600V/650V CoolMOS Fast Body Diode Series (CFD/CFD2/CFDA)
|
|
- Juniper Thompson
- 5 years ago
- Views:
Transcription
1 6V/65V Fast Body Diode Series (CFD//CFDA)
2 technology is Infineon s second generation fast switching superjunction MOSFETs with integrated Fast Body Diode offering improved Energy Efficiency. It is the best choice for resonant switching topologies in applications like Telecom, Server, Battery Charging, Solar, HID Lamp Ballast and LED Lighting. MOSFET with Integrated Fast Body Diode Why is there a need for a Fast Body Diode? Most resonant circuits are half or full bridge topologies (2 or 4 transistors). As transistors are switched on and off, energy can be left in the transistor. If due to fast transition times this happens continually then a Fast Body Diode is required to make sure all the energy will leave the transistor and avoid failures (CFD//CFDA series). What is the difference between the CFD & series? series was designed as direct replacement for the well established CFD series of. Besides higher breakdown-voltage of with 65V, this new high voltage series with integrated body diode offers valuable improvements compared to the previous CFD series. The product portfolio provides all benefits of fast switching superjunction MOSFETs and additionally: Increased light load efficiency due to lower gate charge value Less energy gets stored in output capacitance, which is crucial for efficiency in high line or light load conditions E oss Limited voltage overshoot during hard commutation Self limiting di/dt and dv/dt (softer commutation) results in reduced EMI appearance and higher reliability Low Q rr at repetitive commutation on body diode & low Q oss enable lower switching losses Reduced turn on and turn off delay times enable higher duty cycles and/or higher switching frequency Improved cost/performance compared to 6V CFD predecessor Technology availability also in SMD package Furthermore easy implementation as well as outstanding product quality and reliability remain key benefits of the series. Specification Symbol SPW47N6CFD IPW65R8CFD Benefits On-state resistance: maximum rating, 25 C R DS(on) 83mΩ 8mΩ Lower conduction losses Total gate charge Q g 248nC 17nC Improved light load efficiency Breakdown voltage V DS 6V 65V Higher overvoltage margin provides increased safety range & flexibility of the part to be used in more applications such as SMPS & Solar Reverse recovery charge Q rr 2μC 1μC Reduced switching losses Energy stored in the output capacitance E 4V 2μJ 12μJ Reduced switching losses Reverse recovery time t rr 21ns 18ns Faster recovery What is the difference between & CFDA? CFDA is based on technology, so performance is comparable. is addressing Consumer and Industrial Applications. The CFDA series is even qualified to Automotive standard AEC-Q11, and therefore perfectly suitable for design into Automotive applications.
3 Feature comparison between, CFD and closest competition Limited voltage overshoot by during hard commutation of conducted body diode CFD vs. efficiency comparison in a 12 V Server SMPS used Topologie ZVS 1 khz Lower conduction losses and very fast switching due to low Q rr of technology 8 6 T=25 C; lf=2a; Rg, d=5.6 Ohm; Ugs=13V SPW47N6CFD 676V IPW65R8CFD Comp2 6V 569V Softer Commutation Behavior U [V] 4 452V Efficiency [%] Improved Light Load Efficiency I d [A] Ids_SPW47N6CFD Ids_IPW65R8CFD 2 Less Voltage Overshoot IPA65R42CFD SPA11N6CFD 1 2 t [μs] Pout [W] Time [μ].45.5 Limited voltage overshoot due to soft commutation behavior of contributes to higher reliability Significantly less voltage overshoot of compared to competition enables easier design in Improved light load efficiency due to lower Q g New standards for servers require an efficiency measurement at 1% of maximum load rather than the previous 25% load. The above improved efficiency at low load enables customers to meet these new requirements Low Q rr of technology enables lower conduction losses Softer commutation behavior reduces EMI as fast switching of current or voltage i.e. di/dt or dv/dt (main causes for EMI) have been decreased. This reduced EMI behavior saves customers time and money in designing in the part CFD to Cross Reference Table I 2 PAK TO-22 TO-22 FullPAK TO-247 R DS(on) 6V CFD 65V 6V CFD 65V 6V CFD 65V 6V CFD 65V 66 IPI65R66CFD SPP7N6CFD IPP65R66CFD SPA7N6CFD IPA65R66CFD SPW7N6CFD IPW65R66CFD 42 SPI11N6CFD IPI65R42CFD SPP11N6CFD IPP65R42CFD SPA11N6CFD IPA65R42CFD SPW11N6CFD IPW65R42CFD 31 SPI15N6CFD IPI65R31CFD SPP15N6CFD IPP65R31CFD SPA15N6CFD IPA65R31CFD SPW15N6CFD IPW65R31CFD 19 SPI2N6CFD IPI65R19CFD SPP2N6CFD IPP65R19CFD SPA2N6CFD IPA65R19CFD SPW2N6CFD IPW65R19CFD 15 IPI65R15CFD SPP24N6CFD IPP65R15CFD IPA65R15CFD SPW24N6CFD IPW65R15CFD 11 IPI65R11CFD IPP65R11CFD IPA65R11CFD SPW35N6CFD IPW65R11CFD 8 SPW47N6CFD IPW65R8CFD 41 IPW65R41CFD Order Number: B152-H9654-X-X-76-DB Date: 1/212 All rights reserved. 211 Infineon Technologies AG
