Dual, Ultralow Distortion, Ultralow Noise Op Amp AD8599

Transcription

1 Dual, Ultralow Distortion, Ultralow Noise Op Amp FEATURES Low noise: 1 nv/ Hz at 1 khz Low distortion: 5 db khz <8 nv p-p input noise,.1 Hz to Hz Slew rate: 16 V/μs Wide bandwidth: MHz Supply current: 4.7 ma/amp typical Low offset voltage: μv typical CMRR: 1 db Unity-gain stable ±15 V operation APPLICATIONS Professional audio preamplifiers ATE/precision testers Imaging systems Medical/physiological measurements Precision detectors/instruments Precision data conversion GENERAL DESCRIPTION The is a dual, very low noise, low distortion operational amplifier ideal for use as a preamplifier. The low noise of 1 nv/ Hz and low harmonic distortion of 5 db (or better) at audio bandwidths give the the wide dynamic range necessary for preamps in audio, medical, and instrumentation applications. The s excellent slew rate of 16 V/μs and PIN CONFIGURATION OUT A 1 IN A 2 +IN A 3 V 4 TOP VIEW (Not to Scale) 8 +V 7 OUT B 6 IN B 5 +IN B Figure 1. 8-Lead SOIC (R-8) MHz gain bandwidth make it highly suitable for medical applications. The low distortion and settling time of the make it ideal for buffering of high resolution data converters. The is available in an 8-Lead SOIC package and is specified over a C to +125 C temperature range Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA 62-96, U.S.A. Tel: Fax: Analog Devices, Inc. All rights reserved.

2 TABLE OF CONTENTS Features... 1 Applications... 1 Pin Configuration... 1 General Description... 1 Revision History... 2 Specifications... 3 Absolute Maximum Ratings... 4 Thermal Resistance...4 Power Sequencing...4 ESD Caution...4 Typical Performance Characteristics...5 Outline Dimensions Ordering Guide REVISION HISTORY 4/7 Rev. to Rev. A Updated Layout... 5 Changes to Figure 45 Caption Added Figure Changes to Figure 51 Caption /7 Revision : Initial Version Rev. A Page 2 of 16

3 SPECIFICATIONS VS = ±15 V, VCM = V, VO = V, TA = +25 C, unless otherwise specified. Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS 1 μv C TA +125 C 18 μv Offset Voltage Drift ΔVOS/ΔT C TA +125 C μv/ C Input Bias Current IB na C TA +125 C na Input Offset Current IOS na C TA +125 C 2 na Input Voltage Range IVR VDD = ±15 V V Common-Mode Rejection Ratio CMRR 12.5 V VCM V 1 1 db C TA +125 C 115 db Large Signal Voltage Gain AVO RL Ω, VO = 11 V to +11 V db C TA +125 C 6 db Input Capacitance CDIFF 4.8 pf CCM 4.5 pf OUTPUT CHARACTERISTICS Output Voltage High VOH RL = Ω V C TA +125 C 12.8 V RL = 2 kω V C TA +125 C 13.2 V Output Voltage Low VOL RL = Ω V C TA +125 C 12.8 V RL = 2 kω V C TA +125 C 13.3 V Output Source Circuit ISC ±52 ma Closed-Loop Output Impedance ZOUT At 1 MHz, AV = 1 5 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VDD = ±18 V to ±4.5 V 1 1 db C TA +125 C 118 db Supply Current per Amplifier ISY ma C TA +125 C 6.75 ma DYNAMIC PERFORMANCE Slew Rate SR AV = 1, RL = 2 kω 16.8 V/μs AV = 1, RL = 2 kω 15 V/μs Settling Time ts To.1%, step = V 2 μs Gain Bandwidth Product GBP MHz Phase Margin φm 68 Degrees NOISE PERFORMANCE Peak-to-Peak Noise en p-p.1 Hz to Hz 76 nv Voltage Noise Density en f = 1 khz nv/ Hz f = Hz 1.5 nv/ Hz Current Noise f = 1 khz 1.5 pa/ Hz Total Harmonic Distortion + Noise THD + N G = 1, RL 1 kω, f = 1 khz, VRMS = 3 V 8 db G = 1, RL 1 kω, f = khz, VRMS = 3 V 5 db Channel Separation CS f = khz 1 db Rev. A Page 3 of 16

4 ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage ±18 V Input Voltage GND to VDD Differential Input Voltage ±1 V Output Short-Circuit to GND Indefinite Storage Temperature Range 65 C to +1 C Operating Temperature Range C to +125 C Lead Temperature Range (Soldering sec) C Junction Temperature 1 C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE θja is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance Package Type θja θjc Unit 8-Lead SOIC (R-8) 1 36 C/W POWER SEQUENCING The op amp supplies must be established simultaneously with, or before, any input signals are applied. If this is not possible, the input current must be limited to ma. ESD CAUTION Rev. A Page 4 of 16

