MAX4680CWE. Pin Configurations/Functional Diagrams/Truth Tables N01 N.C. COM1 V- MAX4690 COM2 IN2 N.C. NO2 SSOP/SO/DIP SWITCH 2 ON OFF 1 OFF

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1 ; Rev ; 7/99 General Description The dual analog switches feature low on-resistance of 1.25Ω max. On-resistance is matched between switches to.3ω max and is flat (.3Ω max) over the specified signal range. Each switch can handle Rail-to-Rail analog signals. Off-leakage current is only 5nA max at +85 C. These analog switches are ideal in low-distortion applications and are the preferred solution over mechanical relays in automatic test equipment or applications where current switching is required. They have low power requirements, require less board space, and are more reliable than mechanical relays. The has two NC (normally closed) switches, and the has two NO (normally open) switches. The has one NC and one NO switch and features guaranteed break-before-make switching. These devices operate from a +4.5V to +36V single supply or from ±4.5V to ±2V dual supplies. A separate logic supply pin guarantees TTL/CMOS-logic compatibility while operating across the entire supply voltage range. Reed Relay Replacement Test Equipment Communication Systems PBX, PABX Systems Applications Data Acquisition Systems Sample-and-Hold Circuits 1.25Ω, Dual SPST, Low On-Resistance (1.25Ω max) Guaranteed R ON Match Between Channels (.3Ω max) Guaranteed R ON Flatness Over Specified Signal Range (.3Ω max) Rail-to-Rail Signal Handling Guaranteed Break-Before-Make () +4.5V to +36V Single-Supply Operation ±4.5V to ±2V Dual-Supply Operation TTL/CMOS-Compatible Control Inputs >2kV ESD Protection per Method Features Ordering Information PART TEMP. RANGE PIN-PACKAGE CAE CWE CPE C to +7 C C to +7 C C to +7 C 16 SSOP 16 Wide SO 16 Plastic DIP EAE -4 C to +85 C 16 SSOP EWE -4 C to +85 C 16 Wide SO EPE -4 C to +85 C 16 Plastic DIP Ordering Information continued at end of data sheet. Pin Configurations/Functional Diagrams/Truth Tables TOP VIEW 1 16 NC N N1 IN IN IN COM COM COM COM COM COM2 IN2 7 1 IN2 7 1 IN NC2 8 9 NO2 8 9 NC1 SSOP/SO/DIP SSOP/SO/DIP SSOP/SO/DIP LOGIC SWITCH LOGIC SWITCH LOGIC SWITCH 1 ON OFF OFF 1 OFF 1 ON 1 ON SWITCH 2 ON OFF = NOT INTERNALLY CONNECTED SWITCHES SHOWN FOR LOGIC INPUT Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd. Maxim Integrated Products 1 For free samples & the latest literature: or phone For small orders, phone

2 ABSOLUTE MAXIMUM RATINGS to...-.3v to +44V to...+.3v to -44V to...-.3v to +44V to V to ( +.3V) All Other Pins to (Note 1)... ( -.3V) to ( +.3V) Continuous Current (COM_, NO_, NC_)... ±2mA Peak Current (COM_, NO_, NC_) (pulsed at 1ms, 1% duty cycle)... ±3mA Continuous Power Dissipation (T A = +7 C) SSOP (derate 7.1mW/ C above +7 C)...571mW Wide SO (derate 9.52mW/ C above +7 C)...762mW Plastic DIP (derate 1.53mW/ C above +7 C)...842mW Operating Temperature Ranges MAX4 C_E... C to +7 C MAX4 E_E...-4 C to +85 C Storage Temperature Range C to +15 C Lead Temperature (soldering, 1sec)...+3 C Note 1: Signals on NC_, NO_, COM_, or IN_ exceeding or are clamped by internal diodes. Limit forward diode current to maximum current rating. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Dual Supplies ( =, =, = +5V, V IN_H = +2.4V, V IN_L = +.8V,, unless otherwise noted. Typical values are at.) (Note 2) PARAMETER ANALOG SWITCH Input Voltage Range (Note 3) COM_ to NO_ or NC_ On-Resistance COM_ to NO_ or NC_ On-Resistance Match Between Channels (Notes 3, 4) SYMBOL V COM_, V NO_, V NC_ R ON R ON CONDITIONS I COM_ = 1mA, V NO_ or V NC_ = ±1V, I COM_ = 1mA, V NO_ or V NC_ = ±1V MIN TYP MAX UNITS V Ω Ω COM_ to NO_ or NC_ On-Resistance Flatness (Notes 3, 5) R FLAT(ON) I COM_ = 1mA; V NO_ or V NC_ = -5V,, 5V Ω Off-Leakage Current (NO_ or NC_) (Note 6) I NO_,I NC_ V COM_ = ±1V, V NO_ or V NC_ = +1V na COM_ Off-Leakage Current (Note 6) I COM_(OFF) V COM_ = ±1V, V NO_ or V NC_ = +1V na COM_ On-Leakage Current (Note 6) I COM_(ON) V COM_ = ±1V, V NO_ or V NC_ = ±1V or floating na LOGIC INPUT Input Current with Input Voltage High Input Current with Input Voltage Low I IN_H I IN_L IN_ = 2.4V, all others =.8V IN_ =.8V, all others = 2.4V

