FEATURES GENERAL DESCRIPTION PIN CONFIGURATIONS(TOP VIEW) APPLICATIONS SGM4157YD6 FUNCTION TABLE PIN DESCRIPTION 6 IN GND 5 V+ COM DFN-6 REV.
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1 SPDT 1Ω Analog Switch GENERAL DESCRIPTION The is a single Low ON-Resistance(1Ω), fast single-pole double-throw (SPDT) CMOS switch. It is designed for low operating voltage, high current switching of speaker output for cell phone applications. The can handle a balanced microphone/speaker/ringtone generator in a monophone mode. The device contains a break before make (BBM) feature. The control input,, tolerates input drive signals up to 5.5V, independent of supply voltage. is available in a DFN-6 package. FEATURES Voltage Operation : 1. 8 V to 5. 5 V On-Resistance: 0.8Ω (TYP) at 4.5V -3dB Bandwidth: 80 MHz High Off-Isolation: 60dB at 1MHz Rail-to-Rail Operation Low Static Power TTL/CMOS Compatible Break-Before-Make Switching Extended Industrial Temperature Range: 40 C to 85 C Microsize Package P CONFIGURATIONS(TOP VIEW) APPLICATIONS Portable Instrumentation Battery-Operated Equipment Computer Peripherals Cell Phones PDAs MP3s NO GND YD V+ FUNCTION TABLE LOGIC NO NC NC 3 4 DFN-6 0 OFF ON 1 ON OFF P DESCRIPTION Switches Shown For Logic 0 Input NAME P FUNCTION NO 1 Normally-open terminal GND 2 ground NC 3 Normally-closed terminal 4 Common terminal 5 Power supply 6 Digital control pin to connect the terminal to the NO or NC terminals Note: NO, NC and terminal may be an input or output. Shengbang Microelectronics Co, Ltd Tel: 86/451/ REV. B
2 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.4 V, V IL = +0.5V, T A =, Typical values are at = 3.0V, T A = + 25 C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TPY MAX UNITS ANALOG SWITCH Analog Signal Range VNO, VNC, V 0 V On-Resistance RON +25 C 1.9 Ω = 2.7V, VNO or VNC = 1.5V, I = -10 ma, Test Circuit Ω +25 C On-Resistance Match 0.45 Ω V RON + = 2.7V, VNO or VNC = 1.5V, Between Channels I = -10 ma, Test Circuit Ω On-Resistance Flatness RFLAT(ON) +25 C 0.2 Ω = 2.7V, VNO or VNC = 1.0V, 1.5V, 2.0V, I = -10 ma, Test Circuit Ω Source OFF Leakage current Channel ON Leakage current DIGITAL PUTS Input High Voltage Input Low Voltage C(OFF), O(OFF) C(ON), O(ON), I(ON) VH VL = 3.6V, VNO or VNC = 0.3V, 3.3V, V = 0.3V, 3.3V, = 3.6V, V = 0.3V, 3.3V, VNO or VNC = 0.3V, 3.3V, or floating Input Leakage Current I = +3.6V, V = 0 or 5.5V DYNAMIC CHARACTERISTICS 1 µa 1 µa 0.9 V 0.55 V µa Turn-On Time ton VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, Test Circuit 2; +25 C 28 ns V IH = 1.5V, V IL = 0V Turn-Off Time toff VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF, Test Circuit 2; V IH = 1.5V, V IL = 0V +25 C 22 ns Break-Before-Make Time VNO1 or VNC1 = VNO2 or VNC2 = 3V, td Delay RL = 300Ω, CL = 35pF, Test Circuit C 27 ns Skew tskew RS = 39Ω, CL = 50pF, Test Circuit C 9 ns RL = 50Ω, CL = 5pF, f = 10MHz +25 C -40 db Off Isolation OISO Signal = 0dBm, Test Circuit 5 f = 1MHz +25 C -60 db Bandwidth 3 db BW Signal = 0dBm, RL = 50Ω, CL = 5pF, Test Circuit C 80 MHz Source OFF Capacitance CNC(OFF), CNO(OFF) f = 1MHz +25 C 20 pf Channel ON Capacitance POWER REQUIREMENTS CNC(ON), CNO(ON), C(ON) Power Supply Range Power Supply Current I + V+ = +5.5V, V = 0V or V+ Specifications subject to change without notice. f = 1MHz +25 C 73 pf V µa 2
