SGM3003 Ultra Low ON-Resistance, Low Voltage, SPDT Analog Switch

Transcription

1 GENERAL DESCRIPTION The SGM3003 is a single, low on-resistance, low voltage, bidirectional, single-pole/double-throw (SPDT) CMOS analog switch designed to operate from a single +1.8V to +5.5V supply. Targeted applications include battery powered equipment that benefit from low R ON (0.5Ω) and fast switching speeds (t ON = 21ns, t OFF = 9ns). The on resistance profile is very flat over the full analog signal range. This ensures excellent linearity and low distortion when switching audio signals. SGM3003 has one normally open switch and one normally closed switch,each switch conducts equally well in both directions when on. FEATURES Low Voltage Operation: 1.8V to 5.5V Low On-Resistance: 0.5Ω (TYP) Low On-Resistance Flatness -3dB Bandwidth: 30MHz Fast Switching Times ( = 5V) t ON 21ns t OFF 9ns Rail-to-Rail Operation Typical Power Consumption (<0.01µW) TTL/CMOS Compatible Microsize Package P CONFIGURATION (TOP VIEW) SGM3003 is available in a MSOP-8 package. APPLICATIONS Battery powered, Handheld, and Portable Equipment Cellular/mobile Phones Laptops, Notebooks, Palmtops Communication Systems Sample-and-Hold Circuits Audio Signal Routing Audio and Video Switching Portable Test and Measurement Medical Equipment SGM NO NC 2 7 N.C. V N.C. N.C. = NO CONNECT MSOP-8 FUNCTION TABLE LOGIC NC NO 0 ON OFF 1 OFF ON REV. C. 1

2 ORDERG FORMATION MODEL P- PACKAGE SPECIFIED TEMPERATURE RANGE ORDERG NUMBER PACKAGE MARKG PACKAGE OPTION SGM3003 MSOP-8-40 C to +125 C SGM3003XMS/TR SGM3003XMS Tape and Reel, 3000 ABSOLUTE MAXIMUM RATGS to V to 6V Analog, Digital voltage range (1) V to ( ) + 0.3V Continuous Current NO, NC, or...±300ma Peak Current NO, NC, or...±500ma Operating Temperature Range C to +125 C Junction Temperature C Storage Temperature C to +150 C Package Thermal T A = 25 MSOP-8, θ JA /W Lead Temperature (soldering, 10s) C ESD Susceptibility HBM V MM...400V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or or exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. P DESCRIPTION NAME P FUNCTION 4 Power supply 3 Ground 6 Digital control pin to connect the terminal to the terminals 1 Common terminal NO 8 Normally-open terminal NC 2 Normally-closed terminal N.C. 5, 7 No internal connection Note: NO, NC and terminals may be an input or output. 2

3 ELECTRICAL CHARACTERISTICS ( = +5V ± 10%, = 0V, T A = -40 C to +125 C. Typical values are at T A = + 25 C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Flatness LEAKAGE CURRENTS Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS V NO, V NC, V R ON R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) +25 SGM to +125 UNITS M/ MAX 0 V M V MAX 0, I = 10mA, 0.5 Ω TYP Test Circuit Ω MAX 0 V+, I = 10mA, 0.13 Ω TYP Test Circuit Ω MAX = 4.5V/1V, V = 1V/4.5V, ±4 na TYP = +5.5V,Test Circuit 2 ±10 ±1000 na MAX = V = 1V or 4.5V, ±4 na TYP = +5.5V, Test Circuit 3 ±10 ±1000 na MAX Input High Voltage V H 2.4 V M Input Low Voltage V L 0.8 V MAX Input Current I L or I H V = V H or V L DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Charge Injection Break-Before-Make Time Delay Off Isolation Total Harmonic Distortion t ON t OFF Q t D O ISO THD = 3V, R L = 300Ω, = 35pF, Test Circuit 4 = 3V, R L = 300Ω, = 35pF, Test Circuit 4 = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 5 V NO1 or V NC1 = V NO2 or V NC2 = 3V, R L = 300Ω, = 35pF, Test Circuit 6 ±0.01 µa TYP ±0.1 ±1 µa MAX 21 ns TYP 9 ns TYP 5 pc TYP 10 ns TYP R L = 50Ω, = 5pF, f = 100kHz -55 db TYP Test Circuit 7 f = 10kHz -75 db TYP f = 20Hz to 20kHz, V = 3.5V P-P, R L = 600Ω, = 50pF % TYP 3dB Bandwidth BW R L = 50Ω, = 5pF, Test Circuit 8 30 MHz TYP Source OFF Capacitance C NC(OFF), C NO(OFF) 82 pf TYP Channel ON Capacitance C NC(ON), C NO(ON), C (ON) 380 pf TYP POWER REQUIREMENTS Power Supply Current I + = +5.5V, V = 0V or 5V Specifications subject to changes without notice µa TYP 1 µa MAX 3

