Full Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET

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1 Full Bridge LLC ZVS Resonant Converter Based on Gen2 SiC Power MOSFET Cree Power Application Engineering Rev. 2 1

2 Overview ZVS converters are typically used in the following applications: Industrial power supply Telecommunications power supply EV Battery charger FETs can simplify ZVS converter designs AND offer the following advantages: Lower system cost Improved performance Smaller size Copyright 2012, Cree Inc. 2

3 Simplify with SiC Example 1 Three-level (3L) Resonant Tank Two-level (2L) Resonant Tank Silicon: 600V MOS Three-level LLC Full bridge Typical switching frequency: 100KHZ-200KHZ Si to SiC Silicon Carbide: Two-level FB ZVS LLC resonant Target switching: >200KZ-400KHZ Can reduce BOM cost and improve efficiency 3

4 Simplify with SiC Example 2 Two-level 1 Resonant Tank 1 Two-level (2L) Resonant Tank Resonant Tank 2 Two-level 2 Silicon: 600V MOS Interleaved Two level LLC Full bridge Typical switching frequency: 100KHZ-200KHZ Si to SiC Silicon Carbide: Two-level FB ZVS LLC resonant Target switching: >200KZ-400KHZ Can reduce BOM cost and improve efficiency 4

5 TO-247 MOSFET Parameters Comparison (Gen2 1.2kV FET Vs 650V Si CoolMOS) Parameters C2M D Si CoolMOS SPW47N60CFD Si CoolMOS IPW65R110CFD Breakdown 650V 650V 0.22Ω 0.14Ω (x2 for three-level) 0.19Ω (x2 for three-level) VDS=100V 527pF 7700pF 3240pF VDS=100V 100pF 300pF 160pF VDS=100V 5pF 10pF 8pF Td(on)V Turn on delay time 7ns (VDD=800V) 30ns (VDD=400V) 16ns(VDD=400V) Td(off)V Turn off delay time 13ns (VDD=800V) 100ns(VDD=400V) 68ns(VDD=400V) Tr Rise time 12ns (VDD=800V) 30ns(VDD=400V) 11ns(VDD=400V) Tf Fall time 7ns (VDD=800V) 15ns(VDD=400V) 6ns(VDD=400V) Qg, typ 32.6nC 248nC 118nC Body diode reverse recovery time trr 35ns 210ns 150ns Body diode charge Qrr 0.120uC 2uC 0.8uC Note: The comparison is based on the datasheets 5

6 Gen2 FET Advantage in ZVS Converters Over 1.2kV blocking voltage. Simplifies Topology Low R dson to reduce conduction losses. Lower turn off losses due to short fall time and low C oss. Short turn off delay time can reduce dead time. Lower Q g will allow lower gate drive losses when switching frequency is high. Low body diode t rr and Q rr, which will reduce diode switching losses and electrical noise due to short reverse recovery time. Increases efficiency and power density. 6

7 DC Gain Design with Resonant Tank Parameters Voltage Gain (M) Voltage Gain (M) 1 fr:= fr:= 2π Lr Cr 2π 1 Lr Cr 135KHZ Resonant frequency 260KHZ Resonant frequency 650V I/P DC Gain 700V I/P DC Gain 750V I/P DC Gain Frequency (KHZ) Frequency (KHZ) Large passive LLC resonant tank Lm=150uH Lr=35uH Cr=40nF Si to SiC DC Gain Curve Small passive LLC resonant tank Lm=100uH Lr=15uH Cr=25nF

8 8KW Full Bridge LLC ZVS Resonant Converter Specification Item Parameters Input Voltage 650Vdc-750Vdc Rated Input Voltage 700Vdc Output Voltage 270Vdc Full loading Current 28A Input Power 8KW Resonant Frequency 265KHZ Frequency Range 230KHZ-320KHZ Efficiency >98% Board Size 8 x12.5 x3.5 Power Density >35W/inch^3 8

9 Board Size of 8KW Full Bridge LLC Resonant Converter (Size: 8 x12.5 x3.5 ) SiC SBD Lm Resonant Tank Cr Input with heatsink Lr Output Controller Gate Driver 9

