BF94N60/BF94N60L. 600V N-Channel MOSFET. General Description

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1 600V N-Channel MOSFET General Description The N-Channel enhancement mode power field effect transistor is produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features V DS =600 V =4A R DS(ON) =.9 Ω TYP( =V, =2A) Low C RSS (typical 7.0pF) Fast switching Absolute Maximum Ratings Symbol Parameter BF94N60L BF94N60 Unit V DS Drain-Source Voltage 600 V Drain Current(continuous)at Tc=25 C 4 A M Drain Current (pulsed) (Note) 6 A Gate-Source Voltage ±30 V E AS SinglePulseAvalanche Energy (Note2) 70 mj I AR Avalanche Current (Note) 4 A E AR RepetitiveAvalancheEnergy (Note) mj dv/dt PeakDiodeRecoverydv/dt (Note3) 5 V/ns P D Power Dissipation (T C = 25 C) W Tstg Storage Temperature Range -55 to +50 C T L Maximum Lead Temperature for Soldering Purpose 300 C Datasheet TS-MOS-PD-006 Rev.A/0 Page of 9

2 Ordering Information Part Number Package Packaging BF94N60 TO-220F Tube BF94N60L TO-220 Tube Thermal Data Symbol Parameter TO-220F TO-220 Unit Rthj-case Thermal Resistance Junction-case C /W Rthj-amb Thermal Resistance Junction-ambient C /W Electrical Characteristics(T c = 25 ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-Source Breakdown Voltage =250uA, =0 600 V SS I GSS Zero Gate Voltage V DS =600V, =0V ua Drain Current V DS =600V, =0V,Tc=25 ua Gate-Body Leakage Current =±30V,V DS =0V ±0 na (th) Gate Threshold Voltage V DS =, =250uA V R DS(on) Static Drain-Source On Resistance =V, =2A Ω C iss Input Capacitance 550 pf C oss Output Capacitance V DS =25V,f=MHZ, =0V 60 pf Reverse Transfer Capacitance 7.0 pf C rss t d(on) Turn-On Delay Time 20 ns t r Rise Time V DD =300V =2A 7 ns t d(off) Turn-Off Delay Time =V,R G =4.7Ω (Note4,5) 47 ns t f Fall Time 8 ns Q g Total Gate Charge 20 nc Q gs Gate-Source Charge V DD =480V, =4A =V (Note4,5) 5.0 nc Gate-Drain Charge 5.7 nc Q gd V SD (*) Forward On Voltage I F =4A =0V V T rr Reverse Recovery Time V DD =300V,I F =4A,di/dt=0A/us (Note4). Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 20mH, I AS = 4A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 4 A, di/dt 200A/μs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test : Pulse width 300μs, Duty cycle 2% 5. Essentially independent of operating temperature (*).Pulsed:Pulse duration 280 ns Datasheet TS-MOS-PD-006 Rev.A/0 Page 2 of 9

3 Typical characteristics (25 unless noted) Figure Output Characteristics Figure 2 Transfer Characteristics (A) Top : V 8V 7V 6V 5V Bottom : 4V (A) V DS =25V V DS (V) (V) Figure 3 Normalized Threshold Voltage vs.temperature.2 Vth Figure 4 Normalized BV DSS vs.temperature BV.3 DSS..2.0 V DS = =250uA. =0 V =250uA T j ( ) T j 75 ( ) Figure 5 Normalized on Resistance vs Temperature R2.75 DS(on) Figure 6 Source-Drain Diode Forward Characteristics V SD (V) =V =2A T j 75 ( ) I SD (A) 5 Datasheet TS-MOS-PD-006 Rev.A/0 Page 3 of 9

4 Figure 7 Capacitance C 00 (pf) Figure 8 Gate Charge (V) C iss V DS =480V =4A C oss C rss f=mhz =0V V DS (V) Q g (nc) 20 Figure 9- Safe Operating Area For BF94N60 I0 D (A) Operation in This Areais Limited by R DS (on). TC = TJ = Single Pulse DC ms us 0us ms 0 V DS 00 (V) Figure 9-2 Maximum Safe Operating Area For BF94N60L I0 D (A) Operation in This Areais Limited by R DS (on). TC = TJ = Single Pulse ms ms DC us 0us 0 V DS 00 (V) Figure Maximum Drain Current vs Case Temperature (A) T C ( ) Datasheet TS-MOS-PD-006 Rev.A/0 Page 4 of 9

5 Figure - Maximum Transient Thermal Impedance For BF94N60 Z θjc (t) Thermal Response 0. D= SINGLE PULSE (THERMAL )RESPONSE). Duty factor D = t / t2 2. Peak TJ = PDM x ZthJC + Tc t, Square Wave Pulse Duration [sec] Figure -2 Maximum Transient Thermal Impedance For BF94N60L Z θjc (t) Thermal Response 0. D= SINGLE PULSE (THERMAL )RESPONSE). Duty factor D = t / t2 2. Peak TJ = PDM x ZthJC + Tc t, Square Wave Pulse Duration [sec] Datasheet TS-MOS-PD-006 Rev.A/0 Page 5 of 9

6 Package Drawing TO-220 D A Φ E2 E E3 Φ2 b B L2 L E θ2 θ θ3 b C2 C e e C θ4 Symbol Dimensions In Millimeters Dimensions In Inches Min Nom Max Min Nom Max A B b b C C C D E E E E e L L Θ 3 3 Θ2 3 3 Θ3 3 3 Θ4 3 3 φ φ Datasheet TS-MOS-PD-006 Rev.A/0 Page 6 of 9

7 TO-220F θ 6 L3 D D 2-φ2 A C E3 θ θ2 B E2 E E 4-φ3 b3 E4 L φ θ4 θ3 θ5 b2 b L2 C2 e e C Datasheet TS-MOS-PD-006 Rev.A/0 Page 7 of 9

8 Symbol Dimensions In Millimeters Dimensions In Inches Min Nom Max Min Nom Max A B b b b C C C D D E E E E E e e L L L Θ 5 5 Θ2 3 3 Θ3 Θ4 5 5 Θ5 3 3 Θ6 5 5 φ φ2.50 深.2 头部 深.2 头部 60 φ3.50 深 深 0. Datasheet TS-MOS-PD-006 Rev.A/0 Page 8 of 9

9 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. (short for BME) exerts the greatest possible effort to ensure high quality and reliability. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing BME products, to comply with the standards of safety in making a safe design for the entire system, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. In developing your designs, please ensure that BME products are used within specified operating ranges as set forth in the most recent BME products specifications. The BME products listed in this document are intended for usage in general electronics applications (personal equipment, office equipment, domestic appliances, etc.). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of BME products listed in this document shall be made at the customer s own risk. BME is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Datasheet TS-MOS-PD-006 Rev.A/0 Page 9 of 9