SGM Ω, High Speed, Low Voltage Dual, DPDT Analog Switch

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1 GENERAL DESCRIPTION The SGM44601 is a high-speed, low-voltage, advanced dual-independent double-pole/double-throw (DPDT) CMOS analog switch that is designed to operate from a single +1.8V to +5.5V power supply. It features high-bandwidth (300MHz) and low on-resistance (4Ω TYP), targeted applications for audio switching. The SGM44601 is configured as a dual double-pole /double-throw (DPDT) device with two logic control inputs that control two multiplexer/demultiplexers each. The configuration can also be used as a dual differential 2-to-1 multiplexer/ demultiplexer. FEATURES Low Voltage Operation: 1.8V to 5.5V Low On-Resistance: 4Ω (TYP) Low On-Resistance Flatness -3dB Bandwidth: 300MHz Rail-to-Rail Input and Output Operation High Off-Isolation: -75dB at 1MHz Low Crosstalk: -100dB at 1MHz Typical Power Consumption (<0.01µW) TTL/CMOS Compatible Available in Green TQFN L Package Extended Industrial Temperature Range: -40 to +85 SGM44601 is available in Green TQFN L package. BLOCK DIAGRAM APPLICATIONS Communication Systems Cell Phones Portable Instrumentation Audio Signal Routing Audio and Video Switching PCMCIA Cards Computer Peripherals Modems PDAs 1 IN1-IN2 2 3 IN3-IN4 4 NC1 NO1 NC2 NO2 NC3 NO3 NC4 NO4 REV. A. 2

2 PACKAGE/ORDERING INFORMATION MODEL PIN- PACKAGE SPECIFIED TEMPERATURE RANGE ORDERING NUMBER PACKAGE MARKING PACKAGE OPTION SGM44601 TQFN L -40 to +85 SGM44601YTQA16/TR Tape and Reel, 3000 ABSOLUTE MAXIMUM RATINGS to...0v to 6V Analog, Digital voltage range V to () +0.3V Continuous Current NO, NC, or...±100ma Operating Temperature Range to +85 Junction Temperature Storage Temperature to +150 Lead Temperature (soldering, 10s) NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGMICRO reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SGMICRO sales office to get the last datasheet. 2

3 PIN CONFIGURATION (TOP VIEW) SGM44601YTQA16 4 NO4 IN3-IN4 NC3 NC NO3 NO NC2 NC1 IN1-IN2 NO2 2 TQFN L PIN DESCRIPTION NAME TQFN PIN FUNCTION 14 Power supply 6 Ground IN X 2,10 Digital control pin to connect the terminal to the terminals X 16,4, 8, 12 Common terminal NO X 15,3, 7, 11 Normally-open terminal NC X 1, 5, 9, 13 Normally-closed terminal NOTE: NO X, NC X and X terminals may be an input or output. FUNCTION TABLE IN1-IN2 FUNCTION NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON IN3-IN4 FUNCTION NC3 and NC4 NO3 and NO4 0 ON OFF 1 OFF ON 3

4 ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, = 0V, V IH = +1.6V, V IL = +0.5V, T A = -40 to +85. Typical values are at = +5.0V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -40 to V On-Resistance R ON = 4.5V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω On-Resistance Match Between Channels R ON = 4.5V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL INPUTS R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 4.5V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω =5.5V, V NO or V NC = 3.3V/ 0.3V, V = 0.3V/ 3.3V = 5.5V, V = 0.3V/ 3.3V, V NO or V NC = 0.3V/ 3.3V, or floating -40 to µa -40 to µa Input High Voltage V INH -40 to V Input Low Voltage V INL -40 to V Input Leakage Current I IN = 5.5V, V IN = 0V or 5.5V -40 to µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 3.0V, = 300Ω, ns Turn-Off Time = 35pF, Test Circuit ns Break-Before-Make Time Delay Charge Injection Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth Channel ON Capacitance POWER REQUIREMENTS t OFF t D Q O ISO X TALK BW C NC(ON), C NO(ON), C (ON) V NC or V NO = 3.0V, = 300Ω, = 35pF, Test Circuit4 V G =, R G = 0Ω, = 1.0nF, Q = x, Test Circuit ns pc Signal = 0dBm, = 50Ω, 1MHz Test Circuit5 10MHz Signal = 0dBm, = 50Ω, 1MHz Test Circuit6 10MHz Signal = 0dBm, = 50Ω, Test Circuit7 db db MHz pf Power Supply Range -40 to V Power Supply Current I + = 5.5V, V IN = 0V or -40 to µa 4

