MC10E155, MC100E155. 5VНECL 6 Bit 2:1 Mux Latch

MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator

5VНual TTL to ifferential PECL Translator The MC0ELT/00ELT22 is a dual TTL to differential PECL translator. Because PECL (Positive ECL) levels are used only +5 V and ground are required. The small outline

MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL

Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground

MC10E137, MC100E VНECL 8-Bit Ripple Counter

5 НEC 8-Bit ipple Counter escription The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits

LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW

The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20

MC10EP142, MC100EP V / 5 VНECL 9 Bit Shift Register

MCEP42, MCEP42 3.3 V / 5 VНECL 9 Bit Shift Register The MCEP/EP42 is a 9 bit shift register, designed with byte-parity applications in mind. The MC/EP42 is capable of performing serial/parallel data into

MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer

3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can

MC100EP16VS. 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing

3.3V / 5V ECL ifferential Receiver/river with Variable Output Swing escription The MC00EP6VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 00EP6

NBXDBA V, MHz / MHz LVPECL Clock Oscillator

. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device

MC10H352. Quad CMOS to PECL* Translator

Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is

NBXSBA /3.3 V, MHz LVPECL Clock Oscillator

2.5/. V, 5. MHz LVPECL Clock Oscillator The NBXSBA051, single frequency, crystal oscillator (XO) is designed to meet today s requirements for 2.5/. V LVPECL clock generation applications. The device uses

MC10EP08, MC100EP V / 5V ECL 2-Input Differential XOR/XNOR

MC0EP0, MC00EP0 3.3V / 5V ECL 2-Input ifferential XOR/XNOR escription The MC0/00EP0 is a differential XOR/XNOR gate. The EP0 is ideal for applications requiring the fastest AC performance available. The

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

The SN74LS64 is a high speed 8-Bit Serial-In Parallel-Out Shift Register. Serial data is entered through a 2-Input AN gate synchronous with the LOW to HIGH transition of the clock. The device features

MC10EL16, MC100EL V ECL Differential Receiver

MC0EL6, MC00EL6 5.0 V ECL ifferential Receiver The MC0EL/00EL6 is a differential receiver. The device is functionally equivalent to the E6 device with higher performance capabilities. With output transition

NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator

. V, 75 MHz / 150 MHz LVPECL Clock Oscillator The NBXBA009 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a

MC10E V, 5V Dual ECL Output Comparator with Latch

5V, 5V Dual ECL Output Comparator with Latch The MC10E1651 is fabricated using ON Semiconductor s advanced MOSAIC III process. The MC10E1651 incorporates a fixed level of input hysteresis as well as output

NBXDBA V, 62.5 MHz / 125 MHz LVPECL Clock Oscillator

. V, 62.5 MHz / 125 MHz LVPECL Clock Oscillator The NBXBA014 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses

NBXDBA019, NBXHBA019, NBXSBA V, 125 MHz / 250 MHz LVPECL Clock Oscillator

NBXBA019, NBXHBA019, NBXSBA019. V, 15 MHz / 50 MHz LVPECL Clock Oscillator The single and dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation

MC100EL29. 5VНECL Dual Differential Data and Clock D Flip Flop With Set and Reset

MCE29 5НEC ual ifferential ata and Clock Flip Flop With Set and Reset escription The MCE29 is a dual master slave flip flop. The device features fully differential ata and Clock inputs as well as outputs.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

MC100EL30. 5VНECL Triple D Flip Flop with Set and Reset

MCE30 5VНEC Triple Flip Flop with et and Reset The MCE30 is a triple master slave flip flop with differential outputs. ata enters the master latch when the clock input is OW and transfers to the slave

MC10E V, -5V Dual ECL Output Comparator with Latch

5V, -5V Dual ECL Output Comparator with Latch The MC10E1652 is fabricated using ON Semiconductor s advanced MOSAIC III process and is output compatible with 10H logic devices. In addition, the device is

NB4N855S 3.3 V, 1.5 Gb/s Dual AnyLevel to LVDS Receiver/Driver/Buffer/ Translator

3.3 V,.5 Gb/s ual AnyLevel to LVS Receiver/river/Buffer/ Translator escription NB4N55S is a clock or data Receiver/river/Buffer/Translator capable of translating AnyLevel input signal (LVPECL, CML, HSTL,

NBXHGA /3.3 V, MHz LVPECL Clock Oscillator

2.5/. V, 125.00 MHz LVPECL Clock Oscillator The NBXHGA019, single frequency, crystal oscillator (XO) is designed to meet today s requirements for 2.5/. V LVPECL clock generation applications. The device

NBXSBA024, NBXSBB024, NBXMBB V / 3.3 V, MHz LVPECL Clock Oscillator

NBXSBA0, NBXSBB0, NBXMBB0.5 V /. V, 6.08 MHz LVPECL Clock Oscillator The single frequency, crystal oscillator (XO) is designed to meet today s requirements for.5 V /. V LVPECL clock generation applications.

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23

NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management

MC10H603, MC100H Bit Latch ECL to TTL Translator

9 Bit atch EC to TT Tralator escription The MC10/100603 is a 9 bit, dual supply EC to TT tralator. evices in the ON Semiconductor 9 bit tralator series utilize the 28 lead PCC for optimal power pinning,

NBVSPA V, MHz LVDS Voltage-Controlled Clock Oscillator (VCXO) PureEdge Product Series

2.5 V, 212.00 MHz LVS Voltage-Controlled Clock Oscillator (VCXO) PureEdge Product Series The NBVSPA01 voltage controlled crystal oscillator (VCXO) is designed to meet today s requirements for 2.5 V LVS

MC10E137, MC100E VНECL 8-Bit Ripple Counter

5 VНEC 8-Bit Ripple Counter escription The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits

NBXDPA V / 3.3 V, MHz / MHz LVDS Clock Oscillator

2.5 V / 3.3 V, 156.25 MHz / 312.5 MHz LVS Clock Oscillator The NBXPA017 dual frequency crystal oscillator (XO) is designed to meet today s requirements for 2.5 V and 3.3 V LVS clock generation applications.

