C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier
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1 C3D65I Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on V F Benefits Electrically Isolated Package Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway pplications Package TO-22 Isolated PIN 1 PIN 2 RM = 65 V ( =125 C) = Q c = 24 nc CSE HVC Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter Stages C/DC converters Part Number Package Marking C3D65I Isolated TO-22-2 C3D65I Maximum Ratings ( = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note RM Repetitive Peak Reverse Voltage 65 V SM Surge Peak Reverse Voltage 65 V V DC DC Blocking Voltage 65 V Continuous Forward Current 19 9 =25 C =125 C =135 C Fig. 3 RM Repetitive Peak Forward Surge Current = ms, Half Sine Pulse -1 C, t P = ms, Half Sine Pulse SM Non-Repetitive Peak Forward Surge Current 9 7 = ms, Half Sine Pulse =1 C, t P = ms, Half Sine Pulse Fig. 8,Max Non-Repetitive Peak Forward Surge Current = ms, Pulse =1 C, t P = ms, Pulse Fig. 8 P tot Power Dissipation 6 26 W =25 C =1 C Fig. 4 dv/dt Diode dv/dt ruggedness 2 V/ns =-65V i 2 dt i 2 t value s = ms =1 C, t P = ms T J, T stg Operating Junction and Storage Temperature -55 to +175 C TO-22 Mounting Torque Nm lbf-in M3 Screw 6-32 Screw 1 C3D65I Rev. E, 1-218
2 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note V F I R Forward Voltage Reverse Current Q C Total Capacitive Charge 24 nc C Total Capacitance V μ pf = T J =25 C = T J =175 C = 65 V T J =25 C = 65 V T J =175 C = 4 V, = di/dt = 5 /μs T J = 25 C = V, T J = 25 C, f = 1 MHz = 2 V, T J = 25 C, f = 1 MHz = 4 V, T J = 25 C, f = 1 MHz Fig. 1 Fig. 2 Fig. 5 Fig. 6 E C Capacitance Stored Energy 3.6 μj = 4 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R θjc Thermal Resistance from Junction to Case 2.5 C/W Fig. 9 Typical Performance Fowa ard Current, I () F () 3 T J = -55 C 25 2 T J = 75 C T J = 125 C 15 T J = 175 C Foward VVoltage, F (V) V F (V) Reverse Leaka age I Current, I RR (m) R (m) T J = 175 C T J = 125 C T J = 75 C T J = -55 C Reverse Voltage, (V) (V) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 C3D65I Rev. E, 1-218
3 Typical Performance % Duty 2% Duty 3% Duty 5% Duty 7% Duty DC 6 5 (peak) () 4 3 P Tot (W) C C Figure 3. Current Derating Figure 4. Power Derating ive Q Charge, C (nc) Q C (nc) Capaciti Conditions: Ca apacitance C (pf) (pf) Conditions: F test = 1 MHz V test = 25 mv Reverse VVoltage, R (V) (V) 1 Reverse VVoltage, R (V) (V) Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage 3 C3D65I Rev. E, 1-218
4 Typical Performance 1, 9 8 Capacitance Sto ored E Energy, E C (µj) C (mj) Reverse VVoltage, (V) R (V) SM SM () T J = 1 C E-6 E-6 1E-3 E-3 Time, t p (s) t p (s) Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Thermal Resistance ( C/W) 1 E-3 E SinglePulse 1E-3 1E-6 E-6 E-6 1E-3 E-3 E-3 1 T (Sec) Figure 9. Transient Thermal Impedance 4 C3D65I Rev. E, 1-218
5 Package Dimensions Package TO-22-2 Recommended Solder Pad Layout TO-22-2 Part Number Package Marking C3D65I Isolated TO-22-2 C3D65I Note: Recommended soldering profiles can be found in the applications note here: 5 C3D65I Rev. E, 1-218
6 Diode Model Vf T = V T + If * R T V T =.94 + (T J * -1.3* -3 ) R T =.44 + (T J * 4.4* -4 ) Note: T V T R j = Diode Junction Temperature In Degrees Celsius, T valid from 25 C to 175 C Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at RECh Compliance RECh substances of high concern (SVHCs) information is available for this product. Since the European Chemical gency (ECH) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date RECh SVHC Declaration. RECh banned substance information (RECh rticle 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links Cree SiC Schottky diode portfolio: Schottky diode Spice models: SiC MOSFET and diode reference designs: Copyright 218 Cree, Inc. ll rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 US Tel: Fax: C3D65I Rev. E, 1-218
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationMDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω
MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationPower MOSFET FEATURES. IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP460, SiHFP460 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 42 Configuration Single TO-247 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
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HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationPower MOSFET FEATURES. IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
More informationFFSH5065A. Silicon Carbide Schottky Diode 650 V, 50 A
Silicon Carbide Schottky Diode 65 V, 5 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
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IRFP60, SiHFP60 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 2 Configuration Single TO-27 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationDevice Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
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MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 0.27 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationPower MOSFET. IRFI830GPbF SiHFI830G-E3 IRFI830G SiHFI830G T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 1.5 Q g (Max.) (nc) 38 Q gs (nc) 5.0 Q gd (nc) 22 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationPower MOSFET FEATURES. IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET FEATURES. IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50K SiHFB20N50K
Power MOSFET IRFB20N50K, SiHFB20N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.2 Q g (Max.) (nc) 0 Q gs (nc) 33 Q gd (nc) 54 Configuration Single D TO-220 G G DS S FETURES Low Gate Charge Q
More informationNo or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications
Datasheet 650 V power Schottky silicon carbide diode Features K A K K No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications TO-220AC K A K A NC D²PAK
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HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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