SGM3798 Audio Headset Analog Switch with Reduced GND Switch R ON and FM Capability

Transcription

1 GENERAL DESCRIPTION The is an audio headset analog switch that is used to detect 3.5mm accessories and switch SLEEVE and RING2 by external controller. The ground signal is routed through a pair of low-impedance ground FETs (75mΩ TYP), resulting minimal impact on audio crosstalk performance. The ground FETs of the device are designed to allow FM signal pass-through, making it possible to use the ground line of the headset as an FM antenna in mobile audio application. The is available in Green WLCSP B package. It operates over an ambient temperature range of -40 to +85. FEATURES Ground FET Switches R ON : 75mΩ (TYP) High Isolation Microphone Line Switches Supports FM Signal Transmission Through the Ground FETs Reduction of Click-Pop Noise Power Supply Voltage Range: 2.6V to 5.0V Total Harmonic Distortion (MIC): 0.01% (TYP) Low Current Consumption: 2μA (TYP) -40 to +85 Operating Temperature Range Available in Green WLCSP B Package APPLICATIONS Mobile Phones/Tablet PCs Notebook/Ultrabook Computers TYPICAL APPLICATION Power Supply C 1 0.1μF MIC_BIAS R 1 VDD RING1 Audio Codec MIC MICP S1 SLEEVE RING2 ACCDET Control R DET SELECT Control Logic FET1 FET2 R 2 1kΩ R PD GND GNDA GNDB FM Receiver Figure 1. Typical Application Circuit JANUARY REV. A

2 PACKAGE/ORDERING INFORMATION MODEL PACKAGE DESCRIPTION SPECIFIED TEMPERATURE RANGE ORDERING NUMBER WLCSP B -40 to +85 YG/TR PACKAGE MARKING 3798 XXXX PACKING OPTION Tape and Reel, 3000 NOTE: XXXX = Date Code. Green (RoHS & HSF): defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If you have additional comments or questions, please contact your SGMICRO representative directly. ABSOLUTE MAXIMUM RATINGS Voltage Range on VDD V to 6.0V Voltage Range on SELECT, MICP, RING2, SLEEVE V to V DD + 0.3V Junction Temperature Storage Temperature Range to +150 Lead Temperature (Soldering, 10s) ESD Susceptibility HBM V MM V CDM V RECOMMENDED OPERATING CONDITIONS Supply Voltage Range V to 5.0V Operating Temperature Range to +85 OVERSTRESS CAUTION Stresses beyond those listed may cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational section of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ESD SENSITIVITY CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. DISCLAIMER reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. JANUARY

3 PIN CONFIGURATION (TOP VIEW) VDD GNDB RING2 A MICP GNDA SLEEVE B SELECT NC GND C WLCSP B PIN DESCRIPTION PIN NAME I/O FUNCTION A1 VDD Power Supply for the Chip. A2 GNDB FET2 Ground Reference. A3 RING2 I/O Connected to the RING2 Segment of the Jack. This pin will be routed to MICP or GNDB depending on the logic level of SELECT pin. B1 MICP I/O Microphone Signal Connection to Codec. Microphone bias should be fed into this pin. B2 GNDA FET1 Ground Reference. B3 SLEEVE I/O Connected to the SLEEVE Segment of the Jack. This pin will be routed to MICP or GNDA depending on the logic level of SELECT pin. C1 SELECT I The Logic Signal Used to Control S1 Switch, FET1 and FET2. C2 NC No Connection. C3 GND Chip Ground Reference. S1 SWITCH FUNCTION TABLE MICP Φ 1 6Ω A SLEEVE SELECT 0 1 FUNCTION MICP = A = SLEEVE, FET2 Turn On, FET1 Turn Off. MICP = B = RING2, FET2 Turn Off, FET1 Turn On. Φ 2 6Ω B RING2 Figure 2. S1 Mux Detail JANUARY

4 ELECTRICAL CHARACTERISTICS (V DD = 2.6V to 5.0V, Full = -40 to +85, typical values are at V DD = 3.3V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP MIN TYP MAX UNITS Input Voltage Range V DD V Quiescent Current I Q V DD = 4.5V, V MICP = 1.8V to V DD, SELECT = Low or SELECT = High μa Input/Output Voltage Range V IO V DD 3.3V V DD V DD 3.3V V V DD = 2.6V Full 1.3 V DD Input Logic High for SELECT V IH V DD = 3.3V Full 1.4 V DD V Input Logic Low for SELECT V IL V DD = 4.5V Full 1.55 V DD V DD = 2.6V Full V DD = 3.3V Full V DD = 4.5V Full Pull Down Resistor of Select Pin R PD kω SWITCH RESISTANCE FET1 On Resistance R F1 V DD = 2.6V, V GND = 0V, I GND = 10mA FET2 On Resistance R F S1 On Resistance (Closed to A) R S1A V DD = 2.6V, V SLEEVE/RING2 = 0V to 2.6V, S1 On Resistance (Closed to B) R S1B I MIC = ±10mA SWITCH LEAKAGE CURRENT FET1, FET2 Off Leakage Current I FET(OFF) μa S1A, S1B Off Leakage Current I S1AB(OFF) V DD = 5.5V, V IN = 0V to 3.3V, V OUT = 0V, SELECT = 0V to 5.5V μa S1A, S1B On Leakage Current I S1AB(ON) μa SWITCH DYNAMIC CHARACTERISTICS FET1 Bandwidth BW F1 V = 60mV PP, I BIAS = 10mA MHz FET2 Bandwidth BW F MHz Power Supply Rejection PSRR V DD = 2.6V, V AC = 200mV PP, V DC = 0V, f = 217Hz, R S = R L = 600Ω V DD = 2.6V, V AC = 200mV PP, V DC = 0V, f = 1kHz, R S = R L = 600Ω V DD = 2.6V, V AC = 200mV PP, V DC = 0V, f = 20kHz, R S = R L = 600Ω V DD = 5V, V AC = 200mV PP, V DC = 0V, f = 217Hz, R S = R L = 600Ω V DD = 5V, V AC = 200mV PP, V DC = 0V, f = 1kHz, R S = R L = 600Ω V DD = 5V, V AC = 200mV PP, V DC = 0V, f = 20kHz, R S = R L = 600Ω SLEEVE or RING2 to MICP Isolation ISO S1 V = 200mV PP, f = 20kHz, R L = 50Ω db SLEEVE to RING2 Separation SEP S1 V = 200mV PP, f = 20kHz, R L = 50Ω db Total Harmonic Distortion DYNAMIC CHARACTERISTICS THD V = 200mV PP, f = 20-20kHz, R S = 600Ω, BW = 80kHz V mω Ω db % Turn-On Time t ON ns Turn-Off Time t OFF ns Break-Before-Make Time Delay t D ns JANUARY

5 TYPICAL PERFORMANCE CHARACTERISTICS On Resistance (Ω) On Resistance vs. Input Voltage FET2 70 FET Input Voltage (V) Bandwidth (db) Bandwidth vs. Frequency FET1-6 FET Frequency (MHz) THD+N vs. Frequency (SLEEVE) THD+N vs. Frequency (RING2) V DD = 3.3V BW < 80kHz V DD = 3.3V BW < 80kHz 10mV PP 10mV PP THD+N (%) 200mV PP THD+N (%) 200mV PP Frequency (Hz) Frequency (Hz) JANUARY

6 PACKAGE INFORMATION PACKAGE OUTLINE DIMENSIONS WLCSP B A1 CORNER Φ TOP VIEW RECOMMENDED LAND PATTERN 1.200± Φ0.270± A 0.195± ± ± B C ± SIDE VIEW BOTTOM VIEW NOTE: All linear dimensions are in millimeters. TX

7 PACKAGE INFORMATION TAPE AND REEL INFORMATION REEL DIMENSIONS TAPE DIMENSIONS P2 P0 W Q1 Q2 Q1 Q2 Q1 Q2 B0 Q3 Q4 Q3 Q4 Q3 Q4 Reel Diameter P1 A0 K0 Reel Width (W1) DIRECTION OF FEED NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF TAPE AND REEL Package Type Reel Diameter Reel Width W1 A0 B0 K0 P0 P1 P2 W Pin1 Quadrant WLCSP B Q1 DD0001 TX

8 PACKAGE INFORMATION CARTON BOX DIMENSIONS NOTE: The picture is only for reference. Please make the object as the standard. KEY PARAMETER LIST OF CARTON BOX Reel Type Length Width Height Pizza/Carton 7 (Option) DD0002 TX