W24512A 64K 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION FEATURES BLOCK DIAGRAM PIN CONFIGURATIONS PIN DESCRIPTION
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1 W2452 GNR CRIPTION 64K 8 HIGH P CMO TTIC RM The W2452 is a high speed, low power CMO stati RM organized as bits that operates on a single 5-volt power supply. This devie is manufatured using Winbond's high performane CMO tehnology. FTUR High speed aess time: 5/20/25/35 n (max.) ow power onsumption: tive: 500 mw (typ.) ingle +5V power supply Fully stati operation PIN CONFIGURTION ll inputs and outputs diretly TT ompatible Three-state outputs vailable pakages: 32-pin 300 mil OJ, skinny IP, 450 mil OP, and standard type one TOP BOCK IGRM NC NC V 5 V V W COR COR C O R RRY O 0 O W CONTRO T I/O I/O.. I/O I/O8 I/O 3 20 I/O W 5 V NC NC I/O2 I/O3 V pin TOP I/O6 I/O5 I/O O 0 I/O8 I/O7 I/O6 I/O5 I/O4 V I/O3 I/O2 I/O PIN CRIPTION YMBO CRIPTION 0 5 ddress Inputs I/O I/O8 ata Inputs/Outputs, Chip elet Inputs W Write nable Input O Output nable Input V Power upply V Ground NC No Connetion Publiation Release ate: Marh Revision 7
2 W2452 TRUTH TB O W MO I/O- I/O8 V CURRNT H X X X Not eleted High Z IB, IB X X X Not eleted High Z IB, IB H H H Output isable High Z I H H Read ata Out I H X Write ata In I C CHRCTRITIC bsolute Maximum Ratings PRMTR RTING UNIT upply Voltage to V Potential -0.5 to +7.0 V Input/Output to V Potential -0.5 to V +0.5 V llowable Power issipation.0 W torage Temperature -65 to +50 C Operating Temperature 0 to +70 C Note: xposure to onditions beyond those listed under bsolute Maximum Ratings may adversely affet the life and reliability of the devie. Operating Charateristis (V = 5V ±0%, V = 0V, T = 0 to 70 C) PRMTR YM. TT CONITION MIN. TYP. MX. UNIT Input ow Voltage VI V Input High Voltage VIH V +0.5 V Input eakage Current II VIN = V to V µ Output eakage Current IO VI/O = V to V = VIH or = VI or O = VIH or W = VI µ Output ow Voltage VO IO = +8.0 m V Output High Voltage VOH IOH = -4.0 m V Operating Power I = VI, = VIH m upply Current I/O = 0 m, Cyle = min tandby Power upply Current IB IB Note: Typial harateristis are at V = 5V, T = 25 C. uty = 00% = VIH or = VI Cyle = min., uty = 00% V -0.2V or 0.2V m m - 2 -
3 W2452 CPCITNC (V = 5V, T = 25 C, f = MHz) PRMTR YM. CONITION MX. UNIT Input Capaitane CIN VIN = 0V 8 pf Input/Output Capaitane CI/O VOUT = 0V 0 pf Note: These parameters are sampled but not 00% tested. THRM RITNC PRMTR YM. CONITION MX. UNIT Juntion to Case Thermal Resistane θjc. F. R. = m/se, T = 25 C 20 C/W Juntion to mbient Thermal Resistane Note: These parameters are only applied to "TOP" and "OJ" pakage types. C CHRCTRITIC C Test Conditions Input Pulse evels PRMTR Input Rise and Fall Times θj. F. R. = m/se, T = 25 C 60 C/W 0V to 3V 5 n Input and Output Timing Referene evel.5v Output oad C Test oads and Waveform CONITION C = 30 pf, IOH/IO = -4 m/8 m 5V OUTPUT R 480 ohm 30 pf Inluding Jig and ope R2 255 ohm 5V OUTPUT R 480 ohm 5 pf Inluding Jig and ope (For T CZ, TCZ2, TOZ, TCHZ, TCHZ2, TOHZ, TWHZ, T OW) R2 255 ohm 3.0V 90% 90% 0V 5 n 0% 0% 5 n Publiation Release ate: Marh Revision 7
