GS66504B 650V enhancement mode GaN transistor Preliminary Datasheet

Transcription

1 Features 650V enhancement mode power switch Ultra low FOM Island Technology die Low inductance GaNPX package Reverse current capability Zero reverse recovery loss RoHS 6 compliant Applications On-board battery chargers Appliance and motor inverters and IPMs AC-DC power supplies (PFC & primary) VHF small form factor power adapters High frequency, high efficiency power conversion top view not to scale circuit symbol Absolute Maximum Ratings (T case = 25 C except as noted) Parameters Symbol Value Units Operating Junction Temperature T J -55 to +150 C Storage Temperature Range T S -55 to +150 C Drain-to-Source Voltage V DS 650 V Gate-to-Source Voltage V GS -10 to + 7 V Gate-to-Source Voltage - transient V GS ±10 V Continuous Drain Current (T case=25 C) I DS(cont) 15 A Continuous Drain Current (T case=100 C) I DS(cont) 11 A Pulsed Drain Current (T case=25 C) I D pulse 30 A Thermal Characteristics (Typical values unless otherwise noted) Parameters Symbol Value Units Thermal Resistance (junction to case) R ΘJC 1 C /W Maximum Soldering Temperature (MSL3 rated) T SOLD 260 C Rev GaN Systems Inc. 1

2 Ordering Information Part number Package type Ordering code Packing method GS66504B GaNPX GS66504B-TR Tape-and-reel GS66504B GaNPX GS66504B-MR Mini-reel Rev GaN Systems Inc. 2

3 Electrical Characteristics (Typical values at T CASE= 25 C unless otherwise noted) Parameters Symbol Typ. Units Conditions Drain-to-Source Breakdown Voltage (Min.) BV DSS 650 V V GS =0V Drain-to-Source On Resistance (T J =25 C) R DS(ON) 110 mω V GS =6V, T J=25 C Drain-to-Source On Resistance (T J=150 C) 280 mω V GS =6V, T J=150 C Gate Threshold Voltage V GS(th) 1.6 V V DS =V GS Drain to Source Leakage Current (T J=25 C) I DSS 1.0 µa Drain to Source Leakage Current (T J=150 C) 200 µa V DS=650V V GS =0V, T J=25 C V DS=650V V GS =0 V, T J=150 C Gate to Source Current I GS 20 µa V GS=6V, V DS=0V Gate Resistance R G 1.5 Ω f=1mhz, open drain Gate Plateau Voltage V plat 3.0 V V DS=400V Source-Drain Reverse Voltage V SD 2.0 V Source-Drain Reverse Voltage V SD 0.15 V Input Capacitance C ISS 130 Output Capacitance C OSS 32 Reverse Transfer Capacitance C RSS 1.0 Effective Output Capacitance, Energy Related C O(ER) 44 pf Effective Output Capacitance, Time Related C O(TR) 72 pf Total Gate Charge Q G(TOT) 3.0 nc pf V GS=0V, T J =25 C, I SD = 700 ma V GS=6V, T J =25 C, I SD = 700 ma V DS=400V V GS=0V f=1mhz V GS =0V V DS=0 to 400V I D =constant V GS =0V V DS=0 to 400V Gate-to-Source Charge Q GS 1.0 nc Gate-to-Drain Charge Q GD 1.0 nc Reverse Recovery Charge Q RR 0 nc V GS=0 to 6V V DS=400V Output Charge Q OSS 28 nc Rev GaN Systems Inc. 3

4 Figure 1: GS66504B typical IDS vs. TJ = 25 ⁰C Figure 2: GS66504B typical IDS vs. TJ = 150 ⁰C Figure 3: GS66504B typical RDS(on) vs. ID for VGS = 6 C Figure 4: GS66504B typical RDS(on) vs. ID for VGS = C Rev GaN Systems Inc. 4

5 Figure 5: GS66504B typical transfer characteristic ID vs. VGS Figure 6: GS66504B typical gate charge, QG, vs. VDS = 100, 400V Figure 7: GS66504B typical input, output and reverse capacitance vs. VDS Figure 8: GS66504B Typical COSS Stored Energy Rev GaN Systems Inc. 5

6 Figure 9: GS66504B Reverse Conduction Characteristics Figure 10 : GS66504B Safe Operating Tcase 25 ⁰C Figure 11 : GS66504B temperature derating Figure 12 : GS66504B Transient Thermal Impedance Rev GaN Systems Inc. 6

7 Package Dimensions GS66504B Recommended Minimum Footprint GS66504B The GS66502B and the GS66504B are footprint compatible. The drain pad on the GS66504B is larger than the GS66502B however, if the recommended footprint for the GS66504B (above) is used, no change will be required on the printed circuit board to use the GS66502B or the GS66504B. Please visit for information on the GS66502B. Rev GaN Systems Inc. 7

8 North America Europe Asia Important Notice Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply GaN Systems Inc. All rights reserved. Rev GaN Systems Inc. 8