IMS2013 / UMS. Update on latest MMIC product development. Viaud JP : June 5 th, 2013

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1 IMS2013 / UMS Update on latest MMIC product development Viaud JP : June 5 th, 2013 Ref : Product BU date : June 2013

2 Outline United Monolithic Semiconductor at a glance Technology portfolio & targeted applications Power amplifier Latest product release and roadmap E band chipset Ongoing developments Conclusion Ref : Product BU date : June

3 UMS at a glance Founded in 1996 by gathering & MMIC activities HQ, Sales, design center, back-end production in France (Villebon) GaAs & GaN front-end wafer production in Germany (Ulm) Design center & Sales office in US (Lowell) Offering MMIC, packaged MMIC solutions and foundry services Off the Shelf products Bare die & packaged products Know Good Dies or packages Proven solutions up to 100 GHz Foundry Services MPW service Space qualified technologies Accurate models (PDK) Turnkey Solutions Development of ASICs MCM solutions (integration) Test & Qualification services ISO 9001, & TS16949 certified Ref : Product BU date : June

4 Technology portfolio and targeted functions / applications 1GHz 2GHz 5GHz 10GHz 20GHz 50GHz 100GHz PPH25 Power phemt (0.25µm) PPH25X High Power phemt (0.25µm) PPH15 Power phemt (0.15µm) DRV / PS / ATT DRV / HPA DRV / MPA Defense PPH15X-10(20) High Power phemt (linear) (0.15µm) DRV / MPA / HPA PH25 Low Noise phemt (0.25µm) PH15 Low Noise phemt (0.15µm) PH10 Very Low Noise phemt (0.1µm) HB20M VCO InGaP HBT HB20P(X) Power InGaP HBT HB20S High Power InGaP HBT HP07 MesFet (0.7µm) BES100 Schottky Diode Technology GH50 Very High Power (0.5µm) GH25 Very High Power (0.25µm) Converters Multi functions LNA Space & Auto VCO DRV / HPA DRV / ATT Multi functions Mixer DRV / HPA Space Automotive Telecom Ref : Product BU date : June

5 Power Amplifier : latest product release & roadmap A portfolio of Power Amplifiers for Defense, Space & telecom markets Huge experience in developing High Power Amplifiers (IP portfolio) In 2012, around 10 new products released for Power applications Strong push to develop and upgrade Power technologies GaN technologies are mature enough to release competitive products UMS has decided to expand HPA portfolio (GaAs & GaN) First GaN base products are being released Ref : Product BU date : June

6 Power Amplifier - Key features Design concerns Technology concerns Key parameter To be optimized vs applications Selection of the best technology vs design goal Efficiency Freq 1 to 80GHz To be optimzed vs system needs Trade-off with Linearity performances Linearity Gain control On chip power detector Trade-off between performances & cost Power Amplifier Cost SMD Package Reliability Robustness Trade-off between Performances & optimum processes QFN molded or Air cavity, ceramic package,.. No trade-off Lot acceptance tests (Assembly lot) Ref : Product BU date : June

7 UMS Power Amplifier portfolio Quick overview 100 W CHZ180 GaN 52dBm Ceramic In development 10 W CHZ015 GaN 42dBm QFN CHZ050 GaN 49dBm CHA F CHA F CHA F ASICs CHA F 42dBm CHA F 38 to41dbm 40dBm GaN QFN 44 dbm GaN Bare die Design freeze / production CHA6552-QMG 37dBm+ det QFN 37dBm GaN QFN 1 W CHA6250-QFG 34.5dBm QFN CHA F 32.5dBm CHA6252-QFG 34dBm QFN 34Bm + det GaAs / QFN CHA6355-BCA 33dBm QFN 31dBm + det GaAs / QFN CHA F 33.5dBm CHA F 32.5dBm 30dBm +det QFN 29dBm + det QFN CHA3080/90 20dBm+det GHz Ref : Product BU date : June

8 GaAs HPA portfolio Ref : Product BU date : June

9 MMIC / Latest realisation : 15W High Power Amplifier C Band High Power Amplifier Application Radar High Power Amplifier RF bandwidth: GHz Linear Gain: 23 db Return Losses: 12dB Output 3dBc: 12W Associated power added efficiency: 45% Consumption: 8V, 1.8A/5A Chip form: 23.6 mm² Pout (dbm) & PAE (% %) Pout PAE Gain Linear Gain (db) W HPA Freqency (GHz) Freq Ref : Product BU date : June

10 ES-CHA6552-QMG High Power Amplifier 6-9 GHz Application Point to Point Point to Multipoint High linearity HPA RF bandwidth: 6-9 GHz High Gain: 22 db Power at 1dB comp.: 35 dbm Output IP3: 43 dbm Consumption: 7 V / 1.8 A 28 lead QFN 6x6mm Specific features High Gain High linearity On chip Power detector ES Q2/13 CHA6250 CHA6252 ES-CHA Freq Ref : Product BU date : June

11 ES-CHA6552-QMG Ref : Product BU date : June

12 ES-CHA6552-QMG Ref : Product BU date : June

13 GaN MMIC / Ku Demonstrator : 25W High Power Amplifier Application Radar Point to point Test fixture Technology UMS 0.25um GaN (GH25) High Power Amplifier RF bandwidth: GHz Linear Gain: 11 db Output 3dBc: 25 W Associated power added efficiency: 35% Operating point : 25V/CW 30V /Pulsed Ref : Product BU date : June

14 GaN MMIC / Ku Demonstrator : 25W High Power Amplifier Ref : Product BU date : June

15 High power transistor offer Catalogue products Ref : Product BU date : June

16 General Purpose Transistors / Available products / samples Power (W) 500 In Evaluation 50 5 CHK080 CHK040 CHK025 CHK015 In Development CHK080A-SRA CHK040A-SOA CHK025A-S0A CHK015A-SMA Frequency (GHz) Develop Sampling Product Ref : Product BU date : June

17 Internally-Matched / Quasi MMIC products / Current Situation & Roadmap Power (W) W S-band 180W L-band CHZ100A 50 50W S-band CHZ050A Telecom HPA: C-X-Ku band 15W L-band Frequency (GHz) Evaluation Demonstrators Sampling Ref : Product BU date : June

18 CHZ180-SEA : L Band HPA / Coming soon Q4/2013 A fully matched L band device / 1 stage Developed on 0.5 um GaN process Optimized for CW & Pulse conditions ( Gain ~ 18 db) Output power (dbm) & Efficiency (%) 200 W 55 % T=25 C / Pulsed 25µs, 10% V=45V / IdQ=1.3 A T=25 C / Pulsed 25µs, 10% V=45V / IdQ=1.3 A Ref : Product BU date : June

19 CHZ015A : 15W L Band Driver / Coming soon Q4/2013 Input matched L band driver / 1 stage Developed on 0.5 um GaN process Standard molded QFN package 15W 40% Ref : Product BU date : June

20 E-band development Highlights UMS is developing a bare die E-band chipset for radio links The chipset is developed on a robust 0.1 um process (PH10) PH10 is being evaluated for space applications 2 MPA and 1 LNA/VGA have been released in 2012 A down converter is under development Sampling for Q3/Q Few packaging solutions are being assessed Ref : Product BU date : June

21 E-band Products Bare die version Function available and in development IF (I / Q) ES : Q x 2 CHA F RF Input : 71-86GHz CHX1162-QDG CHX1191-QDG IRM Down Converter LNA / VGA LO x n n = 2 or 3 CHA F CHA F CHA F 71-76GHz x 2 Up / Mixer VGA / Buffer HPA RF Output : GHz I / Q Product release Coming soon Under development Ref : Product BU date : June

22 CHA F LNA/ VGA E-Band Application E Band radio Millimeter wave Imaging Radars Specific features Very broadband Very low noise High gain dynamic Very low noise E-Band LNA RF bandwidth: GHz Linear Gain: 22 db Gain dynamic: 12 db Noise figure: 3.5 db Power at 1dB comp.: 12dBm Return Loss: > 10dB Consumption: 3.5V, 75mA CHA Freq Ref : Product BU date : June

23 CHA F LNA/ VGA E-Band Gain & Return Losses (db) Frequency (GHz) Noise Figu ure (db) V -2.4V -2.6V -2.8V -3V Frequency (GHz) CHA Freq Ref : Product BU date : June

24 CHA3080/90-98F E-Band Amplifier / GHz Application E Band radio Opto electronics Millimeter wave Imaging Radars Specific features Power detector inside Gain control via gate biasing Power Amplifier RF bandwidth: 71-76GHz Linear Gain: 16dB Power at 1dB: 19dBm OIP3: 25dBm Integrated power detector Gain control range: 10dB Consumption: 3.5V, 0.28A CHA3080 CHA Freq Ref : Product BU date : June

25 CHA3080/90-98F E Band MPA 3dB comp (dbm) 1dB comp & Output Power (dbm) and Linear Gain (db) CHA3080 1dB comp 3dB comp Linear Gain Frequency (GHz) in (db) Linear Gai 1dB comp & 3dB comp (dbm) CHA3090 Output Power (dbm) and Linear Gain (db) P-1dB P-3dB S Frequency (GHz) Linear Gain (db) CHA3080 CHA Freq Ref : Product BU date : June 2013

26 Coming soon E-Band Down Converter 71-86GHz Targeted performances Sub Harmonic mixer Chip size : 7.6 mm² Release expected in Q4/2013 Parameter Units Min Typ (T=25 C) Max RF input frequency GHz 71/81 76/86 RF input RL db 10 Notes RF input P_1dB dbm -10 IF=10GHz RF input IP3 dbm 0 Conversion Gain db 8 Noise Figure db 4.5 IF=6,10,12GH z Gain control db 12 IF=10GHz LO input frequency GHz 38.5/ /40 LO input Return loss db 16 LO input power dbm LOx2 leakage to RF port dbm -36/-41 IF=10GHz Image rejection dbc >20/17.5 IF output frequency GHz DC 12 Positive supply Voltage V 3.5 Positive supply Current ma 185 Negative supply Voltage V Gain control Max Power consomption W 0.6/.65 Measured To be Checked Ref : Product BU date : June

27 Coming soon On wafer measurements E-Band Down Converter 71-86GHz Gain control Channel Q inf IF=10GHz, PLO=0dBm, Gx=-2V, GLO-2.25V GRF -2.1 to -3.4V Gain control Channel I sup IF=10GHz, PLO=0dBm, Gx=-2V, GLO-2.25V GRF -2.1 to -3.4V GC_Q (db) GC_I (db) Freq RF (GHz) Freq RF (GHz) Ref : Product BU date : June

28 Under development E-Band Mixer 71-86GHz GHz Sub Harmonic mixer Chip size : 5.2 mm² Release expected in Q4/2013 Targeted performances Parameter Units Min Typ T=25 C Max Notes RF freq. GHz 71/81 76/86 RF input RL db 10/14 RF input P_1dB dbm >10 RF input IP3 dbm IF input RL db 12 IF input P_1dB dbm 5 IF input IP3 dbm Conversion Gain db -11 Noise Figure db 13 LO input frequency GHz 38.5 / /40 LO input Return loss db 12 LO input power dbm 0 2 LOx2 leakage to RF port dbm < -21/-11 Image rejection dbc 14/16 IF frequency GHz DC Positive supply Voltage V 3.5 Positive supply Current ma 95 Negative supply Voltage V -2.2 Max Power consomption W 0.33 Ref : Product BU date : June

29 IMS2013 / Update on latest MMIC product development Thank you Please visit us at our booth # 2220 Ref : Product BU date : June