High-Speed Quad Monolithic SPST CMOS Analog Switch. Features Benefits Applications. Fast Settling Times Reduced Switching Glitches High Precision
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1 DG High-Speed Quad Monolithic SPST CMOS Analog Switch Features Benefits Applications Fast Switching t ON : ns Low Charge Injection: 9 pc Low r DS(on) : 3 TTL Compatible Low Leakage: pa Fast Settling Times Reduced Switching Glitches High Precision High Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Description The DG high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. Built on Siliconix proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. Functional Block Diagram and Pin Configuration Dual-In-Line and SOIC IN IN Key LCC D IN IN D 3 9 D S S D IN D S S 3 D 3 IN 3 Top View S S S S D IN IN 3 D 3 Top View Ordering Information Truth Table Temp Range Package Part Number Logic Switch to C -Pin Plastic DIP DGCJ ON to C -Pin Narrow SOIC DGDY OFF DGAK -Pin CerDIP DGAK/3 Logic. V Logic V to C 9-MEA Switches Shown for Logic Input LCC- DGAZ/3 9-MA Switches Shown for Logic Input P-3 Rev. B (//93)
2 Absolute Maximum Ratings to V to V Digital Inputs a V S, V D () V to () + V or ma, whichever occurs first Current, Any Terminal Except S or D ma Continuous Current, S or D ma Peak Current, S or D (Pulsed at ms, % duty cycle max) ma Storage Temperature (AK, AZ, DY Suffix) to C (CJ Suffix) to C Power Dissipation (Package) b -Pin Plastic DIP c mw -Pin Plastic Narrow SOIC d mw -Pin CerDIP e mw LCC- f mw Notes: a. Signals on S X, D X, or IN X exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate. mw/ C above C d. Derate. mw/ C above C e. Derate mw/ C above C f. Derate mw/ C above C Specifications a Parameter Analog Switch Symbol Conditions Unless Otherwise Specified = V, = V A Suffix to C C, D Suffix to C to C V IN = V,. V f Temp b Typ c Min d Max d Min d Max d Unit Analog Signal Range e V ANALOG V Drain-Source On-Resistance r DS(on) I S = ma, V D = V 3 Switch Off Leakage Current I S(off) I D(off) V D = V, V S = V.. na Channel On Leakage Current I D(on) + I S(on) V S = V D = V. Digital Control V IN = V Input Current with Voltage High I INH V IN = V.. A Input Current with Voltage Low I INL V IN = V. Dynamic Characteristics Turn-On Time t ON V S = V See Figure Turn-Off Time t OFF ns Charge Injection Q C L = pf, V gen = V R gen = 9 pc P-3 Rev. B (//93)
3 DG Specifications a Parameter Symbol Conditions Unless Otherwise Specified = V, = V A Suffix to C C, D Suffix to C to C V IN = V,. V f Temp b Typ c Min d Max d Min d Max d Unit Dynamic Characteristics (Cont d) Source Off Capacitance C S(off) VS = V, V = V S IN Drain Off Capacitance C f = MHz D(off) pf Channel On Capacitance C D ( on) V D = V S = V, V IN = V Off Isolation OIRR Crosstalk X TALK R L = f=mhz Supply 9 db Positive Supply Current I+ Negative Supply Current I All Channels On or Off ma Notes: a. Refer to PROCESS OPTION FLOWCHART (Section of the 99 Data Book or FaxBack number 3). b. = C, = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. Typical Characteristics r DS(on) vs. V D and Power Supply Voltage Leakage Currents vs. Analog Voltage r DS(on) Drain-Source On-Resistance ( ) T A = C I S = ma V. V V V Leakage Current (pa) I D(off) or I S(off) I D(on) T A = C V D Drain Voltage (V) V ANALOG Analog Voltage (V) P-3 Rev. B (//93) 3
4 Typical Characteristics (Cont d) (V) VT..... Input Switching Threshold ÉÉ É É ÉÉ É I+, I (ma) 3 Supply Current vs. Switching Frequency I+ I k k k M, Positive and Negative Supplies (V) Switching Frequency (Hz) DS(on) Drain-Source On-Resistance ( ) 3 r DS(on) vs. V D and Temperature = V = V C C C C Leakage na na pa Leakage Currents vs. Temperature I D(on) I S(off), I D(off) pa 3 V D Drain Voltage (V) Temperature ( C) 9 Switching Times vs. Temperature Switching Times vs. Power Supply Voltage = V = V Switching Time (ns) t (on) t (off) Switching Time (ns) 3 3 Temperature ( C) Positive Supply (V) P-3 Rev. B (//93)
5 DG Schematic Diagram (Typical Channel) S + IN X D Figure. Test Circuits + V Logic Input V V % t r < ns t f < ns V S D V O Switch Input V S V O 9% t OFF IN V R L k C L 3 pf Switch Output V O t ON V C L (includes fixture and stray capacitance) R V L O = V S R L + r DS(on) Figure. Switching Time P-3 Rev. B (//93)
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