4 Fast Body Diode Selection Guide Voltage Range 6V 65V 65V Product Family & R DS(on) Range CFD New! CFDA New!,8Ω,72Ω,41Ω 1,4Ω,48Ω,66Ω Market Segments, Applications & SMPS Topologies Server Telecom ZVS Full Bridge/LLC Lighting HID Resonant Full Bridge UPS ZVS Full Bridge Solar LLC/ZVS Full Bridge Automotive Res. Full Bridge (DC/DC Converter, Onboard Charger)/HID Lighting PC Silverbox LLC 9+ LCD-TV LLC Half Bridge High Performance Notebook Adapter LLC Half Bridge
5 Common Applications and Topologies Resonant LLC Half-Bridge HID Lighting Solar Single phase solution, isolated V DC HV-Driver HV-Driver Infineon Controller ICE1HSO1G PFC Controller HDI Lamp Ballast Controller Phase Shift ZVS (ZVS Fullbridge) VAC OptiMOS OptiMOS 12 VDC IGBT IGBT 23V AC Automotive Topology (On-board battery charger with ZVS phase shifted topology) Bridge Rectifier PFC Stage DC/DC Stage N:1 U AC U Battery parts other Infineon parts, SiC, IGBT, Controller
6 Available Fast Body Diode Portfolio Industrial product portfolio CFD 6V R DS(on) [mω] ThinPAK 8 x 8 TO-251 IPAK TO-251 IPAK SL short leads TO-252 DPAK 7 SPP7N6CFD SPA7N6CFD SPW7N6CFD 44 SPI11N6CFD SPP11N6CFD SPA11N6CFD SPW11N6CFD 33 SPI15N6CFD SPP15N6CFD SPA15N6CFD SPW15N6CFD 22 SPI2N6CFD SPP2N6CFD SPA2N6CFD SPW2N6CFD 185 SPP24N6CFD SPW24N6CFD 115 SPW35N6CFD 8 SPW47N6CFD 65V New! 14 IPD65R1K4CFD 1) 95 IPD65R95CFD 1) 66 IPL65R66CFD 3) IPD65R66CFD IPI65R66CFD IPB65R66CFD IPP65R66CFD IPA65R66CFD IPW65R66CFD 42 IPL65R42CFD 3) IPD65R42CFD IPI65R42CFD IPB65R42CFD IPP65R42CFD IPA65R42CFD IPW65R42CFD 31 IPL65R31CFD 3) IPI65R31CFD IPB65R31CFD IPP65R31CFD IPA65R31CFD IPW65R31CFD 19 IPL65R19CFD 3) IPI65R19CFD IPB65R19CFD IPP65R19CFD IPA65R19CFD IPW65R19CFD 15 IPI65R15CFD IPB65R15CFD IPP65R15CFD IPA65R15CFD IPW65R15CFD 11 IPI65R11CFD IPB65R11CFD IPP65R11CFD IPA65R11CFD IPW65R11CFD 8 IPW65R8CFD 41 IPW65R41CFD Automotive product portfolio CFDA 65V New! 66 IPD65R66CFDA 2) IPB65R66CFDA 2) IPP65R66CFDA 2) 42 IPD65R42CFDA 2) 31 IPB65R31CFDA 2) IPP65R31CFDA 2) 19 IPB65R19CFDA 2) IPP65R19CFDA 2) IPW65R19CFDA 2) 15 IPB65R15CFDA 2) IPP65R15CFDA 2) IPW65R15CFDA 2) 11 IPB65R11CFDA 2) IPP65R11CFDA 2) IPW65R11CFDA 2) 8 IPW65R8CFDA 2) 48 IPW65R48CFDA 2) 1) Product release Q ) Product release Q ) Product release 2 nd half of 212 TO-262 I 2 PAK TO-263 D 2 Pak TO-22 TO-22 FullPAK TO-247 Power MOSFETs (naming system till 25) S P W 47 N 6 C F D Power MOSFETs (naming system from 25 onwards) I P W 65 R 41 C F D Company S = Formerly Siemens Device P = Power MOSFET Package Type A = TO-22 FullPAK B = TO-263 (D 2 PAK) D = TO-252 (DPAK) I = TO-262 (I 2 PAK) P = TO-22 U = TO-252 (IPAK) W = TO-247 Specification CFD = CFD In this case CFD as indication for with Fast Body Diode Breakdown Voltage Divided by 1 (6 x 1 = 6V) Technology N = N-Channel Transistors Continuous Drain Current (@ T C = 25 C) [A] Company I = Infineon Device P = Power MOSFET Package Type A = TO-22 FullPAK B = TO-263 (D 2 PAK) D = TO-252 (DPAK) I = TO-262 (I 2 PAK) L = ThinPAK 8x8 P = TO-22 U = TO-252 (IPAK) W = TO-247 Specification CFD = CFD In this case CFD as indication for with Fast Body Diode R DS(on) [mω] R = R DS(on) Breakdown Voltage Divided by 1 (6 x 1 = 6V) and CFDA are recommended for new designs. For further information please go on
600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)
6 V/65 V fast body diode series (//) www.infineon.com/coolmos technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved energy
More information600 V/650 V CoolMOS fast body diode series (CFD2/CFD7/CFDA)
600 V/650 V fast body diode series (CFD2//) www.infineon.com/coolmos technology is Infineon s latest generation of fast switching superjunction MOSFETs with integrated fast body diode offering improved
More informationCoolMOS SJ MOSFETs benefits
SJ MOSFETs benefits in both hard and soft switching SMPS topologies www.infineon.com/coolmos benefits Hard and soft switching topologies, applications and suitable families series Efficiency = C7 Price/performance
More informationLatest fast diode technology tailored to soft switching applications