4 W2452 C Charateristis, ontinued (V = 5V ±0%, V = 0V, T = 0 to 70 C) Read Cyle PRMTR YM. W W W W UNIT MIN. MX. MIN. MX. MIN. MX. MIN. MX. Read Cyle Time TRC n ddress ess Time T n Chip elet ess Time T n T n Output nable to Output Valid TO n Chip eletion to Output in ow Z TCZ* n TCZ2* n Output nable to Output in ow Z TOZ* n Chip eseletion to Output in TCHZ* n High Z TCHZ2* n Output isable to Output in High Z TOHZ* n Output Hold from ddress Change TOH n * These parameters are sampled but not 00% tested. Write Cyle PRMTR YM. W W W W UNIT MIN. MX. MIN. MX. MIN. MX. MIN. MX. Write Cyle Time TWC n Chip eletion to nd of Write TCW n TCW n ddress Valid to nd of Write TW n ddress etup Time T n Write Pulse Width TWP n Write Reovery Time, W TWR n TWR n ata Valid to nd of Write TW n ata Hold from nd of Write TH n Write to Output in High Z TWHZ* n Output isable to Output in High Z TOHZ* n Output tive from nd of Write TOW n * These parameters are sampled but not 00% tested
5 W2452 TIMING WVFORM Read Cyle (ddress Controlled) TRC ddress TOH T TOH OUT Read Cyle 2 (Chip elet Controlled) T TCHZ T OUT TCZ TCZ2 TCHZ2 Read Cyle 3 (Output nable Controlled) TRC ddress T O TO TOZ T TCZ TOH TCHZ OUT T TCZ2 TCHZ2 TOHZ Publiation Release ate: Marh Revision 7
6 W2452 Timing Waveforms, ontinued Write Cyle (O Clok) T WC ddress TWR O T CW T CW2 W T T W T WP TWR2 OUT TOHZ (, 4) T W TH IN Write Cyle 2 (O = VI Fixed) TWC ddress TCW TWR TCW2 W T TW TWP TWR2 TOH OUT TWHZ (, 4) TOW (2) (3) TW TH IN Notes:. uring this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from OUT are the same as the data written to IN during the write yle. 3. OUT provides the read data for the next address. 4. Transition is measured ±500 mv from steady state with C = 5 pf. This parameter is guaranteed but not 00% tested
7 W2452 ORRING INFORMTION Notes: PRT NO. CC TIM (n) OPRTING CURRNT MX. (m) TNBY CURRNT MX. (m) PCKG W2452K mil skinny IP W2452K mil skinny IP W2452K mil skinny IP W2452K mil skinny IP W2452J mil OJ W2452J mil OJ W2452J mil OJ W2452J mil OJ W mil OP W mil OP W mil OP W mil OP W2452T standard type one TOP W2452T standard type one TOP W2452T standard type one TOP W2452T standard type one TOP. Winbond reserves the right to make hanges to its produts without prior notie. 2. Purhasers are responsible for performing appropriate quality assurane testing on produts intended for use in appliations where personal injury might our as a onsequene of produt failure. Publiation Release ate: Marh Revision 7
8 W2452 PCKG IMNION 32-pin OJ H e ymbol 2 B b e e H e Y θ imension in Inhes imension in mm Min. Nom. Max. Min. Nom. Max B b e e θ eating Plane Y 32-pin O Wide Body 32 7 H e imension in Inhes imension in mm ymbol Min. Nom. Max. Min. Nom. Max b e b 6 etail F H y θ eating Plane y e 2 e ee etail F Notes:. imension Max. & inlude mold flash or tie bar burrs. 2. imension b does not inlude dambar protrusion/intrusion. 3. imension & inlude. mold mismath and are determined at the mold parting line. 4. Controlling dimension: Inhes. 5. General appearane spe should be based on final visual inspetion spe
9 W2452 Pakage imensions, ontinued 32-pin TOP H ymbol imension in Inhes imension in mm Min. Nom. Max. Min. Nom. Max M e b (0.004) b H e θ 2 Y Y θ Note: Controlling dimension: Millimeter 32-pin P-IP kinny (300 mil) imension in Inhes imension in mm ymbol Min. Nom. Max. Min. Nom. Max B B e B B e Base Plane Mounting Plane a e a 0 e Notes: imension Max. & inlude mold flash or tie bar burrs. 2. imension does not inlude interlead flash. 3. imension & inlude mold mismath and are determined at the mold parting line. 4. imension B does not inlude dambar protrusion/intrusion. 5. Controlling dimension: Inhes. 6. General appearane spe. should be based on final visual inspetion spe Publiation Release ate: Marh Revision 7
10 W2452 VRION HITORY VRION T PG CRIPTION 7 Mar rrange aess time for 5/20/25/35 n Headquarters Winbond letronis (H.K.) td. No. 4, Creation Rd. III, Rm. 803, World Trade quare, Tower II, iene-based Industrial Park, 23 Hoi Bun Rd., Kwun Tong, Hsinhu, Taiwan Kowloon, Hong Kong T: T: FX: FX: Voie & Fax-on-demand: Taipei Offie F, No. 5, e. 3, Min-heng ast Rd., Taipei, Taiwan T: FX: Winbond letronis North meria Corp. Winbond Memory ab. Winbond Miroeletronis Corp. Winbond ystems ab Orhard Parkway, an Jose, C 9534, U... T: FX: Note: ll data and speifiations are subjet to hange without notie
11 This datasheet has been downloaded from: atasheets for eletroni omponents.
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32K x 8 LOW VOLTAGE CMOS STATIC RAM MAY 2012 FEATURES High-speed access time: 20, 45 ns Automatic power-down when chip is deselected CMOS low power operation 17 µw (typical) CMOS standby 50 mw (typical)
Package Code. Handling Code Temperature Range. TR:Tape & Reel. G:Halogen and Lead Free Device
P-Channel Enhanement Mode MOSFET Features -4V/-74A, R DS(ON) = 8mΩ (max.) @ V GS =-2V R DS(ON) = 9.4mΩ (max.) @ V GS =-1V R DS(ON) = 15mΩ (max.) @ V GS =-4.5V HBM ESD apability level of 8KV typial 1% UIS
MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount
Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection
IDT74FCT2374AT/CT FAST CMOS OCTAL D REGISTER (3-STATE)
IT74FCT2374AT/CT FAST CMOS OCTAL REGISTER (3-STATE) FAST CMOS OCTAL REGISTER (3-STATE) INUSTRIAL TEMPERATURE RANGE IT74FCT2374AT/CT FEATURES: A and C grades Low input and output leakage 1µA (max.) CMOS
54AC11533, 74AC11533 OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS
5A1533, 7A1533 TAL D-TYPE TRANSPARENT LATHES SAS00 D257, JULY 187 REVISED APRIL 13 8-Latches in a Single Package 3-State Bus-Driving Inverting s Full Parallel Access for Loading Buffered ontrol Inputs
IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS
ISWVALL/ALS ISWVBLL/BLS K x HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM FEATURES HIGH SPEED: (IS/WVALL/BLL) High-speed access time:,, 0 ns Low Active Power: mw (typical) Low Standby Power: mw (typical) CMOS
IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL
1M x 16 HIGH-SPEED LOW POR ASYNCHRONOUS CMOS STATIC RAM JANUARY 2008 FEATURES High-speed access times: 25, 35 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater
Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free
IS62WV25616ALL IS62WV25616BLL
IS62WV25616ALL IS62WV25616BLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2008 FEATURES High-speed access time: 55ns, 70ns CMOS low power operation 36 mw (typical) operating 9 µw (typical)
IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS
256K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: (IS61/64C25616AL) High-speed access time: 10ns, 12 ns Low Active Power: 150 mw (typical) Low Standby Power: 10 mw (typical) CMOS standby LOW POR:
Freescale Semiconductor, I VDD VSS
nc. SEMICONDUCTOR TECHNICL DT Order this document by MCM6926/D dvance Information 128K x 8 Bit Fast Static Random ccess Memory The MCM6926 is a 1,048,576 bit static random access memory organized as 131,072
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVER
IDT74FCT2245T/CT FST CMOS OCTL BIDIRECTIONL TRNSCEIVER FST CMOS OCTL BIDIRECTIONL TRNSCEIVER INDUSTRIL TEMPERTURE RNGE IDT74FCT2245T/CT FETURES: and C grades Low input and output leakage 1μ (max.) CMOS
LC 2 MOS Precision 5 V Quad SPST Switches ADG661/ADG662/ADG663
a FEATURE +5 V, 5 V Power upplies Ultralow Power issipation (
IDT74FCT257AT/CT/DT FAST CMOS QUAD 2-INPUT MULTIPLEXER
FAST CMOS QUAD 2-INPUT MULTIPLEXER IDT74FCT257AT/CT/DT FEATURES: A, C, and D grades Low input and output leakage 1µA (max.) CMOS power levels True TTL input and output compatibility: VOH = 3. (typ.) VOL
IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS IS64WV6416DBLL/DBLS
ISWVDALL/DALS ISWVDBLL/DBLS K x HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JANUARY 0 FEATURES HIGH SPEED: (IS/WVDALL/DBLL) High-speed access time:, 0,, 0 ns Low Active Power: mw (typical) Low Standby Power:
DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
32K x 8 HIGH-SPEED CMOS STATIC RAM OCTOBER 2006 FEATURES High-speed access time: 10, 12 ns CMOS Low Power Operation 1 mw (typical) CMOS standby 125 mw (typical) operating Fully static operation: no clock
DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY JULY 2006 FEATURES High-speed access time: 10, 12 ns CMOS low power operation Low stand-by power: Less than 5 ma (typ.) CMOS stand-by
IS62C10248AL IS65C10248AL
IS62C10248AL IS65C10248AL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation 36 mw (typical) operating 12 µw (typical) CMOS standby
IS61WV2568EDBLL IS64WV2568EDBLL
ISWVEDBLL ISWVEDBLL K x HIGH SPEED ASYHRONOUS CMOS STATIC RAM WITH ECC FEATURES High-speed access time:, ns Low Active Power: mw (typical) Low Standby Power: mw (typical) CMOS standby Single power supply
IS62WV20488ALL IS62WV20488BLL
2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM August 2016 FEATURES High-speed access times: 25, 35 ns High-performance, low-power CMOS process Multiple center power and ground pins for greater noise immunity
IS62C51216AL IS65C51216AL
IS62C51216AL IS65C51216AL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES High-speed access time: 45ns, 55ns CMOS low power operation 36 mw (typical) operating 12 µw (typical) CMOS standby
IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY OCTOBER 2009 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground
Very Low Power/Voltage CMOS SRAM 1M X 16 bit DESCRIPTION. SPEED (ns) 55ns : 3.0~3.6V 70ns : 2.7~3.6V BLOCK DIAGRAM
Very Low Power/Voltage CMOS SRAM 1M X 16 bit (Dual CE Pins) FEATURES operation voltage : 27~36V Very low power consumption : = 30V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating
MCM M x 4 Bit Static Random Access Memory SEMICONDUCTOR TECHNICAL DATA MCM6949 MOTOROLA FAST SRAM
SEMICONDUCTOR TECHNICL DT Order this document by /D 1M x 4 Bit Static Random ccess Memory The is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. Static design eliminates
IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM FEATURES High-speed access time: 35, 45, 55 ns CMOS low power operation 30 mw (typical) operating 6 µw (typical) CMOS standby TTL compatible interface
DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
64K x 16 HIGH-SPEED CMOS STATIC RAM OCTOBER 2006 FEATURES High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V CMOS low power operation: 50 mw (typical) operating 25 µw (typical) standby TTL compatible
IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL
1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MAY 2012 FEATURES High-speed access times: 8, 10, 20 ns High-performance, low-power CMOS process Multiple center power and ground pins for
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION. SPEED ( ns ) STANDBY. ( ICCSB1, Max ) BLOCK DIAGRAM
Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable FEATURES DESCRIPTION Very low operation voltage : 45 ~ 55V Very low power consumption : = 50V C-grade: 40mA (Max) operating current
IS61WV3216DALL/DALS IS61WV3216DBLL/DBLS IS64WV3216DBLL/DBLS
IS61WV3216DALL/DALS IS61WV3216DBLL/DBLS 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM MAY 2012 FEATURES HIGH SPEED: (IS61/64WV3216DALL/DBLL) High-speed access time: 8, 10, 12, 20 ns Low Active Power:
MCM6206BB. Product Preview 32K x 8 Bit Fast Static RAM SEMICONDUCTOR TECHNICAL DATA MCM6206BB MOTOROLA FAST SRAM
SEMICONDUCTOR TECHNICL DT Order this document by /D Product Preview 32K x 8 Bit Fast Static RM The is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates
MCM M x 4 Bit Static Random Access Memory. Freescale Semiconductor, I SEMICONDUCTOR TECHNICAL DATA MCM6949
nc. SEMICONDUCTOR TECHNICL DT Order this document by /D 1M x 4 Bit Static Random ccess Memory The is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. Static design eliminates
DESCRIPTION DECODER I/O DATA CIRCUIT CONTROL CIRCUIT
28K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY JUNE 2005 FEATURES High-speed access time: 8, 0 ns CMOS low power operation 756 mw (max.) operating @ 8 ns 36 mw (max.) standby @ 8 ns TTL compatible
13-MEMORY TONE/PULSE DIALER WITH SAVE, KEYTONE, LOCK, AND HANDFREE FUNCTIONS
1-MEMORY TONE/PULSE DIALER WITH SAVE, KEYTONE, LOCK, AND HANDFREE FUNCTIONS GENERAL DESCRIPTION The W9150N series are tone/pulse switchable telephone dialers with 1 memories, keytone or lock, and handfree
CD4094. CMOS 8-Stage Shift-and-Store Bus Register. Pinout. Features. Functional Diagram Applications. Description. December 1992
C494 ecember 1992 CMOS 8-Stage Shift-and-Store Bus Register Features Pinout High Voltage Type (2V Rating) 3-State Parallel Outputs for Connection to Common Bus C494BMS TOP VIEW Separate Serial Outputs
PI3USB221. High-Speed USB2.0 1:2 Multiplexer/ DeMultiplexer Switch with Signal Enable
High-peed UB2.0 1:2 Multiplexer/ emultiplexer witch with ignal Enable Features Operation at 2.5 V and 3.3 V V I/O Accepts ignals up to 5.5 V 1.8-V Compatible Control-Pin Inputs Low-Power Mode When OE Is
Functional Block Diagram. Row Decoder. 512 x 512 Memory Array. Column I/O. Input Data Circuit. Column Decoder A 9 A 14. Control Circuit
32K X 8 STATIC RAM PRELIMINARY Features High-speed: 35, 70 ns Ultra low DC operating current of 5mA (max.) Low Power Dissipation: TTL Standby: 3 ma (Max.) CMOS Standby: 20 µa (Max.) Fully static operation