NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability
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1 DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NS5S1153 is a DPDT switch for combined true ground audio and USB 2.0 high speed data applications. It allows portable systems to use a single port to pass either USB data or audio signals from an external headset. The switch is capable of passing signals with negative voltages as low as 2 V below ground. The NS5S1153 is also equipped with V BUS detection circuitry to immediately switch to USB mode in the event that a voltage is detected on V BUS. The NS5S1153 features shunt resistors on the audio ports. These resistors are switched in when the audio channel is off and provide a safe path to ground for any charge that may build up on the audio lines. This reduces Pop & Click noise in the audio system. The device has an extended range which can operate off up to V while passing true ground audio signals down to 2 V. Features Low R ON Audio /Data DPDT Switch Capable of Passing Negative Swing Signals Down to 2 V 1.8 V Compatible Control Pin for V V High USB Path Bandwidth (>900 MHz) V BUS Detection Circuitry for Automatic Switching Between Audio and USB Modes Audio Channel Shunt Resistors for Pop & Click Noise Reduction Ultra Low THD in Audio Mode: 0.01% into 16 Load 5.25 V Tolerant Common Pins This is a Pb Free Device 1 AJ M UQFN10 CASE 488AT = Specific Device Code = Date Code = Pb Free Package MARKING DIAGRAMS AJM (Note: Microdot may be in either location) Device Package Shipping NS5S1153MUTAG ORDERING INFORMATION UQFN10 (Pb Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Applications Shared USB/Audio Connector Mobile Phones Portable Devices NS5S1153 USB/Audio Connector V BUS_CTRL COM+ COM D+ D R USB XCVR GND L Audio Amp Figure 1. Application Diagram Semiconductor Components Industries, LLC, 2009 December, 2009 Rev. 0 1 Publication Order Number: NS5S1153/D
2 COM+ COM- 7 6 ASel 8 5 Control Logic V BUS_CTRL 9 V BUS Detect 4 GND V BUS_PD D L 1 2 D- Figure 2. Functional Block Diagram (Top View) R PIN DESCRIPTIONS Pin # Name Direction Description 1 D I/O Negative Data Line for USB Signals 2 R I/O Right Line for Audio Signals 3 L I/O Left Line for Audio Signals 4 GND Power Ground 5 Power Power Supply 6 COM I/O Left Audio / Negative Data Common Line 7 COM+ I/O Right Audio / Positive Data Common Line 8 A SEL Control Override Select Line 9 V BUS_CTRL Control Select Line from V BUS 10 D+ I/O Positive Data Line for USB Signals TRUTH TABLE A SEL V BUS L, R D+, D L, R SHUNT Low Low ON OFF OFF Low High OFF ON ON High X ON OFF OFF 2
3 OPERATING CONDITIONS MAXIMUM RATINGS Symbol Pins Parameter Value Unit Positive DC Supply Voltage 0.5 to +6.0 V V BUS V BUS_CTRL V BUS Control Voltage 0.5 to +6.0 V V IS Analog Signal Voltage 0.5 to +6.0 V 2.5 to V IS COM+, COM DC Signal Voltage Tolerance (<24 hours) 5.25 V V IN ASel Control Override Voltage 0.5 to +6.0 V I CC Positive DC Supply Current 50 ma T S Storage Temperature 65 to +150 C I IS_CON I IS_PK COM+, COM R, L, D+, D COM+, COM R, L, D+, D Analog Signal Continuous Current Closed Switch 100 ma Analog Signal Continuous Current 10% Duty Cycle 500 ma I IN ASel Control Override Current 1 ma V BUS_CTRL VBUS Control Current 