AN_201708_PL52_024 600 V CoolMOS CFD7 About this document Scope and purpose The new 600 V CoolMOS TM CFD7 is Infineon s latest high voltage (HV) SJ MOSFET technology with integrated fast body diode. It
More informationCoolMOS SJ MOSFETs benefits
SJ MOSFETs benefits in hard and soft switching SMPS topologies www.infineon.com/coolmos Hard and soft switching topologies, applications and suitable families series benefits Efficiency = C7 Price/performance
More informationCoolMOS New Generation 600V & 650 V C6/E6 replacements for C3
CoolMOS New Generation 600V & 650 V C6/E6 replacements for CoolMOS 600V C6/E6 replacements for TO-252 DPAK TO-263 D 2 PAK TO-220 TO-220 FullPAK TO-262 I 2 PAK TO-247 R DS(on) C6/E6 3.3 Ω SPD02N60 IPD60R3k3C6
More informationPower semiconductors technology outlook
Power semiconductors technology outlook Francesco Di Domenico Principal Application Engineering Infineon Technologies Austria AG November 2016 Content 1 HP SMPS Application Roadmap update 2 HV power semiconductors
More informationIntroduction on xev automotive AC/DC, DC/DC solution and CoolMOS TM CFDA
Introduction on xev automotive AC/DC, DC/DC solution and CoolMOS TM CFDA INDEX xev Market Overview General overview xev OBC (On Board Charger) AC/DC, DC/DC LDC (Low voltage DC/DC Converter) DC/DC Automotive
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
More informationThinPAK 8x8. New High Voltage SMD-Package. April 2010 Version 1.0
ThinPAK 8x8 New High Voltage SMD-Package Version 1.0 Content Introduction Package Specification Thermal Concept Application Test Conditions Impact on Efficiency and EMI Switching behaviour Portfolio and
More informationZ V S P h a s e S h i f t F u l l B r i d g e
Z V S P h a s e S h i f t F u l l B r i d g e C F D 2 O p t i m i z e d D e s i g n IFAT PMM APS SE SL Di Domenico Francesco Mente René Edition 2013-03-14 Published by Infineon Technologies Austria AG
More informationA new 650V Super Junction Device with rugged body diode for hard and soft switching applications
A new 65V Super Junction Device with rugged body diode for hard and soft switching applications M.-A. Kutschak A), W. Jantscher A), D. Zipprick B), A. Ludsteck-Pechloff B), A) Infineon Technologies Austria
More informationDesigning Reliable and High-Density Power Solutions with GaN
Designing Reliable and High-Density Power Solutions with GaN 1 Detailed agenda Why is GaN Exciting GaN Fundamentals Cost and Reliability Totem Pole PFC Isolated LLC Motor Drive LiDAR Driving GaN Choosing
More informationAdvanced Silicon Devices Applications and Technology Trends
Advanced Silicon Devices Applications and Technology Trends Gerald Deboy Winfried Kaindl, Uwe Kirchner, Matteo Kutschak, Eric Persson, Michael Treu APEC 2015 Content Silicon devices versus GaN devices:
More informationST High Voltage Power MOSFET
ST High Voltage Power MOSFET Maurizio Giudice, Marketing Director Power Transistor Division IMS Group March-2012 Market Trend: High efficiency and Emerging Applications 2 Energy efficiency and costs Growing
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.0, 2009-09-25 Final Industrial & Multimarket IPA60R125C6, IPB60R125C6 IPP60R125C6
More informationCoolMOS TM 900V. New 900V class for superjunction devices A new horizon for SMPS and renewable energy applications. Power Management & Supply
Application Note, V1.3, May 2008 CoolMOS TM 900V A new horizon for SMPS and renewable energy applications Power Management & Supply Edition 2008-05-13 Published by Infineon Technologies AG 81726 Munich,
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket IPA60R099C6, IPB60R099C6 IPP60R099C6
More informationMOSFET. CoolMOS E6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket IPA65R190E6, IPB65R190E6 IPI65R190E6,
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket IPD60R950C6, IPB60R950C6 IPP60R950C6,
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationMetal Oxide Semiconductor Field Effect Transistor. 600V CoolMOS E6 Power Transistor IPx60R600E6. Rev. 2.0, Final
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket IPD65R380C6, IPI65R380C6 IPB65R380C6,
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationQuiet-Switching Power MOSFETs, FREDFETs, and IGBTs. Product Overview and Introduction Schedule
Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs Product Overview and Introduction Schedule TM What is MOS 8? A new generation of POWER MOS products from Microsemi Power Products Group (formerly Advanced
More informationMetall Oxide Semiconductor Field Effect Transistor. 650V CoolMOS TM E6 Power Transistor IPx65R600E6. Rev. 2.2,
