MAX4751/MAX4752/MAX Ω, Low-Voltage, Single-Supply Quad SPST Analog Switches
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1 // General Description The // are low on-resistance, low-voltage, quad, single-pole/single-throw (SPST) analog switches that operate from a single +1.V to +3.V supply. These devices have fast switching speeds (t = 3ns, t = 2ns), handle rail-to-rail analog signals, and consume less than 1µW of quiescent power. The has break-before-make switching. When powered from a +3V supply, the / / feature low.9ω (max) on-resistance (R ), with.12ω (max) R matching and.1ω (max) R flatness. The digital input is 1.8V CMOS compatible when using a single +3V supply. The has four normally open (NO) switches, the has four normally closed (NC) switches, and the has two NO and two NC switches. The // are available in 3mm 3mm, 1-pin QFN and 14-pin TSSOP packages. Applications Power Routing Battery-Powered Systems Audio and Video Signal Routing Low-Voltage Data-Acquisition Systems Communications Circuits PCMCIA Cards Cellular Phones Modems Hard Drives Low R.9Ω max (+3V Supply) 2.Ω max (+1.8V Supply) On-Resistance Flatness:.1Ω max (+3V) R Matching.12Ω max (+3V Supply).2Ω max (+1.8V Supply) +1.V to +3.V Single-Supply Operation Available in 1-Pin QFN and 3mm 3mm Packages 1.8V CMOS Logic Compatible (+3V Supply) High Current-Handling Capacity (1mA Continuous) Fast Switching: t = 3ns, t = 2ns PART Features Ordering Information TEMP RANGE PIN- PACKAGE TOP MARK EUD+T -4 C to +8 C 14 TSSOP EGE+T -4 C to +8 C 1 QFN-EP* (3mm 3mm) AAC EUD+T -4 C to +8 C 14 TSSOP EGE+T -4 C to +8 C 1 QFN-EP* (3mm 3mm) AAD EUD+T -4 C to +8 C 14 TSSOP 1 QFN-EP* EGE+T -4 C to +8 C (3mm 3mm) *EP = Exposed pad. +Denotes a lead(pb)-free/rohs-compliant package. T = Tape and reel. Pin Configurations/Functional Diagrams/Truth Tables AAE TOP VIEW NO NC NO COM IN1 COM IN1 COM IN1 NO IN4 NC IN4 NC IN4 COM NO4 COM NC4 COM NC4 IN2 1 9 COM4 IN2 1 9 COM4 IN2 1 9 COM4 7 8 NO3 7 8 NC3 7 8 NO3 TSSOP INPUT SWITCH STATE LOW HIGH TSSOP INPUT SWITCH STATE LOW HIGH INPUT LOW HIGH TSSOP NO1, NO3 NC2, NC4 Pin Configurations/Functional Diagrams/Truth Tables continued at end of data sheet. For pricing, delivery, and ordering information, please contact Maxim Direct at , or visit Maxim Integrated s website at ; Rev 2; 1/13
2 // ABSOLUTE MAXIMUM RATINGS (Voltages referenced to.),...-.3v to +4V COM_, NO_, NC_ (Note 1)...-.3V to ( +.3V) Continuous Current (COM_, NO_, NC_)...±1mA Peak Current COM_, NO_, NC_ (pulsed at 1ms 1% duty cycle)...±2ma Continuous Power Dissipation (T A = +7 C) TSSOP (derate 9.1W/ C above +7 C)...727mW QFN (derate 1.9W/ C above +7 C) mW Operating Temperature Range...-4 C to +8 C Junction Temperature...+1 C Storage Temperature Range...- C to +1 C Lead Temperature (soldering, 1s)...+3 C Soldering Temperature (reflow)...+2 C Note 1: Signals on COM_, NO_, or NC_ exceeding or are clamped by internal diodes. Limit forward diode current to maximum current rating. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Single +3V Supply ( = +2.7V to +3.V, V IH _ = +1.4V, V IL _ = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at = +3.V, T A = +2 C.) (Notes 2, 3) ANALOG SWITCH PARAMETER SYMBOL CDITIS T A MIN TYP MAX UNITS Analog Signal Range V COM _, V NO _, V NC _ V On-Resistance (Note 4) R I COM _ = 1mA, = 2.7V, +2 C..9 V NO _ or V NC _ = 1.V T MIN to T MAX 1 Ω On-Resistance Match Between Channels (Notes 4, ) R = 2.7V, +2 C.3.12 I COM _ = 1mA, V NO _ or V NC _ = 1.V T MIN to T MAX.1 Ω On-Resistance Flatness (Note ) R FLAT() = 2.7V, +2 C.4.1 I COM _ = 1mA, V NO _ or V NC _ = 1V, 1.V, 2V T MIN to T MAX.12 Ω NO_ or NC_ Off-Leakage Current (Note 7) I NO _ (), I NC _ () = 3.V, +2 C V COM _ =.3V, 3.V, V NO _ or V NC _ = 3.V,.3V T MIN to T MAX - + na COM_ Off-Leakage Current (Note 7) I COM _ () = 3.V, V COM _ =.3V, +2 C V, V NO _ or V NC _ = 3.V,.3V T MIN to T MAX - + na COM_ On-Leakage Current (Note 7) I COM _ () = 3.V, V COM _ =.3V, +2 C V, V NO _ or V NC _ =.3V, 3.V, or unconnected T MIN to T MAX - + na 2 Maxim Integrated
3 // ELECTRICAL CHARACTERISTICS Single +3V Supply (continued) ( = +2.7V to +3.V, V IH _ = +1.4V, V IL _ = +.V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at = +3.V, T A = +2 C.) (Notes 2, 3) PARAMETER SYMBOL CDITIS T A MIN TYP MAX UNITS SWITCH DYNAMIC CHARACTERISTICS Turn-On Time t R L = Ω, C L = 3pF, V NO _ or V NC _ = 1.V, +2 C 3 Figure 1 T MIN to T MAX 3 ns Turn-Off Time t R L = Ω, C L = 3pF, V NO _ or V NC _ = 1.V, +2 C 1 2 Figure 1 T MIN to T MAX 2 ns Break-Before-Make (Note 8) ( Only) t BBM V NO _ and V NC _ = 1.V, +2 C 7 R L = Ω, C L = 3pF, Figure 1 T MIN to T MAX 2 ns Charge Injection Q V GEN =, R GEN =, C L = 1.nF, Figure 2 +2 C 21 pc NO_ or NC_ Off-Capacitance C f = 1MHz, Figure 3 +2 C 31 pf COM_ Off-Capacitance C COM _ () f = 1MHz, Figure 3 +2 C 3 pf COM_ On-Capacitance C COM _ () f = 1MHz, Figure 3 +2 C 7 pf Off-Isolation (Note 9) V ISO C L = pf, R L = Ω, f = 1MHz +2 C -1 Figure 4 f = 1MHz +2 C - db Crosstalk R L = Ω, f = 1MHz +2 C -7 C L = pf, Figure 4 f = 1MHz +2 C -8 db Total Harmonic Distortion DIGITAL I/O THD f = 2Hz to 2kHz, V COM_ = 2V P-P, R L = 32Ω +2 C.31 % Input Logic High V IH_ T MIN to T MAX 1.4 V Input Logic Low V IL_ T MIN to T MAX. V Input Leakage Current I V IN _ = or T MIN to T MAX µa POWER SUPPLY Power-Supply Range V Positive Supply Current I+ = 3.V, V IN _ = or 1 µa Maxim Integrated 3
4 // ELECTRICAL CHARACTERISTICS Single +1.8V Supply ( = +1.8V, V IH = +1V, V IL = +.4V, T A = T MIN to T MAX, unless otherwise noted. Typical values are at T A = +2 C.) (Notes 2, 3) ANALOG SWITCH PARAMETER SYMBOL CDITIS T A MIN TYP MAX UNITS Analog Signal Range V COM_, V NO _, V NC _ V On-Resistance (Note 4) R I COM _ = 1mA, = 1.8V, +2 C V NO _ or V NC _ =.9V T MIN to T MAX 3 Ω On-Resistance Match Between Channels (Notes 4, ) R = 1.8V, +2 C..2 I COM _ = 1mA, V NO _ or V NC _ =.9V T MIN to T MAX.2 Ω SWITCH DYNAMIC CHARACTERISTICS Turn-On Time t R L = Ω, C L = 3pF, V NO _ or V NC _ = 1.V, +2 C 2 3 Figure 1 T MIN to T MAX 3 Turn-Off Time t R L = Ω, C L = 3pF, V NO _ or V NC _ = 1.V, +2 C 2 2 Figure 1 T MIN to T MAX 3 ns ns Charge Injection Q V GEN =, R GEN =, C L = 1.nF, Figure 2 +2 C 8 pc DIGITAL I/O Input Logic High V IH _ T MIN to T MAX 1. V Input Logic Low V IL _ T MIN to T MAX.4 V Input Leakage Current I IN _ V IN _ = or T MIN to T MAX µa POWER SUPPLY Power-Supply Range V Positive Supply Current I+ V IN _ = or 1 µa Note 2: The algebraic convention is used in this data sheet; the most negative value is shown in the minimum column. Note 3: Parts are tested at +8 C and guaranteed by design and correlation over the full temperature range. Note 4: R and R matching specifications for QFN-packaged parts are guaranteed by design. Note : R = R (MAX) - R (MIN) Note : Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges. Note 7: Leakage parameters are 1% tested at the maximum-rated hot operating temperature and guaranteed by correlation at T A = +2 C. Note 8: Guaranteed by design, not production tested. Note 9: Off-Isolation = 2log 1 [V COM / (V NC or V NO )], V COM = output, V NC or V NO = input to off switch. 4 Maxim Integrated
5 // ( = +3V and T A = +2 C, unless otherwise noted.) Typical Operating Characteristics R (Ω) RESISTANCE vs. V COM = 1.8V = 2.V = 2.V = 2.7V = 3.V = 3.V = 3.3V toc1 R (Ω) RESISTANCE vs. V COM AND TEMPERATURE T A = -4 C T A = +8 C T A = +2 C toc2 TIME (ns) TURN-/TURN- TIME vs. SUPPLY VOLTAGE t t toc V COM (V) V COM (V) SUPPLY VOLTAGE (V) TIME (ns) TURN-/TURN- TIME vs. TEMPERATURE t t toc4 ICOM (pa) LEAKAGE CURRENT vs. TEMPERATURE toc Q (pc) CHARGE INJECTI vs. V COM = 3V toc 2 = +3.V TEMPERATURE ( C) = 3.V TEMPERATURE ( C) 1 = 1.8V V COM (V) RESPSE (db) FREQUENCY RESPSE 1 -RESPSE ISOLATI CROSSTALK FREQUENCY (MHz) toc7 LOGIC THRESHOLD (V) LOGIC THRESHOLD vs. SUPPLY VOLTAGE RISING.8 FALLING (V) toc8 Maxim Integrated
6 // Typical Operating Characteristics (continued) ( = +3V and T A = +2 C, unless otherwise noted.) TOTAL HARMIC DISTORTI vs. FREQUENCY = 3.V toc9 1 1 SUPPLY CURRENT vs. SUPPLY VOLTAGE AND TEMPERATURE T A = +8 C toc1.3 1 THD (%) I+ (na) 1.1 T A = +2 C T A = -4 C k 1k 1k FREQUENCY (Hz) (V) Pin Description PIN TSSOP QFN-EP TSSOP QFN-EP TSSOP QFN-EP 1, 3, 8, 11 1, 1, 7, 11 1, 3, 8, 11 1, 1, 7, 11 NAME NO1, NO2, NO3, NO4 NC1, NC2, NC3, NC4 FUNCTI Switch Normally Open Terminals Switch Normally Closed Terminals 3, 11 1, 11 NC2, NC4 Switch Normally Closed Terminals 1, 8 1, 7 NO1, NO3 Switch Normally Open Terminals 2, 4, 9, 1 1, 2, 8, 9 2, 4, 9, 1 1, 2, 8, 9 2, 4, 9, 1 1, 2, 8, 9 COM1, COM2,, COM Ground 13,,, 12 13, 4,, 12 13,,, 12 13, 4,, 12 13,,, 12 13, 4,, 12 IN1, IN2,, IN4 Switch Common Terminals Logic Control Inputs Positive Supply Voltage 3, 1 3, 1 3, 1 N.C. No Connection. Not internally connected. EP Exposed Pad (QFN Only). Connect EP to. Maxim Integrated
7 // Test Circuits/Timing Diagrams NO_ V NO_ V IH +.V % % t R < ns t F < ns COM_ Ω V COM_ 3pF V COM_ V NO_ 9% 9% t t V NC_ NC_ NO_ V NO_ V IH +.V COM_ Ω 3pF V COM_ V NO_ or V NC_ 9% 9% V COM_ t BBM t BBM t BBM = t (NO_) - t (NC_) OR t BBM = t (NC_) - t (NO_) Figure1. Switching Times Maxim Integrated 7
8 // Test Circuits/Timing Diagrams (continued) R GEN V IN NO_ OR NC_ COM_ V OUT C L 1pF V GEN AS REQUIRED NO_ OR NC_ COM_ 1MHz CAPACITANCE ANALYZER V IN Figure 3. NO_, NC_, and COM_ Capacitance V OUT V OUT V OUT IS THE MEASURED VOLTAGE DUE TO CHARGE TRANSFER ERROR Q WHEN THE CHANNEL TURNS. Q = V OUT x C L Figure 2. Charge Injection.1µF NO_ OR NC_ COM_ * V IN V OUT NETWORK ANALYZER Ω Ω MEAS REF Ω Ω MEASUREMENTS ARE STANDARDIZED AGAINST SHORT AT SOCKET TERMINALS. -ISOLATI IS MEASURED BETWEEN COM AND TERMINAL EACH SWITCH. -LOSS IS MEASURED BETWEEN COM AND TERMINAL EACH SWITCH. SIGNAL DIRECTI THROUGH SWITCH IS REVERSED; WORST VALUES ARE RECORDED. -ISOLATI = 2log V OUT V IN -LOSS = 2log V OUT V IN *ADD Ω TERMINATI FOR -ISOLATI Figure 4. Off-Isolation, On-Loss, and Crosstalk 8 Maxim Integrated
9 // Detailed Description The // are low.9ω max (at = 3V) on-resistance, low-voltage quad analog switches that operate from a +1.V to +3.V single supply. CMOS construction allows switching analog signals that are within the supply voltage range ( to ). When powered from a +3V supply, the.9ω (max) R allows high continuous currents to be switched in a variety of applications. Applications Information Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings because stresses beyond the listed ratings can cause permanent damage to the devices. Always sequence on first, followed by NO_, NC_, or COM_. If power-supply sequencing is not possible, add two small-signal diodes (D1, D2) in series with the supply pins for overvoltage protection (Figure ). Adding these diodes reduces the analog signal by one diode drop below and one diode drop above, but does not affect the low switch resistance and low leakage characteristics of the device. Device operation is unchanged, and the difference between and should not exceed 4V. V g COM POSITIVE SUPPLY Power-supply bypassing is needed to improve noise margin and to prevent switching noise propagation from the supply to other components. A.1µF capacitor, connected from to, is adequate for most applications. Logic Inputs The // logic inputs can be driven up to +3.V regardless of the supply voltage. For example, with a +1.8V supply, may be driven low to and high to +3.V. Driving rail-to-rail minimizes power consumption. Analog Signal Levels Analog signals that range over the entire supply voltage ( to ) can be passed with very little change in onresistance (see the Typical Operating Characteristics). The switches are bidirectional, so the NO_, NC_, and COM_ pins can be used as either inputs or outputs. Layout High-speed switches require proper layout and design procedures for optimum performance. Reduce stray inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are as close to the device as possible. Use large ground planes where possible. TRANSISTOR COUNT: 228 PROCESS: CMOS D2 NO Figure. Overvoltage Protection Using Two External Blocking Diodes D1 Chip Information Maxim Integrated 9
10 // Pin Configurations/Functional Diagrams/Truth Tables (continued) TOP VIEW COM1 NO1 IN NO IN4 COM2 N.C. IN COM1 NC1 IN1 NC IN4 7 8 COM1 1 NO IN1 13 NC IN4 11 NO4 COM NC4 COM2 2 1 N.C. N.C. 3 1 N.C. N.C. 3 *EP *EP *EP 9 COM4 IN2 4 9 COM4 IN NC4 N.C. COM4 7 8 NO3 QFN NC3 QFN NO3 QFN *CNECT EP TO *CNECT EP TO *CNECT EP TO INPUT LOW HIGH SWITCH STATE INPUT LOW HIGH SWITCH STATE INPUT LOW HIGH SWITCHES 1, 8 SWITCHES 2, 4 Package Information For the latest package outline information and land patterns (footprints), go to Note that a +, #, or - in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status. PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO. 14 TSSOP U QFN G Maxim Integrated
11 // Revision History REVISI NUMBER REVISI DATE DESCRIPTI PAGES CHANGED 2 1/13 Corrected packaging information 1, 2,, 1 13 Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance. Maxim Integrated 1 Rio Robles, San Jose, CA 9134 USA Maxim Integrated Products, Inc. Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
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