Market Forecasts for Silicon Carbide & Gallium Nitride Power Semiconductors. Richard Eden Senior Analyst IMS Research (an IHS company)
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1 Market Forecasts for Silicon Carbide & Gallium Nitride Power Semiconductors Richard Eden Senior Analyst IMS Research (an IHS company)
2 SiC & GaN Power Semiconductors In 2022, the global power semiconductor market will be worth approximately $65 Billion But how much of that will be SiC & GaN? Sources: The World Market for Power Management & Driver ICs 2013 Edition The World Market for Power Semiconductor Discretes & Modules 2013 Edition
3 SiC & GaN Power Semiconductors Introduction Research methodology A brief history of the SiC & GaN power market Device manufacturers and developers SiC and GaN Market Forces and Trends Market drivers and barriers Key applications Device cost trends Conclusions Market forecasts by technology, product and sector
4 Research methodology and data sources Research carried out from Oct 12 to Feb 13 Research sources: Primary research: Over 50 interviews with: SiC & GaN semiconductor manufacturers and developers Wafer, epitaxial-wafer, packaging & production equipment suppliers Companies operating in featured end applications IMS Research Power Semiconductor Discretes & Modules End equipment numbers from other IMS Research reports
5 SiC Power Semiconductor Timeline
6 GaN Power Semiconductor Timeline
7 Device Manufacturers and Developers Silicon Carbide: Gallium Nitride:
8 Key Drivers & Barriers for Growth Drivers Lower losses Higher switching frequencies Higher operating temperature Robust, reliable, Rad-hard High breakdown voltage GaN prices near to Si GaN has no body diode Device integration on Si Barriers High SiC material costs Design inertia: the reluctance to change Not drop-in swap for Si Normally-On switches Proof of reliability SiC MOSFET gate oxide Availability; no 2nd source GaN defects GaN Si material mismatch
9 Key Applications Automotive/HEV Industrial Motor Drives PV Inverters Power Supplies & UPS Traction Wind Turbines
10 SiC Device price trends SiC Diodes currently cost x5 x7 Silicon Schottky Diodes SiC JFETs cost x4 x7 Silicon MOSFETs SiC MOSFETs cost x10 x15 Silicon MOSFETs Data Source: The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors 2013
11 The substrate wafer supplier base Cree s SiC wafer domination is falling Dow Corning, II-VI, SiCrystal, Sumitomo and others Move to 6 SiC wafers needed to reduce costs by 20-50% 6 SiC wafers samples available in 2012 but behind schedule Device prices fall Blank Silicon wafers are available in 4, 6 & 8 GaN epiwafer supplier numbers increasing: Azzurro, DOWA, NTT, EpiGaN, Soitec, IQE and others 6 epiwafers available now, but volume just starting to ramp Need improved performance, mismatch and repeatability
12 SiC Power Semiconductor Market Data Source: The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors 2013
13 GaN-on-Silicon Power Semiconductor Market Data Source: The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors 2013
14 Overall SiC & GaN Power Semiconductor Market Data Source: The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors 2013
15 Conclusions SiC dominates at 1200V and above Prices are the biggest barrier preventing adoption SiC Module revenue to overtake Discretes SiC to eventually become established in diverse high-voltage industrial niches GaN will dominate up to 900V GaN prices should match Silicon equivalents in 2019 Most 600V SiC Schottky will move to GaN GaN will become established in consumer and computing/server power conversion applications Must proof reliability before industrial applications adopt
16 Findings from: The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors 2013 Edition Any Questions? Richard Eden Senior Analyst (IMS Research) Contact: Tel: Web:
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