 C; R GS = 1 MΩ V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 2 A I DM T c = 25 C, pulse width limited by T JM 12 A I AR T c = 25 C 2 A E AR T c = 25 C 3 mj dv/dt I S I DM, di/dt A/µs, V DD V DSS, T j 15 C, R G =.2Ω 5 V/ns I S = >2 V/ns P DC 18 W P DHS T c = 25 C Derate 4.4W/ C above 25 C 73 W P DAMB T c = 25 C 4.5 W R thjc.8 C/W R thjhs.2 C/W Symbol Test Conditions Characteristic Values T J = 25 C unless otherwise specified min. typ. max. V DSS V GS = V, I D = 3 ma V V GS(th) V DS = V GS, I D = 25 µa V I GSS V GS = ±2 V DC, V DS = ± na I DSS V DS =.8 V DSS T J = 25 C V GS = T J = 125 C 5 1 µa ma R DS(on) V GS = 15 V, I D =.5I D25.6 Ω Pulse test, t 3µS, duty cycle d 2% g fs V DS = 15 V, I D =.5I D25, pulse test 6 9 S T J C T JM 15 C T stg C T L 1.6mm (.63 in) from case for s 3 C Weight 3 g GATE SG1 Features V DSS = V I D25 = 2 A R DS(on).6 Ω P DC = 18W SG2 Isolated Substrate high isolation voltage (>25V) excellent thermal transfer Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances easier to drive faster switching Low R DS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages SD1 SD2 DRAIN Optimized for RF and high speed switching at frequencies to 3MHz Easy to mount no insulators needed High power density
2 DE475-2N2A Symbol Test Conditions Characteristic Values (T J = 25 C unless otherwise specified) min. typ. max. R G.3 Ω C iss 62 pf C oss V GS = V, V DS =.8 V DSS(max), f = 1 MHz 185 pf C rss 44 pf C stray Back Metal to any Pin 46 pf T d(on) 5 ns T on V GS = 15 V, V DS =.8 V DSS 5 ns I D =.5 I DM T d(off) R G =.2 Ω (External) 5 ns T off 8 ns Q g(on) 145 nc Q gs V GS = V, V DS =.5 V DSS I D =.5 I D25 28 nc Q gd 68 nc -Drain Diode Characteristic Values (T J = 25 C unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = V 2 A I SM Repetitive; pulse width limited by T JM 12 A V SD I F = I S, V GS = V, 1.5 V Pulse test, t 3 µs, duty cycle 2% T rr 2 ns Q RM I F = I S, -di/dt = A/µs, V R = V.6 µc I RM 14 A CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at; IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,86,72 4,881,6 4,891,686 4,931,844 5,17,58 5,34,796 5,49,961 5,63,37 5,187,117 5,237,481 5,486,715 5,381,25 5,64,45
3 Fig. 1 Typical Transfer Characteristics Fig. 2 V DS = 5V, PW = 15µS ID, Drain Current (A) ID, Drain Currnet (A) DE475-2N2A Typical Output Characteristics Top 8-V 7.5V 7V 6.5V 6V 5.5V Bottom 5V Fig V GS, Gate-to Voltage (V) Gate Charge vs. Gate-to- Voltage V GS = 5V, I D = A, Ig = 4mA Fig V DS, Drain-to- Voltage (V) Extended Typical Output Characteristics Gate-to- Voltage (V) ID, Drain Currnet (A) Top 9-V 8V 7.5V 7V 6.5V 6V Bottom 5.5V Gate Charge (nc) Fig. 5 VD S vs. Capacitance V DS, Drain-to- Voltage (V) Ciss Capacitance (pf) Coss Crss VDS Voltage (V)
4 DE475-2N2A Fig. 6 Package Drawing Gate Drain
5 2N2A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. DE475-2N2A Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at Net List:.SUBCKT 2N2A 2 3 * TERMINALS: D G S * Volt 2 Amp.6 ohm N-Channel Power MOSFET * REV.A M DMOS L=1U W=1U RON DON 6 2 D1 ROF DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS N RD DCOS 3 1 D3 RDS MEG LS 3 3.5N LD 4 1N LG 2 5 1N.MODEL DMOS NMOS (LEVEL=3 VTO=3. KP=3.8).MODEL D1 D (IS=.5F CJO=1P BV= M=.5 VJ=.6 TT=1N).MODEL D2 D (IS=.5F CJO=4P BV= M=.4 VJ=.6 TT=4N RS=M).MODEL D3 D (IS=.5F CJO=9P BV= M=.3 VJ=.4 TT=4N RS=M).ENDS Doc # Rev 6 29 IXYS RF An IXYS Company 241 Research Blvd., Suite 8 Fort Collins, CO USA Fax: sales@ixyscolorado.com Web:
6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: 475-2N2A-
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