Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs. Product Overview and Introduction Schedule

Transcription

1 Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs Product Overview and Introduction Schedule TM

2 What is MOS 8? A new generation of POWER MOS products from Microsemi Power Products Group (formerly Advanced Power Technology) New state-of-the-art technology with efficient and quiet switching and overall best value Simplified process and new manufacturing supply chain significantly lower costs Focused on high power, high voltage, high performance Power MOSFET, FREDFET, Ultrafast Recovery FREDFET, and IGBT 2

3 Markets/Applications Served by MOS 8 Market Volt Rating Welding & Plasma Cutting Induction Heating Solar Power Medical (MRI, CT & X-Ray) Semi Cap Mfg Equip Telecom & Server Power UPS High Power SMPS 1200V 1000V 900V 800V 600V 500V Legend: MOSFET FREDFET Ultrafast Recovery FREDFET IGBT 3

4 MOS 8 Features, Effects, & Benefits Features Optimized values for input and reverse transfer (Miller) capacitances Low R DS(on) / V CE(on) Low gate charge High voltage ratings Large die sizes Effects Limits peak slew rates in voltage & current during switching Maintains good drain-gate noise immunity (dv/dt induced turn-on) Low conduction loss Low switching loss Low gate drive power Allows high frequency operation at high power levels Higher power density Benefits Oscillation immunity Quiet switching reduced EMI Simple gate drive circuitry Low switching losses High efficiency, less heat generated High efficiency, high frequency capability Simple gate drive circuitry Reduces system size Reduces cost of passive components Reduces system size and part count 4

5 MOS 8 Improvements vs MOS 7 New Features Optimized oscillation immunity Reduced EMI quiet switching Ultrafast Recovery FREDFET 500V & 600V 150ns typical t rr Lower thermal resistance All products are RoHS compliant Benefits Easy paralleling, improved system reliability Simplified filtering & agency approvals Ultimate reliability for resonant (ZVS) bridge circuits Higher power density Meet new environmental standards 5

6 MOS 8 MOSFET & FREDFET MOSFETs have an intrinsic body diode that allows reverse current flow This body diode has a slow reverse recovery Slow body diode recovery leads to a reliability problem in zero-voltage switching (ZVS) circuits A FREDFET is a MOSFET with a faster recovery intrinsic body diode A FREDFET has identical switching characteristics to a MOSFET Application differences summarized below MOSFET FREDFET Pros Slightly lower R DS(on) for 800V ratings Lowest leakage current High reliability in ZVS circuits High commutation dv/dt ruggedness Can be used in any circuit Cons Not suitable for most bridge circuits Slightly increased R DS(on) for 800V ratings Higher leakage current (still very low however) MOS 8 MOSFETs and FREDFETs available starting in Sept 2006 Complete product family will be introduced by early

7 MOS 8 Ultrafast Recovery FREDFET Zero Voltage Switched (ZVS) phase shifted bridge reliability is directly related to the body diode recovery speed. (See application notes APT9803 and APT9804.) Faster recovery than FREDFET for improved ZVS reliability 500V and 600V ratings t rr ZVS reliability R DS(on) Characteristic Commutation dv/dt ruggedness ZVS frequency capability FREDFET 200ns Best Ultrafast Recovery FREDFET 150ns Best Best Best Available starting in Q4 06 7

8 MOS 8 IGBT Features & Benefits 600V and 900V ratings, wide selection of current ratings Intended for high power, high frequency applications Based on Punch-Through IGBT technology for maximum efficiency Features Lower V CE(on) versus MOS 7 Fast switching Less switching dependence on temperature Offered also as combi Benefits Lower conduction loss Higher efficiency Low switching loss High efficiency 125kHz switching frequency capability Higher system reliability No separate anti-parallel diode required Use fast, soft recovery DQ series diode Available starting in Q1 07 8

9 MOS 8 When to Use IGBT or MOSFET/FREDFET Switch Current (A) IGBT Use MOSFET/FREDFET at low current and/or high frequency Use IGBT at high current and lower frequency Some applications could use either IGBT or MOSFET/ FREDFET MOSFET/FREDFET is generally more efficient IGBT is generally lower cost MOSFET/FREDFET Switching Frequency (khz) 9

10 MOS 8 versus Competition Feature Device MOS 8 IR K and L Series Fairchild FRFET IXYS Polar Switching loss Low Low Low Low Switching noise Low Low Oscillation immunity Low Low FREDFET offering (t rr = 200ns) 500V, 600V, 800V, 1000V, 1200V 500V, 600V 500V, 600V Up to 800V Ultrafast Recovery FREDFET offering (t rr = 150ns) 500V and 600V Broadest product offering combined with best performance 10

