SGM Ω, 300MHz, Low-Power Full-Speed USB (12Mbps) Switch

Transcription

1 GENERAL ESCRIPTION The SGM2258 is a high-performance, dual, single-pole/ double-throw (SPT) CMOS analog switch designed for switching USB 1.1 signals. High bandwidth and low on-resistance make this switch able to pass both USB low- and full-speed signal with minimum signal distortion. The SGM2258 features guaranteed on-resistance matching (.3Ω TYP) between switches and guaranteed on-resistance flatness over the signal range (2Ω TYP). This ensures excellent linearity and low distortion when switching signals. The device is fabricated with sub-micron CMOS technology to achieve fast switching speeds and designed for break-before-make operation. The select input is TTL-level compatible. SGM2258 is available in TQFN-1 (2.1mm 1.6mm) package. It operates over an ambient temperature range of -4 C to +85 C. FEATURES Operation Voltage: +1.8V to +5.5V On-Resistance: 4.5Ω (TYP) at +4.5V High Bandwidth: 3MHz Switching Times: t ON 7ns t OFF 2ns High Off-Isolation: -51dB at 1MHz Low Crosstalk: -67dB at 1MHz Rail-to-Rail Operation TTL/CMOS Compatible Break-Before-Make Switching Extended Industrial Temperature Range: -4 C to +85 C Lead (Pb) Free TQFN-1 Package APPLICATIONS Routes Signals for USB 1.1 Portable Instrumentation Battery-Operated Equipment Computer Peripherals Cell Phones PAs MP3s REV. A

2 ORERING INFORMATION MOEL SGM2258 PIN- PACKAGE TQFN-1 (2.1mm 1.6mm) SPECIFIE TEMPERATURE RANGE ORERING NUMBER PACKAGE MARKING PACKAGE OPTION -4 C to +85 C SGM2258YTQ1/TR 2258 Tape and Reel, 3 ABSOLUTE MAXIMUM RATINGS, IN to V to 6V Analog, igital voltage range (1) V to () +.3V Continuous Current 1, 2, or... ±1mA Operating Temperature Range C to +85 C Junction Temperature C Storage Temperature C to +15 C Lead Temperature (soldering, 1s) C ES Susceptibility MM...4V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on 1, 2, or S exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. CAUTION This integrated circuit can be damaged by ES if you don t pay attention to ES protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ES damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PIN CONFIGURATION (TOP VIEW) 1- S FUNCTION TABLE S 2-, 2+ 1-, 1+ OFF ON 1 ON OFF Switches Shown For Logic Input 1 5 PIN ESCRIPTION S TQFN-1 (2.1mm 1.6mm) PIN NAME FUNCTION 5 Power Supply 1 Ground 8,2 S1, S2 Select Input 7,3 -, + Common Output/ata Port 6,4 2-, 2+ ata Port (Normally Open) 9,1 1-, 1+ ata Port (Normally Closed) 2

3 ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, V IH = +1.6V, V IL = +.5V, T A = -4 C to +85 C. Typical values are at = +5.V, T A = +25 C, unless otherwise noted.) PARAMETER SYMBOL CONITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range (1+, 1-, 2+, 2-) V IS -4 C to +85 C V On-Resistance R ON = 4.5V, V V IS, +25 C Ω I = -1mA, Test Circuit 1-4 C to +85 C 9.5 Ω On-Resistance Match Between Channels On-Resistance Flatness Source Off Leakage Current Channel On Leakage Current IGITAL INPUTS R ON R FLAT(ON) I 2(OFF), I 1(OFF) I 2(ON), I 1(ON) = 4.5V, V V IS, +25 C.3.6 Ω I = -1mA, Test Circuit 1-4 C to +85 C.8 Ω = 4.5V, V V IS, +25 C Ω I = -1mA, Test Circuit 1-4 C to +85 C 3.8 Ω = 5.5V, V IS = 3.3V/.3V, V =.3V/ 3.3V = 5.5V, V IS =.3V/ 3.3V, V =.3V/ 3.3V, or floating -4 C to +85 C 1 µa -4 C to +85 C 1 µa Input High Voltage V INH -4 C to +85 C 1.6 V Input Low Voltage V INL -4 C to +85 C.5 V Input Leakage Current I IN = 5.5V, V S = V or 5.5V -4 C to +85 C 1 µa YNAMIC CHARACTERISTICS Turn-On Time t ON = 4.2V, V IS = 3.V, +25 C 7 ns Turn-Off Time = 5Ω, C L = 35pF, Test Circuit C 2 ns t OFF Break-Before-Make Time V t + = 4.2V, V IS = 3.V, elay = 5Ω, C L = 35pF, Test Circuit C 1 ns = 4.2V, V G =, R G = Ω, Charge Injection Q C L = 1.nF, Q = C L x, +25 C 6 pc Test Circuit 4 Channel On Capacitance C ON +25 C 41 pf Off Isolation O ISO = 4.2V, Signal = dbm, f = 1MHz +25 C -71 db = 5Ω, Test Circuit 5 f = 1MHz +25 C -51 db Channel-to-Channel Crosstalk -3dB Bandwidth POWER REQUIREMENTS X TALK BW = 4.2V, Signal = dbm, f = 1MHz +25 C -99 db = 5Ω, Test Circuit 6 f = 1MHz +25 C -67 db = 4.2V, Signal = dbm, = 5Ω, Test Circuit C 3 MHz Power Supply Range -4 C to +85 C V Power Supply Current I + = 5.5V, V IN = V or -4 C to +85 C 1 µa Specifications subject to changes without notice. 3

