EPC2014 Enhancement Mode Power Transistor

Size: px
Start display at page:

Download "EPC2014 Enhancement Mode Power Transistor"

Transcription

1 EPC4 EPC4 Enhancement Mode Power Transistor V DSS, V R DS(ON), 6 mw I D, A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last years. GaN s exceptionally high electron mobility and low temperature coefficient allows very low R DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low Q G and zero Q RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings V DS Drain-to-Source Voltage V Continuous (T A = C, θ JA = ) I D Pulsed ( C, t pulse = µs) Gate-to-Source Voltage 6 V GS Negative Gate-to-Source Voltage - T J Operating Temperature - to T STG Storage Temperature - to A V C EPC4 egan FETs are supplied only in passivated die form with solder bumps Applications High Speed DC-DC conversion Class D Audio Hard Switched and High Frequency Circuits Benefits Ultra High Efficiency Ultra Low R DS(on) Ultra low Q G Ultra small footprint PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T J = C unless otherwise stated) BV DSS Drain-to-Source Voltage V GS = V, I D = µa V I DSS Drain Source Leakage V DS = 3 V, V GS = V µa Gate-Source Forward Leakage V GS = V.4 I GSS Gate-Source Reverse Leakage V GS = - V.. ma V GS(TH) Gate Threshold Voltage V DS = V GS, I D = ma.7.4. V R DS(ON) Drain-Source On Resistance V GS = V, I D = A 6 mω Source-Drain Characteristics (T J = C unless otherwise stated) V SD I S =. A, V GS = V, T = C.3 Source-Drain Forward Voltage I S =. A, V GS = V, T = C.4 All measurements were done with substrate shorted to source. V Thermal Characteristics TYP R θjc Thermal Resistance, Junction to Case 6. C/W R θjb Thermal Resistance, Junction to Board 3 C/W R θja Thermal Resistance, Junction to Ambient (Note ) 8 C/W Note : R θja is determined with the device mounted on one square inch of copper pad, single layer oz copper on FR4 board. See for details. EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE

2 EPC4 Dynamic Characteristics (T J = C unless otherwise stated) C ISS All measurements were done with substrate shorted to source. Input Capacitance 3 C OSS Output Capacitance V DS = V, V GS = V 7 pf C RSS Reverse Transfer Capacitance.. Q G Total Gate Charge V DS = V, V GS = V, I D = A.48.8 Q GD Gate to Drain Charge.48.6 Q GS Gate to Source Charge V DS = V, I D = A.67.8 nc Q OSS Output Charge Q RR Source-Drain Recovery Charge C Capacitance (nf) Figure : Capacitance C OSS = C GD + C SD C ISS = C GD + C GS C RSS = C GD VGS Gate to Source Voltage (V) 4 3 Figure 6: Gate Charge I D = A V D = V 3 V DS Drain to Source Voltage (V)... Q G Gate Charge (nc) ID Drain Current (A) 3 Figure : Typical Output Characteristics V GS = V GS = 4 V GS = 3 V GS = ID Drain Current (A) 3 Figure : Transfer Characteristics C C V DS = 3 V V DS Drain to Source Voltage (V) EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE

3 EPC4 RDS(ON) Drain to Source Resistance (mω) Figure 3: R DS(ON) vs. V GS for Various Drain Current I D = 4 A I D = 6 A I D = A I D = A RDS(ON) Drain to Source Resistance (mω) 7 6 Figure 4: R DS(ON) vs. V GS for Various Temperatures C C ISD Source to Drain Current (A) Figure 7: Reverse Drain-Source Characteristics C C V GS = V Normalized On-State Resistance RDS(ON) Figure 8: Normalized On Resistance vs. Temperature I D = A V GS = V V SD Source to Drain Voltage (V) T Junction Temperature ( C ) J.6 Figure 9: Normalized Threshold Voltage vs. Temperature.3 Figure : Gate Current.4. C C Normalized Threshold Voltage I D = ma IG Gate Current (A) T J Junction Temperature ( C ) V GS Gate-to-Source Voltage (V) All measurements were done with substrate shortened to source. EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 3