5 TYPICAL PERFORMANCE CHARACTERISTICS NUMBER OF AMPLIFIERS 7 MEAN = 8.23 STDEV = MIN = MAX = 62.9 NUMBER OF AMPLIFIERS MEAN =.346 STDEV =.218 MIN =. MAX = V OS (µv) Figure 2. Input Offset Voltage Distribution, VS = ±5 V TCV OS (µv) Figure 5. TCVOS Distribution, VS = ±5 V, C TA +125 C NUMBER OF AMPLIFIERS 7 MEAN = 7.91 STDEV = MIN = 63.2 MAX = 57.5 NUMBER OF AMPLIFIERS MEAN =.765 STDEV =.234 MIN =.338 MAX = V OS (µv) Figure 3. Input Offset Voltage Distribution, VS = ±15 V TCV OS (µv) Figure 6. TCVOS Distribution, VS = ±15 V, C TA +125 C V OS (µv) V S = ±15V NUMBER OF AMPLIFIERS MEAN =.342 STDEV =.221 MIN =.13 MAX = Figure 4. Input Offset Voltage vs. Temperature TCV OS (µv) Figure 7. TCVOS Distribution, VS = ±15 V, C TA +85 C Rev. A Page 5 of 16

6 NUMBER OF AMPLIFIERS MEAN =.461 STDEV =.245 MIN =.26 MAX = 1.26 V OS (µv) TCV OS (µv) Figure 8. TCVOS Distribution, VS = ±5 V, C TA +85 C V CM (V) Figure 11. Offset Voltage vs. VCM, VS = ±15 V V OS (µv) 15 V S = ±15V I B (na) V S = ±5V TIME (Minute) Figure 9. Offset Voltage vs. Time Figure 12. Input Bias Current vs. Temperature, VS = ±5 V, VCM = V V OS (µv) V CM (V) Figure. Offset Voltage vs. Common-Mode Voltage, VS = ±5 V I B (na) Figure 13. Input Bias Current vs. Temperature, VS = ±15 V, VCM = V Rev. A Page 6 of 16

7 R L = 2kΩ, V O = ±11V I OS (na) I V S = ±5V A VO (db) R L = Ω, V O = ±11V I V S = ±15V Figure 14. Input Offset Current vs. Temperature Figure 17. Large Signal Voltage Gain vs. Temperature, VS = ±15 V I B (na) T A = C T A = +25 C T A = +85 C T A = +125 C V CM (V) Figure 15. Input Bias Current vs. Voltage Common Mode; VS = ±15 V OUTPUT CURRENT (ma) 8 I SINK I SOURCE Figure 18. Output Current vs. Temperature, VS = ±5 V A VO (db) R L = Ω, V O = ±2V R L = 2kΩ, V O = ±2V OUTPUT CURRENT (ma) I SINK I SOURCE Figure 16. Large Signal Voltage Gain vs. Temperature, VS = ±5 V Figure 19. Output Current vs. Temperature, VS = ±15 V Rev. A Page 7 of 16

8 14 I SY (ma) I SY = +125 C I SY = +85 C I SY = +25 C I SY = C OUTPUT SATURATION VOLTAGE (mv) I SINK I SOURCE V SY (V) Figure. Supply Current vs. Supply Voltage I L (ma) Figure 23. Output Saturation Voltage vs. Current Load, VS = ±15 V I SY (ma) I SY ±15V I SY ±5V OUTPUT SATURATION VOLTAGE (mv) V DD V OH Figure 21. Supply Current vs. Temperature OUTPUT LOAD (Ω) Figure 24. Output Saturation Voltage vs. RL, VS = ±5 V OUTPUT SATURATION VOLTAGE (mv) I SINK I SOURCE OUTPUT SATURATION VOLTAGE (mv) V EE V OL I L (ma) Figure 22. Output Saturation Voltage vs. Current Load, VS = ±5 V OUTPUT LOAD (Ω) Figure 25. Output Saturation Voltage vs. RL, VS = ±5 V Rev. A Page 8 of 16

9 OUTPUT SATURATION VOLTAGE (mv) V DD V OH V EE V OL (V) V EE V R L = 2kΩ V EE V R L = Ω OUTPUT LOAD (Ω) Figure 26. Output Saturation Voltage vs. RL, VS = ±15 V Figure 29. Output Saturation Voltage vs. Temperature, VS = ±5 V OUTPUT SATURATION VOLTAGE (mv) V EE V OL V CC V OH (V) V CC V R L = Ω V CC V R L = 2kΩ OUTPUT LOAD (Ω) Figure 27. Output Saturation Voltage vs. RL, VS = ±15 V Figure. Output Saturation Voltage vs. Temperature, VS = ±15 V V CC V OH (V) V CC V R L = Ω V CC V R L = 2kΩ V EE V OL (V) V EE V R L = 2kΩ.5 2. V EE V R L = Ω Figure 28. Output Saturation Voltage vs. Temperature, VS = ±5 V Figure 31. Output Saturation Voltage vs. Temperature, VS = ±15 V Rev. A Page 9 of 16

