GS61008T Top cooled 100V enhancement mode GaN transistor Preliminary Datasheet

Transcription

1 Features 100V enhancement mode power switch Top cooled configuration Ultra low FOM Island Technology die Low inductance GaNPX package Reverse current capability Zero reverse recovery loss RoHS 6 compliant Applications 48V DC-DC conversion Telecom & Cloud Computing Systems Automotive Systems Energy Storage Systems AC-DC power supplies (secondary) VHF very small form-factor AC-DC Adapter Appliances and power tools top view G D S TP G TP = thermal pad - internally connected to the source (S) and to the substrate. circuit symbol Absolute Maximum Ratings (T case = 25 C except as noted) Parameters Symbol Value Unit Operating Junction Temperature T J -55 to +150 C Storage Temperature Range T S -55 to +150 C Drain-to-Source Voltage V DS 100 V Gate-to-Source Voltage V GS -10 to + 7 V Gate-to-Source Voltage - transient V GS ±10 V Continuous Drain Current (T case=25 C) (Note 1) I DS(cont)25 90 Continuous Drain Current (T case=100 C) I DS(cont) A Pulsed Drain Current (T case=25 C) I DS(pulse) 135 (1) Limited by saturation Preliminary Rev GaN Systems Inc. 1

2 Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction to case) R ΘJC 0.55 Thermal Resistance (junction to ambient) R ΘJA 55 C /W Maximum Soldering Temperature (MSL3 rated) T SOLD 260 C Ordering Information Part number Package type Ordering code Packing method GS61008T GaNPX top-cooled GS61008T-TR Tape-and-reel GS61008T GaNPX top-cooled GS61008T-MR Mini-reel Preliminary Rev GaN Systems Inc. 2

3 Electrical Characteristics (Typical values at T CASE= 25 C unless otherwise noted) Parameters Symbol Value Units Conditions (Note 2) Drain-to-Source Breakdown Voltage BV DSS 100 V Drain-to-Source On Resistance (T J = 25 C) R DS(on) 7.4 mω Drain-to-Source On Resistance (T J = 150 C) 18.5 mω Gate Threshold Voltage V GS(th) 1.6 V Drain to Source Leakage Current (T J = 25 C) I DSS 0.5 µa Drain to Source Leakage Current (T J = 150 C) 100 µa V GS = 0V I D = 1mA V GS = 6V, T J = 25 C I D = 25A V GS = 6V, T J = 150 C I D =25A V DS = V GS I D = 2mA V DS = 100V V GS = 0V, T J = 25 C V DS = 100V V GS = 0V, T J = 150 C Gate to Source Current I GS 200 µa V GS=6V, V DS=0V Gate Resistance R G 1.5 Ω f=1mhz, open drain Input Capacitance C ISS 610 Output Capacitance C OSS 250 pf Reverse Transfer Capacitance C RSS 15 Effective Output Capacitance, Energy Related (Note 4) C O(ER) 293 pf Effective Output Capacitance, Time Related (Note 5) C O(TR) 360 pf Total Gate Charge Q G(TOT) 12 nc Gate-to-Source Charge Q GS 2 nc Gate-to -Drain Charge Q GD 2.2 nc Reverse Recovery Charge Q RR 0 nc V DS = 80V V GS = 0V f = 1MHz V GS =0V V DS=0 to 80V I D =constant V GS =0V V DS=0 to 80V V GS=0 to 6V V DS=50V I D=27A Output Charge Q OSS 21 nc Gate plateau voltage V plat 3.0 V V DS = 80V Source-Drain Reverse Voltage V SD 0.15 V V GS = 6V, T J = 25 C I SD =9A Source-Drain Reverse Voltage V SD 2.0 V V GS = 0V, T J = 25 C I SD =9A (3) All parameters are specified with the substrate and thermal pad connected to the source (4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS (5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS Preliminary Rev GaN Systems Inc. 3

4 Figure 1: GS61008T typical IDS vs. TJ = 25 ⁰C Figure 2: GS61008T typical IDS vs. TJ = 150 ⁰C Figure 3: GS61008T typical RDS(on) vs. ID for VGS = C Figure 4: GS61008T typical RDS(on) vs. ID for VGS = C Preliminary Rev GaN Systems Inc. 4

5 Figure 5 : GS61008T typical transfer characteristic ID vs. VGS Figure 6: GS61008T Reverse Conduction Characteristics Figure 7 : GS61008T typical input, output and reverse capacitance vs. VDS Figure 8: GS61008T typical gate charge, QG, vs. VDS=50V Preliminary Rev GaN Systems Inc. 5

6 Figure 9 : GS61008T Safe operating Tcase= 25 C Figure 10: GS61008T Temperature de-rating curve Figure 11: GS61008T Typical COSS stored Energy Preliminary Rev GaN Systems Inc. 6

7 Preliminary Rev GaN Systems Inc. 7

8 Package Dimensions Recommended Minimum Footprint North America Europe Asia Important Notice Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply GaN Systems Inc. All rights reserved. Preliminary Rev GaN Systems Inc. 8