New and running EEE-parts projects of the German Aerospace Center. Dr.-Ing. Andreas K. Jain, Juergen Tetzlaff, MEWS23, Tsukuba, November 11, 2010

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1 New and running EEE-parts projects of the German Aerospace Center Dr.-Ing. Andreas K. Jain, Juergen Tetzlaff, MEWS23, Tsukuba, November 11, 2010

2 German Aerospace Center (DLR) Aeronautics Space Transportation Energy Research Institution Space Agency Project Management Agency 6,500 employees across 29 research institutes and facilities at 13 sites. Total budget: 2114 Mio 2

3 DLR Space Research Area Space exploration Zero gravity research Earth observation Communication and navigation Space transport Technology of space systems 3

4 DLR s Tasks as the National Space Agency Defining German space planning on behalf of the federal government Representing German spacerelated interests in the international arena, in particular in ESA Tendering, award, and support of space projects in the context of the National Space Program 4

5 Tasks within the DLR EEE-part department on behalf of the space agency: Determination and prioritization of the national EEE-parts demand National technology development and qualification program Launching EEE-part qualifications EEE-part availability Performing qualification and re- qualification audits with manufacturers Establishing strategies to increase the availability of EEE-parts in the frame of the European programs (ECI, ESCC, FP7) Representation of the German Space Agency, German manufacturers and users within the European Space Components Coordination (ESCC) Annual user platforms (bi-annual with manufactures) to discuss: EEE-part availability (and application of the EPPL) Qualification procedures Export restrictions Technology developments Harmonizing the national technology development and qualification program 5

6 DLR EEE Parts Projects Activity Term Status Qualification of Quartzes and Oscillators in process Qualification of Microwave Connectors in process Certification of an Assembly and Test House in process Qualification of MMIC Local Oscillator in process Development and Qualification of PowerMOSFETs in process Qualification of Diodes and RF-Transistors in process Evaluation of the UMS PPH15x Process in process Development of a GaN 1000V Switching Transistor in process Capability Approval of L-Foundry in preparation Qualification of RF-Circulators / Isolators planned Feasibility Study of the SiC Diodes Technology NN planned All projects under: 6

7 Qualification of Quartzes and Oscillators Within the scope of this project, KVG Quartz Crystal Technology performs a qualification of quartzes and oscillators. Quartzes from 2,5-140 MHz in TO-5 or TO-7 package and oscillators in hybrid technology (SMD and DIL), XO (8-125 MHz), and VCXO (10-90 MHz). The qualification tests have started. Info: Qualification of Microwave Connectors Quartz, SMD-, and DIL-Oscillator In the context of this project, Rosenberger Company performs a family qualification of microwave connectors. For TNC, SMA, SMA 2.92, and SMP connectors the qualification tests are running. Info: 7

8 Certification of an Assembly and Test House In fact, many semiconductor manufacturers are able to deliver suitable chips but have no intention or no chance to perform the complex chip assembly in space suitable housings and the required extensive tests for qualification and screening. The ATH shall take over these actions and act as sales organization for these components. Evaluation will start soon. Info: Qualification of MMIC Local Oscillator For broad band satellite communication, modern MMIC-LOs are needed. Therefore, a Capability Domain Approval of the chip manufacturing and package process has started. First application is a MMIC-LO but further RF-applications are possible within this domain. Info: 8

9 Development and Qualification of PowerMOSFETs After the positive results of the various studies performed, the Infineon Power MOFSET process have been modified in such a way that the manufactured transistors are RadHard without a significant degradation of the electric properties. Prototypes will be available 1. Q Afterwards, a qualification will follow. Qualification of Diodes and RF-Transistors For automotive und wireless applications, Infineon provides high-quality diodes and microwave transistor chips. On request of German users they shall be packaged in suitable housings and an ESCC qualification of this parts will be performed. Info: -> discretes Diodes RF-Transistor, Micro-X Package 9

10 Evaluation of the UMS PPH15x Process In this program, a delta evaluation of the PPH15x MMIC process will be performed. PPH15x stands for Power PHEMT (Pseudomorphic High Electron Mobility Transistor), a GaAs based technology with 0,15 Micron gate length, the x for a power enhancement of the PPH15 process, which was already evaluated. Life time and reliability tests have been performed. Space evaluation has started. Info: 10

11 Development of a GaN 1000V Switching Transistor (1) Targets Normally-off GaN transistor technology for space borne power conditioning Requirements low on-state resistance high breakdown voltage up to 1000V) Threshold voltage Vth > +1 V Large gate swing > 3 V Low leakage currents Reproducible process Radiation hardness Reliability 11

12 Development of a GaN 1000V Switching Transistor (2) Device fabrication 12

13 Development of a GaN 1000V Switching Transistor (3) Actual Results Stable 3 GaN process Positive threshold voltage (+1.2 V) Large gate voltage swing (5 V) High IDS-max (0.5 A/mm) good trade-off to normally-on devices) Low leakage: off-state drain leakage 10 VGS = 0 V on-state gate leakage 10 VGS = +5 V Good saturation properties Transistor-channel conductive if operated in reverse direction 3rd quadrant operation May be used for self protection when switching inductive loads Safe transistor operation up to 200 C ambient IDS decreases with T _ CT = -1.3 ma/(mm K) RON increases with T _ CT = 43 mwmm/k Vth constant with T _ CT = mv/k 50 A device flip-chip mounted in TO 220 package No thermal run-away situation in p-gan gate power-transistors 13

14 Capability Approval of L-Foundry For space applications less and less semiconductor foundries are available. Recently the widely used MG2RTP CMOS process from Atmel was obsolete too. In preliminary investigations L-Foundry (Landshut) was determined as suitable foundry. Meanwhile L-Foundry has bought Atmel Rousset (F) too. By means of suitable test circuits the required radiation hardness will to be ascertained in a first step. In case of an positive result an ESCC Capability Approval will be carried out. Info: 14

15 Qualification of RF-Circulators / Isolators There are only two suppliers in Europe (Chelton, F and Trak, GB), who can deliver RF-Circulators / Isolators with required properties. But they are not qualified. On the other side Tesat fabricates excellent RF-Circulators / Isolators for their own use. Therefore German users asked for the ESCC qualification Info: 15

16 Feasibility Study of the SiC Diodes Technology (1) Why Siliconcarbide? Space applications need robust and heat resistant components. Silicon power semi conductors are more and more reaching their physical limits (higher junction temperature, higher loss), which can lead to the damage of the parts. SiC offers excellent material properties and allows components with outstanding electrical characteristics and high junction temperatures. A feasibility study shall examine the use for Space application. 16

17 Feasibility Study of the SiC Diodes Technology (2) Comparison Si SiC Characteristics Si SiC Band Gap (ev) Electron Mobility (cm²/vs) Disruptive Field Strength (kv/cm) 250 >2000 Thermal Conductivity (W/cmK) 1,5 4.9 Advantages Drawbacks Less Defects Higher Yield Lower Price High Switching Loss at High Temperature At Performance Limit High Temperature Strength High Ampacity Chemical Resistance Radiation Hardness Material Hardness High Increase of Crystal Defects Processes difficult to control Costly Bulk Material 17