SGM Ω, 300MHz, Low-Power Full-Speed USB (12Mbps) Switch
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1 GENERAL ESCRIPTION The SGM2258 is a high-performance, dual, single-pole/ double-throw (SPT) CMOS analog switch designed for switching USB 1.1 signals. High bandwidth and low on-resistance make this switch able to pass both USB low and full-speed signal with minimum signal distortion. The SGM2258 features guaranteed on-resistance matching (.3Ω TYP) between switches and guaranteed on-resistance flatness over the signal range (2Ω TYP). This ensures excellent linearity and low distortion when switching signals. The device is fabricated with sub-micron CMOS technology to achieve fast switching speeds and designed for break-before-make operation. The select input is TTL-level compatible. SGM2258 is available in Green TQFN L package. It operates over an ambient temperature range of -4 to +85. FEATURES Operation Voltage: +1.8V to +5.5V On-Resistance: 4.5Ω (TYP) at +4.5V High Bandwidth: 3MHz Switching Times: t ON 7ns t OFF 2ns High Off-Isolation: -51dB at 1MHz Low Crosstalk: -67dB at 1MHz Rail-to-Rail Operation TTL/CMOS Compatible Break-Before-Make Switching Extended Industrial Temperature Range: -4 to +85 Available in Green TQFN L Package APPLICATIONS Routes Signals for USB 1.1 Portable Instrumentation Battery-Operated Equipment Computer Peripherals Cell Phones PAs MP3s REV. A. 2
2 PACKAGE/ORERING INFORMATION MOEL PIN- PACKAGE SPECIFIE TEMPERATURE RANGE ORERING NUMBER PACKAGE MARKING PACKAGE OPTION SGM2258 TQFN L -4 to +85 SGM2258YTQ1/TR 2258 Tape and Reel, 3 ABSOLUTE MAXIMUM RATINGS, IN to V to 6V Analog, igital voltage range (1) V to () +.3V Continuous Current 1, 2, or... ±1mA Operating Temperature Range to +85 Junction Temperature Storage Temperature Range to +15 Lead Temperature (soldering, 1s) ES Susceptibility MM...4V NOTES: 1. Signals on 1, 2, or S exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN CONFIGURATION (TOP VIEW) 1- S CAUTION This integrated circuit can be damaged by ES if you don t pay attention to ES protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ES damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SGMICRO reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SGMICRO sales office to get the latest datasheet. FUNCTION TABLE S 2-, 2+ 1-, 1+ OFF ON 1 ON OFF Switches Shown For Logic Input 1 5 PIN ESCRIPTION S TQFN L PIN NAME FUNCTION 5 Power Supply. 1 Ground. 8, 2 S1, S2 Select Input. 7, 3 -, + Common Output/ata Port. 6, 4 2-, 2+ ata Port (Normally Open). 9, 1 1-, 1+ ata Port (Normally Closed). 2
3 ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, V IH = +1.6V, V IL = +.5V, T A = -4 to +85. Typical values are at = +5.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range (1+, 1-, 2+, 2-) On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source Off Leakage Current Channel On Leakage Current IGITAL INPUTS V IS -4 to +85 V R ON R ON R FLAT(ON) I 2(OFF), I 1(OFF) I 2(ON), I 1(ON) = 4.5V, V V IS, I = -1mA, Test Circuit 1 = 4.5V, V V IS, I = -1mA, Test Circuit 1 = 4.5V, V V IS, I = -1mA, Test Circuit 1 = 5.5V, V IS = 3.3V/.3V, V =.3V/ 3.3V = 5.5V, V IS =.3V/3.3V, V =.3V/3.3V or floating Ω -4 to Ω Ω -4 to Ω Ω -4 to Ω -4 to μa -4 to μa Input High Voltage V INH -4 to V Input Low Voltage V INL -4 to V Input Leakage Current I IN = 5.5V, V S = V or 5.5V -4 to μa YNAMIC CHARACTERISTICS Turn-On Time t ON = 4.2V, V IS = 3.V, ns Turn-Off Time t OFF = 5Ω, C L = 35pF, Test Circuit ns Break-Before-Make Time elay Charge Injection t Q = 4.2V, V IS = 3.V, = 5Ω, C L = 35pF, Test Circuit 3 = 4.2V, V G =, R G = Ω, C L = 1.nF, Q = C L, Test Circuit ns pc Channel On Capacitance C ON pf Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth POWER REQUIREMENTS O ISO X TALK BW = 4.2V, Signal = dbm, = 5Ω, Test Circuit 5 = 4.2V, Signal = dbm, = 5Ω, Test Circuit 6 = 4.2V, Signal = dbm, = 5Ω, Test Circuit 7 f = 1MHz db f = 1MHz db f = 1MHz db f = 1MHz db MHz Power Supply Range -4 to V Power Supply Current I + = 5.5V, V IN = V or -4 to μa 3
