SGM721 SGM722 SGM723 SGM µA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES PRODUCT DESCRIPTION. PIN CONFIGURATIONS (Top View)
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1 SGM7 SGM7 SGM73 SGM74 PRODUCT DESCRIPTION The SGM7 (single), SGM7 (dual), SGM73 (single with shutdown) and SGM74 (quad) are low noise, low voltage, and low power operational amplifiers, that can be designed into a wide range of applications. The have a high Gain- Bandwidth Product of MHz, a slew rate of 8.5V/μs, and a quiescent current of.97ma/amplifier at 5V. The SGM73 has a power-down disable feature that reduces the supply current to 6nA. The are designed to provide optimal performance in low voltage and low noise systems. They provide rail-to-rail output swing into heavy loads. The input common-mode voltage range includes ground, and the maximum input offset voltage is 4mV for. They are specified over the extended industrial temperature range ( 4 C to +5 C). The operating range is from.5v to 5.5V. The single version, SGM7 is available in SC7-5, SOT3-5 and SO-8 packages. SGM73 is available in SOT3-6 and SO-8 packages. The dual version SGM7 is available in SO-8 and MSOP-8 packages. The quad version SGM74 is available in SO-6 and TSSOP-6 packages. 97µA, MHz, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES Low Cost Rail-to-Rail Input and Output mv Typical VOS High Gain-Bandwidth Product: MHz High Slew Rate: 8.5V/µs Settling Time to.% with V Step:.36 µs Overload Recovery Time:.4µs Low Noise : 8 nv/ Hz Operates on.5 V to 5.5V Supplies Input Voltage Range = -. V to +5.6 V with VS = 5.5 V Low Power.97 ma/amplifier Typical Supply Current SGM73 6nA when Disabled Small Packaging SGM7 Available in SC7-5, SOT3-5 and SO-8 SGM7 Available in MSOP-8 and SO-8 SGM73 Available in SOT3-6 and SO-8 SGM74 Available in TSSOP-6 and SO-6 PIN CONFIGURATIONS (Top View) SGM7 SGM7/73 OUT 5 +VS NC 8 DISABLE (SGM73 ONLY) -VS -IN 7 +VS APPLICATIONS Sensors Audio Active Filters A/D Converters Communications Test Equipment Cellular and Cordless Phones Laptops and PDAs Photodiode Amplification Battery-Powered Instrumentation +IN 3 4 -IN SC7-5 / SOT3-5 OUT SGM73 73 SGM7 6 +VS -VS +IN DISABLE -IN SOT3-6 OUT A 8 +VS -IN A 7 OUT B +IN A 3 6 -IN B -VS 4 5 +IN B SO-8 / MSOP-8 +IN -VS NC = NO CONNECT SO-8 SGM74 OUT NC OUT A -IN A +IN A OUT D -IND +IND +VS +INB VS +INC -INB 6 -INC OUT B 7 OUT C NC 8 NC = NO CONNECT 9 NC TSSOP-6 / SO-6 Shengbang Microelectronics Co, Ltd Tel: 86/45/ REV. B
2 ELECTRICAL CHARACTERISTICS :V S = +5V (At TA = +5,VCM = Vs/, RL = 6Ω, unless otherwise noted) PARAMETER CONDITION MIN/MAX OVER TEMPERATURE to 7-4 to 85-4 to 5 UNITS MIN/ MAX INPUT CHARACTERISTICS Input Offset Voltage (V OS ) mv MAX Input Bias Current (I B ) pa Input Offset Current (I OS ) pa Common-Mode Voltage Range (V CM ) V S = 5.5V -. to +5.6 V Common-Mode Rejection Ratio(CMRR) V S = 5.5V, V CM = -.V to 4 V db MIN V S = 5.5V, V CM = -.V to 5.6 V db MIN Open-Loop Voltage Gain( A OL ) R L = 6Ω,Vo =.5V to 4.85V db MIN R L =KΩ,Vo =.5V to 4.95V db MIN Input Offset Voltage Drift ( V OS / T ). µv/ OUTPUT CHARACTERISTICS Output Voltage Swing from Rail R L = 6Ω. V R L = KΩ.5 V Output Current (I OUT) ma MIN Closed-Loop Output Impedance F = MHz, G = Ω POWER-DOWN DISABLE Turn-On Time. µs Turn-Off Time.8 µs DISABLE Voltage-Off.8 V MAX DISABLE Voltage-On V MIN POWER SUPPLY Operating Voltage Range V MIN V MAX Power Supply Rejection Ratio (PSRR) V s = +.5 V to V V CM = (-V S ) +.5V db MIN Quiescent Current/ Amplifier (I Q ) I OUT = ma MAX Supply Current when Disabled (SGM73 only).6 µa MAX DYNAMIC PERFORMANCE R L = 6Ω Gain-Bandwidth Product (GBP) MHz Phase Margin(φ O) 63.5 degrees Full Power Bandwidth(BW P ) <% distortion 4 KHz Slew Rate (SR) G = +, V Output Step 8.5 V/µs Settling Time to.%( t S ) G = +, V Output Step.36 µs Overload Recovery Time V IN Gain = Vs.4 µs NOISE PERFORMANCE Voltage Noise Density (e n ) f = khz 8 nv/ Hz f = khz 6.4 nv/ Hz Current Noise Density( i n ) f = khz fa/ Hz Specifications subject to change without notice.