4 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.5V, V IL = +.4V, T A = -4 C to +85 C. Typical values are at = +3.V, T A = +25 C, unless otherwise noted.) PARAMETER SYMBOL CONITIONS TEMP MIN TYP MAX UNITS ANALOG SWITCH Analog Signal Range (1+, 1-, 2+, 2-) V IS -4 C to +85 C V On-Resistance R ON = 2.7V, V V IS, +25 C 7 13 Ω I = -1mA, Test Circuit 1-4 C to +85 C 14 Ω On-Resistance Match Between Channels On-Resistance Flatness Source Off Leakage Current Channel On Leakage Current IGITAL INPUTS R ON R FLAT(ON) I 2(OFF), I 1(OFF) I 2(ON), I 1(ON) = 2.7V, V V IS, +25 C.3.85 Ω I = -1mA, Test Circuit 1-4 C to +85 C 1. Ω =2.7V, V V IS, +25 C Ω I = -1mA, Test Circuit 1-4 C to +85 C 1.3 Ω = 3.6V, V IS = 3.3V/.3V, V =.3V/ 3.3V = 3.6V, V =.3V/ 3.3V, V IS =.3V/ 3.3V, or floating -4 C to +85 C 1 µa -4 C to +85 C 1 µa Input High Voltage V INH -4 C to +85 C 1.5 V Input Low Voltage V INL -4 C to +85 C.4 V Input Leakage Current I IN = 2.7V, V S = V or 2.7V -4 C to +85 C 1 µa YNAMIC CHARACTERISTICS Turn-On Time t ON V IS = 1.5V, = 5Ω, +25 C 95 ns Turn-Off Time t OFF C L = 35pF, Test Circuit C 4 ns Break-Before-Make Time V t IS = 1.5V, = 5Ω, elay C L = 35pF, Test Circuit C 12 ns Charge Injection Q V G =, R G = Ω, C L = 1.nF, Q = C L x, Test Circuit C 5 pc Channel On Capacitance C ON +25 C 41 pf Off Isolation O ISO Signal = dbm, = 5Ω, f = 1MHz +25 C -72 db Test Circuit 5 f = 1MHz +25 C -52 db Channel-to-Channel Crosstalk -3dB Bandwidth X TALK BW Specifications subject to changes without notice. Signal = dbm, = 5Ω, f = 1MHz +25 C -99 db Test Circuit 6 f = 1MHz +25 C -67 db Signal = dbm, = 5Ω, Test Circuit C 3 MHz 4

5 TYPICAL PERFORMANCE CHARACTERISTICS On Response (db) On Response vs. Frequency V+ = +3.V T A = +25 On Response (db) On Response vs. Frequency V+ = +4.2V T A = +25 On Response (db) Frequency (MHz) Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +3.V T A = Frequency (MHz) On Response (db) Frequency (MHz) Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +4.2V T A = Frequency (MHz) 5

6 TEST CIRCUITS 1mA V1 1 or 2 R ON = V1/1mA Test Circuit 1. On Resistance.1μF V S 1 2 C L V OH 5% 5% 9% 9% V OL t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF ) 1 5% V S.1μF 2 C L 9% of V OH V S t Test Circuit 3. Break-Before-Make Time elay (t ) 6

7 TEST CIRCUITS (Cont.) 1 V G R G S 2 C L ΔOUT Q = Δ C L Test Circuit 4. Charge Injection.1μF 1 2 Source Signal S Test Circuit 5. Off Isolation.1μF 1- or 2- - Source Signal S1 S2 N.C. 1+ or 2+ + Channel To Channel Crosstalk = -2 log V IS Test Circuit 6. Channel-to-Channel Crosstalk 7

8 TEST CIRCUITS (Cont.).1μF 1 or 2 Source Signal S Test Circuit 7. -3dB Bandwidth 8

9 PACKAGE OUTLINE IMENSIONS TQFN-1 (2.1mm 1.6mm) 2.1±.5.4±.5 ( 9).5 Bsc 1.6±.5.8 Ref..15 PIN #1 OT BY MARKING TOP VIEW.2± Ref. BOTTOM VIEW.8 PIN #1 IENTIFICATION.75±.5.23 Ref..-.5 SIE VIEW Note: All linear dimensions are in millimeters. 1/29 REV. A SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 9