EPC2014 Enhancement Mode Power Transistor
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1 EPC4 EPC4 Enhancement Mode Power Transistor V DSS, V R DS(ON), 6 mw I D, A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last years. GaN s exceptionally high electron mobility and low temperature coefficient allows very low R DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low Q G and zero Q RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings V DS Drain-to-Source Voltage V Continuous (T A = C, θ JA = ) I D Pulsed ( C, t pulse = µs) Gate-to-Source Voltage 6 V GS Negative Gate-to-Source Voltage - T J Operating Temperature - to T STG Storage Temperature - to A V C EPC4 egan FETs are supplied only in passivated die form with solder bumps Applications High Speed DC-DC conversion Class D Audio Hard Switched and High Frequency Circuits Benefits Ultra High Efficiency Ultra Low R DS(on) Ultra low Q G Ultra small footprint PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T J = C unless otherwise stated) BV DSS Drain-to-Source Voltage V GS = V, I D = µa V I DSS Drain Source Leakage V DS = 3 V, V GS = V µa Gate-Source Forward Leakage V GS = V.4 I GSS Gate-Source Reverse Leakage V GS = - V.. ma V GS(TH) Gate Threshold Voltage V DS = V GS, I D = ma.7.4. V R DS(ON) Drain-Source On Resistance V GS = V, I D = A 6 mω Source-Drain Characteristics (T J = C unless otherwise stated) V SD I S =. A, V GS = V, T = C.3 Source-Drain Forward Voltage I S =. A, V GS = V, T = C.4 All measurements were done with substrate shorted to source. V Thermal Characteristics TYP R θjc Thermal Resistance, Junction to Case 6. C/W R θjb Thermal Resistance, Junction to Board 3 C/W R θja Thermal Resistance, Junction to Ambient (Note ) 8 C/W Note : R θja is determined with the device mounted on one square inch of copper pad, single layer oz copper on FR4 board. See for details. EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
2 EPC4 Dynamic Characteristics (T J = C unless otherwise stated) C ISS All measurements were done with substrate shorted to source. Input Capacitance 3 C OSS Output Capacitance V DS = V, V GS = V 7 pf C RSS Reverse Transfer Capacitance.. Q G Total Gate Charge V DS = V, V GS = V, I D = A.48.8 Q GD Gate to Drain Charge.48.6 Q GS Gate to Source Charge V DS = V, I D = A.67.8 nc Q OSS Output Charge Q RR Source-Drain Recovery Charge C Capacitance (nf) Figure : Capacitance C OSS = C GD + C SD C ISS = C GD + C GS C RSS = C GD VGS Gate to Source Voltage (V) 4 3 Figure 6: Gate Charge I D = A V D = V 3 V DS Drain to Source Voltage (V)... Q G Gate Charge (nc) ID Drain Current (A) 3 Figure : Typical Output Characteristics V GS = V GS = 4 V GS = 3 V GS = ID Drain Current (A) 3 Figure : Transfer Characteristics C C V DS = 3 V V DS Drain to Source Voltage (V) EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
3 EPC4 RDS(ON) Drain to Source Resistance (mω) Figure 3: R DS(ON) vs. V GS for Various Drain Current I D = 4 A I D = 6 A I D = A I D = A RDS(ON) Drain to Source Resistance (mω) 7 6 Figure 4: R DS(ON) vs. V GS for Various Temperatures C C ISD Source to Drain Current (A) Figure 7: Reverse Drain-Source Characteristics C C V GS = V Normalized On-State Resistance RDS(ON) Figure 8: Normalized On Resistance vs. Temperature I D = A V GS = V V SD Source to Drain Voltage (V) T Junction Temperature ( C ) J.6 Figure 9: Normalized Threshold Voltage vs. Temperature.3 Figure : Gate Current.4. C C Normalized Threshold Voltage I D = ma IG Gate Current (A) T J Junction Temperature ( C ) V GS Gate-to-Source Voltage (V) All measurements were done with substrate shortened to source. EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 3
4 EPC4 Figure : Transient Thermal Response Curve ZθJB, Normalized Thermal Impedance Duty Factors: Normalized Maximum Transient Thermal Impedance P DM t.. Single Pulse Notes: Duty Factor: D = t /t Peak T J = P DM x Z θjb x R θjb + T B t t p, Rectangular Pulse Duration, seconds TAPE AND REEL CONFIGURATION 4mm pitch, 8mm wide tape on 7 reel b d e f g Loaded Tape Feed Direction 7 reel a c Die orientation dot Gate solder bar is under this corner EPC4 (note ) Dimension (mm) target min max a b c (see note) d e f (see note)..9. g...6 Die is placed into pocket solder bar side down (face side down) Note : MSL (moisture sensitivity level ) classified according to IPC/JEDEC industry standard. Note : Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 4 Die orientation dot Gate Pad bump is under this corner YYYY ZZZZ Part Number Part # Marking Line Laser Markings Lot_Date Code Marking line Lot_Date Code Marking Line 3 EPC4 4 YYYY ZZZZ EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 4
5 EPC4 DIE OUTLINE Solder Bar View c d X f A f X3 3 4 B DIM micrometers MIN Nominal MAX A B c d e 3 6 f 9 g Side View e g g X +/- (68) 8 Max SEATING PLANE RECOMMENDED LAND PATTERN (measurements in µm) The land pattern is solder mask defined Solder mask is um smaller per side than bump X Pad no. is Gate Pad no. is Substrate Pad no. 3 and are Drain Pad no. 4 is Source 8 8 X3 Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Information subject to change without notice. revised September EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
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General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 40V, 3.9A, 45mΩ
N-Channel Power MOSFET 40V, 3.9A, 45mΩ FEATURES Advance Trench Process Technology High density cell design for Ultra Low On-resistance Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance
More informationBottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationI D T A = 25 C -2.8A -2.3A. Part Number Case Packaging DMG6602SVT-7 TSOT / Tape & Reel
DMGSVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V (BR)DSS R DS(on) Q 3V Q -3V I D mω @ V GS = V 3.A mω @ V GS =.5V.7A 95mΩ @ V GS = -V mω @ V GS = -.5V Description
More informationNot Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationFDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationFDMJ1032C. Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ
FDMJC Dual N & P-Channel PowerTrench MOSFET N-Channel: V,.A, 9mΩ P-Channel: -V, -.5A, mω Features : N-Channel Max r DS(on) = 9mΩ at V GS =.5V, I D =.A Max r DS(on) = mω at V GS =.5V, I D =.5A : P-Channel
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationAOE V Dual Asymmetric N-Channel AlphaMOS
AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationPDNM6ET20V05 Dual N-Channel, Digital FET
PDNM6ET2V5 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V DS (V) R DS(on) (Ω) I D
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More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
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