3 PACKAGE/ORDERING INFORMATION MODEL SGM7 SGM7 SGM73 SGM74 ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION SGM7XC5/TR SC7-5 Tape and Reel, 3 7 SGM7XN5/TR SOT3-5 Tape and Reel, 3 7 SGM7XS/TR SO-8 Tape and Reel, 5 SGM7XS SGM7XMS/TR MSOP-8 Tape and Reel, 3 SGM7XMS SGM7XS/TR SO-8 Tape and Reel, 5 SGM7XS SGM73XN6/TR SOT3-6 Tape and Reel, 3 73 SGM73XS/TR SO-8 Tape and Reel, 5 SGM73XS SGM74XS/TR SO-6 Tape and Reel, 5 SGM74XS SGM74XTS TSSOP-6 Tape and Reel, 3 SGM74XTS ABSOLUTE MAXIMUM RATINGS Supply Voltage, V+ to V V Common-Mode Input Voltage... ( VS).5 V to (+VS) +.5V Storage Temperature Range to +5 Junction Temperature...6 Operating Temperature Range to +5 Package Thermal TA = 5 SC7-5, θja /W SOT3-5, θja... 9 /W SOT3-6, θja... 9 /W SO-8, θja...5 /W MSOP-8, θja... 6 /W SO-6, θja... 8 /W TSSOP-6, θja... 5 /W Lead Temperature Range (Soldering sec)...6 ESD Susceptibility HBM...5V MM...4V CAUTION This integrated circuit can be damaged by ESD. Shengbang Micro-electronics recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. NOTES. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3
4 ICAL PERFORMANCE CHARACTERISTICS At T A = +5,V CM = Vs/, R L = 6Ω, unless otherwise noted. 6 Closed-Loop Output Voltage Swing Output Impedance vs.frequency 5 Vs = 5V Output Voltage(Vp-p) 4 3 Vs = 5V V IN = 4.9V P-P T A = 5 R L = KΩ G = + Output Impedance(Ω) G = G = G = Frequency(kHz) Frequency(kHz) Positive Overload Recovery Negative Overload Recovery V V +.5V Vs = ±.5V R L = KΩ V IN = 5mV G = V V +.5V Vs = ±.5V R L = KΩ V IN = 5mV G = -5mV -5mV Time(5ns/div) Time(5ns/div) Large-Signal Step Response Vs = 5V G = + CL = pf RL = KΩ Small-Signal Step Response Vs = 5V G = + CL = pf RL = KΩ Voltage(V/div) Voltage(5mV/div) Time(5ns/div) Time(ns/div) 4
5 ICAL PERFORMANCE CHARACTERISTICS At T A = +5,V CM = Vs/, R L = 6Ω, unless otherwise noted. PSRR vs.frequency Vs = 5V CMRR vs.frequency Vs = 5V PSRR(dB) 8 6 CMRR(dB) Frequency(kHz) 4 Frequency(kHz) 7 Small-Signal Overshoot vs.load Capacitance Input Voltage Noise Spectral Density vs.frequency Small-Signal Overshoot(%) Vs = 5V R L = kω T A = 5 G = +OS -OS Voltage Noise(nV/ Hz) Vs = 5V R L = 6Ω Load Capacitance(pF) Frequency(Hz) 3 Channel Separation vs.frequency Open-Loop Gain vs.temperature Channel Separation(dB) 9 8 Vs = 5V R L = 6Ω T A = 5 G = Open Loop Gain(dB) 9 8 R L = 6Ω R L = KΩ 7. Frequency(kHz) Temperature( ) 5
6 ICAL PERFORMANCE CHARACTERISTICS At T A = +5,V CM = Vs/, R L = 6Ω, unless otherwise noted. V S = 5.5V CMRR vs.temperature V CM = -.V to 4 V 3 PSRR vs.temperature V S =.5V to 5.5V CMRR(dB) 9 8 V CM = -.V to 5.6V PSRR(dB) Temperature( ) Temperature( ).4 Supply Current vs.temperature 3 Shutdown Current vs.temperature Supply Current(mA) V S = 5V V S = 3V V S =.5V Shutdown Current(nA) V S =.5V V S = 5V V S = 3V Temperature( ) Temperature( ) Output Voltage(V) Output Voltage Swing vs.output Current V S = 5V Sourcing Current Sinking Current Output Voltage(V) 3 Output Voltage Swing vs.output Current V S = 3V Sourcing Current Sinking Current Output Current(mA) Output Current(mA) 6
7 ICAL PERFORMANCE CHARACTERISTICS At T A = +5,V CM = Vs/, R L = 6Ω, unless otherwise noted. Small-Signal Overshoot(%) Small-Signal Overshoot vs.load Capacitance Vs =.7V R L = kω T A = 5 G = +OS -OS Output Impedance(Ω) Vs =.7V Output Impedance vs.frequency G = G = G = Load Capacitance(pF) Frequency(kHz) Large-Signal Step Response Small-Signal Step Response Vs =.7V G = + CL = pf RL = KΩ Vs =.7V G = + CL = pf RL = KΩ Voltage(V/div) Voltage(5mV/div) Time(5ns/div) Time(ns/div) 3 Closed-Loop Output Voltage Swing 3 Channel Separation vs.frequency Output Voltage(Vp-p) Vs =.7V V IN =.6V P-P T A = 5 R L = KΩ G = Channel Separation(dB) 9 8 Vs =.7V R L = 6Ω T A = 5 G = Frequency(kHz) 7. Frequency(kHz) 7
8 ICAL PERFORMANCE CHARACTERISTICS At T A = +5,V CM = Vs/, R L = 6Ω, unless otherwise noted. Percent of Amplifiers(%) Offset Voltage Production Distribution Typical production distribution of packaged units Offset Voltage(mV) 8
9 APPLICATION NOTES Driving Capacitive Loads The SGM7x can directly drive 47pF in unity-gain without oscillation. The unity-gain follower (buffer) is the most sensitive configuration to capacitive loading. Direct capacitive loading reduces the phase margin of amplifiers and this results in ringing or even oscillation. Applications that require greater capacitive drive capability should use an isolation resistor between the output and the capacitive load like the circuit in Figure. The isolation resistor R ISO and the load capacitor C L form a zero to increase stability. The bigger the R ISO resistor value, the more stable V OUT will be. Note that this method results in a loss of gain accuracy because R ISO forms a voltage divider with the R LOAD. Power-Supply Bypassing and Layout The SGM7x family operates from either a single +.5V to +5.5V supply or dual ±.5V to ±.75V supplies. For single-supply operation, bypass the power supply V DD with a.µf ceramic capacitor which should be placed close to the V DD pin. For dual-supply operation, both the V DD and the V SS supplies should be bypassed to ground with separate.µf ceramic capacitors..µf tantalum capacitor can be added for better performance. Good PC board layout techniques optimize performance by decreasing the amount of stray capacitance at the op amp s inputs and output. To decrease stray capacitance, minimize trace lengths and widths by placing external components as close to the device as possible. Use surface-mount components whenever possible. SGM7 R ISO V OUT For the operational amplifier, soldering the part to the board directly is strongly recommended. Try to keep the high frequency big current loop area small to minimize the EMI (electromagnetic interfacing). V IN C L Figure. Indirectly Driving Heavy Capacitive Load V DD µf V DD µf An improvement circuit is shown in Figure. It provides DC accuracy as well as AC stability. R F provides the DC accuracy by connecting the inverting signal with the output. C F and R Iso serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier s inverting input, thereby preserving phase margin in the overall feedback loop. Vn Vp.µF SGM7 V OUT Vn Vp.µF SGM7 µf V OUT C F R F V SS (GND).µF SGM7 R ISO V OUT V SS V IN C L R L Figure 3. Amplifier with Bypass Capacitors Figure. Indirectly Driving Heavy Capacitive Load with DC Accuracy For no-buffer configuration, there are two others ways to increase the phase margin: (a) by increasing the amplifier s gain or (b) by placing a capacitor in parallel with the feedback resistor to counteract the parasitic capacitance associated with inverting node. Grounding A ground plane layer is important for SGM7x circuit design. The length of the current path speed currents in an inductive ground return will create an unwanted voltage noise. Broad ground plane areas will reduce the parasitic inductance. Input-to-Output Coupling To minimize capacitive coupling, the input and output signal traces should not be parallel. This helps reduce unwanted positive feedback. 9
10 Typical Application Circuits Differential Amplifier The circuit shown in Figure 4 performs the difference function. If the resistors ratios are equal ( R4 / R3 = R / R ), then V OUT = ( Vp Vn ) R / R + Vref. V IN R R C R SGM7 V OUT Vn Vp R R3 SGM7 V OUT R3=R//R R4 Figure 6. Low Pass Active Filter Vref Figure 4. Differential Amplifier Instrumentation Amplifier The circuit in Figure 5 performs the same function as that in Figure 4 but with the high input impedance. Vn SGM7 R R SGM7 V OUT Vp SGM7 R3 R4 Vref Figure 5. Instrumentation Amplifier Low Pass Active Filter The low pass filter shown in Figure 6 has a DC gain of (-R /R ) and the 3dB corner frequency is /πr C. Make sure the filter is within the bandwidth of the amplifier. The Large values of feedback resistors can couple with parasitic capacitance and cause undesired effects such as ringing or oscillation in high-speed amplifiers. Keep resistors value as low as possible and consistent with output loading consideration.
11 PACKAGE OUTLINE DIMENSIONS SC7-5 b D e e A A E A L L C θ. E Symbol In Millimeters In Inches Min Max Min Max A A....4 A b c D E E e.65.6 e L.55REF.REF L θ 8 8
12 PACKAGE OUTLINE DIMENSIONS SOT3-5 D b L θ. Symbol In Millimeters In Inches Min Max Min Max A A....4 E E A b c e e A L C D E E e e A A L.7REF.8REF L θ 8 8
13 PACKAGE OUTLINE DIMENSIONS SOT3-6 D e e θ. In Millimeters In Inches Symbol Min Max Min Max A L A....4 A E E b c D L E b A C E e e L.7REF.8REF A A L θ 8 8 3
14 PACKAGE OUTLINE DIMENSIONS SO-8 C L θ E E B D e A A A Symbol In Millimeters In Inches Min Max Min Max A A A B C D E E e.7.5 L θ 8 8 4
15 PACKAGE OUTLINE DIMENSIONS MSOP-8 b C E E e A L θ A A Symbol In Millimeters In Inches Min Max Min Max A A....8 A b.3. c.5.6 D e.65.6 E E L θ 6 6 D 5
16 PACKAGE OUTLINE DIMENSIONS SO-6 E E A b D e A A L C θ Symbol In Millimeters In Inches Min Max Min Max A A A b c D E E e.7 (BSC).5 (BSC) L θ 8 8 6
17 PACKAGE OUTLINE DIMENSIONS TSSOP-6 b A E PIN # IDENT. E D e L C A A H θ A Symbol In Millimeters In Inches Min Max Min Max D E b c E A..43 A A e.65 (BSC).6 (BSC) L H.5().() θ 7 7 A 7
18 REVISION HISTORY Location Page /6 Data Sheet changed from REV. A to REV. B Changes to ABSOLUTE MAXIMUM ATINGS Shengbang Microelectronics Co, Ltd Unit 3, ChuangYe Plaza No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park Harbin Development Zone Harbin, HeiLongJiang 578 P.R. China Tel.: Fax:
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