SGM Ω Ultra Low ON-Resistance, Dual, SPDT Analog Switch

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1 GENERAL DESCRIPTION The SGM2267 is a dual single-pole/double-throw (SPDT) analog switch that is designed to operate from a single +1.8V to +4.2V power supply. Targeted applications include battery powered equipment that benefit from ultra low on-resistance (.4Ω) and fast switching speeds. SGM2267 features guaranteed on-resistance matching (.4Ω TYP) between switches and guaranteed onresistance flatness over the signal range (.8Ω TYP), as well as high off-isolation and low crosstalk. This ensures excellent linearity and low distortion when switching audio signals. The SGM2267 is a committed dual single-pole/double -throw (SPDT) that consist of two normally open () and two normally close () switches. This configuration can be used as a dual 2-to-1 multiplexer. SGM2267 is available in Pb-free TQFN-1 (2.1mm 1.6mm) package. FEATURES Voltage Operation: +1.8V to +4.2V Ultra Low On-Resistance:.4Ω (TYP) at +4.2V On-Resistance Matching:.4Ω (TYP) On-Resistance Flatness:.8Ω (TYP) -3dB Bandwidth: 4MHz High Off-Isolation: -78dB at 1kHz Low Crosstalk: -13dB at 1kHz Rail-to-Rail Input and Output Operation TTL/CMOS Compatible Break-Before-Make Switching Extended Industrial Temperature Range: -4 to +85 Lead (Pb) Free TQFN-1 (2.1mm 1.6mm) Package APPLICATIONS Portable Instrumentation Battery-Operated Equipment Computer Peripherals Speaker and Earphone Switching Medical Equipment Audio and Video Switching REV. A

2 ORDERG FORMATION MODEL SGM2267 P- PACKAGE TQFN-1 (2.1mm 1.6mm) SPECIFIED TEMPERATURE RANGE ORDERG NUMBER PACKAGE MARKG PACKAGE OPTION -4 to +85 SGM2267YTQD1/TR 2267 Tape and Reel, 3 ABSOLUTE MAXIMUM RATGS, to...v to 4.6V Analog, Digital voltage range (1) V to () +.3V Continuous Current,, or...±25ma Peak Current,, or...±35ma Operating Temperature Range...-4 to +85 Junction Temperature...15 Storage Temperature to +15 Lead Temperature (soldering, 1s)...26 ESD Susceptibility HBM...4V MM...4V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (1) Signals on,, or or exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. CAUTION This integrated circuit can be damaged by ESD if you don t pay attention to ESD protection. SGMICRO recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. P CONFIGURATION (TOP VIEW) V TQFN-1 (2.1mm 1.6mm) FUTION TABLE LOGIC OFF ON 1 ON OFF Switches Shown For Logic Input P DESCRIPTION P NAME FUTION 1 Power supply 5 Ground 8,7 1, 2 Digital control pin to connect the terminal to the or terminals 9,6 1, 2 Common terminal 2,4 1, 2 Normally-open terminal 1,3 1, 2 Normally-closed terminal Note:, and terminals may be an input or output. 2

3 ELECTRICAL CHARACTERISTICS ( = +4.2V, = V, V IH = +1.6V, V IL = +.6V, T A = -4 to +85. Typical values are at = +4.2V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V, V, V -4 C to +85 C V On-Resistance On-Resistance Match Between Channels On-Resistance Flatness R ON R ON R FLAT(ON) = 4.2V, V V or V, +25 C.4.65 Ω I = -1mA, Test Circuit 1-4 C to +85 C.75 Ω = 4.2V, V V or V, +25 C.4.15 Ω I = -1mA, Test Circuit 1-4 C to +85 C.2 Ω = 4.2V, V V or V, +25 C.8.12 Ω I = -1mA, Test Circuit 1-4 C to +85 C.2 Ω Source OFF Leakage Current I (OFF), I (OFF) = 4.2V, V or V = 3.3 V/.3V, V =.3V/ 3.3V -4 C to +85 C 1 µa Channel ON Leakage Current DIGITAL PUTS I (ON), I (ON), I (ON) = 4.2 V, V =.3V/ 3.3V, V or V =.3V/ 3.3V, or floating -4 C to +85 C 1 µa Input High Voltage V H -4 C to +85 C 1.6 V Input Low Voltage V L -4 C to +85 C.5 V Input Leakage Current I = 4.2V, V = V or 4.2V -4 C to +85 C 1 µa DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk t ON t OFF t D O ISO X TALK V = 2.1V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 = 2.1V, Test Circuit2 +25 C 96 ns V = 2.1V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 = 2.1V, +25 C 16 ns Test Circuit2 V = 2.1V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 = 2.1V, +25 C 25 ns Test Circuit3 = 5Ω, Signal = dbm, 1kHz +25 C -78 db Test Circuit4 1MHz +25 C -58 db = 5Ω, Signal = dbm, 1kHz +25 C -13 db Test Circuit5 1MHz +25 C -9 db 3dB Bandwidth BW = 5Ω, Signal = dbm, Test Circuit6 +25 C 4. MHz Charge Injection Select Input to Common I/O Q V 1 or V 1 = V 2 or V 2 = V, = 1.nF, R s = Ω,Test Circuit7 +25 C 4. pc Total Harmonic Distortion + Noise THD+N V = 2V P-P, f = 2Hz to 2kHz, Test Circuit8 +25 C.11 % Channel ON Capacitance C ON +25 C 16 pf POWER REQUIREMENTS Power Supply Range -4 C to +85 C V Power Supply Current I + = 4.2V, V = V or -4 C to +85 C 1 µa Specifications subject to changes without notice. 3

4 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, = V, V IH = +1.6V, V IL = +.4V, T A = -4 to +85. Typical values are at = +3.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V, V, V -4 C to +85 C V On-Resistance R ON = 2.7V, V V or V, +25 C.5.7 Ω I = -1mA, Test Circuit 1-4 C to +85 C.8 Ω On-Resistance Match Between Channels On-Resistance Flatness R ON R FLAT(ON) = 2.7V, V V or V, +25 C.3.15 Ω I = -1mA, Test Circuit 1-4 C to +85 C.2 Ω = 2.7V, V V or V, +25 C.1.18 Ω I = -1mA, Test Circuit 1-4 C to +85 C.2 Ω Source OFF Leakage Current I (OFF), I (OFF) = 3.6V, V or V = 3.3V/.3V, V =.3V/ 3.3V -4 C to +85 C 1 µa Channel ON Leakage Current DIGITAL PUTS I (ON), I (ON), I (ON) = 3.6V, V =.3V/ 3.3V, V or V =.3V/ 3.3V, or floating -4 C to +85 C 1 µa Input High Voltage V H -4 C to +85 C 1.5 V Input Low Voltage V L -4 C to +85 C.4 V Input Leakage Current I = 2.7V, V = V or 2.7V -4 C to +85 C 1 µa DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Break-Before-Make Time Delay Off Isolation Channel-to-Channel Crosstalk t ON t OFF t D O ISO X TALK V =1.5V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 = 1.5V, Test Circuit2 V = 1.5V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 = 1.5V, Test Circuit2 V = 1.5V to V, = 5Ω, = 35pF, V 1 or V 1 = V 2 or V 2 =1.5V, Test Circuit3 +25 C 1 ns +25 C 25 ns +25 C 28 ns = 5Ω, Signal = dbm, 1kHz +25 C -78 db Test Circuit4 1MHz +25 C -58 db = 5Ω, Signal = dbm, 1kHz +25 C -13 db Test Circuit5 1MHz +25 C -9 db 3dB Bandwidth BW = 5Ω, Signal = dbm, Test Circuit6 +25 C 4 MHz Charge Injection Select Input to Common I/O Total Harmonic Distortion + Noise Channel ON Capacitance Q THD+N V 1 or V 1 = V 2 or V 2 = V, =1.nF, R S = Ω, Test Circuit7 V =1.5V P-P, f = 2Hz to 2kHz, Test Circuit8 +25 C 4. pc +25 C.15 % C ON +25 C 16 pf Specifications subject to changes without notice. 4

5 TYPICAL PERFORMAE CHARACTERISTICS On Response (db) On Response vs. Frequency V+ = +4.2V T A = +25 On Response (db) On Response vs. Frequency V+ = +3V T A = Frequency (MHz) Frequency (MHz) On Response (db) OFF-ISOLATION Response vs. Frequency CROSSTALK V+ = +4.2V T A = Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +3V T A = Frequency (MHz) 5

6 TEST CIRCUITS 1mA V1 or V or V R ON = V1/1mA Test Circuit 1. On Resistance.1μF 5Ω 35pF V OH 5% 5% 9% 9% V OL t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF ) 5% V.1μF 5Ω 35pF 9% of V OH t D Test Circuit 3. Break-Before-Make Time (t D ) 6

7 TEST CIRCUITS (Cont.).1µF Source Signal 5Ω 5Ω 5pF Test Circuit 4. Off Isolation.1μF or Source Signal 1 5Ω 5pF 2 N.C. or 5Ω 5pF Channel To Channel Crosstalk = -2 log V or V Test Circuit 5. Channel-to-Channel Crosstalk 7

8 TEST CIRCUITS (Cont.).1μF or Source Signal 5pF Test Circuit 6. -3dB Bandwidth V S R S 1nF ΔOUT Q = Δ Test Circuit 7. Charge Injection (Q) /2 Source Signal Audio Analyzer 6Ω 6Ω.1μF 1μF 6Ω 5pF 1μF V 1kΩ 6Ω Test Circuit 8. Total Harmonic Distortion 8

9 PACKAGE OUTLE DIMENSIONS TQFN-1 (2.1mm 1.6mm) 2.1±.5.4±.5 ( 9).5 Bsc 1.6±.5.8 Ref..15 P #1 DOT BY MARKG TOP VIEW.2± Ref. BOTTOM VIEW.8 P #1 IDENTIFICATION.75±.5.23 Ref..-.5 SIDE VIEW Note: All linear dimensions are in millimeters. 12/28 REV. A SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 9