WAS4732D WAS4732D. Descriptions. Features. Order information. Applications. MIC/GND Cross-point Switch for EU/US Headphone Compatible Application

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1 / Cross-point Switch for EU/US Headphone Compatible Application Descriptions The is a 2x2 cross-point switch that is used to interchange the Ground and connections on a headphone connector. The Ground switch has an ultra-low Ron of 0.1 Ω (typical) to minimize voltage drop across it, preventing undesired increase in headphone ground reference voltage. the switch state is controlled via the input. When =High, is connected to and is connected to ; When =Low, is connected to and is connected to. An internal pull-down 2MΩ resistor on input sets the default state of the switch. The is available in DFN2x2-6L package. Standard product is Pb-Free and halogen-free. Features Supply voltage : 2.3 ~ 5.0V ultra-low Ron for Switch : 100mΩ low Ron for Switch : 4.5 Ω Break-Before-Make Switching Low quiescent current over an Expanded Control Range ESD Rating (HBM JEDEC: JESD22-A114) IO to Power to : ± 8KV : ± 5KV Replace TS3A26746E with compatible PCB Layout Applications Cell phone Tablet Others Music Players 1 2 DFN2x2-6L 3 4 Pin configuration (Top view) = Device code ** = Year & Week (A~Z) Marking Order information DA ** Device Package Shipping -6/TR DFN2x2-6L 3000/Reel&Tape Will Semiconductor Ltd. 1 Feb, Rev. 1.0

2 Pin descriptions Pin Number Symbol Descriptions 1 Logic Control 2 Port 3 Ground 4,5 COM X Audio Signal Port 6 Positive Power Supply Function descriptions Logic () Function 0 is connected to and is connected to 1 is connected to and is connected to Functional Block MΩ 1 Typical Applications Audio Jack Bias VBAT L R Audio Band / / GPIO 2MΩ Will Semiconductor Ltd. 2 Feb, Rev. 1.0

3 Absolute Maximum Ratings (1) Parameter Symbol Value Unit Supply Voltage V CC -0.3 ~ 6.5 V Control Voltage VIN X -0.3 ~ 6.5 V DC Voltage (2) V INPUT -0.3 ~ 6.5 V Continuous Current through COMx ± 100 ma Storage Temperature Range T STG -65 ~ 150 Junction Temperature under Bias T J 150 Lead Temperature (Soldering, 10 seconds) T L 260 Power Dissipation P D 250 mw Recommend operating ratings (3) Parameter Symbol Value Unit Supply Voltage Operating V CC 2.3 ~ 5.0 V Control Voltage V IN 0.0 ~ V CC V Signal Voltage V IS 0.0 ~ V CC V Operating Temperature T A -40 ~ 85 Raise and Fall Time(Control V CC =2.3~3.6V) t r,t f 0 ~ 10 ns/v Thermal Resistance R θja 350 /W Note: 1. Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. 2. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed. 3. Control input must be held high or Low, it must not float. Will Semiconductor Ltd. 3 Feb, Rev. 1.0

4 DC Electronics Characteristics (Ta=25, =3.6V, unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit logic high level logic low level Supply quiescent current Increase in I CC per input V IH V IL I CC I CCT : 3.0 ~ V : 2.3 ~ V : 3.0 ~ V : 2.3 ~ V I OUT =0, V IN =0 or V IN = 1.0 ua I OUT =0, =4.5 V IN >1.8 or V IN < ua leakage current I IN V = 2.0 ua Off state switch leakage current I OFF ±1.0 ua On state switch leakage current I ON ±1.0 ua =2.8V, path On-Resistance path On-Resistance match path On-Resistance flatness path On-Resistance path On-Resistance match path On-Resistance flatness R ON1 V SW = 0 ~ 1V 0.1 Ω =2.8V, R ON1 V SW = 0 ~ 1V 0.02 Ω =2.8V, R FLAT1(ON) R ON2 V SW = 0 ~ 1V 0.02 Ω =2.8V, V SW = 0 ~1.8V 4.5 Ω =2.8V, R ON2 V SW = 0 ~ 0.5 Ω =2.8V, R FLAT2(ON) V SW = 0 ~1.8V 1.5 Ω Will Semiconductor Ltd. 4 Feb, Rev. 1.0

5 AC Electronics Characteristics (Ta=25, =3.6V, unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Turn-On Time T ON V IS =1.5V, C L =35pF, R L =50Ω Turn-Off Time T OFF V IS =1.5V, C L =35pF, R L =50Ω Break-Before-Make time T BBM V IS =1.5V, C L =35pF, R L =50Ω 150 ns 150 ns 800 ns -3dB Bandwidth BW R L =50Ω, C L =0pF 30 MHz Off isolation Crosstalk Total Harmonic Distortion () OIRR Xtalk THD F=1KHz, R L =50Ω -50 db F=10KHz, R L =50Ω -50 db F=1KHz, R L =50Ω -50 db F=10KHz, R L =50Ω -50 db F=20Hz to 20KHz R L =1KΩ,V IS =30mVpp 0.01 % Capacitance (Ta=25 unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Off capacitance C OFF F=100KHz, = pf On capacitance C ON F=100KHz, = pf Will Semiconductor Ltd. 5 Feb, Rev. 1.0

6 Test Circuits V V IH V IL 50% V IS COMx / V O I O 0V T ON T OFF 90% 90% Ron = V / I O ON-Resistance (R ON ) ON/OFF Time Waveforms (T ON / T OFF ) Network analyzer Network analyzer Crosstalk (Xtalk) Off isolation (OIRR) Network analyzer Audio analyzer CL Bandwidth (BW) THD+N Will Semiconductor Ltd. 6 Feb, Rev. 1.0

7 Package Information DFN2x2-6L Symbol Dimensions in millimeter Min. Typ. Max. A A D E b c e 0.65 BSC. Nd 1.30 BSC. L h Will Semiconductor Ltd. 7 Feb, Rev. 1.0