Precision Monolithic Quad SPST CMOS Analog Switches

Transcription

1 Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION The DG4 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (.33 μw) with high speed (t ON : ns), the DG4 family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG4 series was built on ishay Siliconix's newest high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG4, DG42 respond to opposite control logic as shown in the Truth Table. The DG43 has two normally open and two normally closed switches. FEATURES 35 supply max. rating ± 5 analog signal range On-resistance - R DS(on) :.5 Fast switching - t ON : ns Ultra low power - P D :.33 μw TTL, CMOS compatible Single supply capability Material categorization: For definitions of compliance please see BENEFITS Widest dynamic range Low signal errors and distortion Break-before-make switching action Simple interfacing APPLICATIONS Medical and Healthcare equipment Precision data acquisition Communication systems Battery powered systems Computer peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG4 DG4EN QFN-6 (4 x 4) D IN IN2 D S 2 S2-2 Top iew GND 3 N.C. S4 4 9 S3 DG4EQ TSSOP IN 6 IN2 D 2 5 D2 S 3 4 S2-4 3 Top iew GND 5 2 N.C. S4 6 S3 D4 7 D3 IN4 8 9 IN D4 IN4 IN3 D3 TRUTH TABLE - DG4 Note Switches Shown for Logic Input LOGIC SWITCH On Off S3-89-Rev. A, 22-Apr-3 Document Number: 62749

2 FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG42 DG42EN QFN-6 (4 x 4) D IN IN2 D S 2 S2-2 Top iew GND 3 N.C. S4 4 9 S3 IN D S - GND Top iew IN2 D2 S2 N.C. S4 D4 IN DG42EQ TSSOP 9 S3 D3 IN D4 IN4 IN3 D3 TRUTH TABLE - DG42 Note Switches Shown for Logic Input LOGIC SWITCH Off On FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION - DG43 DG43EN QFN-6 (4 x 4) D IN IN2 D S 2 S2-2 Top iew GND 3 N.C. S4 4 9 S3 IN D S IN2 D2 S2 GND S4 D DG43EQ TSSOP Top iew 2 N.C. S3 D3 IN4 8 9 IN D4 IN4 IN3 D3 TRUTH TABLE - DG43 Note Switches Shown for Logic Input LOGIC SWITCHES, 4 SWITCHES 2, 3 Off On On Off S3-89-Rev. A, 22-Apr-3 2 Document Number: 62749

3 DEICE OPTIONS PART NUMBER CONFIGURATION SWITCH FUNCTION TEMPERATURE RANGE PACKAGE DG4EN-T-GE4 Quad SPST NC - 4 C to + 25 C QFN(4x4) 6L (ariation 2) DG42EN-T-GE4 Quad SPST NO - 4 C to + 25 C QFN(4x4) 6L (ariation 2) DG43EN-T-GE4 Quad SPST NC/NO - 4 C to + 25 C QFN(4x4) 6L (ariation 2) DG4EQ-T-GE3 Quad SPST NC - 4 C to + 25 C TSSOP-6 DG42EQ-T-GE3 Quad SPST NO - 4 C to + 25 C TSSOP-6 DG43EQ-T-GE3 Quad SPST NC/NO - 4 C to + 25 C TSSOP-6 ABSOLUTE MAXIMUM RATINGS ELECTRICAL PARAMETER CONDITIONS LIMITS UNIT Reference to GND -.3 to Reference to GND +.3 to - 25 to Analog Inputs (S or D) - (-.3 ) to (+.3 ) Digital Inputs GND (-.3 ) to (+.3 ) TSSOP-6, T A = 25 C 9 Maximum Continuous Switch Current QFN(4x4) 6L, T A = 25 C 25 TSSOP-6, T A = 25 C 9 ma QFN(4x4) 6L, T A = 25 C Maximum Pulse Switch Current Pulse at ms, % duty cycle 5 Thermal Resistance TSSOP-6 3 QFN(4x4) 6L 32 C/W Temperature Operating Temperature - 4 to 25 Max. Operating Junction Temperature 5 Operating Junction Temperature 25 C Storage Temperature - 65 to 5 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE ELECTRICAL MINIMUM MAXIMUM UNIT IN ± 4.5 ± 6.5 S3-89-Rev. A, 22-Apr-3 3 Document Number: 62749