4 EPC4 Figure : Transient Thermal Response Curve ZθJB, Normalized Thermal Impedance Duty Factors: Normalized Maximum Transient Thermal Impedance P DM t.. Single Pulse Notes: Duty Factor: D = t /t Peak T J = P DM x Z θjb x R θjb + T B t t p, Rectangular Pulse Duration, seconds TAPE AND REEL CONFIGURATION 4mm pitch, 8mm wide tape on 7 reel b d e f g Loaded Tape Feed Direction 7 reel a c Die orientation dot Gate solder bar is under this corner EPC4 (note ) Dimension (mm) target min max a b c (see note) d e f (see note)..9. g...6 Die is placed into pocket solder bar side down (face side down) Note : MSL (moisture sensitivity level ) classified according to IPC/JEDEC industry standard. Note : Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 4 Die orientation dot Gate Pad bump is under this corner YYYY ZZZZ Part Number Part # Marking Line Laser Markings Lot_Date Code Marking line Lot_Date Code Marking Line 3 EPC4 4 YYYY ZZZZ EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 4

5 EPC4 DIE OUTLINE Solder Bar View c d X f A f X3 3 4 B DIM micrometers MIN Nominal MAX A B c d e 3 6 f 9 g Side View e g g X +/- (68) 8 Max SEATING PLANE RECOMMENDED LAND PATTERN (measurements in µm) The land pattern is solder mask defined Solder mask is um smaller per side than bump X Pad no. is Gate Pad no. is Substrate Pad no. 3 and are Drain Pad no. 4 is Source 8 8 X3 Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Information subject to change without notice. revised September EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE

EPC2007C Enhancement Mode Power Transistor

EPC2007C Enhancement Mode Power Transistor EPC7C EPC7C Enhancement Mode Power Transistor V DSS, V R DS(on), 3 mw I D, 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment

More information

EPC2015 Enhancement Mode Power Transistor

EPC2015 Enhancement Mode Power Transistor EPC5 EPC5 Enhancement Mode Power Transistor V DSS, 4 V R DS(ON), 4 mw I D, A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment

More information

EPC2016C Enhancement Mode Power Transistor

EPC2016C Enhancement Mode Power Transistor EPC6C EPC6C Enhancement Mode Power Transistor V DSS, V R DS(on), 6 mω I D, 8 A G D S EFFICIENT POWER CONVERSION HAL Gallium Nitride s exceptionally high electron mobility and low temperature coefficient

More information

EPC8004 Enhancement Mode Power Transistor

EPC8004 Enhancement Mode Power Transistor Enhancement Mode Power Transistor, V R DS(on), mω, A G D S EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure

More information

EPC2107 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap

EPC2107 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap EPC7 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap V DSS, V R DS(on), 9 m I D,.7 A EFFICIENT POWER CONVERSION HAL EPC7 Gallium Nitride is grown on Silicon Wafers

More information

UNISONIC TECHNOLOGIES CO., LTD UT4411

UNISONIC TECHNOLOGIES CO., LTD UT4411 UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

AO3408 N-Channel Enhancement Mode Field Effect Transistor

AO3408 N-Channel Enhancement Mode Field Effect Transistor August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages

More information

AO3401 P-Channel Enhancement Mode Field Effect Transistor

AO3401 P-Channel Enhancement Mode Field Effect Transistor July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages

More information

Dual N-channel Enhancement-mode Power MOSFETs

Dual N-channel Enhancement-mode Power MOSFETs Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description

More information

UNISONIC TECHNOLOGIES CO., LTD UT4413

UNISONIC TECHNOLOGIES CO., LTD UT4413 UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable

More information

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

N-Channel Power MOSFET 40V, 121A, 3.3mΩ TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature

More information

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description

FDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,

More information

N-Channel Power MOSFET 100V, 46A, 16mΩ

N-Channel Power MOSFET 100V, 46A, 16mΩ TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET

ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET A Product Line of Diodes Incorporated ZXMCA86N8 0V SO8 Complementary Dual enhancement mode MOSFET Summary Device V (BR)DSS (V) Q G (nc) R DS(on) (Ω) (A) T A = 25 C Q 0 9.2 0.230 @ = V 2. 0.300 @ =.9 Q2-0

More information

ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXMHC3A01N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC3A0N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 30V 3.9nC 25m @ = 0V 2.7A 80m @ = 4. 2.2A