5 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.6V, V IL = +0.4V, T A = -40 to +85. Typical values are at = +3.0V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -40 to V On-Resistance R ON = 2.7V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω On-Resistance Match Between Channels R ON = 2.7V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL INPUTS R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 2.7V, 0V V NO or V NC, Ω I = -100mA, Test Circuit 1-40 to Ω = 3.6V, V NO or V NC = 3.3V / 0.3V, V = 0.3V/ 3.3V = 3.6V, V = 0.3V/ 3.3V, V NO or V NC = 0.3V/ 3.3V, or floating -40 to µa -40 to µa Input High Voltage V INH -40 to V Input Low Voltage V INL -40 to V Input Leakage Current I IN = 2.7V, V IN = 0V or2.7v -40 to µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 1.5V, = 300Ω, ns Turn-Off Time = 35pF, Test Circuit ns Break-Before-Make Time Delay Charge Injection Off Isolation t OFF t D Q O ISO V NC or V NO = 1.5V, = 300Ω, = 35pF, Test Circuit4 V G =, R G = 0Ω, = 1.0nF, Q = x, Test Circuit ns pc Signal = 0dBm, = 50Ω, 1MH db Test Circuit5 10MHz db Channel-to-Channel Crosstalk 3dB Bandwidth Channel ON Capacitance X TALK BW C NC(ON), C NO(ON), C (ON) Signal = 0dBm, = 50Ω, 1MHz db Test Circuit6 10MHz db Signal = 0dBm, = 50Ω, Test Circuit MHz pf 5

6 SGM44601 TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) On Response vs. Frequency = +4.2V T A = +25 On Response (db) On Response vs. Frequency = +3V T A = Frequency (MHz) Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION -80 CROSSTALK -100 = +4.2V -120 T A = Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION CROSSTALK = +3V T A = Frequency (MHz) 6

7 TEST CIRCUITS 100mA V1 V NO or V NC R ON = V1/100mA Test Circuit 1. On Resistance 0.1μF V IN 50% 50% V NO or V NC IN 300Ω 35pF 90% 90% t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF) 0.1μF R G Δ V G IN 1nF V IN ON OFF ON 0V Q = Δ V IN Test Circuit 3. Charge Injection 7

8 TEST CIRCUITS (Cont.) 0.1μF V NO or V NC NC NO V IN 0 50% IN 300Ω 35pF V NO or V NC 90% t D Test Circuit 4. Break-Before-Make Time Delay (t D) 0.1µF NC NO Source Signal 50Ω IN 50Ω 5pF Test Circuit 5. Off Isolation 0.1μF Source Signal N.C. 50Ω 5pF IN1-IN2 50Ω 5pF Channel To Channel Crosstalk = -20 log V NO or V NC Test Circuit 6. Channel-to-Channel Crosstalk 8

9 TEST CIRCUITS (Cont.) 10nF Source Signal IN 50Ω 5pF Test Circuit 7. -3dB Bandwidth 9

10 PACKAGE OUTLINE DIMENSIONS TQFN L 2.600± ± ( 15) TYP PIN #1 IDENTIFICATION CHAMFER ± Ref ± PIN #1 DOT BY MARKING TOP VIEW ± BOTTOM VIEW 0.750± Ref. SIDE VIEW NOTE: All linear dimensions are in millimeters. 10