4 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5, - = - 5 INH = 2, INL = C - 4 C to + 85 C - 4 C to + 25 C TYP/MAX. Analog Switch Analog Signal Range ANALOG - to - Drain-Source R S = ±, I S = - ma; see fig Typ. On-Resistance DS(on) = + 3.5, - = Max. ON-Resistance Flatness R flat(on) S = ±, I S = - ma Max. ON-Resistance Matching R DS(on) Max. = + 6.5, - = ± Typ. Switch Off Leakage Current I S /I d(off) S = ±, D = ± ; see fig. 24 ±.55 ± 2 ± 2.5 Max. ± Typ. Channel On Leakage Current I d(on) S = D = ± ; see fig. 25 ± 2 ± 4 ± 35 Max. na Digital Control Input, High oltage INH min. Input, Low oltage INL max. Input Leakage I IN IN = GND or Typ, - - ±. Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S = S2 =, see fig. 3; Typ. OPEN R L = 3, C L = 35 pf - Min. Turn-On Time t ON S =, see fig Typ, Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf Typ, Max. C Charge Injection Q L = nf, R GEN =, S = INj see fig Typ. pc Off Isolation OIRR C L = 5 pf, R L = 5, khz Typ. Cross Talk X TALK C L = 5 pf, R L = 5, MHz Typ. db Insertion Loss f = MHz, R L = 5, C L = 5 pf Typ. Total Harmonic Distortion THD R L =, 5 p-p, f = 2 Hz to 2 khz Typ. % Bandwidth, -3dB BW C L = 5 pf, R L = Typ. MHz Source Off Capacitance C S(off) - - Typ. Drain Off Capacitance C D(off) f = MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND = ± 4.5/± 6.5 min./max. Power Supply Current I+ Digital Input or = + 6.5, - = Digital Input = 5 I- Digital Input or. - - Typ. - Max Typ Max Typ. - Max. UNIT μa S3-89-Rev. A, 22-Apr-3 4 Document Number: 62749

5 ELECTRICAL CHARACTERISTICS - SINGLE 2 SUPPLY PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 2, - = INH = 2, INL = C - 4 C to + 85 C - 4 C to + 25 C TYP/MAX. UNIT Analog Switch Analog Signal Range ANALOG to Drain-Source R S = to, I S = - ma; Typ. On-Resistance DS(on) see fig. 23, =.8, - = Max Typ. ON-Resistance Flatness R flat(on) S = to, I S = - ma..2.3 Max Typ. ON-Resistance Matching R on Max. =.8, - = ± Typ. Switch Off Leakage Current I S /I d(off) S = /, D = / see fig. 24 ±.55 ± 2 ± 2.5 Max. na Channel On Leakage Current I d(on) S = D = / ; see fig. 25 ± Typ. ±.5 ± 4 ± 3 Max. Digital Control Input, High oltage INH Min. Input, Low oltage INL Max. Input Leakage I IN IN = GND or. - - Typ. - - ±. Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S = S2 = 8 ; see fig. 3, - - Typ. OPEN R L = 3, C L = 35 pf Min. Turn-On Time t ON S = 8 ; see fig. 3, Typ. Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf - - Typ Max. C Charge Injection Q L = nf, R GEN =, S = 6 INj see fig Typ. pc Off Isolation OIRR khz Typ. R L = 5, C L = 5 pf Cross Talk X TALK MHz Typ. db Insertion Loss f = MHz, R L = 5, C L = 5 pf Typ. Bandwidth, -3dB BW R L = 5, C L = 5 pf Typ. MHz Source Off Capacitance C S(off) Typ. Drain Off Capacitance C D(off) f = MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND =, - = ± 5/± 6.5 min./max. Power Supply Current I+ Digital Input or = 3.2 Digital Input = Typ. - - Max Typ Max. μa S3-89-Rev. A, 22-Apr-3 5 Document Number: 62749