10 Three-Level with Si Vs Two-level with SiC (8-10KW case) Items Three-level FB w/ Si 120KHZ resonant freq. Two-level FB 260KHZ resonant freq. MOSFETs 16pcs SPW47N60CFD 8pcs C2M D Flying diode Resonant Inductor Magnetize transformer 4pcs 2pcs PQ3535 2pcs PQ5050 None 1pcs PQ3535 Lr=15uH 1pcs PQ6560 Lm=100uH Resonant Capacitors MOS Drivers 35nF 8pcs 25nF 4pcs 10

11 Waveforms

12 Full Loading with 28A/270V and 700Vdc input V gsq3 (10Vdiv) V gsq4 (10Vdiv) Body diode conduction current ip(10a/div) Vab(500V/div) Rise time 1us/div Body diode conduction current 650V-800V Q1 C1 Q2 C2 b T1 DR1 Cf Cbus Lm a Lr Cr DR2 Q3 C3 Q4 C4 12

13 Half Loading with 14A/270V and 700Vdc input V gsq3 (10Vdiv) V gsq4 (10Vdiv) Body diode conduction current ip(10a/div) Vab(500V/div) Rise time 1us/div Body diode conduction current 650V-800V Q1 C1 Q2 C2 b T1 DR1 Cf Cbus Lm a Lr Cr DR2 Q3 C3 Q4 C4 13

14 Min Loading with 2A/270V and 700Vdc input V gsq3 (10Vdiv) V gsq4 (10Vdiv) ip(10a/div) Vab(500V/div) Rise time 1us/div 650V-800V Q1 C1 Q2 C2 b T1 DR1 Cf Cbus Lm a Lr Cr DR2 Q3 C3 Q4 C4 14

15 Full Loading with 28A/270V and 650Vdc input V gsq3 (10Vdiv) V gsq4 (10Vdiv) Body diode conduct current ip(10a/div) Vab(500V/div) Rise time 1us/div Body diode conduct current 650V-800V Q1 C1 Q2 C2 b T1 DR1 Cf Cbus Lm a Lr Cr DR2 Q3 C3 Q4 C4 15

16 Full Loading with 28A/270V and 750Vdc input V gsq3 (10Vdiv) V gsq4 (10Vdiv) Body diode conduction current ip(10a/div) Vab(500V/div) Rise time 1us/div Body diode conduction current 650V-800V Q1 C1 Q2 C2 b T1 DR1 Cf Cbus Lm a Lr Cr DR2 Q3 C3 Q4 C4 16

17 Scenario One: High Efficiency, Dual FET in parallel per Switch (SiC C2M D Vs Si SPW47N60CFD)

18 Calculation Losses Breakdown (700Vdc Input and 28A Output full SiC 2L and 135KHZ Si 3L (Dual MOS per switch) SiC Two Each Loss (W) Qty Total Loss (W) Conduc,on Switching Gate Drive Body Diode Xfrm T1 PQ60 Copper Xfrm T1 PQ60 Core Res Ind. L1 PQ35 Copper Res Ind. L1 PQ35 Core Each Item Total Loss (W) Output Diode Miscellaneous (w/fan) Target Eff. 98.1% Total Loss W Si Three- Each Loss (W) Qty Total Loss (W) Si MOS Conduc,on Si MOS Switching Si MOS Gate Drive Si MOS Body Diode Xfrm T1 PQ50 Copper Xfrm T1 PQ50 Core Res Ind. L1 PQ35 Copper Res Ind. L1 PQ35 Core Total Loss (W) Output Diode Miscellaneous (w/fan) Efficiency 97.8% Total W W 18W 6.3W 6.1W 9.9W 36.8W 15.2W 1.2W 2.72W 10.5W Conduction Switching Gate Drive Body Diode Xfrm T1 Copper Xfrm T1 Core Res Ind. L1 Copper Res Ind. L1 Core Output Diode Miscellaneous (Fan) 43.2W 5W 12W 18W 9W 15W 40W 8W 3.84W 16W MOS Conduction MOS Switching MOS Gate Drive MOS Body Diode Xfrm T1 Copper Xfrm T1 Core Res Ind. L1 Copper Res Ind. L1 Core Output Diode 18

19 Efficiency with loading with different Input Voltage (Dual MOSFET per Switch) Vin (V) Iin (A) Pin (W) Vout (V) Iout (A) Pout (W) Eff Efficiency VDC Input 650VDC Input 750VDC Input 10% 20% 30% 40% 50% 60% 70% 80% 100% Loading Note: Fan cooling the system and efficiency does not include the auxiliary power supply losses for efficiency test One 12W fan to cooling the system Yokogawa WT230 power meter is used to measure input and output current Each data is measured after 3min operation 19

20 Thermal full load with fan cooling system (Dual MOSFET per switch) Input port High Side MOS Low Side MOS Fan Main transfromer Resonant Inductor O/P Diode O/P Diode Output port Transformer Tr Resonant Inductor Lr Heatsink Output SiC Diode 20

21 Scenario Two: Low Cost, Single FET per Switch (SiC C2M D Vs Si SPW47N60CFD)

22 Calculation Losses Breakdown (700Vdc Input and 28A Output full SiC 2L and 135KHZ Si 3L (Single MOSFET per switch) SiC Two Each Loss (W) Qty Total Loss (W) Conduc,on Switching Gate Drive Body Diode Xfrm T1 PQ60 Copper Xfrm T1 PQ60 Core Res Ind. L1 PQ35 Copper Res Ind. L1 PQ35 Core Each Item Total Loss (W) Output Diode Miscellaneous (w/fan) Target Eff. 97.6% Total Loss 193.6W Si Three- Each Loss (W) Qty Total Loss (W) Si MOS Conduc,on Si MOS Switching Si MOS Gate Drive Si MOS Body Diode Xfrm T1 PQ50 Copper Xfrm T1 PQ50 Core Res Ind. L1 PQ35 Copper Res Ind. L1 PQ35 Core Total Loss (W) Output Diode Miscellaneous (w/fan) Efficiency 97.3% Total 218.8W W 6.3W 6.1W 25W 9.9W 12.8W 10.5W 2W 0.6W 77.2W Conduction Switching Gate Drive Body Diode Xfrm T1 Copper Xfrm T1 Core Res Ind. L1 Copper Res Ind. L1 Core Output Diode Miscellaneous (Fan) 43.2W 5W 12W 9W 25W 15W 15.2W 4.8W 4W 85.6W MOS Conduction MOS Switching MOS Gate Drive MOS Body Diode Xfrm T1 Copper Xfrm T1 Core Res Ind. L1 Copper Res Ind. L1 Core Output Diode Miscellaneous Fan 22

23 Efficiency with loading with different Input Voltage (Single MOSFET per switch) Vin(V) Iin (A) Pin(W) Vout(V) Iout(A) Pout(W) Eff Efficiency Input 700V Input 650V Input 750V 10% 20% 30% 40% 50% 60% 70% 80% 100% Loading Note: Fan cooling the system and efficiency does not include the auxiliary power supply losses for efficiency test Two 12W fan to cooling the system Yokogawa WT230 power meter is used to measure input and output current Each data is measured after 3min operation 23

24 Thermal full load with fan cooling system (Single MOSFET per switch) Fan Input port High Side MOS Low Side MOS Fan Main transfromer Resonant Inductor O/P Dio de O/P Dio de Outp ut port Transformer Tr Resonant Inductor Lr Heatsink Output SiC Diode 24

25 Efficiency Difference Dual MOSFET vs. Single MOSFET per 700Vdc Input 98.5% 98.0% 97.5% 97.0% 96.5% Efficiency 96.0% 95.5% 95.0% 94.5% Single MOS Per Switch 94.0% Dual MOS Per Switch 93.5% 93.0% 5% 10% 20% 30% 40% 50% 60% 70% 80% 100% Loading 25

26 Summary Reduce system complexity and lower part count with a simplified 2-Level ZVS topology. Optimize solution To Improve efficiency performance. To reduce system cost. Reduce system weight and size by designing to a higher resonant frequency. Copyright 2012, Cree Inc. 26

27 Appendix: Simplify driver Circuit for LLC Full Bridge Topology Copyright 2014 Cree Inc. 27

28 Proposed Full Bridge topology gate drive circuit Minus voltage generator for turn off The -ve voltage for turn-off is generated by charging 1uF cap across 2V zener when MOS is turned on. The MOSFET on secondary side of gate drive transformer speeds up turn off turn-off of. 1:2 gate drive transformer turns ratio allows a single 12V supply voltage for gate drive without any additional voltage supply requirements. 28

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