Risk assessment of high voltage Silicon and. Silicon Carbide diodes for Space applications

Transcription

1 MEWS 27 Risk assessment of high voltage Silicon and Silicon Carbide diodes for Space applications DLR, Hans-Dieter Herrmann

2 Chart 2 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 DLR German Aerospace Center Aeronautics Space Transportation Energy Research Institution Space Agency Project Management Agency

3 Chart 3 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Locations and Employees 7720 employees across 32 institutes and facilities at 16 sites. Offices in Brussels, Paris, Tokyo and Washington. Turnover 3 Billion Stade Hamburg Bremen Trauen Berlin Braunschweig Goettingen Cologne Bonn Neustrelitz Lampoldshausen Stuttgart Augsburg Oberpfaffenhofen Weilheim

4 Chart 4 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Introduction: DLR is taking care of about ten qualification projects each year. Most of these projects run for several years. Some examples of the current running projects are: ESCC Capability Approval for a LTCC production line ESCC Capability Approval for a Space Asic Radiation Characterization of different GaN-Transistor Topologies Now we want to concentrate on a finished one: Risk assessment of HV Silicon and SiC diodes for Space

5 Chart 5 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (1) Why use SiC Diodes (1)? Lower power losses Higher operating temperature possible r thermal conductivity (?) Higher thermal conductivity Commonly used in commercial products

6 Chart 6 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (2) Why use SiC Diodes (2)? Schottky diode No reverse recovery losses => Lower power losses! Wider band-gap (3.23 ev) compared to (<2V) for Si => Higher breakdown electric field strength Very often inherent radiation hardness is advertised!

7 Chart 7 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (3) Goals: Verify the radiation hardness of SiC diodes => close the gap between controversial publications Check the TID & SEE hardness SEE hardness is a must!! Get a sufficient base for a following ESCC evaluation

8 Chart 8 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (4) Project Description: Assessment of Radiation hardness of SiC diodes (2A + 5A) compared to Si diodes both with VBR>1200V Electrical characterization before and after radiation Testing of SEE and TID Interpretation of results Time schedule November 2013 January 2014 SEE Radiation Tests in November 2013 TID Radiation Tests in January 2014

9 Chart 9 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (5) Results (1): TID-Values: SiC diodes 2A-types: 1050kRad (Co-60 gamma source) SiC diodes 5A-types: 1050kRad (Co-60 gamma source) Si diodes: 1050kRad (Co-60 gamma source).

10 Chart 10 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (5) Results (2): SEE-Values: SiC diodes 2A-Type: V SEE critical=200v for LET =60MeV/mg/cm² (Xe-Beam) V SEE critical=250v for LET =40MeV/mg/cm² (Kr-Beam) SiC diodes 5A-Type: V SEE critical=250v for LET =60MeV/mg/cm² (Xe-Beam) V SEE critical=275v for LET =40MeV/mg/cm² (Kr-Beam) Si diodes: V SEE critical=800v for LET =60MeV/mg/cm² (Xe-Beam) V SEE critical=900v for LET =40MeV/mg/cm² (Kr-Beam)..

11 Chart 11 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Risk assessment of HV Silicon and SiC diodes (6) Status : SiC diodes are not SEE hard for V BR >250V! Further SiC radiation testing will be started by ESA Up to now no events for a design problem SiC material problem is most likely. Si diodes are SEE hard for V BR <800V with potential to increase voltage value up > 1000V

12 Chart 12 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Thank you for your attention! Dipl.-Ing. Hans-Dieter Herrmann Standardization and EEE Components German Aerospace Center Quality and Product Assurance Porz-Wahnheide, Linder Hoehe Cologne, Germany Telephone Telefax Dipl.-Phys. Stephan Bonk German Aerospace Center Dipl.-Ing. Guido Joormann German Aerospace Center Head - Standardization and EEE Components Quality and Product Assurance Standardization and EEE Components Quality and Product Assurance Porz-Wahnheide, Linder Hoehe Cologne, Germany Porz-Wahnheide, Linder Hoehe Cologne, Germany Telephone Telefax stephan.bonk@dlr.de Telephone Telefax guido.joormann@dlr.de

13 Chart 13 MEWS27 > DLR Presentation > Version 1.52 > H.-D. Herrmann > 24th of October 2014 Abbrevation list: HV High Voltage LET Linear Energy Transfer SEE Single Event Effect SEB Single Event Burnout Si Silicon SiC Silicon Carbide TID Total Ionizing Dose VBR Breakdown Voltage..