6 ELECTRICAL CHARACTERISTICS - DUAL ± 5 SUPPLIES PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5, - = - 5 INH = 2, INL = C - 4 C to + 85 C - 4 C to + 25 C TYP/MAX. UNIT Analog Switch Analog Signal Range ANALOG to Drain-Source R S = ± 4.5, I S = - ma; see fig. 23, Typ. On-Resistance DS(on) = + 4.5, - = Max. ON-Resistance Flatness R flat(on) S = ± 4.5, I S = - ma Typ Max Typ. ON-Resistance Matching R on Max. = + 5.5, - = - 5.5, ± Typ. Switch Off Leakage Current I S /I d(off) S = +/- 4.5, D = -/+ 4.5 ; see fig. 24 ±.55 ± 2 ± 2.5 Max. na Channel On Leakage Current I d(on) S = D = ± 4.5 ; see fig. 25 ± Typ. ± ± 4 ± 3 Max. Digital Control Input, High oltage INH Min. Input, Low oltage INL Max. Input Leakage I IN IN = GND or. - - Typ. - - ±. Max. μa Digital Input Capacitance C IN Typ. pf Dynamic Characteristics Break-Before-Make Time t S = S2 = 3 ; see fig. 3, - - Typ. OPEN R L = 3, C L = 35 pf Min. Turn-On Time t ON S = 3 ; see fig. 3, Typ. Max. ns Turn-Off Time t OFF R L = 3, C L = 35 pf Typ Max. C Charge Injection Q L = nf, R GEN =, S = ; INj see fig Typ. pc Off Isolation OIRR KHz Typ. R L = 5, C L = 5 pf Cross Talk X TALK MHz Typ. db Insertion Loss f = MHz, R L = 5, C L = 5 pf Typ. Bandwidth, -3dB BW R L = 5, C L = 5 pf Typ. MHz Source Off Capacitance C S(off) Typ. Drain Off Capacitance C D(off) f = MHz, S = Typ. pf Drain On Capacitance C D(on) Typ. Power Requirements Power Supply Range GND = ± 4.5 /± 6.5 min./max. Power Supply Current I+ Digital Input or = + 5.5, - = I- Digital Input = or. - - Typ. - - Max Typ. - - Max. μa maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S3-89-Rev. A, 22-Apr-3 6 Document Number: 62749

7 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) = + = +2 - = = = -4.5 = +5 - = -5 R ON - On-Resistance (Ω) = = -3.5 T A = +25 C I S = -ma = +5 - = -5 = = R ON - On-Resistance (Ω) = = -5.5 = +7 - = -7 T A = +25 C I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Analog oltage (DS) On-Resistance vs. Analog oltage (DS2) = C R ON - On-Resistance (Ω) = 8 =.8 = 2 R ON - On-Resistance (Ω) C + 25 C - 4 C T A = +25 C I S = -ma = 3.2 = = +5 - = -5 I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Analog oltage (DSS) On-Resistance vs. Temperature (± 5 ) C + 85 C C + 85 C R ON - On-Resistance (Ω) C C. = = -5 I S = -ma R ON - On-Resistance (Ω) C C. = = I S = -ma D - Analog oltage () D - Analog oltage () On-Resistance vs. Temperature (± 5 ) On-Resistance vs. Temperature (+ 2 ) S3-89-Rev. A, 22-Apr-3 7 Document Number: 62749

8 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Leakage Current (na) I D(OFF), D =+ I S(OFF), S = - I D(OFF), D = - I S(OFF), S = + I D(ON), D = + Leakage Current (na) I D(OFF), D = +4.5 I S(OFF), S = -4.5 I D(OFF), D = -4.5 I S(OFF), S = +4.5 I D(ON), D = = = - 5 I D(ON), D = - -2 I D(ON), D = Temperature ( C) Temperature ( C) Leakage Current vs. Temperature (± 5 ) Leakage Current vs. Temperature (± 5 ) Leakage Current (na) I D(OFF), D = + I S(OFF), S = + I D(OFF), D = + I S(OFF), S = + I D(ON), D = + I D(ON), D = + I+ - Supply Current (μa) = = -5.5 = = T A = + 25 C I+ per Logic Input = = Temperature ( C) IN - () Leakage Current vs. Temperature (+ 2 ) Supply Current vs. Logic Level Q INJ - Charge Injection (pc) = = - 5 = +5 - = S - Analog oltage () = +2 - = GND Charge Injection vs. Analog oltage t ON(EN), t OFF(EN) - Switching Time (ns) 4 35 = +2, - =, t ON = +5, - = -5, t ON 5 5 = +2, - =, t OFF = +5, - = -5, t OFF Temperature ( C) Switching Time vs. Temperature S3-89-Rev. A, 22-Apr-3 8 Document Number: 62749

