C3D03060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)

Transcription

1 3D3F Silicon arbide Schottky Diode Z-Rec Rectifier (Full-Pak) RM = V ( =11 ) = 3 Q c =.7 n Features -Volt Schottky Rectifier Zero Reverse Recovery urrent Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature oefficient on V F Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway pplications Switch Mode Power Supplies (SMPS) Boost diodes in PF or D/D stages Free Wheeling Diodes in Inverter stages /D converters Package TO--F PIN 1 PIN Part Number Package Marking 3D3F TO--F 3D3 Maximum Ratings ( = 5 unless otherwise specified) Symbol Parameter Value Unit Test onditions Note RM Repetitive Peak Reverse Voltage V SM Surge Peak Reverse Voltage V V D D Blocking Voltage V ontinuous Forward urrent 5 3 =5 =11 =135 Fig. 3 RM Repetitive Peak Forward Surge urrent 15 =5, t P =1 ms, Half Sine Wave D=.3 =11, t P =1 ms, Half Sine Wave D=.3 SM Non-Repetitive Peak Forward Surge urrent =5, t P =1 ms, Half Sine Wave D=.3 =11, t P =1 ms, Half Sine Wave D=.3 SM Non-Repetitive Peak Forward Surge urrent 1 =5, t P =1 µs, Pulse P tot Power Dissipation W =5 =11 Fig. dv/dt Diode dv/dt ruggedness V/ns =-V T J, T stg Operating Junction and Storage Temperature -55 to +175 TO- Mounting Torque 1. Nm lbf-in M3 Screw -3 Screw 1 3D3F Rev. D, -1

2 Electrical haracteristics Symbol Parameter Typ. Max. Unit Test onditions Note V F I R Forward Voltage Reverse urrent Q Total apacitive harge 7. n Total apacitance V μ pf = 3 T J =5 = 3 T J =175 = V T J =5 = V T J =175 = V, = 3 di/dt = 5 /μs T J = 5 = V, T J = 5, f = 1 MHz = V, T J = 5, f = 1 MHz = V, T J = 5, f = 1 MHz Fig. 1 Fig. Fig. 5 Fig. E apacitance Stored Energy 1.1 μj = V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal haracteristics Symbol Parameter Typ. Unit Note R θj Thermal Resistance from Junction to ase 1 /W Fig. Typical Performance 1 1 T J = -55 Fowa ard I urrent, () F () T J = 5 T J = 75 T J = 15 T J = 175 Reverse Leaka age I urrent, I RR (u) R (m) T J = 175 T J = 15 T J = 75 T J = 5 T J = Foward V F Voltage, (V) V F (V) 1 Reverse VVoltage, R (V) (V) Figure 1. Forward haracteristics Figure. Reverse haracteristics 3D3F Rev. D, -1

3 Typical Performance % Duty % Duty 3% Duty 5% Duty 7% Duty D 1 1 (peak) () 1 P Tot (W) Figure 3. urrent Derating Figure. Power Derating apacit tive Q harge, Q (n) (n) 1 1 onditions: T J = 5 a apacitance (pf) (pf) onditions: T J = 5 F test = 1 MHz V test = 5 mv Reverse VVoltage, R (V) (V) Reverse VVoltage, R (V) (V) Figure 5. Total apacitance harge vs. Reverse Voltage Figure. apacitance vs. Reverse Voltage 3 3D3F Rev. D, -1

4 Typical Performance 3 apacitance Sto ored E Energy, E (µj) (mj) Reverse V Voltage, (V) R (V) Figure 7. apacitance Stored Energy Thermal Resistance ( /W) 1 1 1E SinglePulse 1E-3 1E- 1E- 1E- 1E-3 1E-3 1E T (Sec) Figure. Transient Thermal Impedance 3D3F Rev. D, -1

5 Package Dimensions Package TO--F E F G H B POS Inches Millimeters Min Max Min Max B D E F G H L M N. TYP 5. TYP L M P S D T P S T NOTE: 1. Dimension L, M, T apply for Solder Dip Finish N PIN 1 PIN Recommended Solder Pad Layout TO-- Part Number Package Marking 3D3F TO--F 3D3 Note: Recommended soldering profiles can be found in the applications note here: 5 3D3F Rev. D, -1

6 Diode Model Vf T = V T +If*R T V T =.9+(T J * -1.1*1-3 ) R T =.15+(T J * 9.5*1 - ) Note: T j = Diode Junction Temperature In Degrees elsius, valid from 5 to 175 V T R T Notes RoHS ompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 11/5/E (RoHS), as implemented January, 13. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at REh ompliance REh substances of high concern (SVHs) information is available for this product. Since the European hemical gency (EH) has published notice of their intent to frequently revise the SVH listing for the foreseeable future,please contact a ree representative to insure you get the most up-to-date REh SVH Declaration. REh banned substance information (REh rticle 7) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links ree Si Schottky diode portfolio: Schottky diode Spice models: Si MOSFET and diode reference designs: opyright 1 ree, Inc. ll rights reserved. The information in this document is subject to change without notice. ree, the ree logo, and Zero Recovery are registered trademarks of ree, Inc. ree, Inc. Silicon Drive Durham, N 773 US Tel: Fax: D3F Rev. D, -1