10 PHASE (Degrees) 8 V OH (V) V R L = Ω V R L = 2kΩ GAIN (db) GAIN (db) PHASE (Degrees) Figure 32. Output Voltage High vs. Temperature, VS = ±15 V k k k 1M M M Figure 35. Gain and Phase vs. Frequency, ±5 V VS ±15 V V R L = Ω GAIN = V OL (V) V R L = 2kΩ CLOSED-LOOP GAIN (db) GAIN = GAIN = Figure 33. Output Voltage Low vs. Temperature, VS = ±15 V k k k 1M M M Figure 36. Closed-Loop Gain vs. Frequency, ±5 V VS ±15 V MAXIMUM OUTPUT SWING (V p-p) V S = ±15V V S = ±5V Z OUT (Ω) GAIN = GAIN = GAIN = 1 1 FREQUENCY (khz) Figure 34. Maximum Output Swing vs. Frequency k k k 1M M M Figure 37. Closed-Loop Output Impedance vs. Frequency, ±5 V VS ±15 V Rev. A Page of 16

11 CMRR (db) CMRR V S = ±5V (db) CMRR V S = ±15V (db) NUMBER OF AMPLIFIERS MEAN = 1.7 STDEV =.2 MIN = 1.5 MAX = k k k 1M M M Figure 38. Common-Mode Rejection Ratio vs. Frequency VOLTAGE NOISE DENSITY (nv/ Hz) Figure 41. Voltage Noise 1 khz, ±5 V VS ±15 V PSRR (db) 1 8 PSRR+ (db) PSRR (db) VOLTAGE NOISE DENSITY (nv/ Hz) 1 1k k k 1M M Figure 39. Power Supply Rejection Ratio vs. Frequency, ±5 V VS ±15 V Figure 42. Voltage Noise Density vs. Frequency, ±5 V VS ±15 V NUMBER OF AMPLIFIERS MEAN = 1. STDEV =.9 MIN = 1.1 MAX = 1.5 CURRTENT NOISE DENSITY (pa/ Hz) VOLTAGE NOISE DENSITY (nv/ Hz) Figure. Voltage Noise khz, ±5 V VS ±15 V Figure 43. Current Noise Density vs. Frequency, ±5 V VS ±15 V Rev. A Page 11 of 16

12 .1 15 THD + N (%).1.1 R L = Ω R L = 2kΩ AMPLITUDE (V) V S = ±15V V IN = V p-p A V = 1 R F = 1kΩ R L = 2kΩ VERTICAL AXIS = 5V/DIV HORIZONTAL AXIS = 4µs/DIV.1 Figure 44. Total Harmonic Distortion + Noise vs. Frequency, VS = ±15 V, VIN = 3 V rms TIME (µs) Figure 47. Large Signal Response, AV = V IN = 3V rms V IN = 5V rms V IN = 7V rms 15 THD + N (%).1.1 AMPLITUDE (V) V S = ±15V V IN = V p-p A V = 1 R F = 2kΩ R S = 2kΩ C L = pf VERTICAL AXIS = 5V/DIV HORIZONTAL AXIS = 4µs/DIV.1 Figure 45. Total Harmonic Distortion + Noise vs. Frequency, VS = ±15 V TIME (µs) Figure 48. Large Signal Response, AV = AMPLITUDE (mv) V S = ±15V, ±5V V IN = mv p-p A V = 1 EXTERNAL C L = pf EXTERNAL R L = kω VERTICAL AXIS = mv/div HORIZONTAL AXIS = ns/div TIME (ns) Figure 46. Small Signal Response OVERSHOOT (%) CAPACITANCE (pf) Figure 49. Overshoot vs. Capacitance, ±5 V VS ±15 V, AV = 1, RL = kω Rev. A Page 12 of 16

13 V IN = V p-p V IN = V p-p 8 CHANNEL SEPARATION (db) AMPLITUDE (mv) 1 Figure. Channel Separation vs. Frequency, VS = ±15 V, AV =, RL = 1 kω TIME (Seconds) Figure 51. Peak-to-Peak Noise, ±5 V VS ±15 V, AV = 1 M Rev. A Page 13 of 16

14 OUTLINE DIMENSIONS 5. (.1968) 4.8 (.189) 4. (.1574) 3.8 (.1497) (.2441) 5.8 (.2284).25 (.98). (.) COPLANARITY. SEATING PLANE 1.27 (.) BSC 1.75 (.688) 1.35 (.532).51 (.1).31 (.122) 8.25 (.98).17 (.67). (.196).25 (.99) 1.27 (.). (.157) 45 COMPLIANT TO JEDEC STANDARDS MS-12-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model Temperature Range Package Description Package Option ARZ 1 C to +125 C 8-Lead Standard Small Outline Package [SOIC_N] R-8 ARZ-REEL 1 C to +125 C 8-Lead Standard Small Outline Package [SOIC_N] R-8 ARZ-REEL7 1 C to +125 C 8-Lead Standard Small Outline Package [SOIC_N] R-8 1 Z = RoHS Compliant Part. 127-A Rev. A Page 14 of 16

15 NOTES Rev. A Page 15 of 16

16 NOTES 7 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /7(A) Rev. A Page 16 of 16