9 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Loss.6 T A = +25 C - Loss, OIRR, X TALK (db) = +5 - = -5 R L = 5 Ω OIRR X TALK T - Logic Threshold ().4.2 IH IL Frequency (Hz) - Supply oltage () BW, OIRR, X TALK vs. Frequency Logic Threshold vs. Supply oltage = = -5.5 T A = + 25 C I + = = -6.5 T A = + 25 C I + Supply Current (μa)... I GND I - Supply Current (μa).. I GND I -.. Input Switching Frequency (Hz) Supply Current vs. Switching Frequency (± 5.5 ).. Input Switching Frequency (Hz) Supply Current vs. Switching Frequency (± 6.5 ) THD + N (%) s=2 P-P s= P-P s=5 P-P = = - 5 THD + N (%)... s=2.5 P-P s= P-P = = - 5 s=5 P-P Frequency (Hz) Frequency (Hz) THD vs. Frequency (± 5 ) THD vs. Frequency (± 5 ) S3-89-Rev. A, 22-Apr-3 9 Document Number: 62749

10 TEST CIRCUITS Logic Input INH 5 % t r < 5 ns t f < 5 ns Switch Input Logic Input IN GND S D Switch Output R L 3 Ω OUT C L 35 pf Switch Output INL.9 x OUT t ON t OFF C L (includes fixture and stray capacitance) R OUT = L D R L + R ON Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Fig. - Switching Time gen + R gen IN D S OUT C L = nf OUT IN On OUT Off On GND Q = OUT x C L IN = - IN depends on switch configuration: input polarity determined by sense of switch. Fig. 2 - Charge Injection nf nf S IN, 2.4 D R L D GND, 2.4 IN S Meter HP492A Impedance Analyzer or Equivalent Analyzer GND f = MHz Off Isolation = 2 log D S Fig. 3 - Off-Isolation Fig. 4 - Channel Off/On Capacitance S3-89-Rev. A, 22-Apr-3 Document Number: 62749

11 QFN 4x4-6L Case Outline Package Information (5) (4) ARIATION ARIATION 2 DIM MILLIMETERS () INCHES MILLIMETERS () INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A A A3.2 ref..8 ref..2 ref..8 ref. b D 4. BSC.57 BSC 4. BSC.57 BSC D e.65 BSC.26 BSC.65 BSC.26 BSC E 4. BSC.57 BSC 4. BSC.57 BSC E K.2 min..8 min..2 min..8 min. L N (3) Nd (3) Ne (3) Notes () Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y4.5M (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between.5 mm and.3 mm from terminal tip. (5) The pin identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max..5 mm. ECN: S3-893-Rev. B, 22-Apr-3 DWG: 589 Revision: 22-Apr-3 Document Number: 792 For technical questions, contact: powerictechsupport@vishay.com

12 Package Information TSSOP: 6-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A -..2 A.5..5 A B C D E E e L L.9.. y - -. θ 3 6 ECN: S-692-Rev. D, 23-Oct-6 DWG: 5624 Document Number: Oct-6

13 PAD Pattern RECOMMENDED MINIMUM PAD FOR TSSOP-6.93 (4.9).55 (.4).28 (7.5).7 (4.35).4 (.35).26 (.65).2 (.3) Recommended Minimum Pads Dimensions in inches (mm) Revision: 2-Sep- Document Number: 6355

14 AN55 RECOMMENDED MINIMUM PADS FOR QFN-6 (4 x 4 MM BODY) C X E 2 C2 Y2 2 3 Keep Out Zone X Y Inches Millimeters C C E X.4.35 X Y Y Note: QFN-6 (4 x 4) has an exposed center pad that must not come into contact with any metalized structure on the PCB. This area is considered a Keep Out Zone. Document Number: Apr-7

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