4 ELECTRICAL CHARACTERISTICS ( = +3V ± 10%, = 0V, T A = -40 C to +125 C. Typical values are at T A = + 25 C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS ANALOG SWITCH Analog Signal Range On-Resistance On-Resistance Flatness LEAKAGE CURRENTS Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS V NO, V NC, V R ON R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) +25 SGM to +125 UNITS M/ MAX 0 V M V MAX 0, I = 10mA, 0.6 Ω TYP Test Circuit Ω MAX 0 V+, I = 10mA, 0.18 Ω TYP Test Circuit Ω MAX = 3V/1V, V = 1V/3V, ±5 na TYP = +3.3V, Test Circuit 2 ±11 ±1000 na MAX = V = 1V or 3V, ±5 na TYP = +3.3V, Test Circuit 3 ±11 ±1000 na MAX Input High Voltage V H 2.0 V M Input Low Voltage V L 0.4 V MAX Input Current I L or I H V = V H or V L DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Charge Injection Break-Before-Make Time Delay Off Isolation Total Harmonic Distortion t ON t OFF Q t D O ISO THD = 2V, R L = 300Ω, = 35pF, Test Circuit 4 = 2V, R L = 300Ω, = 35pF, Test Circuit 4 = 1.0nF, V G = 0V, R G = 0Ω, Test Circuit 5 V NO1 or V NC1 = V NO2 or V NC2 = 2V, R L = 300Ω, = 35pF, Test Circuit 6 ±0.01 µa TYP ±0.1 ±1 µa MAX 32 ns TYP 20 ns TYP 10 pc TYP 12 ns TYP R L = 50Ω, = 5pF, f = 100kHz -55 db TYP Test Circuit 7 f = 10kHz -75 db TYP f = 20Hz to 20kHz, V = 2V P-P, R L = 600Ω, = 50pF 0.06 % TYP 3dB Bandwidth BW R L = 50Ω, = 5pF, Test Circuit 8 30 MHz TYP Source OFF Capacitance C NC(OFF), C NO(OFF) 82 pf TYP Channel ON Capacitance C NC(ON), C NO(ON), C (ON) 380 pf TYP POWER REQUIREMENTS Power Supply Current I + = +3.3V, V = 0V or 3V Specifications subject to changes without notice µa TYP 1 µa MAX 4

5 TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) On Response vs. Frequency V+ = +5V T A = +25 Off Isolation (db) V+ = +5V T A = +25 Off Isolation vs. Frequency Frequency (MHz) Frequency (MHz) 5

6 TEST CIRCUITS 10mA V1 R ON = V1/10mA Test Circuit 1. On Resistance I NC(OFF) or I NO(OFF) A I (ON) A V V Test Circuit 2. Off Leakage Test Circuit 3. On Leakage V 50% 50% RL 300Ω 35pF 90% 90% t ON t OFF Test Circuit 4. Switching Times R G Δ V G 1nF V ON OFF ON 0V V Test Circuit 5. Charge Injection 6

7 TEST CIRCUITS (Cont.) NC NO V 0 50% R L 300Ω 35pF 90% t D Test Circuit 6. Break-Before-Make Time Delay, t D NC NO Source Signal R L 50Ω R L 50Ω 5pF Test Circuit 7. Off Isolation Source Signal R L 50Ω 5pF Test Circuit 8. -3dB Bandwidth 7

8 PACKAGE OUTLE DIMENSIONS MSOP-8 b C L Symbol Dimensions In Millimeters Dimensions In Inches E1 E Min Max Min Max A A A b 0.30 TYP TYP e A1 θ A2 A C 0.15 TYP TYP D e 0.65 TYP TYP E E L θ D 12/2008 REV. C. 1 SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 8