Z-Rec Rectifier. C4D02120E Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications

Transcription

1 C4D212E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 4.5 Q c = 11 nc Features Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 PIN 2 TO CSE pplications Solar Inverters Power Factor Correction Part Number Package Marking C4D212E TO C4D212 Maximum Ratings (=25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 12 V SM Surge Peak Reverse Voltage 13 V V DC DC Blocking Voltage 12 V Maximum DC Current =25 =135 =162 RM Repetitive Peak Forward Surge Current 14.4 =25, t P = ms, Half Sine pulse =1, t P = ms, Half Sine pulse SM Non-Repetitive Peak Forward Surge Current =25, t P = ms, Half Sine pulse =1, t P = ms, Half Sine pulse,max Non-Repetitive Peak Forward Current 2 16 =25, t P = ms, Pulse =1, t P = ms, Pulse P tot Power Dissipation W =25 =1 Operating Junction Range -55 to +175 T stg Storage Temperature Range -55 to C4D212E Rev. E

2 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current Q C Total Capacitive Charge 11 nc C Total Capacitance Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics V μ pf = 2 =25 C = 2 = 12 V =25 C = 12 V = 8 V, = 2 di/dt = 2 /μs = 25 C Symbol Parameter Typ. Unit R θjc TO-252 Package Thermal Resistance from Junction to Case 2.9 C/W = V, = 25 C, f = 1 MHz = 4 V, = 25, f = 1 MHz = 8 V, = 25, f = 1 MHz Typical Performance =-55 C = 25 C = 75 C =125 C 5 4 () I R (μ) 3 2 =-55 C = 25 C = 75 C =125 C V F Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C4D212E Rev. E

3 Typical Performance 35 6 (peak) () % Duty 2% Duty 3% Duty 5% Duty 7% Duty DC P Tot (W) Figure 3. Current Derating Figure 4. Power Derating Qrr (nc) C (pf) Figure 5. Recovery Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C4D212E Rev. E

4 Typical Performance Thermal Resistance (/W) E-6 E-6 E-6 1E-3 E-3 E-3 1 T (sec) Figure 7. Transient Thermal Impedance Diode Model V ft = V T +If*R T V T =.9592+( * -1.2* -3 ) R T =.1673+( * 2.* -3 ) Note: = Diode Junction Temperature in Degrees Celsius V T R T 4 C4D212E Rev. E

5 Package Dimensions Package TO * POS Inches Millimeters Min Max Min Max B C D* E F G H J.9 TYP TYP K L M N P Q R R. TYP R.254 TYP S T U Note: * Tab D may not be present Recommended Solder Pad Layout.12 Part Number Package Marking C4D212E TO C4D212 TO Note: Recommended soldering profiles can be found in the applications note here: 5 C4D212E Rev. E

6 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright 214 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: Fax: C4D212E Rev. E