C3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier
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1 C3D060D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 600 V ( =135 C) = 28 A** Q c = nc** Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Package TO Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications Switch Mode Power Supplies Power Factor Correction - Typical PFC P out : 00W-4000W Motor Drives - Typical Power : 5HP-HP Part Number Package Marking C3D060D TO C3D060 Maximum Ratings ( = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 600 V SM Surge Peak Reverse Voltage 600 V V DC DC Blocking Voltage 600 V Continuous Forward Current (Per Leg/Device) 29.5/59 14/28 / A =25 C =135 C =152 C RM Repetitive Peak Forward Surge Current (Per Leg/Device) 67/134 44/88 A =25 C, t P = ms, Half Sine Wave, D=0.3 =1 C, t P = ms, Half Sine Wave, D=0.3 SM Non-Repetitive Peak Forward Surge Current (Per Leg/Device) 90/157 71/115 A =25 C, t P =ms, Half Sine Wave, D=0.3 =1 C, t P = ms, Half Sine Wave, D=0.3 SM Non-Repetitive Peak Forward Surge Current (Per Leg/Device) 2/0 A =25 C, t P = µs, Pulse P tot Power Dissipation (Per Leg) W =25 C =125 C, T stg Operating Junction and Storage Temperature -55 to +175 C TO-247 Mounting Torque Nm lbf-in M3 Screw 6-32 Screw * Per Leg, ** Per Device 1 C3D060D Rev. D
2 Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current Q C Total Capacitive Charge 25 nc C Total Capacitance Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics V μa pf = A =25 C = A =175 C = 600 V =25 C = 600 V =175 C = 600 V, = A di/dt = 0 A/μs = 25 C = 0 V, = 25 C, f = 1 MHz = 0 V, = 25 C, f = 1 MHz = 400 V, = 25 C, f = 1 MHz Symbol Parameter Typ. Unit R θjc Thermal Resistance from Junction to Case ** Per Leg, * Both Legs 1.1 ** 0.55 * C/W Typical Performance (Per Leg) 0 Forward Current (A) = 25 C = 75 C = 125 C = 175 C I R Reverse Voltage (μa) = 25 C = 75 C = 125 C = 175 C V F Forward Voltage (V) Reverse Voltage (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D060D Rev. D
3 C Capacitance (pf) Typical Performance (Per Leg) % Duty* 30% Duty* % Duty* 70% Duty* DC (A) C Capacitance (pf) C Reverse Voltage (V) Reverse Voltage (V) Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage 1E1 1.0E E+00 Zth ( C/W) 1E0 1.0E-01 1E-1 1.0E E-03 1E-2 1E-5 1.E-07 1E-4 1.E-06 1.E-05 1E-3 1.E-04 1E-2 1.E-03 1E-1 1.E-02 1E0 1.E-01 1.E+00 1E1 Time (s) Figure 5. Transient Thermal Impedance 3 C3D060D Rev. D
4 Power Dissipation (W) Typical Performance (Per Leg) Case Temperature ( C) Figure 6. Power Derating Diode Model (Per Leg) Vf T = V T +If*R T V T = 0.98+( * -1.6* -3 ) R T = 0.04+( * 0.522* -3 ) Note: T j = Diode Junction Temperature In Degrees Celsius V T R T 4 C3D060D Rev. D
5 Package Dimensions Package TO CC W Y X Z BB AA Inches Millimeters POS Min Max Min Max A B C D E F G.215 TYP TYP H J K L M N P Q R S T U V W X Y Z AA BB CC Recommended Solder Pad Layout Part Number Package Marking C3D060D TO C3D060 TO Note: Recommended soldering profiles can be found in the applications note here: 5 C3D060D Rev. D
6 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 11/65/EC (RoHS2), as implemented January 2, 13. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright 13 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc Silicon Drive Durham, NC USA Tel: Fax: C3D060D Rev. D
Package TO = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note 29.5/59 14/28 10/20 67/134 44/88 90/157 71/115
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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