3 ELECTRICAL CHARACTERISTICS Dual Supplies (continued) ( =, =, = +5V, V IN_H = +2.4V, V IN_L = +.8V,, unless otherwise noted. Typical values are at.) (Note 2) PARAMETER Logic Input Voltage High Logic Input Voltage Low POWER SUPPLY Power-Supply Range Positive Supply Current Negative Supply Current Logic Supply Current Ground Current Break-Before-Make Time ( only) Off-Isolation (Note 7) Crosstalk (Note 8) NC_ or NO_ Capacitance COM Off-Capacitance On-Capacitance SYMBOL V IN_H V IN_L I+ I- I L I SWITCH DYNAMIC CHARACTERISTICS Turn-On Time Turn-Off Time Charge Injection t ON t OFF t OPEN Q V ISO V CT C OFF C COM C COM V IN_ = or 5V V IN_ = or 5V V IN_ = or 5V V IN_ = or 5V V COM_ = ±1V, Figure 2 V COM_ = ±1V, Figure 2 V COM_ = ±1V, Figure 3, R L = 5Ω, C L = 5pF, f = 1MHz, Figure 5 R L = 5Ω, C L = 5pF, f = 1MHz, Figure 6 f = 1MHz, Figure 7 f = 1MHz, Figure 7 f = 1MHz, Figure 8 CONDITIONS C L = 1.nF, V GEN =, R GEN =, Figure 4 MIN TYP MAX ±4.5 ± UNITS V V V ns ns ns pc db db pf pf pf 3

4 ELECTRICAL CHARACTERISTICS Single Supply ( = +12V, =, = +5V, V INH = 2.4V, V INL =.8V,, unless otherwise noted. Typical values are at.) (Note 2) PARAMETER ANALOG SWITCH Input Voltage Range (Note 3) COM_ to NO_ or NC_ On-Resistance COM_ to NO_ or NC_ On-Resistance Match Between Channels (Notes 3, 4) COM_ to NO_ or NC_ On-Resistance Flatness (Notes 3, 5) Off-Leakage Current (NO_ or NC_) (Notes 6, 9) COM_ Off-Leakage Current (Notes 6, 9) COM_ On-Leakage Current (Notes 6, 9) LOGIC INPUT Input Current with Input Voltage High SYMBOL V COM_, V NO_, V NC_ R ON R ON R FLAT(ON) I NO_,I NC_ I COM_(OFF) I COM_(ON) I IN_H I COM_ = 1mA, V NO_ or V NC_ = 1V I COM_ = 1mA, V NO_ or V NC_ = 1V CONDITIONS I COM_ = 1mA; V NO_ or V NC_ = 3V, 6V, 9V V COM_ = 1V, 1V; V NO_ or V NC_ = 1V, 1V V NO_ or V NC_ = 1V, 1V; V COM_ = 1V, 1V V COM_ = 1V, 1V; V NO_ or V NC_ = 1V, 1V, or floating IN_ = 2.4V, all others =.8V MIN TYP MAX Input Current with Input Voltage Low I IN_L IN_ =.8V, all others = 2.4V Logic Input Voltage High V IN_H 2.4 V Logic Input Voltage Low V IN_L.8 V POWER SUPPLY Power-Supply Range V Positive Supply Current I+ V IN_ = or 5V Logic Supply Current I L V IN_ = or 5V Ground Current I V IN_ = or 5V UNITS V Ω Ω Ω na na na 4

5 ELECTRICAL CHARACTERISTICS Single Supply (continued) ( = +12V, =, = +5V, V IN_H = 2.4V, V IN_L =.8V,, unless otherwise noted. Typical values are at.) (Note 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS SWITCH DYNAMIC CHARACTERISTICS Turn-On Time (Note 3) t ON V COM_ = 1V, Figure 2 5 ns Turn-Off Time (Note 3) t OFF V COM_ = 1V, 1 25 Figure 2 35 ns Break-Before-Make Time (Note 3) t OPEN V COM_ = 1V, Figure 3, ns C L = 1.nF, V GEN =, R GEN =, Charge Injection Q -6 pc Figure 4 Crosstalk (Note 8) V CT R L = 5Ω, C L = 5pF, f = 1MHz, Figure 6-65 db NC_ or NO_ Capacitance C OFF f = 1MHz, Figure pf COM Off-Capacitance C COM f = 1MHz, Figure pf On-Capacitance C COM f = 1MHz, Figure pf Note 2: The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in this data sheet. Note 3: Guaranteed by design. Note 4: R ON = R ON(MAX) - R ON(MIN). Note 5: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal range. Note 6: Leakage parameters are 1% tested at maximum-rated hot temperature and guaranteed by correlation at +25 C. Note 7: Off-isolation = 2log 1 [V COM / (V NC or V NO )], V COM = output, V NC or V NO = input to off switch. Note 8: Between any two switches. Note 9: Leakage testing at single supply is guaranteed by testing with dual supplies. (, unless otherwise noted.) Typical Operating Characteristics ON-RESISTANCE vs. V COM (DUAL SUPPLIES), = ±5V TOC ON-RESISTANCE vs. V COM AND TEMPERATURE (DUAL SUPPLIES) T A = +85 C, = ±15V TOC2 5 4 ON-RESISTANCE vs. V COM (SINGLE SUPPLY) = +5V = TOC3 RON (Ω) , = ±15V RON (Ω) RON (Ω) 3 2 = +12V V COM (V), = ±2V.6 T A = -4 C V COM (V) 1 = +24V V COM (V) 5

6 (, unless otherwise noted.) RON (Ω) ON-RESISTANCE vs. V COM AND TEMPERATURE (SINGLE SUPPLY) T A = -4 C T A = +85 C V COM (V) I+, I- (na) 1, = +12V = TOC4 LEAKAGE (na) Typical Operating Characteristics (continued) = = POWER-SUPPLY CURRENT vs. TEMPERATURE = = I+ ON/OFF-LEAKAGE vs. TEMPERATURE ON-LEAKAGE TEMPERATURE ( C) TEMPERATURE ( C) I- TOC7 OFF-LEAKAGE LOSS (db) TOC5 Q (pc) FREQUENCY RESPONSE ON-RESPONSE ON-PHASE OFF-ISOLATION TOC 8-7 = = INPUT = dbm 5Ω IN AND OUT FREQUENCY (MHz) CHARGE INJECTION vs. V COM = = V COM (V) = +12V = PHASE (degrees) -6 6

7 1, 3, 6, 8, 1, 15 PIN 1, 3, 6, 8, 1, 15 1, 3, 6, 8, 1, 15 2, 7 2, 7 2, 7 NAME IN1, IN Ground Logic-Control Digital Inputs FUNCTION 9, 16 NC2, NC1 Analog Switch Normally Closed Terminals Positive Analog Supply Input 9, 16 NO2, NO1 Analog Switch Normally Open Terminals 9 NC1 Analog Switch Normally Closed Terminal 16 NO1 Analog Switch Normally Open Terminal Pin Description No connection. Not internally connected. Connect to or lowimpedance point to improve on/off-isolation. Negative Analog Supply Voltage Input. Connect to for singlesupply operation. 11, 14 11, 14 11, 14 COM2, COM1 Analog Switch Common Terminals Logic Supply Input 7

8 Applications Information Overvoltage Protection Proper power-supply sequencing is recommended for all CMOS devices. Do not exceed the absolute maximum ratings because stresses beyond the listed ratings can cause permanent damage to the devices. Always sequence on first, then, followed by the logic inputs, NO, or COM. If power-supply sequencing is not possible, add two small signal diodes (D1, D2) in series with the supply pins and a Schottky diode between and for overvoltage protection (Figure 1). Adding diodes reduces the analog signal range to one diode drop below and one diode drop above, but does not affect the devices low switch resistance and low-leakage characteristics. Device operation is unchanged, and the difference between and should not exceed 44V. SWITCH INPUT V COM_ COM_ NO_ OR NC_ IN_ +5V R L 1Ω SWITCH OUTPUT C L 35pF V O COM_ +3V 5% * * D1 D2 * * NO_ * INTERNAL PROTECTION DIODES Figure 1. Overvoltage Protection Using External Blocking Diodes LOGIC INPUT t OFF tr < 2ns tf < 2ns LOGIC INPUT REPEAT TEST FOR EACH SWITCH. FOR LOAD CONDITIONS, SEE Electrical Characteristics. C L INCLUDES FIXTURE AND STRAY CAPACITANCE. R L V O = V COM ( ) R L + R ON SWITCH OUTPUT V O t ON.9V.9V LOGIC INPUT WAVEFORMS INVERTED FOR SWITCHES THAT HAVE THE OPPOSITE LOGIC SENSE. Figure 2. Switching-Time Test Circuit 8

9 LOGIC INPUT V COM1 V COM2 COM1 COM2 IN_ R L2 C L INCLUDES FIXTURE AND STRAY CAPACITANCE. V OUT2 Figure 3. Break-Before-Make Interval ( only) NO NC C L2 R L = 1Ω C L = 35pF R L1 V OUT1 C L1 LOGIC INPUT SWITCH OUTPUT 1 (V OUT1 ) SWITCH OUTPUT 2 (V OUT2 ) +3V V V V 5% t D.9 V UT1 t D.9 V OUT2 V GEN R GEN +5V COM_ IN NC_ OR NO_ C L V O V O V IN OFF ON V O OFF V IN = +3V V IN OFF ON Q = ( V O )(C L ) OFF V IN DEPENDS ON SWITCH CONFIGURATION; INPUT POLARITY DETERMINED BY SENSE OF SWITCH. Figure 4. Charge-Injection Test Circuit 9

10 SIGNAL GENERATOR dbm ANALYZER R L COM_ NC_ OR NO_ Figure 5. Off-Isolation Test Circuit +5V IN_ OR +3.V SIGNAL GENERATOR dbm ANALYZER OR +3.V R L COM1 IN1 N_2 Figure 6. Crosstalk Test Circuit +5V N_1 IN2 COM2 5Ω NC OR +3.V +5V +5V CAPACITANCE METER f = 1MHz COM_ NC_ OR NO_ IN_ OR +3.V CAPACITANCE METER f = 1MHz COM_ NC_ OR NO_ IN_ OR +3.V Figure 7. Switch Off-Capacitance Test Circuit Figure 8. Switch On-Capacitance Test Circuit 1

11 Ordering Information (continued) PART TEMP. RANGE PIN-PACKAGE CAE CWE CPE C to +7 C C to +7 C C to +7 C 16 SSOP 16 Wide SO 16 Plastic DIP EAE -4 C to +85 C 16 SSOP EWE -4 C to +85 C 16 Wide SO EPE -4 C to +85 C 16 Plastic DIP CAE C to +7 C 16 SSOP CWE C to +7 C 16 Wide SO CPE C to +7 C 16 Plastic DIP EAE -4 C to +85 C 16 SSOP EWE -4 C to +85 C 16 Wide SO EPE -4 C to +85 C 16 Plastic DIP Chip Information TRANSISTOR COUNT: 18 Package Information SSOP.EPS 11

12 Package Information (continued) SOICW.EPS Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 12 Maxim Integrated Products, 12 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.