More information

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

N-Channel Power MOSFET 150V, 1.4A, 480mΩ TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE

More information

ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC0A07N8 00V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) I D T A = 25 C N-CH 00V 2.9nC 0.70Ω @ = 0V.0A 0.90Ω @ = 6.0V

More information

D1/D2 S1 G1 S2 G2 TO-252-4L

D1/D2 S1 G1 S2 G2 TO-252-4L Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L

More information

N- and P-Channel 60V (D-S) Power MOSFET

N- and P-Channel 60V (D-S) Power MOSFET TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

AOL1422 N-Channel Enhancement Mode Field Effect Transistor

AOL1422 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation

More information

UNISONIC TECHNOLOGIES CO., LTD UT6401

UNISONIC TECHNOLOGIES CO., LTD UT6401 UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed,

More information

Features. U-DFN (Type F) Pin Out Bottom View

Features. U-DFN (Type F) Pin Out Bottom View YM 3V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BV DSS 3V R DS(ON) Max 9mΩ @ 25mΩ @ V GS = 2.5V 4mΩ @ V GS =.8V 2mΩ @ V GS =.5V I D Max T C = +25 C 5A 4A A 6A.6mm Profile Ideal for Low

More information

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

N-Channel Power MOSFET 30V, 78A, 3.8mΩ TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and

More information

Top View. Part Number Case Packaging DMTH4014LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel

Top View. Part Number Case Packaging DMTH4014LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel 4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed

More information

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω

FDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely

More information

G1 S2. Top View. Part Number Case Packaging DMTH6010LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel

G1 S2. Top View. Part Number Case Packaging DMTH6010LPDQ-13 PowerDI (Type C) 2,500/Tape & Reel 6V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max I D max T C = +25 C mω @ V GS = V 47.6A 6mΩ @ V GS = 4.5V 39.5A Description and Applications This MOSFET is designed

More information

PNMT45V2 2.5V Drive N-Channel MOSFET

PNMT45V2 2.5V Drive N-Channel MOSFET PNMT45V2 2.5V Drive N-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (mω) I D (A) 1@ V GS =1V 45

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

PPMT12V4 P-Channel MOSFET

PPMT12V4 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 0.045 @ V GS =-4.5V -4.3 G() S(2)

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range AP5GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free Description D D D D SO- G S S

More information

N-Channel Power MOSFET 150V, 9A, 65mΩ

N-Channel Power MOSFET 150V, 9A, 65mΩ TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z

UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z UNISONIC TECHNOLOGIES CO., LTD UTT6NZ 6A, V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6NZ is a N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum

More information

AOD436 N-Channel Enhancement Mode Field Effect Transistor

AOD436 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is

More information

Green. Features G S. Pin Out Top View. Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel

Green. Features G S. Pin Out Top View. Part Number Case Packaging DMNH6021SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet

More information

Features. Bottom View. Top View Bottom View

Features. Bottom View. Top View Bottom View YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A

More information

P2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter

P2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free Description PG ND/PD PS/PS PG SO-8 NG

More information

P-Channel Power MOSFET -40V, -22A, 15mΩ

P-Channel Power MOSFET -40V, -22A, 15mΩ TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

SSF6014D 60V N-Channel MOSFET

SSF6014D 60V N-Channel MOSFET Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology

More information

Second Generation egan FETs are Lead Free and Offer Improved Performance Alex Lidow, CEO, Efficient Power Conversion Corporation

Second Generation egan FETs are Lead Free and Offer Improved Performance Alex Lidow, CEO, Efficient Power Conversion Corporation Second Generation egan FETs are Lead Free and Offer Improved Performance Alex Lidow, CEO, Efficient Power Conversion Corporation EFFICIENT POWER CONVERSION Since March, 11 Efficient Power Conversion Corporation

More information

FDZ2554P. FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench BGA MOSFET

FDZ2554P. FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified Power PowerTrench BGA MOSFET FDZ24P June 07 Monolithic Common Drain P-Channel 2.V Specified Power Trench BGA MOSFET -V, -6.A, 28mΩ Features Max r DS(on) = 28mΩ at V GS = -4.V, I D = -6.A Max r DS(on) = 4mΩ at V GS = -2.V, I D = -A

