Power of GaN. Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies

Transcription

1 Power of GaN Enabling designers to create smaller, more efficient and higher-performing AC/DC power supplies Steve Tom Product Line Manager, GaN Products

2 Solving power and energy-management challenges How can power electronics enable higher levels of factory automation? How can we make the next generation of wearables smaller, thinner and lighter while offering more functionality? With 30KW of power per server rack in data centers today, how can we manage even more?

3 Power Technology: mapping power & frequency 1MW IGBT /GTO 100kW SiC Power 10kW 1kW Si SJ 100W 10W Si 1kHz 10kHz Frequency 100kHz 1MHz 10MHz GaN 3

4 GaN: Key Advantages Over Silicon Drain Low C G,Q G gate capacitance/charge (1 nc-ω vs Si 4 nc-ω) faster turn-on and turn-off, higher switching speed reduced gate drive losses Gate C G Q G Q RR C OSS Q OSS Low C OSS,Q OSS output capacitance/charge (5 nc-ω vs Si 25 nc-ω) faster switching, high switching frequencies reduced switching losses Low R DSON (5 mω-cm 2 vs Si >10 mω-cm 2 ) lower conduction losses Source Zero Q RR No body diode No reverse recovery losses Reduces ringing on switch node and EMI 4

5 GaN: Higher Frequency Lower Loses 5

6 LMG341x family

7 LMG3410 Driver + FET Power Stage Family Slew rate control by one external resistor: 30 V/ns to 100 V/ns Integrated direct gate driver with zero common source inductance Digital PWM input Low Inductance 8x8mm QFN Only +12V unregulated supply needed 50mΩ, 70mΩ and 150mΩ 600V GaN FET 5V OUT powers digital isolator Short-circuit protection with <100ns response time Digital fault status signal Learn More at ti.com/gan Thermal protection and UVLO

8 Benefits of the LMG3410 GaN power stage Maximum power density and efficiency Devices for every power level Simplifies design System reliability GaN power stage enables double power density and 80% lower losses than silicon MOSFET with high-speed, MHz switching frequency Fully integrated driver, FET and protection in 50 mω, 70 mω and expanding portfolio offer a single-chip solution for applications ranging from sub- 100 W to 10 kw Comprehensive portfolio of designs for AC-DC, isolated DC-DC and inverter topologies enables ease of design and faster time to market Backed by 20 million device reliability hours and features built-in intelligence for overtemperature, over-current and under voltage lockout protection View the LMG3410R070 datasheet

9 LMG341x Target Applications

10 LMG341x family: 1 MHz frequency shrinks magnetics Compared with a 100kHz silicon design, the GaN design is 6X smaller >650 Grams 100 khz transformer design 1 MHz Integrated transformer design <100 Grams

11 Maximized efficiency + power density for industrial and telecom designs The Interleaved CCM Totem Pole Bridgeless Power Factor Correction (PFC) Reference Design implements adaptive dead-time and phase shedding methods for improved efficiency (98.75% at peak) and less than 2% Total Harmonic Distortion (THD). The design features an in-built frequency response analyzer (SFRA) for verification and design of control loops. TIDM-1007 and tools folder Design guide The Highly Efficient, 1.6kW High Density GaN Based 1MHz CrM Totem-pole PFC Converter Reference Design is a high density (165 x 84 x 40 mm) design that achieves 98.7% efficiency at full load and 230-V AC input for many space constrained applications such as server, telecom, and industrial power supplies. TIDA and tools folder Design guide

12 1kW CCM Totem-Pole PFC 12

13 PFC: Applications and Topology Typical AC/DC PSU V AC 400V DC for industrial, medical, PFC LLC 12, 24, 48V DC telecomm and server applications. PFC inductor is used to regulate input current in phase with the input voltage 600V GaN half-bridge Totem-Pole PFC GaN Si GaN Line frequency Silicon MOSFET active rectifier 13

14 CCM PFC: Topologies Diode-bridge PFC Dual-boost PFC Totem-pole PFC SiC SiC GaN Si Sj Si Sj GaN Low cost Good EMI performance Moderate power density Good EMI performance Distributed heat Moderate efficiency High power density High efficiency Distributed heat Low efficiency Heat not distributed Low power density EMI performance 14