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol Pins Parameter Min Max Unit Positive DC Supply Voltage 5.0 V V BUS V BUS_CTRL V BUS Control Voltage GND 5.25 V V IS Analog Signal Voltage (Note 1) GND V 2.0 V IN ASel Control Override Voltage GND V T A Operating Temperature C Minimum and maximum values are guaranteed through test or design across the Recommended Operating Conditions, where applicable. Typical values are listed for guidance only and are based on the particular conditions listed for section, where applicable. These conditions are valid for all values found in the characteristics tables unless otherwise specified in the test conditions. 1. In USB mode, any signal applied to the off state audio inputs R, L may not swing below ground or above 1.5 V. 3
4 DC ELECTRICAL CHARACTERISTICS CONTROL INPUT (Typical: T = 25 C, = V) 40 C to +85 C Symbol Pins Parameter Test Conditions (V) Min Typ Max Unit V IH A SEL Control HIGH Voltage 1.3 V V IL A SEL Control LOW Voltage 0.4 V I IN A SEL Current Leakage Current 0 V IS ±50 na V IH V BUS_CTRL V BUS Control HIGH V Voltage V IL V BUS_CTRL V BUS Control LOW Voltage I IN V BUS_CTRL V BUS Current Leakage Current SUPPLY CURRENT AND LEAKAGE (Typical: T = 25 C, = V) V IS ±25 A 40 C to +85 C Symbol Pins Parameter Test Conditions (V) Min Typ Max Unit I NC,NO(OFF) D+, D OFF State Leakage V BUS_CTRL = 0 V, V; ±80 na V COM, V COM+ = 0 V, V V D+, V D = V, 0 V or float V L, V R = float or V, 0 V I COM(ON) COM, ON State Leakage V BUS_CTRL = 0 V, V; ±100 na COM+ V COM, V COM+ = 0 V, V V D+, V D = V, 0 V or float V L, V R = float or V, 0 V I CC Quiescent Supply V IS = GND to ; I D = 0 A A I OFF COM, Power OFF Leakage 0 V IS V 0 50 A COM+ USB ON RESISTANCE (Typical: T = 25 C, = V) 40 C to +85 C V Symbol Pins Parameter Test Conditions (V) R ON On Resistance V IS = 0 V to R FLAT R ON On Resistance Flatness On Resistance Matching AUDIO ON RESISTANCE (Typical: T = 25 C, = V) V IS = 0 V to V IS = 0 V to Min Typ Max C to +85 C 5.5 Unit Symbol Pins Parameter Test Conditions (V) R ON On Resistance V IS = 1.5 to 1.5 R FLAT R ON On Resistance Flatness On Resistance Matching R SH L, R Shunt Resistance (Resistor + Switch) V BUS_PD V BUS_CTRL V BUS_CTRL Pull down Resistor V IS = 1.5 to 1.5 V IS = 0.85 to 0.85 Min Typ Max Unit k 4
5 AC ELECTRICAL CHARACTERISTICS TIMING/FREQUENCY (Typical: T = 25 C, = V, R L = 50, C L = 35 pf, f = 1 MHz) 40C to +85C Symbol Pins Parameter Test Conditions (V) Min Typ Max Unit t ON Turn ON Time (Closed to Open) 14 s (Figures 8 and 9) t OFF T BBM BW Turn OFF Time (Closed to Open) (Figures 8 and 9) Break Before Make Time (Figure 7) 3 db Bandwidth (Figure 10) C L = 5 pf R S = ns 7.0 s 900 MHz ISOLATION (Typical: T = 25 C, = V, R L = 50, C L = 5 pf) Symbol Pins Parameter Test Conditions (V) O IRR Open OFF Isolation (Figure 10) f = 100 khz, R S = 50 X TALK COM+ to COM Non Adjacent Channel Crosstalk (Figure 10) THD+N Total Harmonic Distortion + Noise f = 100 khz, R S = 50 V BUS_CTRL = 0 V A SEL = V f = 20 Hz to 20 khz V COM = 0.5 V pp R L = 600 THD Total Harmonic Distortion V BUS_CTRL = 0 V A SEL = 0 V, 3.6 V f = 1 khz V COM = ±2.0 V pp R L = 16 PSRR Power Supply Rejection Ratio f = 10 khz R COM = 50 40C to +85C Min Typ Max Unit 81 db 93 db % % 60 db CAPACITANCE (Typical: T = 25 C, = V, R L = 50, C L = 5 pf, f = 1 MHz, A SEL = 0 V) 40C to +85C Symbol Pins Parameter Test Conditions Min Typ Max Unit C IN A SEL Control Pin Capacitance = 0 V 2.6 pf C ON C ON USB ON Capacitance V BUS_CTRL = 5 V 6.9 pf Audio ON Capacitance V BUS_CTRL = 0 V 9.3 pf C OFF D+, D USB OFF Capacitance V BUS_CTRL = 0 V 4.8 pf C OFF R, L Audio OFF Capacitance V BUS_CTRL = 5 V 4.8 pf 5
