Michael de Rooij Efficient Power Conversion Corporation

Transcription

1 The egan FET Journey Continues Performance comparison using egan FETs in 6.78 MHz class E and ZVS class D Wireless Power Transfer Michael de Rooij Efficient Power Conversion Corporation EPC - The Leader in egan FETs 1

2 Agenda Why Wireless Energy Wireless Coil Overview Class E for Wireless Power Overview ZVS Class D for Wireless Power Overview Why egan FETs for Wireless Energy Transfer Device comparison Experimental performance Summary egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs 2

3 Wireless Coil-Set Overview L rp Ideal Transformer L rs L mp L ms C devs L devs L src L dev Coil Set C devp C out R DCload Z load EPC - The Leader in egan FETs 3

4 Why Wireless Energy Mobile device charging Convenience Extended battery life Medical Implants Quality of life improvement Life extender Hazardous environment systems Explosive atmosphere Corrosive locations High Voltage EPC - The Leader in egan FETs 4

5 Class E Overview Switch voltage rating 3.56 Supply (V DD ). C OSS absorbed into matching network. Susceptible to load variation - high FET losses Coil Voltage V DD [V RMS ] V DD V / I + L RFck L e C s 3.56 x V DD V DS Q 1 C sh Z load 50% I D Ideal Waveforms time EPC - The Leader in egan FETs 5

6 ZVS Voltage Mode Class D Switch voltage rating = Supply (V DD ). C OSS Voltage is transitioned by the ZVS tank ZVS tank circuit does not carry load current Coil Voltage = ½ V DD [V RMS ] + V DD Q 2 ZVS tank C s V / I V DD Q 1 L ZVS C ZVS Z load V DS I LZVS 50% EPC - The Leader in egan FETs 6 I D Ideal Waveforms time

7 Why egan FETs for Wireless Low C ISS and C OSS Zero Q RR Low R DS(on) for equal voltage rating Low profile Gate Drivers available: LM5113 LM5114 UCC27611 dv/dt immunity EPC - The Leader in egan FETs 7

8 egan FET Low Voltage Family Solder side View Gate 2.1 x 1.6 mm Substrate (Connect to Source on PWB) Drain Source Part Number Package (mm) V DS (V) V GS (V) R (mω) Q V Typ. (nc) egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs 8 Q GS Typ. (nc) Q GD Typ. (nc) R G Typ. (Ω) V th Typ. (V) EPC2015 LGA 4.1x EPC2014 LGA 1.7x EPC2001 LGA 4.1x EPC2016 LGA 2.1x EPC2007 LGA 1.7x EPC2010 LGA 3.6x EPC2012 LGA 1.7x Q RR (nc) I D (A) T J Max. ( C)

9 Ultra High Frequency egan FETs EPC Part No. BV (V) Max. R DS(ON) (mω) (V GS = 5V, Min. Peak Id (A) (Pulsed, 25 o C, I D = 0.5 A) T pulse = 300 µs) Typical Charge (pc) Q G Q GD Q GS Q OSS Q RR Typical Capacitance (pf) (V DS = 20 V; V GS = 0 V) C ISS C OSS C RSS EPC EPC EPC EPC EPC EPC EPC EPC egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs 9

10 Wireless Power Figure of Merit All topologies are ZVS: Q G Q GD only C OSS is absorbed in matching excluded Q RR ignored poorly defined & egan FETs are zero and assuming optimal operation C OSS still important: Drives off resonance losses Determines design-ability FOM R Q WPT DS(on) G Q GD EPC - The Leader in egan FETs 10

11 V GS = 5 V V GS = 10 V V GS = 5 V Figure of Merit Device Comparison FoM WPT [nc mω] SE-CE ZVS-CD EPC2012 MOSFET5 EPC8009 FOM WPT R DS(on) EPC - The Leader in egan FETs 11 Q G Q GD

12 Experimental Background Operating setup: On resonance tuned source coil Device tuning is fixed Performance testing: Fixed load, variable supply (Peak Performance) Fixed load voltage (15 V), variable DC load (20:1 ratio 10 Ω through 200 Ω) (Load Regulation) Category 3 power limited Constant Coil Current, emulates charging smart phone EPC - The Leader in egan FETs 12

13 Experimental Setup Overview Amplifiers: EPC9502 (EPC2012) Class E EPC9503 (MOSFET5) Class E EPC9029 (EPC8009) ZVS Class D Source Coil: A4WP Class 3 Compliant Device Coil: A4WP Category 3 Compliant Class 3 Source Coil Amplifier Category 3 Device EPC - The Leader in egan FETs 13

14 Class E Amplifiers EPC2012 MOSFET 5 L e = 500 nh C sh = 82 pf Underneath Coil L e = 500 nh C sh = 100 pf Underneath Coil LM5113 L RFchck = 150 µh UCC27511 L RFchck = 150 µh EPC - The Leader in egan FETs 14

15 egan FET ZVS Class D Amplifier LM5113 EPC8009 x2 Dead-time Adjust L ZVS = 500 nh C ZVS = 1 µf EPC - The Leader in egan FETs 15

16 Efficiency [%] [%] Input Voltage [V] [V] Peak Performance Results Peak Efficiency, Single load capability Variable Supply, Fixed Load Single Category 3 Power zone Two Category 3 s Power zone Class 3 Limit Class 4 Limit η ZVS-CD R DC =50 Ω η CE-2012 R DC =25 Ω η CE-FET5 R DC =25 Ω V in ZVS-CD V in CE-2012 V in CE-FET DC Load Power [W] EPC - The Leader in egan FETs 16

17 Efficiency [%] Output Power [W] Load Regulation Results Load Regulation (V out = 15 V) Class 4 Limit Class 3 Limit η ZVS-CD η CE-2012 η CE-FET5 P out Two Category 3 s Power zone Category 3 Power zone DC Load Resistance [Ω] EPC - The Leader in egan FETs 17

18 Efficiency [%] [%] Output Power [W] [W] Load Variation Results Evaluation Load profile emulating charging Smart Phone A4WP Category 3 Device η ZVS-CD η CE-2012 η CE-FET5 P out DC Load Resistance [Ω] EPC - The Leader in egan FETs 18

19 Class E Thermal Performance LM5113 EPC2012 UCC27511 MOSFET5 V DC = 30 V P out = 21.4 W R DCload = 25.3 Ω V DC = 30 V P out = 20.7 W R DCload = 25.3 Ω EPC - The Leader in egan FETs 19

20 ZVS Class D Thermal Performance LM5113 EPC8009 V DC = 38 V P out = 23.5 W R DCload = 50.3 Ω EPC - The Leader in egan FETs 20

21 Summary egan FETs are disruptive in Wireless Energy: Enable Wireless Power Yield Higher Efficiency than MOSFETs Including over a wide load range Can easily operate at 6.78 MHz Easy to use Drive new topologies e.g. ZVS Class D Growing support e.g. Gate drivers and products use them. EPC - The Leader in egan FETs 21

22 EPC - The Leader in egan FETs 22

23 Output Power [W] Evaluation Load Profile Emulates Mobile phone charging Based on ZVS class D operating with 250 ma fixed supply current into tuned source coil Max. output power set at 10 Ω DC load Resistance (assumes typical post regulator current draw) DC Load Resistance [Ω] EPC - The Leader in egan FETs 23