11 MOS 8 Quiet Switching Hard-Switched Turn-Off, 500V Devices Controlled slew rates Less voltage overshoot MOS 8 Turn-Off Overshoot: 52V Less ringing Less EMI Excellent noise immunity Superior oscillation immunity Current Current Competitor A Turn-Off Overshoot: 97V Ringing Voltage Voltage Competitor B Turn-Off Overshoot: 70V Current 10 5 Ringing Voltage

12 MOS 8 Hard-Switching Applications + - Load Example: Two-switch forward. Common implementations include active clamping and flyback-forward. Simple to design short time to market The body diodes don t carry load current, so a MOSFET can be used It is OK to use a FREDFET because the switching performance is the same as for a MOSFET Ideal for hard switching due to optimized switching waveforms Peak slew rates reduced for low ringing and low EMI Overall switching time kept short for low switching loss Reliability enhanced by avalanche energy capability 12

13 MOS 8 Soft-Switching Applications + - Load Example: Phase-shifted bridge Phase shifted bridge with zero-voltage turn-on (ZVS) is highly efficient Can use FREDFETs or Ultrafast Recovery FREDFETs FREDFETs have a fast recovery body diode as required for this application Ultrafast Recovery FREDFETs trade off a slight increase in R DS(on) for even faster recovery, leading to highest reliability Fast switching and high gain ensure low switching loss Fast turn-off reduces or eliminates need for drain-source snubber capacitance for minimum switching loss and wide resonance load-bandwidth See application notes APT9803 and APT for details 13

14 MOS 8 Part Numbering System Microsemi PPG APT 38 GA 60 B D15 Current (Amps) MOSFET = I D, IGBT = I C2 M = MOSFET F = FREDFET H = Ultrafast Recovery FREDFET GA = PT IGBT IGBT with anti-parallel DQ diode Number = diode current rating Package: B = T0-247 B2 = T-Max L = T0-264 J = SOT-227 (ISOTOP ) K = T0-220 S = T0-268 (D 3 ) Voltage/10 e.g., 60 = 600V All MOS 8 Products are RoHS compliant, so there is no RoHS compliance designator in the part number. ISOTOP is a registered trademark of ST Microelectronics NV. 14

15 MOS 8 MOSFET/FREDFET Sales Strategy MOS 8 is recommended for all new designs ( 500V ratings) Expected to replace previous generation products over the next several years based on cost and performance Lowest cost option MOS 5 and MOS 7 products remain available to existing customers Upgrading to MOS 8: Match by voltage, package, and R DS(on) 15

16 MOS 8 IGBT Sales Strategy MOS 8 IGBT is recommended for all new designs where efficiency is the most important factor Will replace MOS 7 IGBTs over the next several years Lower cost than MOS 7 IGBTs MOS 7 IGBTs remain available to existing customers Upgrading to MOS 8: Match by voltage, package and I C2 ratings 16

17 Customer & Sales Support Datasheets Available at time of product availability Short form catalog: Sept 2006 Applications support Call Application notes at APT0408 IGBT Technology Overview APT0403 MOSFET Tutorial APT0302 Latest Technology PT IGBT versus Power MOSFETs APT0201 IGBT Tutorial Cross references To MOS 5 and MOS 7 generation products at end of this presentation 17

18 MOS 8 Find Datasheets 1. Go to 2. Click here 3. You will get a screen similar to this 4. Click here 18

19 MOS 8 Promotional Material Press releases 1 st MOSFET/FREDFETs: Sept 2006 Additional MOSFETs: Q4 06 Ultrafast Recovery FREDFETs: Q4 06 PT IGBTs: Q1 07 Advertising Magazines in Europe, N. America, and Asia Starting in October

20 MOSFET/FREDFET Intro Schedule 20

21 MOSFET/FREDFET Intro Schedule 21

22 MOS 8 The Best Choice Oscillation immune, quiet switching Lower cost than previous generations Low R DS(on) = low conduction loss Low gate charge = low switching loss Ultrafast Recovery FREDFETs for ultimate reliability in ZVS bridge topologies 22

23 Quiet-Switching Power MOSFETs, FREDFETs, and IGBTs TM Thank you!

24 MOS 8 Cross Reference: 500V 24

25 MOS 8 Cross Reference: 600V 25

26 MOS 8 Cross Reference: 800V 26

27 MOS 8 Cross Reference: 1000V 27

28 MOS 8 Cross Reference: 1200V 28

29 MOS 8 IGBT Cross Reference 29