SGM8584 Single-Supply, Quad Rail-to-Rail I/O Precision Operational Amplifier

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1 PRODUCT DESCRIPTION The SGM8584 is a quad rail-to-rail input and output precision operational amplifier which has low input offset voltage, and bias current. It is guaranteed to operate from 2.5V to 5.5V single supply. The rail-to-rail input and output swings provided by the SGM8584 make both high-side and low-side sensing easy. The combination of characteristics makes the SGM8584 good choices for temperature, position and pressure sensors, medical equipment and strain gauge amplifiers, or any other 2.5V to 5.5V application requiring precision and long term stability. The SGM8584 is specified for the extended industrial/ automotive (-4 to +125 ) temperature range. The SGM8584 comes in the Green SOIC-14 and TSSOP-14 packages. FEATURES Low Offset Voltage: 25μV (TYP) Rail-to-Rail Input and Output Swing 2.5V to 5.5V Single Supply Operation Voltage Gain: 135dB (TYP) at +5V PSRR: 115dB (TYP) CMRR: 92dB (TYP) Low Input Bias Current: 6pA Low Supply Current: 43μA/Channel Overload Recovery Time: 3μs (at V S = +5V) No External Capacitors Required -4 to +125 Operating Temperature Range Available in Green SOIC-14 and TSSOP-14 Packages PIN CONFIGURATIONS (TOP VIEW) SGM8584 APPLICATIONS OUTA 1 14 OUTD Temperature Measurements Pressure Sensors Precision Current Sensing -INA +INA IND +IND Electronic Scales Strain Gage Amplifiers Medical Instrumentation +V S +INB V S +INC Thermocouple Amplifiers -INB 6 9 -INC Handheld Test Equipment OUTB 7 8 OUTC SOIC-14/TSSOP-14 REV. A. 3

2 PACKAGE/ORDERING INFORMATION MODEL ORDER NUMBER PACKAGE DESCRIPTION PACKAGE OPTION MARKING INFORMATION SGM8584 SGM8584XS14G/TR SOIC-14 Tape and Reel, 25 SGM8584XS14 SGM8584XTS14G/TR TSSOP-14 Tape and Reel, 3 SGM8584XTS14 ABSOLUTE MAXIMUM RATINGS Supply Voltage V Input Voltage V S to (+V S ) +.1V Differential Input Voltage V to 5V Storage Temperature Range to +15 Junction Temperature Operating Temperature Range to +125 Lead Temperature (Soldering 1 sec) ESD Susceptibility HBM (TSSOP-14) V HBM (SOIC-14) V MM V NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGMICRO reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SGMICRO sales office to get the latest datasheet. 2

3 ELECTRICAL CHARACTERISTICS (V S = +5V, V CM = +2.5V, V O = +2.5V, T A = +25, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (V OS) T A μv Input Bias Current (I B ) 6 pa Input Offset Current (I OS ) 5 pa Input Voltage Range 5 V Common Mode Rejection Ratio (1) (CMRR) Large Signal Voltage Gain (A VO) V CM = V to 5V T A R L = 1kΩ, V O =.3V to 4.7V T A db db Input Offset Voltage Drift (ΔV OS/Δ T) -4 T A nv/ OUTPUT CHARACTERISTICS Output Voltage High (V OH) Output Voltage Low (V OL) Short Circuit Limit (I SC) POWER SUPPLY Power Supply Rejection Ratio (1) (PSRR) Quiescent Current/Channel (I Q ) DYNAMIC PERFORMANCE R L = 1kΩ to -V S T A R L = 1kΩ to -V S T A R L = 1kΩ to +V S T A R L = 1kΩ to +V S T A V O = 2.5V, R L = 1Ω to GND T A V S = 2.5V to 5.5V T A V O = +V S / T A V V mv mv ma db μa Gain-Bandwidth Product (GBP) A V = MHz Slew Rate (SR) A V = +1, R L = 1kΩ, 2V Output Step.9 V/μs Overload Recovery Time A V = -1, R L = 1kΩ, V IN = 2mV (RET to GND).3 ms NOISE PERFORMANCE Voltage Noise (e n p-p).1hz to 1Hz 1.4 μv P-P Voltage Noise Density (e n ) f = 1kHz 78 nv/ Hz NOTE 1: PSRR and CMRR are affected by the matching between external gain-setting resistor ratios. 5

4 ELECTRICAL CHARACTERISTICS (V S = +2.5V, V CM = +1.25V, V O = +1.25V, T A = +25, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage (V OS) T A μv Input Bias Current (I B ) 3 pa Input Offset Current (I OS ) 2 pa Input Voltage Range 2.5 V Common Mode Rejection Ratio (1) (CMRR) Large Signal Voltage Gain ( A VO) V CM = V to 2.5V T A R L = 1kΩ, V O =.3V to 2.4V T A db db Input Offset Voltage Drift (ΔV OS/Δ T) -4 T A nv/ OUTPUT CHARACTERISTICS Output Voltage High (V OH) Output Voltage Low (V OL) Short Circuit Limit (I SC) POWER SUPPLY Power Supply Rejection Ratio (1) (PSRR) Quiescent Current/Channel (I Q ) DYNAMIC PERFORMANCE R L = 1kΩ to -V S T A R L = 1kΩ to -V S T A R L = 1kΩ to +V S T A R L = 1kΩ to +V S T A V O = 1.25V, R L = 1Ω to GND T A V S = 2.5V to 5.5V T A V O = +V S / T A V V mv mv ma db μa Gain-Bandwidth Product (GBP) A V = MHz Slew Rate (SR) A V = +1, R L = 1kΩ, 2V Output Step 1. V/μs Overload Recovery Time A V = -1, R L = 1kΩ, V IN = 2mV (RET to GND).2 ms NOISE PERFORMANCE Voltage Noise (e n p-p).1hz to 1Hz 1.7 μv P-P Voltage Noise Density (e n ) f = 1kHz 18 nv/ Hz NOTE 1: PSRR and CMRR are affected by the matching between external gain-setting resistor ratios. 6