3 ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, V IH = +2.0 V, V IL = +0.8V, T A =, Typical values are at = 5.0V, T A = + 25 C, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TPY MAX UNITS ANALOG SWITCH Analog Signal Range VNO, VNC, V 0 V 25 C 0.8 Ω On-Resistance RON + = 4.5V, VNO or VNC = 3.5V, I = -10 ma, Test Circuit 1 2 Ω On-Resistance Match Between 25 C 0.43 Ω RON + = 4.5V, VNO or VNC = 3.5V, Channels I = -10 ma, Test Circuit Ω 25 C 0.2 Ω On-Resistance Flatness RFLAT(ON) + = 4.5V, VNO or VNC = 1.0V, 2.0V, 3.5V, I = -10 ma, Test Circuit Ω Source OFF Leakage current C(OFF), O(OFF) C(ON), O(ON), = 5.5V, VNO or VNC = 1.0V, 4.5V, V = 1.0V, 4.5V, 1 µa Channel ON Leakage current = 5.5V, V = 1.0V, 4.5V, I(ON) VNO or VNC = 1.0V, 4.5V, or floating 1 µa DIGITAL PUTS Input High Voltage VH 1.5 V Input Low Voltage VL 0.6 V Input Leakage Current I = +5.5V, V = 0 or 5.5V µa DYNAMIC CHARACTERISTICS Turn-On Time ton VNO or VNC = 3.0V, RL = 300Ω, CL = 35pF, Test Circuit 2; +25 C 20 ns V IH = 1.5V, V IL = 0V Turn-Off Time toff VNO or VNC = 3.0V, RL = 300Ω, CL = 35pF, Test Circuit 2; V IH = 1.5V, V IL = 0V +25 C 23 ns Break-Before-Make Time VNO1 or VNC1 = VNO2 or VNC2 = 3V, td Delay RL = 300Ω, CL = 35pF, Test Circuit C 23 ns Skew tskew RS = 39Ω, CL = 50pF, Test Circuit C 9.0 ns RL = 50Ω, CL = 5pF, f = 10MHz +25 C -40 db Off Isolation OISO Signal = 0dBm, Test Circuit 5 f = 1MHz +25 C -60 db Bandwidth 3 db BW Signal = 0dBm, RL = 50Ω, CL = 5pF, Test Circuit C 80 MHz Source OFF Capacitance CNC(OFF), CNO(OFF) f = 1MHz +25 C 20 pf Channel ON Capacitance POWER REQUIREMENTS CNC(ON), CNO(ON), C(ON) f = 1MHz +25 C 73 pf Power Supply Range V Power Supply Current I + V+ = +5.5V, V = 0V or V µa Specifications subject to change without notice. 3
4 ORDERG FORMATION MODEL P- PACKAGE SPECIFIED TEMPERATURE RANGE ORDERG NUMBER PACKAGE MARKG PACKAGE OPTION DFN-6 YD6/TR 4157 Tape and Reel, 3000 ABSOLUTE MAXIMUM RATGS, to GND V to +6V Analog, Digital voltage range(1) V to ( + 0.3V) Continuous Current NO, NC, or...±200ma Peak Current NO, NC, or...±300ma Operating Temperature Range... Junction Temperature C Storage Temperature C to +150 C Lead Temperature (soldering, 10s) C ESD(HBM) V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on NC, NO, or or exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 4
5 TYPICAL PERFORMANCE CHARACTERISTICS On Response vs.frequency On Response vs.frequency 3 3 = +5V T A = +25 = +3V T A = On Response(dB) -3-6 On Response(dB) Frequency(MHz) Frequency(MHz) Response vs.frequency Response vs.frequency OFF-ISOLATION 0 OFF-ISOLATION On Response(dB) On Response(dB) = +5V T A = = +3V T A = Frequency(MHz) Frequency(MHz) 5
6 TEST CIRCUITS 10mA V1 NO or NC V NO or V NC R ON = V1/10mA Test Circuit 1. On Resistance 0.1µF NO or NC V 50% 50% V NO or V NC R L 300Ω C L 35pF GND t ON t OFF Test Circuit 2. Switching Times 0.1µF V NO or V NC NC NO V 0 50% R L 300Ω C L 35pF V NO or V NC GND t D Test Circuit 3. Break-Before-Make Time Delay, td 6
7 TEST CIRCUITS (Cont.) R S NO or NC OUT Rise Time Delay = t RISE t OUTRISE Fall Time Delay = t FALL t OUTFALL Rise Time to Fall Time Mismatch = t OUTFALL t OUTRISE C L t FALL t RISE V 0V 50% 10% 10% t FALL t RISE 0V 50% 10% 10% t SKEW Test Circuit 4. Output Signal Skew 0.1µF NO or NC Source Signal C L 5pF GND Test Circuit 5. Off Isolation 7
8 TEST CIRCUITS (Cont.) 0.1µF NO or NC Source Signal C L 5pF GND Test Circuit 6. Bandwidth 8
9 PACKAGE OUTLE DIMENSIONS DFN ±0.050 N ±0.050 N ±0.050 Top View Bottom View 0.203± ± ~ ±0.100 N3 P #1 IDENTIFICATION N ± ± ±0.050 Side View NOTES: 1. All dimensions are in millimeters. 9
10 REVISION HISTORY Location Page 06/07 Data Sheet REV. A 10/07 Data Sheet changed from REV.A to REV.B Changes to TYPICAL PERFORMANCE CHARACTERISTICS Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang P.R. China Tel.: Fax:
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