6 Figure 3. High Speed USB Eye Diagram of Signal Path without Switch Figure 4. High Speed USB Eye Diagram of Signal Path with NS5S1153 ( = 3.6 V) RON (Ohms) Vcc=V Vcc=V Vcc=V V IS (V) Figure 5. Audio ON Resistance vs. Signal T = 25C, V V RON (Ohms) Vcc=V Vcc=V Vcc=V V IS (V) Figure 6. USB ON Resistance vs. Signal T = 25C, V V 6
7 0.1 F DUT V OUT pf GND Switch Select Pin 50 % OF DROOP t BMM VOLTAGE DROOP Figure 7. t BBM (Time Break Before Make) DUT 0 V 50% 50% 0.1 F Open V OUT pf V OH 90% 90% V OL Figure 8. t ON /t OFF t ON t OFF DUT 50 0 V 50% 50% Open V OUT 35 pf VOH V OL 10% 10% t OFF t ON Figure 9. t ON /t OFF 7
8 Reference DUT Generator Transmitted 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. V ISO, Bandwidth and V ONL are independent of the input signal direction. V ISO = Off Channel Isolation = 20 Log V OUT for V IN at 100 khz VIN V ONL = On Channel Loss = 20 Log V OUT for V IN at 100 khz to 50 MHz VIN Bandwidth (BW) = the frequency 3 db below V ONL V CT = Use V ISO setup and test to all other switch analog input/outputs terminated with 50 Figure 10. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/V ONL 8
9 PACKAGE DIMENSIONS UQFN10 1.4x1.8, 0.4P CASE 488AT 01 ISSUE A PIN 1 REFERENCE 2X 0.10 C 2X 0.10 C 0.05 C X C D ÉÉ TOP VIEW A1 SIDE VIEW A A E B C SEATING PLANE L1 EXPOSED Cu A1 DETAIL A Bottom View (Optional) ÉÉ DETAIL B Side View (Optional) EDGE OF PACKAGE MOLD CMPD A3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A A A REF b D 1.40 BSC E e 1.80 BSC 0.40 BSC L L L MOUNTING FOOTPRINT 9 X L e/2 e X X L3 b BOTTOM VIEW 0.10 C A B 0.05 C NOTE PITCH 10 X SCALE 20:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NS5S1153/D
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MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NLHV18T Channel Level Shifter
18-Channel Level Shifter The NLHV18T3244 is an 18 channel level translator designed for high voltage level shifting applications such as displays. The 18 channels are divided into twelve and two three
MC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
NCS2302. Headset Detection Interface with Send/End Detect
NCS232 Headset Detection Interface with Send/End Detect The NCS232 is a compact and cost effective headset detection interface IC. It integrates several circuit blocks to detect the presence of a stereo
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features
.8V, 4-PLL Low Power Clock Generator with Spread Spectrum Functional Description The PP4067 is a high precision frequency synthesizer designed to operate with a 27 MHz fundamental mode crystal. Device
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89
NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
LM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break
NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier
NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant