SGM Ω, High Speed, Low Voltage Dual, DPDT Analog Switch

Transcription

1 GENERAL DESCRIPTION The SGM4462 is a dual, high-speed, low-voltage, double-pole/double-throw (DPDT) CMOS analog switch that is designed to operate from a single 1.8V to 5.5V power supply. It features high-bandwidth (3MHz) and low on-resistance (4Ω TYP), targeted applications for audio switching. The SGM4462 consists of four SPDT switches. The configuration can be used as a bidirectional quad 2-channel multiplexer/demultiplexer with a single switch-enable ( 1-4 ) input. SGM4462 can handle rail-to-rail analog signals and is available in Pb-free TQFN-16 (2.6mm 1.8mm) package. FEATURES Low Voltage Operation: 1.8V to 5.5V Low On-Resistance: 4Ω (TYP) Low On-Resistance Flatness -3dB Bandwidth: 3MHz High Off-Isolation: -75dB at 1MHz Low Crosstalk: -1dB at 1MHz Rail-to-Rail Input and Output Operation Typical Power Consumption (<.1µW) TTL/CMOS Compatible Lead (Pb) Free TQFN-16 (2.6mm 1.8mm) Package Extended Industrial Temperature Range: -4 to +85 APPLICATIONS Communication Systems Cell Phones Portable Instrumentation Audio Signal Routing Audio and Video Switching PCMCIA Cards Computer Peripherals Modems PDAs BLOCK DIAGRAM NC1 NO1 NC2 NO2 NC3 NO3 NC4 NO4 REV. A. 1

2 ORDERG FORMATION MODEL SGM4462 P- PACKAGE TQFN-16 (2.6mm 1.8mm) SPECIFIED TEMPERATURE RANGE ORDERG NUMBER PACKAGE MARKG PACKAGE OPTION - 4 to +85 SGM4462YTQA16/TR 4462 Tape and Reel, 3 ABSOLUTE MAXIMUM RATGS to...v to 6V Analog, Digital voltage range...-.3v to () +.3V Continuous Current NO, NC, or...±1ma Operating Temperature Range...-4 to +85 Junction Temperature...15 Storage Temperature to +15 Lead Temperature (soldering, 1s)...26 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. P CONFIGURATION (TOP VIEW) P DESCRIPTION SGM4462YTQA16 4 NO4 N.C. NC3 NAME TQFN P FUNCTION 14 Power supply NC4 NO NO3 6 Ground Digital control pin to connect the terminal to the NO or NC terminals N.C. 1 Not internally connected NC2 X 16, 4, 8, 12 Common terminal NO X 15, 3, 7, 11 Normally-open terminal NC1 1-4 NO2 2 NC X 1, 5, 9, 13 Normally-closed terminal TQFN-16 (2.6mm 1.8mm) Note: NO X, NC X and X terminals may be an input or output. FUNCTION TABLE 1-4 Function NC1, 2, 3 and 4 NO1, 2, 3 and 4 ON OFF 1 OFF ON 2

3 ELECTRICAL CHARACTERISTICS ( = +4.5V to +5.5V, = V, V IH = +1.6V, V IL = +.5V, T A = -4 to +85. Typical values are at = +5.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -4 to +85 V On-Resistance R ON = 4.5V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω On-Resistance Match Between Channels On-Resistance Flatness R ON R FLAT(ON) = 4.5V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω = 4.5V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 5.5V, V NO or V NC = 3.3V/.3V, V =.3V/ 3.3V = 5.5V, V =.3V/ 3.3V, V NO or V NC =.3V/ 3.3V, or floating -4 to µa -4 to µa Input High Voltage V H -4 to V Input Low Voltage V L -4 to V Input Leakage Current I = 5.5V, V = V or 5.5V -4 to µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 3.V, = 3Ω, ns Turn-Off Time = 35pF, Test Circuit ns Break-Before-Make Time Delay Charge Injection Off Isolation t OFF t D Q O ISO V NC or V NO = 3.V, = 3Ω, = 35pF, Test Circuit4 V G =, R G = Ω, = 1.nF, Q = x, Test Circuit ns pc Signal = dbm, =, 1MHz db Test Circuit5 1MHz Channel-to-Channel Crosstalk X TALK Signal = dbm, =, 1MHz db Test Circuit6 1MHz dB Bandwidth BW Signal = dbm, =, Test Circuit MHz Channel ON Capacitance POWER REQUIREMENTS C NC(ON), C NO(ON), C (ON) pf Power Supply Range -4 to V Power Supply Current I + = 5.5V, V = V or -4 to µa Specifications subject to changes without notice. 3

4 ELECTRICAL CHARACTERISTICS ( = +2.7V to +3.6V, V IH = +1.6V, V IL = +.4V, T A = -4 to +85. Typical values are at = +3.V, T A = +25, unless otherwise noted.) PARAMETER SYMBOL CONDITIONS TEMP M TYP MAX UNITS ANALOG SWITCH Analog Signal Range V NO, V NC, V -4 to +85 V On-Resistance R ON = 2.7V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω On-Resistance Match Between Channels R ON = 2.7V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω On-Resistance Flatness Source OFF Leakage Current Channel ON Leakage Current DIGITAL PUTS R FLAT(ON) I NC(OFF), I NO(OFF) I NC(ON), I NO(ON), I (ON) = 2.7V, V V NO or V NC, Ω I = -1mA, Test Circuit 1-4 to Ω = 3.6V, V NO or V NC = 3.3V /.3V, V =.3V/ 3.3V = 3.6V, V =.3V/ 3.3V, V NO or V NC =.3V/ 3.3V, or floating -4 to µa -4 to µa Input High Voltage V H -4 to V Input Low Voltage V L -4 to V Input Leakage Current I = 2.7V, V = V or 2.7V -4 to µa DYNAMIC CHARACTERISTICS Turn-On Time t ON V NC or V NO = 1.5V, = 3Ω, Ns Turn-Off Time = 35pF, Test Circuit Ns Break-Before-Make Time Delay Charge Injection Off Isolation t OFF t D Q O ISO V NC or V NO = 1.5V, = 3Ω, = 35pF, Test Circuit4 V G =, R G = Ω, = 1.nF, Q = x, Test Circuit Ns pc Signal = dbm, =, 1MHz db Test Circuit5 1MHz db Channel-to-Channel Crosstalk X TALK Signal = dbm, =, 1MHz db Test Circuit6 1MHz db 3dB Bandwidth BW Signal = dbm, =, Test Circuit MHz Channel ON Capacitance C NC(ON), C NO(ON), C (ON) Specifications subject to changes without notice pf 4

5 TYPICAL PERFORMANCE CHARACTERISTICS On Response vs. Frequency On Response vs. Frequency 3 3 On Response (db) -3-6 V+ = +4.2V T A = +25 On Response (db) -3-6 V+ = +3V T A = Frequency (MHz) Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +4.2V T A = Frequency (MHz) On Response (db) Response vs. Frequency OFF-ISOLATION CROSSTALK V+ = +3V T A = Frequency (MHz) 5

6 TEST CIRCUITS 1mA V1 V NO or V NC R ON = V1/1mA Test Circuit 1. On Resistance V 5% 5% V NO or V NC RL 3Ω 35pF 9% 9% t ON t OFF Test Circuit 2. Switching Times (t ON, t OFF ) R G ΔVOUT V G 1nF V ON OFF ON V Q = Δ V Test Circuit 3. Charge Injection 6

7 TEST CIRCUITS (Cont.) V NO or V NC NC NO V 5% 3Ω 35pF V NO or V NC 9% Test Circuit 4. Break-Before-Make Time Delay (t D ) t D NC NO Source Signal 5pF Test Circuit 5. Off Isolation Source Signal 5pF N.C. 5pF Channel To Channel Crosstalk = -2 log V NO or V NC Test Circuit 6. Channel-to-Channel Crosstalk 7

8 TEST CIRCUITS (Cont.) 1nF Source Signal 5pF Test Circuit 7. -3dB Bandwidth 8

9 PACKAGE OUTLE DIMENSIONS TQFN-16 (2.6mm 1.8mm) 2.6±.5.4±.5 ( 15).4 TYP P #1 IDENTIFICATION CHAMFER ± Ref..5±.5 P #1 DOT BY MARKG TOP VIEW 2 1.2±.5 BOTTOM VIEW.75± Ref. SIDE VIEW Note: All linear dimensions are in millimeters. 12/28 REV. A. 1 SGMICRO is dedicated to provide high quality and high performance analog IC products to customers. All SGMICRO products meet the highest industry standards with strict and comprehensive test and quality control systems to achieve world-class consistency and reliability. For information regarding SGMICRO Corporation and its products, see 9