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS TM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 1 Description CoolMOS
More information650 V rated superjunction MOSFET with fast body diode for automotive
AN-HV-10-2013-V0.5-EN-054 CoolMOS CFDA 650 V rated superjunction MOSFET with fast body diode for automotive About this document Scope and purpose Nowadays, there is a growing need of resonant topologies
More informationE Series Power MOSFET with Fast Body Diode
E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
More informationDesigning reliable and high density power solutions with GaN. Created by: Masoud Beheshti Presented by: Paul L Brohlin
Designing reliable and high density power solutions with GaN Created by: Masoud Beheshti Presented by: Paul L Brohlin What will I get out of this presentation? Why GaN? Integration for System Performance
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
More informationDesigning High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger
Designing High density Power Solutions with GaN Created by: Masoud Beheshti Presented by: Xaver Arbinger Topics Why GaN? Integration for Higher System Performance Application Examples Taking GaN beyond
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
More informationPower of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies
Power of GaN Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Steve Tom Product Line Manager, GaN Products stom@ti.com Solving power and energy-management
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationDesign considerations for chargecompensated. medium-voltage range. Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG
Design considerations for chargecompensated power MOSFET in the medium-voltage range Ralf Siemieniec, Cesar Braz, Oliver Blank Infineon Technologies Austria AG Outline 1 Introduction 2 Application requirements
More informationE Series Power MOSFET
E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
More informationPower MOSFET Stage for Boost Converters
UM 33-6PH Power MOSFET Stage for Boost Converters Module for Power Factor Correction Single Phase Boost Diode MOSFET Rectifier RRM = 16 RRM = 6 S = 6 = 16 I F25 = 6 25 = I FSM = 3 F (3) = 2.24 R DS(on)
More informationMetall Oxide Semiconductor Field Effect Transistor. 650V CoolMOS TM E6 Power Transistor IPx65R600E6. Rev. 2.3,
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS TM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 1 Description CoolMOS
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationA new era in power electronics with Infineon s CoolGaN
A new era in power electronics with Infineon s CoolGaN Dr. Gerald Deboy Senior Principal Power Discretes and System Engineering Power management and multimarket division Infineon will complement each of
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationE Series Power MOSFET
E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
More informationGaN in Practical Applications
in Practical Applications 1 CCM Totem Pole PFC 2 PFC: applications and topology Typical AC/DC PSU 85-265 V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC
More informationE Series Power MOSFET
E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 32 Configuration Single TO22 FULLPAK D G G D S S NChannel MOSFET ORDERING
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationE Series Power MOSFET
E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
More informationMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R600E6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS"
More informationE Series Power MOSFET
E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
More informationMOSFET. CoolMOS CP. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor Data Sheet Rev. 2.1, 2012-01-10 Final Industrial & Multimarket 1 Description The CoolMOS CP series offers
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
More informationFull Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET
Full Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET Cree Power Application Engineering Rev. 2 1 Overview ZVS converters are typically used in the following applications: Industrial power
More informationDescription. Symbol Parameter FCH041N65EF-F155 Unit V DSS Drain to Source Voltage 650 V
FCH04N65EF N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 4 mω Features 700 V @ T J = 50 C Typ. R DS(on) = 36 mω Ultra Low Gate Charge (Typ. Q g = 229 nc) Low Effective Output Capacitance (Typ. C oss(eff.)
More informationUNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationInfineon Technologies New Products Introduction
Infineon Technologies New Products Introduction July 2017 Content CoolSiC Schottky diode 650 V G6 Improved efficiency and price performance 2EDN EiceDRIVER Introduction of 2EDN7424F/R 800 V CoolMOS P7
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationFigure 1: ROHM Semiconductor SiC Diode portfolio
SiC-Diodes, SiC-MOSFETs and Gate Driver IC The best use of SiC devices and applications are shown. Uninterruptible Power Supplies (UPS) will be described in more detail. Additional to SiC, a portfolio
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationFCH190N65F-F085 N-Channel SuperFET II FRFET MOSFET
FCH9N65F-F85 N-Channel SuperFET II FRFET MOSFET 65 V, 2.6 A, 9 mω Features Typical R DS(on) = 48 mω at = V, I D = A Typical Q g(tot) = 63 nc at = V, I D = A UIS Capability Qualified to AEC Q RoHS Compliant
More informationFSFR-XS Series Fairchild Power Switch (FPS ) for Half-Bridge Resonant Converters
February 203 FSFR-XS Series Fairchild Power Switch (FPS ) for Half-Bridge Resonant Converters Features Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter Topology High Efficiency
More informationE Series Power MOSFET
E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
More informationSuper Junction MOSFET
APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationFeatures. I-PAK FQU Series
250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationCoolMOS TM. AN-CoolMOS-03 How to Select the Right CoolMOS and its Power Handling Capability. Power Management & Supply
Application Note, V1.2, Jan. 2002 CoolMOS TM AN-CoolMOS-03 How to Select the Right CoolMOS and Power Management & Supply Never stop thinking. Revision History: 2002-01 V1.2 Previous Version: V1.1 Page
More informationHow GaN-on-Si can help deliver higher efficiencies in power conversion and power management
White Paper How GaN-on-Si can help deliver higher efficiencies in power conversion and power management Introducing Infineon's CoolGaN Abstract This paper describes the benefits of gallium nitride on silicon
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationApplication Note AN V1.0 May T h i n P A K 5 x 6. IFAT PMM APS SE AC René Mente, MSc
T h i n P A K 5 x 6 IFAT PMM APS SE AC René Mente, MSc Edition 2011-02-02 Published by Infineon Technologies Austria AG 9500 Villach, Austria Infineon Technologies Austria AG 2011. All Rights Reserved.
More informationSLD8N6 65S / SLU8N65 5S
SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationE Series Power MOSFET
E Series Power MOSFET SiHF22N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) 86 Q gs (nc) Q gd (nc) 24 Configuration Single D TO22 FULLPAK G S G D NChannel MOSFET
More informationMaximizing efficiency of your LLC power stage: design, magnetics and component selection. Ramkumar S
Maximizing efficiency of your LLC power stage: design, magnetics and component selection Ramkumar S What will I get out of this session? In this session we will look at the design considerations for developing
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationA Soft And Efficient Switch For Industrial Applications
New Gen 3 650V IGBT A Soft And Efficient Switch For Industrial Applications Recent development of trench stop IGBTs has led to very performant devices. They present lower static and dynamic losses, thus
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More information12N60 12N65 Power MOSFET
12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
More information235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
More informationGet Your GaN PhD in Less Than 60 Minutes!
Get Your GaN PhD in Less Than 60 Minutes! 1 Detailed agenda Why is GaN Exciting GaN Fundamentals Cost and Reliability Totem Pole PFC Isolated LLC Motor Drive LiDAR Driving GaN Choosing a GaN Tools 4 Why
More informationE Series Power MOSFET
E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
More information