4 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.5V, V IL = +.4V, T A = -4 to +85. Typical values are at = +3.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range (1+, 1-, 2+, 2-) On-Resistance On-Resistance Match Between Channels On-Resistance Flatness Source Off Leakage Current Channel On Leakage Current IGITAL INPUTS V IS -4 to +85 V R ON R ON R FLAT(ON) I 2(OFF), I 1(OFF) I 2(ON), I 1(ON) = 2.7V, V V IS, I = -1mA, Test Circuit 1 = 2.7V, V V IS, I = -1mA, Test Circuit 1 =2.7V, V V IS, I = -1mA, Test Circuit 1 = 3.6V, V IS = 3.3V/.3V, V =.3V/3.3V = 3.6V, V =.3V/3.3V, V IS =.3V/3.3V or floating Ω -4 to Ω Ω -4 to Ω Ω -4 to Ω -4 to μa -4 to μa Input High Voltage V INH -4 to V Input Low Voltage V INL -4 to V Input Leakage Current I IN = 2.7V, V S = V or 2.7V -4 to μa YNAMIC CHARACTERISTICS Turn-On Time t ON V IS = 1.5V, = 5Ω, ns Turn-Off Time t OFF C L = 35pF, Test Circuit ns Break-Before-Make Time elay Charge Injection t Q V IS = 1.5V, = 5Ω, C L = 35pF, Test Circuit 3 V G =, R G = Ω, C L = 1.nF, Q = C L, Test Circuit ns pc Channel On Capacitance C ON pf Off Isolation Channel-to-Channel Crosstalk -3dB Bandwidth O ISO X TALK BW Signal = dbm, = 5Ω, Test Circuit 5 Signal = dbm, = 5Ω, Test Circuit 6 Signal = dbm, = 5Ω, Test Circuit 7 f = 1MHz db f = 1MHz db f = 1MHz db f = 1MHz db MHz 4
5 TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) On Response vs. Frequency = +3.V T A = +25 On Response (db) On Response vs. Frequency = +4.2V T A = Frequency (MHz) Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION CROSSTALK = +3.V T A = Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION -1 = +4.2V CROSSTALK -12 T A = Frequency (MHz) 5
6 TEST CIRCUITS 1mA V1 1 or 2 R ON = V1/1mA Test Circuit 1. On Resistance.1μF V S 1 2 C L V OH 5% 5% 9% 9% V OL t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF) 1 5% V S.1μF 2 C L 9% of V OH V S t Test Circuit 3. Break-Before-Make Time elay (t ) 6
7 TEST CIRCUITS (Cont.) 1 V G R G S 2 C L ΔOUT Q = Δ C L Test Circuit 4. Charge Injection.1μF 1 2 Source Signal S Test Circuit 5. Off Isolation.1μF 1- or 2- - Source Signal S1 S2 N.C. 1+ or 2+ + Channel To Channel Crosstalk = -2 log V IS Test Circuit 6. Channel-to-Channel Crosstalk 7
8 TEST CIRCUITS (Cont.).1μF 1 or 2 Source Signal S Test Circuit 7. -3dB Bandwidth 8
9 PACKAGE INFORMATION PACKAGE OUTLINE IMENSIONS TQFN L 2.1±.5.2±.5.5 Bsc 1.6±.5.4±.5 N1.15 N1.8 TOP VIEW BOTTOM VIEW ± Ref.7 SIE VIEW RECOMMENE LAN PATTERN NOTE: All linear dimensions are in millimeters. TX76.1
10 PACKAGE INFORMATION TAPE AN REEL INFORMATION REEL IMENSIONS TAPE IMENSIONS P2 P W Q1 Q2 Q1 Q2 Q1 Q2 B Q3 Q4 Q3 Q4 Q3 Q4 Reel iameter P1 A K Reel Width (W1) IRECTION OF FEE NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETEIST OF TAPE AN REEL Package Type Reel iameter Reel Width W1 A B K P P1 P2 W Pin1 Quadrant TQFN L Q1 1 TX1.
11 PACKAGE INFORMATION CARTON BOX IMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETEIST OF CARTON BOX Reel Type Length Width Height Pizza/Carton 7 (Option) TX2.
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