DE N15A RF Power MOSFET

Transcription

1 N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching 5MHz Maximum Frequency Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C V V DGR T J = 25 C to 5 C; R GS = MΩ V V GS Continuous ±2 V V GSM Transient ±3 V I D25 T c = 25 C 5 A I DM T c = 25 C, pulse width limited by T JM 9 A I AR T c = 25 C 5 A E AR T c = 25 C J DE375-2N5A V DSS = V I D25 = 5 A R DS(on). Ω P DC = 94 W dv/dt I S I DM, di/dt A/µs, V DD V DSS, T j 5 C, R G =.2Ω 5 V/ns I S = >2 V/ns P DC 94 W DRAIN P DHS T c = 25 C Derate 3.7W/ C above 25 C 425 W GATE P DAMB T c = 25 C 4.5 W Symbol Test Conditions Characteristic Values SG SG2 SD SD2 T J = 25 C unless otherwise specified min. typ. max. V DSS V GS = V, I D = 3 ma V V GS(th) V DS = V GS, I D = ma V I GSS V GS = ±2 V DC, V DS = ± na I DSS V DS =.8 V DSS T J = 25 C V GS = T J = 25 C R DS(on) V GS = 5 V, I D =.5I D25 Pulse test, t 3µS, duty cycle d 2% R thjc R thjhs.3 5 µa ma. Ω.3 C/W C/W g fs V DS = 5 V, I D =.5I D25, pulse test.3 3. S T J C T JM 5 C T stg C T L.6mm (.63 in) from case for s 3 C Features Isolated Substrate -High isolation voltage (>25V) -Excellent thermal transfer -Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances -Easier to drive -Faster switching Low R DS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages Optimized for RF and high speed switching at frequencies to 5MHz Easy to mount no insulators needed High power density Weight 3 g

2 Symbol Test Conditions Characteristic Values DE375-2N5A (T J = 25 C unless otherwise specified) min. typ. max. R G.2 Ω C iss 3 pf C oss V GS = V, V DS =.8 V DSS(max), f = MHz 93 pf C rss 9 pf C stray Back Metal to any Pin 33 pf T d(on) 5 ns T on V GS = 5 V, V DS =.8 V DSS 3 ns I D =.5 I DM T d(off) R G =.2 Ω (External) 5 ns T off 8 ns Q g(on) 57 nc Q gs V GS = V, V DS =.5 V DSS I D =.5 I D25 24 nc Q gd 22 nc -Drain Diode Characteristic Values (T J = 25 C unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = V 5 A I SM Repetitive; pulse width limited by T JM 72 A V SD I F = I S, V GS = V,.4 V Pulse test, t 3 µs, duty cycle 2% T rr 25 ns Q RM I F = I S, -di/dt = A/µs, V R = V.66 µc I RM 7.6 A CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at; IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,86,72 4,88,6 4,89,686 4,93,844 5,7,58 5,34,796 5,49,96 5,63,37 5,87,7 5,237,48 5,486,75 5,38,25 5,64,45

3 Fig. Fig. 2 Typical Transfer Characteristics ID, Drain Current (A) V DS = 5V V GS, Gate to (V) ID, Drain Currnet (A) 5 5 DE375-2N5A Typical Output Characteristics 2V V 9V 8V 7.5V 7V 6.5V V DS, Drain to (V) Fig V GS,Gate to (V) Fig. 4 Gate Charge vs. Gate to Voltage Gate Charge (nc) ID, Drain Currnet (A) 3 2 Extended Typical Output Characteris tics 7V 2V V V 7.5V V DS, Drain to (V) 9V Fig. 5 Capacitance vs. V DS Fig. 6 Maximum Transient Thermal Impedance. C ISS Capacitance (pf) C OSS C RSS Z(th)JC - ºC/W V DS, Drain to (V)..... Pulse Tim e - Seconds

4 DE375-2N5A Fig. 7 Fig. 8 Transfer Curve vs. Temperature Normalized V GS(TH) vs. Temperature V DS = 5V I D = ma ID, Drain Current (A) C 25 C 5 C V GS, Gate to (V) V GS(TH) Normalized Tem perature C Fig. 9. Normalized G FS vs. Temperature I D = 7.5A V DS = 5V Fig. 2.5 Normalized R DS(ON) vs. Temperature I D = 7.5A V GS = V G FS Normalized R DS(ON) Normalized Temperature ( C) Tem perature ( C)

5 DE375-2N5A Fig. Package Drawing Gate Drain

6 2N5A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 2. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. DE375-2N5A Figure 2 DE-SERIES SPICE Model Net List:.SUBCKT 2N5A 2 3 * TERMINALS: D G S * Volt 5 Amp ohm N-Channel Power MOSFET * REV.A 2--2 M DMOS L=U W=U RON DON 6 2 D ROFF 5 7. DOF 2 7 D DCRS 2 8 D2 D2CRS 8 D2 CGS N RD 4. DCOS 3 D3 RDS 3 5.MEG LS 3 3.5N LD 4 N LG 2 5 N.MODEL DMOS NMOS (LEVEL=3 VTO=3. KP=3.8).MODEL D D (IS=.5F CJO=P BV= M=.5 VJ=.6 TT=N).MODEL D2 D (IS=.5F CJO=4P BV= M=.4 VJ=.6 TT=4N RS=M).MODEL D3 D (IS=.5F CJO=9P BV= M=.3 VJ=.4 TT=4N RS=M).ENDS 5C Rev. 22 IXYS RF An IXYS Company Fort Collins, CO USA Fax: sales@ixyscolorado.com Web: