C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier

Transcription

1 C3D1P7Q Silicon Carbide Schottky Diode Z-Rec Rectifier RM = V ( =135 C) = 3.3 A Q c = 4 nc Features -Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on V F Benefits Small compact surface mount package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Package PowerQFN 3.3x3.3 Part Number Package Marking C3D1P7Q QFN 3.3 C3D1P7 Applications Switch Mode Power Supplies LED Lighting Medical imaging systems Maximum Ratings ( = 5 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage V SM Surge Peak Reverse Voltage V V DC DC Blocking Voltage V Continuous Forward Current A =5 C =135 C =15 C Fig 3 RM Repetitive Peak Forward Surge Current A =5 C, t P = 1 ms, Half Sine Wave =11 C, t P = 1 ms, Half Sine Wave SM Non-Repetitive Peak Forward Surge Current 15 1 A =5 C, t p = 1 ms, Half Sine Wave =11 C, t p = 1 ms, Half Sine Wave Fig. 8,Max Non-Repetitive Peak Forward Surge Current 5 4 =5 C, t P = 1 µs, Pulse =11 C, t P = 1 µs, Pulse Fig. 8 P tot Power Dissipation W =5 C =11 C Fig. 4 T J, T stg Operating Junction and Storage Temperature -55 to +1 C 1 C3D1P7Q Rev. F, 1-15

2 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current Q C Total Capacitive Charge 4 nc C Total Capacitance V μa pf = 1.7 A =5 C = 1.7 A =15 C = V =5 C = V =15 C = 4 V, = 1.7A di/dt = 5 A/μs = 5 C = V, = 5 C, f = 1 MHz = V, = 5 C, f = 1 MHz = 4 V, = 5 C, f = 1 MHz Fig. 1 Fig. Fig. 5 Fig. E C Capacitance Stored Energy. μj = 4 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 3.8 C/W Fig. 9 Typical Performance 14 1 Fowa ard I Current, (A) F (A) T J = -55 C T J = 75 C T J = 15 C T J = 15 C Reverse Leaka age I Current, I RR (ua) R (ma) 8 4 T J = 15 C T J = 15 C T J = 75 C T J = -55 C Foward VVoltage, F (V) V F (V) Reverse VVoltage, R (V) (V) Figure 1. Forward Characteristics Figure. Reverse Characteristics C3D1P7Q Rev. F, 1-15

3 Typical Performance (peak) (A) (A) % Duty % Duty 3% Duty 5% Duty 7% Duty DC P P TOT Tot (W) ( C) C ( C) C Figure 3. Current Derating Figure 4. Power Derating Capacit tive Q Charge, C (nc) Q C (nc) Conditions: Ca apacitance C (pf) (pf) Conditions: F test = 1 MHz V test = 5 mv Reverse VVoltage, R (V) (V) Reverse VVoltage, R (V) (V) Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure. Capacitance vs. Reverse Voltage 3 C3D1P7Q Rev. F, 1-15

4 Typical Performance 1 1. Capacitance Sto ored E Energy, E C (µj) C (mj) Reverse VVoltage, (V) R (V) SM FSM (A) 1 T J_initial = 5 C T J_initial = 11 C 1 1E- 1E- 1E-3 1E-3 Time, t p (s) t p (s) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance Thermal Resistance ( C/W) ( o C/W) 1 1E SinglePulse 1E-3 1E- 1E- 1E- 1E-3 1E-3 1E-3 1 Time, T (Sec) t p (s) Figure 9. Transient Thermal Impedance 4 C3D1P7Q Rev. F, 1-15

5 Package Dimensions Package QFN 3.3 All Dimensions are in mm Tolerances are.5 mm if not specified NC = No Connect 5 C3D1P7Q Rev. F, 1-15

6 Recommended Landing Pattern (All Dimensions are in mm) Note: The design of the land pattern and the size of the thermal pad depend mainly on the thermal characteristic and power dissipation. In general, the size of the thermal pad should be as close to the exposed pad of the package as possible, provided that there is no bridging between the thermal pad and the lead pads. The.5mm extra length and width provides space to accommodate the placement tolerance of the component during pick and place process. The.15mm along the perimeter present areas for solder to form fillet along the side metal edges of the package. Note: Recommended soldering profiles can be found in the applications note here: C3D1P7Q Rev. F, 1-15

7 Diode Model Vf T = V T + If * R T V T = (T J * 1.1*1-3 ) R T =.13 + (T J * 1.1*1-3 ) Note: T V T R j = Diode Junction Temperature In Degrees Celsius, T valid from 5 C to 175 C Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 11/5/EC (RoHS), as implemented January, 13. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 7) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: Schottky diode Spice models: SiC MOSFET and diode reference designs: Copyright 15 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 4 Silicon Drive Durham, NC 773 USA Tel: Fax: C3D1P7Q Rev. F, 1-15