More information

PPMT20V4E P-Channel MOSFET

PPMT20V4E P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -20 0.037 @ V GS =-4.5V -4 G() S(2)

More information

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive

More information

PNMT50V02E N-Channel MOSFET

PNMT50V02E N-Channel MOSFET N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) 5 @V GS =V.22 D (3)

More information

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers

More information

P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D

P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low

More information

WPM2005 Power MOSFET and Schottky Diode

WPM2005 Power MOSFET and Schottky Diode WPM5 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky Applications Li--Ion Battery Charging

More information

N-Channel Power MOSFET 60V, 70A, 12mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU

More information

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A

More information

PPMT30V3 P-Channel MOSFET

PPMT30V3 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A).58 @ V GS =-1V -3.75@ V GS =-4.5V -3

More information

WPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30

WPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30 WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field

More information

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench

More information

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ

FDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or

More information

TSM V N-Channel MOSFET

TSM V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell

More information

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.

More information

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge A Product Line of Diodes Incorporated ZXMHC3F38N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V (BR)DSS Q G R DS(on) T A = 25 C N-CH 30V 9.0nC 33mΩ @ = 0V 5.0A 60mΩ @ = 4.5V 3.9A

More information

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L

Applications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 3V R DS(ON) Max I D Max T A = +5 C 3mΩ @ V GS = V 6.A 4mΩ @ V GS = 4.5V 5.A Description and Applications This MOSFET is designed to minimize

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such

More information

AOD405 P-Channel Enhancement Mode Field Effect Transistor

AOD405 P-Channel Enhancement Mode Field Effect Transistor Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology

More information

PDPM6UT20V1E P-Channel MOSFET

PDPM6UT20V1E P-Channel MOSFET PChannel MOSFET Description The MOSFET provide the best combination of fast switching, low onresistance and costeffectiveness. SOT363 MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (ma) S2 6 D2.45@ =4.5V

More information

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 18A, 0.19Ω N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance

More information

Green. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel

Green. Part Number Case Packaging DMN3013LFG-7 PowerDI (Type D) 1000 / Tape & Reel DMN3013LFG-13 PowerDI (Type D) 3000 / Tape & Reel YYWW Green 3V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type D) Product Summary Device BV DSS R DS(ON) Max Q 3V 4.3m @ V GS = 8V, I D = 4A Q2 3V 4.3m @ V GS = 8V, I D = 4A Description

More information

UNISONIC TECHNOLOGIES CO., LTD UT4422

UNISONIC TECHNOLOGIES CO., LTD UT4422 UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

V DSS R DS(on) max (mω)

V DSS R DS(on) max (mω) PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (

More information

Taiwan Goodark Technology Co.,Ltd TGD0103M

Taiwan Goodark Technology Co.,Ltd TGD0103M TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

N-Channel Power MOSFET 40V, 3.9A, 45mΩ N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance

More information

Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V

Bottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination

More information

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

I D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel

I D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description

More information

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell

More information

TSM V P-Channel MOSFET

TSM V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process

More information

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET

FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely

More information

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free. Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected

More information

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (

More information

FDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ

FDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ FDMJC Dual N & P-Channel PowerTrench MOSFET N-Channel: V,.A, 9mΩ P-Channel: -V, -.5A, mω Features : N-Channel Max r DS(on) = 9mΩ at V GS =.5V, I D =.A Max r DS(on) = mω at V GS =.5V, I D =.5A : P-Channel

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

AOE V Dual Asymmetric N-Channel AlphaMOS

AOE V Dual Asymmetric N-Channel AlphaMOS AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V

More information

PJM8205DNSG Dual N Enhancement Field Effect Transistor

PJM8205DNSG Dual N Enhancement Field Effect Transistor DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

More information

AOP608 Complementary Enhancement Mode Field Effect Transistor

AOP608 Complementary Enhancement Mode Field Effect Transistor AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may

More information

PDNM6ET20V05 Dual N-Channel, Digital FET

PDNM6ET20V05 Dual N-Channel, Digital FET PDNM6ET2V5 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a

More information

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and

More information

UNISONIC TECHNOLOGIES CO., LTD UTD408

UNISONIC TECHNOLOGIES CO., LTD UTD408 UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast

More information