White Electronic Designs
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1 * 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 4 lead, 2mm CQFP, (Package 511) Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs 3.3V Power Supply Low Power CMOS Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight grams typical *This product is under development, is not qualified or characterized and is subject to change without notice. PIN CONFIGURATION FOR TOP VIEW PIN DESCRIPTION A0 A1 A2 A3 A4 A5 A6 OE#1 OE#2 OE#3 OE#4 A7 A A9 A10 A11 A12 A I/O31 I/O30 I/O29 I/O2 I/O27 I/O26 I/O I/O24 I/O23 I/O22 I/O21 I/O20 I/O19 I/O1 I/O17 I/O WE#4 WE#3 WE#2 WE#1 A1 A17 A16 A15 A14 CS#1 A0-1 OE#1 WE#1 I/O0-31 Data Inputs/Outputs A0-1 Address Inputs WE#1-4 Write Enables CS#1-2 Chip Selects OE#1-4 Output Enables +3.3V Power Supply Ground Not Connected BLOCK DIAGRAM OE#2 WE#2 OE#3 WE#3 OE#4 WE# K 2M x x 512K x 512K 2M x x 512K x 512K 2M x x 512K 2M x 512K x 512K x I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS#1 CS#2 I/O I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 CS#2 I/O0-7 I/O-15 I/O16-23 I/O24-31 Note: CS#1& CS#2 are used as bank select The WEDC 4 lead G3 CQFP fills the same fit and function as the JEDEC 4 lead CQFJ or 4 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form " 1 White Electronic Designs Corporation (602)
2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit Operating Temperature TA C Storage Temperature TSTG C Signal Voltage Relative to VG V Junction Temperature TJ 150 C Supply Voltage V TRUTH TABLE CS# OE# WE# Mode Data I/O Power H X X Standby High Z Standby L L H Read Data Out Active L X L Write Data In Active L H H Out Disable High Z Active RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage V Input High Voltage VIH V Input Low Voltage VIL V CAPACITAE TA = +25 C Parameter Symbol Conditions Max Unit OE#1-4 capacitance COE VIN = 0V, f = 1.0MHz 20 pf WE#1-4 capacitance CWE VIN = 0V, f = 1.0MHz 20 pf CS#1-2 capacitance CCS VIN = 0V, f = 1.0MHz 50 pf Data I/O capacitance CI/O VI/O = 0V, f = 1.0MHz 20 pf Address input capacitance CAD VIN = 0V, f = 1.0MHz 70 pf This parameter is guaranteed by design, but not tested. DC CHARACTERISTICS = 3.3V ± 0.3V, -55 C TA +125 C Parameter Symbol Conditions Min Max Units Input Leakage Current ILI VIN = to 10 μa Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = to 10 μa Operating Supply Current (x 32 Mode) ICC x 32 CS# = VIL, OE# = VIH, f = 5MHz, = 3.6V 520 ma Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, = 3.6V 400 ma Output Low Voltage VOL IOL = 4.0mA 0.4 V Output High Voltage VOH IOH = -4.0mA 2.4 V NOTE: DC test conditions: VIH = -0.3V, VIL = 0.3V Contact Factory for low power option. 2 White Electronic Designs Corporation (602)
3 AC CHARACTERISTICS = 3.3V, = 0V, -55 C TA +125 C Parameter Symbol Read Cycle Min Max Min Max Min Max Units Read Cycle Time trc ns Address Access Time taa ns Output Hold from Address Change toh ns Chip Select Access Time tacs ns Output Enable to Output Valid toe ns Chip Select to Output in Low Z tclz ns Output Enable to Output in Low Z tolz ns Chip Disable to Output in High Z tchz ns Output Disable to Output in High Z tohz ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS = 3.3V, = 0V, -55 C TA +125 C Parameter Symbol Write Cycle Min Max Min Max Min Max Units Write Cycle Time twc ns Chip Select to End of Write tcw ns Address Valid to End of Write taw ns Data Valid to End of Write tdw ns Write Pulse Width twp ns Address Setup Time tas ns Address Hold Time tah ns Output Active from End of Write tow ns Write Enable to Output in High Z twhz ns Data Hold Time tdh ns 1. This parameter is guaranteed by design but not tested. AC TEST CIRCUIT IOL Current Source D.U.T. Ceff = 50 pf IOH Current Source VZ 1.5V (Bipolar Supply) AC TEST CONDITIONS Parameter Typ Unit Input Pulse Levels VIL = 0, VIH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. 3 White Electronic Designs Corporation (602)
4 TIMING WAVEFORM - READ CYCLE trc taa trc CS# taa tacs tchz tclz toh OE# PREVIOUS toe tohz tolz READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) HIGH IMPEDAE READ CYCLE 2 (WE# = VIH) WRITE CYCLE - WE# CONTROLLED twc taw tcw tah CS# tas twp WE# tow twhz tdw tdh WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE - CS# CONTROLLED twc taw tas tcw tah CS# twp WE# tdw tdh WRITE CYCLE 2, CS# CONTROLLED 4 White Electronic Designs Corporation (602)
5 PACKAGE 511: 4 LEAD, CERAMIC QUAD FLAT PACK (G3) (1.190) ± 0.25 (0.010) SQ 27.1 (1.070) ± 0.25 (0.010) SQ 4.29 (0.169) ± 0.2 (0.011) 4.12 (0.162) ± 0.20 (0.00) 0.25 (0.010) ± 0.03 (0.002) R (0.005) MIN (1.146) ± 0.25 (0.010) 1/ (0.00) ± 0.06 (0.003) 1.02 (0.040) ± 0.12 (0.005) DETAIL A 1.27 (0.050) TYP 0.3 (0.015) ± 0.05 (0.002) 0.27 (0.011) ± 0.04 (0.001) SEE DETAIL A (1.000) TYP The WEDC 4 lead G3 CQFP fi lls the same fi t and function as the JEDEC 4 lead CQFJ or 4 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form " ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN IHES 5 White Electronic Designs Corporation (602)
6 ORDERING INFORMATION W S 1M32 V - XX G3 X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military -55 C to +125 C C = Commercial -40 C to +5 C I = Industrial 0 to +70 C PACKAGE TYPE: G3 = 2 mm CQFP (Package 511) ACCESS TIME (ns) Low Voltage Supply 3.3V ± 10% ORGANIZATION, two banks of 512Kx32 SRAM User confi gurable as 2Mx16 or 4Mx WHITE ELECTRONIC DESIGNS CORP. 6 White Electronic Designs Corporation (602)
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