Power semiconductors technology outlook
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1 Power semiconductors technology outlook Francesco Di Domenico Principal Application Engineering Infineon Technologies Austria AG November 2016
2 Content 1 HP SMPS Application Roadmap update 2 HV power semiconductors outlook 2
3 How far can the Superjunction concept be exploited in terms of RDSon*A? S G n p + p - p R DSON, max A [Ω mm 2 ] CoolMOS C3 CoolMOS CP Other 1 Si Superjunction MOSFET SiC FET GaN HEMT Si superjunction limit D. Disney, G. Dolny ISPSD 2008 Other Ωmm 2 Other 2 CoolMOS C7 0.8 Ωmm 2 n + s ub SiC and GaN devices n epi D Still a long way until the limit is reached with Si super junction. Si limit potentially lower than 0.5 Ωmm2 3
4 As a natural consequence: best RDSON/Package RDSONmax in mω RDSON/Package - D²PAK_TOLL 63 CoolMOS C7 with the best RDSON in the world CoolMOS C7 GOLD is even better 33 Infineon already have the best RDSON in D²PAK Now improved again with C7 GOLD and TOLL package with smaller footprint 10 0 Comp B Comp A C7 650V C7 600V C7 GOLD 650V Footprint 150mm² D²PAK Footprint 115mm² TOLL 4
5 CoolMOS TM Discrete roadmap CoolMOS TM 7 family within focus Existing families Roadmap Topologies Efficiency, highest frequencies Ease-ofuse C7-650V PFC High power 190 mω CP P6 C7-600V P7-600V PFC, LLC PFC, LLC CFD2 CFD7-600V ZVS, LLC C6 E6 CE Low power > 190 mω in 600V P7-600V PFC, LLC, FB 700V P7-700V FB 800V P7-800V FB 5
6 P7_600V CoolMOS - Applications Topologies Applications 1. LLC TV Server 2. PFC (CCM and DCM PFC) High end PC Power 3. Flyback Telecom Adapter value Cost/Performance series. A follower to CoolMOS P6 series Well balance in ease of use and efficiency; Rdson 17mOhm up to 600mOhm 6
7 CoolMOSP7 600V: New portfolio & waves 7
8 P7 600V features & Benefits Product Features Customer Benefits Optimized Integrated Rg Easy for customer to balance ease of use vs efficiency by controlling switching behavior using external Rg selection. Integrated ESD diode where applicable Rugged Body diode Wide RDSON portfolio including both Through Hole & SMD packages available Ensures high quality in customers manufacturing environment Same part suitable in both hard switching and soft switching topologies within the PSU i.e. PFC & LLC circuits. Suitable for many different applications both consumer & Industrial Well balanced features for Performance/Ease of Use/Price Suitable for many different applications both consumer & Industrial 8
9 600V CoolMOS CFD7 Project scope Telecom Key applications Server Topology Resonant topologies: ZVS Phase Shifted FB LLC FB/HB Higher switching frequencies to be reached Key facts Best-in-class R DS(on) offerings possible in TO and SMD packages Reduced switching losses enable improved light-load efficiency FOM R DS(on) *Q G -40% vs. CFD2 9
10 CoolMOS CFD7 Planned Portfolio Wave 1- leadproducts Wave 2a D9= Wave 2b D9= Wave 2c D9=
11 CoolMOS TM P7 800V mainly targets flyback based low power SMPS applications 250 W Single stage flyback Dual stage flyback 75 W 10 W 11
12 CoolMOS TM P7 800V delivers best-in-class performance as compared to competitors Parameter P7 Comp.1 Comp.2 C3 850 mω Best-in-class DPAK R DS(on) TO-220 FP R DS(on) [Ω] mω Best-in-class DPAK R DS(on) Q g [nc] E oss [uj] C iss [pf] mω -56% 360 mω 280 mω Customer benefits: High power density Lower BOM cost Less production cost C oss [pf] Comp.2 Comp.1 P7 P7 P7 Best-in-class efficiency and thermal performance Relative efficiency [%] Relative Temperature [ C] P7 80 W LED driver 230 V AC 80 W LED driver 230 V AC C3 0.5% efficiency gain 6 C lower MOSFET temperature 0.5% Comp.1 Comp.1 Comp.2 C3 0.3% Comp.2-6 C P7 Customer benefits: Lower standby power Better efficiency Less thermal effort Dual stage flyback V out =24-40 V, I out =2.1 A 12
13 CoolMOS TM P7 800V comes with state-of-the-art easeof-use as compared to competitors Best-in-Class CoolMOS TM quality and reliability 38 fails V GS(th) and its deviation [V] 5 Best-in--class V GS(th) and smallest V GS(th) deviation 4.5 Customer benefits > 1.6 billion parts shipped All CoolMOS TM Technologies 0.03 DPM on average Over 1.6 billion parts shipped only 38 fails ,5 Easy to drive Avoiding MOSFET linear mode operation Allowing lower driving voltage Reducing idle loss Easy to design in P7 C3 Comp.1 Comp.2 Increased design freedom due to tighter tolerance Integrated Zener Diode ESD protection ESD Protection Mechanism G I GS During ESD event: V GS is clamped by Zener Diode I GS flows through Zener Diode Thus protect gate oxide V GS S + C GS G Zener Diode D S CoolMOS TM P7 ESD Robustness HBM: Ω: Class 1C (1 2 kv ) Ω: Class 2 (2-4 kv ) CDM: Class C3 ( 1 kv) Customer Benefits Better assembling yield thus less cost Less field failure rate Higher quality and better reputation 13
14 CoolMOS TM P7 800V shows similar EMI as compared to market offers tested in a IFX 45 W adapter Conductive EMI (dbµv) Plug and play Vertical radiative EMI (dbµv/m) Horizontal radiative EMI (dbµv/m) EMI is a system level topic and optimization needs to be done on system level 14
15 CoolMOS TM P7 offers fully optimized portfolio for target applications Wave 1 In production Wave 2 QS in Q2 cy V SJ MOSFET fully optimized portfolio with 12 different R DS(on) s and 6 packages ESD class R DS(on) [mω] TO-220 FullPAK TO-252 DPAK TO-220 TO-247 TO-251 IPAK LL TO-251 IPAK SL 4500 IPD80R4K5P7 IPU80R4K5P7 1C IPD80R3K3P7 IPD80R2K4P7 IPU80R3K3P7 IPU80R2K4P7 IPS80R2K4P IPD80R2K0P7 IPU80R2K0P7 IPS80R2K0P IPA80R1K4P7 IPD80R1k4P7 IPP80R1K4P7 IPU80R1K4P7 IPS80R1K4P IPA80R1K2P7 IPD80R1K2P7 IPP80R1K2P7 IPU80R1K2P7 IPS80R1K2P7 900 IPA80R900P7 IPD80R900P7 IPP80R900P7 IPU80R900P7 IPS80R900P IPA80R750P7 IPA80R600P7 IPD80R750P7 IPD80R600P7 IPP80R750P7 IPP80R600P7 IPU80R750P7 IPU80R600P7 IPS80R750P7 IPS80R600P7 450 IPA80R450P7 IPD80R450P7 IPP80R450P7 360 IPA80R360P7 IPD80R360P7 IPP80R360P7 IPW80R360P7 280 IPA80R280P7 IPD80R280P7 IPP80R280P7 IPW80R280P7 Fine R DS(on) granularity Easy to choose right parts for fine tuning of designs 15
16 CoolMOS TM package roadmap Roadmap Product families Focus topic TO pin P6,C7 Low turn-on loss via Kelvin source Thin PAK 8 x 8 CP, P6, C7, P7 Small form factor High power TOLL G7 SMD replacement of TO247, wave solderability Double DPAK/QDPAK TO-247 max C7, P7 Topside cooling C7, P7 Lowest on-state resistance of 9 mω ThinPAK 5x6 C6, E6, P7 Small form factor Low power SOT-223 TO-220 wide-creepage CE CE/P7 Cost reduction vs. DPAK Improved creepage behavior (4 mm creepage) TO pin Thin PAK TOLL Double DPAK SOT-223 TO-220 wide-creepage 16
17 SMD packages as high performance enabler: TOLL vs. D²PAK 2.3mm 4.4mm 10.0mm 15mm 9.9mm 11.7mm Footprint: 150 mm² 30% Footprint Reduction 5nH inductance 50% Height Reduction Footprint: 115 mm² 60% Space reduction 1nH inductance 17
18 SMD packages as high performance enabler: DDPAK & QDPAK Thermal Characteristics DD-Pak TO220 QD-Pak TO247 18
19 EiceDRIVER TM IC Overview Product Roadmap for SMPS and Industrial Galvanically Isolated 1EDI-Compact Shipping 1x 4A or 10A versions Separate source / sink Isolation: Functional CMTI: 100V/ns (dyn.) 105 ns typ. prop. delay 9V UVLO 8-pin DSO (4.2 mm, 1.27 mm) 2EDI Family 2016/17 2x 4/8A peak or 2x 1/2A peak Isolation: Functional/Basic/Reinforced CMTI: > 100V/ns dyn. 55ns typ. propagation delay 4V & 8V UVLO options -10V robustness of inputs 5A reverse current robustness 16-pin DSO 150 / 300mil, 14-pin LGA Non-isolated 1EDN Family Sampling 4A source/8a sink low ohmic outputs Separate source / sink outputs 19ns typ. prop. delay (max 10ns IC2IC) 4V & 8V UVLO options -10V robustness of inputs 5A reverse current robustness 5-/6-pin SOT-23 & WSON 2EDN Family Shipping 2x 5A peak low impedance outputs 19ns typ. prop. delay (max 10ns IC2IC) 4V & 8V UVLO options - 10V robustness of inputs 5A reverse current robustness 8-pin DSO & TSSOP & WSON 1-channel Driver ICs 2-channel Driver ICs 19
20 EiceDRIVER TM IC Overview Product Roadmap for SMPS Galvanically Isolated 1EDI-Compact (IPC product) Shipping 2EDI Family In R&D 1EDN Family Sampling 2EDN Family Shipping Non-isolated SOT23-5pins SOT23-6pins WSON DSO TSSOP WSON 1-channel Driver ICs 2-channel Driver ICs Note: Packages are not drawn to scale 20
21
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