5 TYPICAL PERFORMANCE CHARACTERISTICS Large Signal Transient Response at +5V Large Signal Transient Response at +2.5V V OUT (1V/div) C L = 3pF R L = 2kΩ A V = +1 V OUT (5mV/div) C L = 3pF R L = 2kΩ A V = +1 Time (5µs/div) Time (2µs/div) Small Signal Transient Response at +5V Small Signal Transient Response at +2.5V C L = 5pF C L = 5pF V OUT (5mV/div) R L = A V = +1 V OUT (5mV/div) R L = A V = +1 Time (5µs/div) Time (5µs/div) 6 Closed Loop Gain vs. Frequency at +5V 6 Closed Loop Gain vs. Frequency at +2.5V Closed Loop Gain (db) 5 4 A V = A V = -1-1 A V = Closed Loop Gain (db) 5 4 A V = A V = -1-1 A V =

6 TYPICAL PERFORMANCE CHARACTERISTICS.1Hz to 1Hz Noise at +5V.1Hz to 1Hz Noise at +2.5V Noise (2mV/div) Noise (2mV/div) A V = +1, A V = +1, Time (5s/div) Time (5s/div) Negative Overvoltage Recovery Positive Overvoltage Recovery V IN V V V SY = ±2.5V V IN = +2mV P-P (RET to GND) C L = pf R L = 1kΩ A V = -1 2mV /div 1V /div V V IN V OUT V SY = ±2.5V V IN = -2mV P-P (RET to GND) C L = pf R L = 1kΩ A V = -1 2mV /div 1V /div V OUT V Time (2µs/div) Time (2µs/div) Open Loop Gain (db) Open Loop Gain, Phase Shift vs. Frequency at +5V Phase Shift Open Loop Gain C L = pf R L = Phase Shift (Degrees) Open Loop Gain (db) Open Loop Gain, Phase Shift vs. Frequency at +2.5V Phase Shift Open Loop Gain C L = pf R L = Phase Shift (Degrees) 8

7 TYPICAL PERFORMANCE CHARACTERISTICS 1 Voltage Noise Density at +5V from.1hz to 2.5kHz 1 Voltage Noise Density at +2.5V from.1hz to 2.5kHz e n (nv/ Hz) R S = Ω e n (nv/ Hz) R S = Ω Voltage Noise Density at +5V from.1hz to 25kHz 128 Voltage Noise Density at +2.5V from.1hz to 25kHz e n (nv/ Hz) e n (nv/ Hz) R S = Ω 16 R S = Ω PSRR vs. Frequency at ±2.5V 12 PSRR vs. Frequency at ±1.25V PSRR (db) PSRR -PSRR PSRR (db) PSRR +PSRR

8 TYPICAL PERFORMANCE CHARACTERISTICS CMRR vs. Frequency at +5V CMRR vs. Frequency at +2.5V CMRR (db) 6 4 CMRR (db) Percentage of Amplifiers (%) Offset Voltage Production Distribution at +5V V S = +5V V CM = 2.5V T A = +25 Percentage of Amplifiers (%) Offset Voltage Production Distribution at +2.5V V S = +2.5V V CM = 1.25V T A = Offset Voltage (μv) Offset Voltage (μv) 1

9 PACKAGE OUTLINE DIMENSIONS SOIC-14 D INDEX Ф.8±.1 DEP.2±.1 E E1 5.2 Ф2.±.1 BTM E-MARK DEP.1± e b RECOMMENDED LAND PATTERN (Unit: mm) A A2 A3 R1 R L L1 h h A1 θ L2 Symbol Dimensions In Millimeters Dimensions In Inches MIN MOD MAX MIN MOD MAX A A A A b D E E e 1.27 BSC.5 BSC L L1 1.4 REF.4 REF L2.25 BSC.1 BSC R.7.3 R1.7.3 h θ

10 PACKAGE OUTLINE DIMENSIONS TSSOP-14 D E1 E b e RECOMMENDED LAND PATTERN (Unit: mm) L A A1 A2 θ H c Dimensions In Millimeters Dimensions In Inches Symbol MIN MAX MIN MAX A A A b c D E E e.65 BSC.26 BSC L H.25 TYP.1 TYP θ

11 TAPE AND REEL INFORMATION REEL DIMENSIONS TAPE DIMENSIONS P2 P W Q1 Q2 Q1 Q2 Q1 Q2 B Q3 Q4 Q3 Q4 Q3 Q4 Reel Diameter P1 A K Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF TAPE AND REEL Package Type Reel Diameter Reel Width W1 A B K P P1 P2 W Pin1 Quadrant SOIC Q1 TSSOP Q1 13

12 CARTON BOX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF CARTON BOX Reel Type Length Width Height Pizza/Carton