15 CCM PFC: Power Loss Comparison Switching Losses Loss Mechanism Switching FET - Conduction SiC Diode Conduction Rect Diodes / FETs I-V Overlap Losses: (I RMS x V DC x t SW x f PWM )/2 Output Charge Losses: (V DC x Q OSS x f PWM ) Reverse Recovery Losses: (V DC x Q rr x f PWM ) SEMICONDUCTOR POWER LOSSES OF PFC TOPOLOGIES Diode-bridge Boost - SJ Dual Boost - SJ Dual Boost - GaN Totem Pole - GaN 0.6 W 0.6 W 0.6W 2.06 W 3.5W 3.5W 3.5W W (Diode) 0.45 W (FET) 0.45 W (FET) 0.45 W (FET) FET E oss / SiC Diode Q oss 3.1 W 3.1 W 2.56W 2.4W I-V Overlap 1.47 W 1.47 W 0.95W 0.95W Total Losses 16.86W 9.12W 8.06W 5.86W Same heat sinking and RDSon for superjuction (SJ) and GaN - both 70mΩ Switching frequency is 100 khz. V o =400V, P o =1kW Q oss of SJ=360nC; E oss of SJ=13µJ Q oss of TI GaN=60nC; E oss of TI GaN=7.6µJ Q oss of SiC diode=65nc 15

16 Totem Pole PFC: Loss Breakdown and Efficiency Loss breakdown of 1kW PFC Loss Mechanism Power Loss EMI Inductor Loss 0.4W PFC Inductor Copper Loss 1.2W PFC Inductor Core Loss 1.64W DC Capacitor Loss 0.54W GaN Conduction Loss 1.76W GaN Q oss + Switch Node Cap Loss 2.6W GaN I-V Overlap Loss 0.9W Relay + Si FET + PCB Losses 0.95W Total Power Losses 9.98W *T amb =25 C, fs=100khz, V dc =387V Efficiency [%] % efficiency 60% to 100% load 99% 230 VAC 115 VAC fs= 100kHz Output Power (W) Note: Excludes bias losses 16

17 1.6kW Interleaved 1MHz CrM Totem-Pole PFC 17

18 TI-GaN: 1.6kW Totem-Pole CRM PFC Specifications Critical Conduction Mode LMG3410R070 Driver LMG3415 LMG3410R070 Driver LMG3415 Si FET 400VDC 400kHz-1MHz Switching Frequency Universal AC line input AC AMC1301 TLV316 LMG3410R070 Driver LMG3415 ISO7340FC LMG3410R070 Driver LMG3415 UCC27714 Si FET RTN Output Power: 1.6 KW, 390V Compact Form Factor 65 x 40 x 40 mm with power density of >250W/inch3 Features ZVS IAC_sense VAC_sense ZVS TMS320F280xx VBUS_sense 3.3V TLV70433 TIDA Full digital control using TI s Piccolo F controller Released: TIDA Efficiency: ~99% High power factor > 0.99 and less than 3% THD for 20% to full load 18 18

19 TIDA-00961: 1.6kW Totem-Pole CRM PFC 105 x 80 x 45 mm 19

20 TIDA-00961: Measured Efficiency and Thermals Thermal Image 230V-900W Without air flow! 20

21 10kw Bi-directional Grid Link Converter 21

22 >99% Efficient Grid Link with LMG3410R050 Multi-Level Converter with GaN SimpleLink Wi-Fi Power LMG3410R050 Dual-Core Delfino

23 Enabling Tomorrow s Grid Today Scalable grid solution for 10kw and beyond 5x Reduction in magnetics and 3X in power components vs silicon design 150kHz Inverter with pure sinewave output and <1% harmonics Cloud-enabled for control, telemetry and system maintenance 23

24 Target Applications Renewable Energy PV- String DC/DC MPP-Tracker DC DC/AC Grid-Inverter DC EV-Charger EV Battery DC/DC converter DC DC/AC Grid-Rectifier DC DC AC DC AC Energy Storage LV- Battery DC/DC boost conv. DC DC/AC Grid-Converter DC Grid Power Supply Load DC/DC converter DC DC/AC Grid-Rectifier DC DC AC DC AC

25 JEDEC: JC-70.1 Structure JC-70.1 Subcommittee GaN Power Electronic Conversion Semiconductor Standards Task Group TG701_1 Reliability and Qualification Procedures Task Group TG701_2 Datasheet Elements and Parameters Task Group TG701_3 Test and Characterization Methods 25

26 Summary GaN figure of merit improvements will deliver the power density and efficiency increases required in a world relying more and more on power electronics TI has recently released to the LMG3410 family to production to maximize, switching performance, reliability, protection and ease of use Applications include: <100W personal electronics chargers Multi-kW AC-DC power supply units for server, telecom and industrial, 10kW and beyond applications for 3Φ grid-link converters and beyond 26