MC100EPT22/D. MARKING DIAGRAMS* ORDERING INFORMATION SO 8 D SUFFIX CASE 751 KPT22 ALYW TSSOP 8 DT SUFFIX CASE 948R KA22 ALYW

The MC00EPT22 is a dual LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3 V and ground are required. The small outline lead package and the single

MBRM110ET3G NRVBM110ET1G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package

MBM11ET1G, NVBM11ET1G Surface Mount Schottky Power ectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces

NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel

NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These

NBXDPA V / 3.3 V, 125 MHz / 250 MHz LVDS Clock Oscillator

2.5 V / 3.3 V, 125 MHz / 250 MHz LVS Clock Oscillator The NBXPA019 dual frequency crystal oscillator (XO) is designed to meet today s requirements for 2.5 V and 3.3 V LVS clock generation applications.

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL

NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced

NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88

NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

MJD44H11 (NPN) MJD45H11 (PNP)

MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

MC10EP142, MC100EP V / 5 VНECL 9 Bit Shift Register

MC0EP42, MCEP42 3.3 V / 5 VНECL Bit Shift Register The MC0EP/EP42 is a bit shift register, designed with byte-parity applications in mind. The MC0/EP42 is capable of performing serial/parallel data into

NVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel

Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable

P2I2305NZ. 3.3V 1:5 Clock Buffer

3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

NVTFS5826NL. Power MOSFET 60 V, 24 m, 20 A, Single N Channel

Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

MARKING DIAGRAMS* ORDERING INFORMATION KPT23 ALYW SO 8 D SUFFIX CASE 751 TSSOP 8 DT SUFFIX CASE 948R KA23 ALYW

The MC00EPT23 is a dual differential LVPECL to LVTTL translator. Because LVPECL (Positive ECL) levels are used, only +3.3 V and ground are required. The small outline -lead package and the dual gate design

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

NVTFS5116PL. Power MOSFET. 60 V, 14 A, 52 m, Single P Channel

Power MOSFET 6 V, 4 A, 52 m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS56PLWF Wettable

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY

Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching

NCP304A. Voltage Detector Series

Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

MC100EP V 2:1:9 Differential HSTL/PECL/LVDS to HSTL Clock Driver with LVTTL Clock Select and Enable

3.3 2:: Differential HSTL/PECL/LDS to HSTL Clock Driver with LTTL Clock Select and Enable Description The MC00EP80 is a low skew 2:: differential clock driver, designed with clock distribution in mind,

NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel

Power MOSFET 4 V,. m, 7 A, Single N Channel Features Small Footprint (5x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These evices are

NTMFS4H01N Power MOSFET

NTMFS4HN Power MOSFET V, 334 A, Single N Channel, SO 8FL Features Optimized esign to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns

BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages

NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V

NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in

NB7V52M. 1.8V / 2.5V Differential D Flip-Flop w/ Reset and CML Outputs. Multi Level Inputs w/ Internal Termination

1.8V / 2.5V ifferential Flip-Flop w/ Reset and CML Outputs Multi Level Inputs w/ Internal Termination escription The is a 10 GHz differential flip flop with a differential asynchronous Reset. The differential

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

NB7L32M. 2.5V/3.3V, 14GHz 2 Clock Divider w/cml Output and Internal Termination

2.5V/3.3V, 14GHz 2 Clock ivider w/cml Output and Internal Termination escription The NB7L32M is an integrated 2 divider with differential clock inputs and asynchronous reset. ifferential clock inputs incorporate

NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output

3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output Description The NB3N508S is a high precision, low phase noise Voltage Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that

MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes

MBD301G, MMBD301LT1G. Silicon Hot-Carrier Diodes. SCHOTTKY Barrier Diodes 30 VOLTS SILICON HOT CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier iodes SCHOTTKY Barrier iodes These devices are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection

MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications

MC10EP51, MC100EP V / 5VНECL D Flip Flop with Reset and Differential Clock

3.3V / 5VНEC Flip Flop with Reset and ifferential Clock escription The MC0/00EP5 is a differential clock flip flop with reset. The device is functionally equivalent to the E5 and VE5 devices. The reset

MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

MC10H680, MC100H Bit Differential ECL Bus to TTL Bus Transceiver

4 Bit Differential ECL Bus to TTL Bus Transceiver Description The MC10H/100H680 is a dual supply 4 bit differential ECL bus to TTL bus transceiver. It is designed to allow the system designer to no longer

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE

NB2879A. Low Power, Reduced EMI Clock Synthesizer

Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.

NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

NB6L V / 3.3V Differential 2 X 2 Crosspoint Switch with LVPECL Outputs. Multi-Level Inputs w/ Internal Termination

.5V / 3.3V ifferential X Crosspoint Switch with LVPECL Outputs Multi-Level Inputs w/ Internal Termination escription The NB6L7 is a clock or data high-bandwidth fully differential x Crosspoint Switch with

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors

MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed

MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS

MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use

MC100EPT V LVTTL/LVCMOS to LVPECL Translator

MCEPT622 3.3V VTT/VCMOS to VPEC Translator Description The MCEPT622 is a 0 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC

Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

MUN5311DW1T1G Series.

MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

MC3488A. Dual EIA 423/EIA 232D Line Driver

Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard

MC10H600, MC100H Bit TTL to ECL Translator

MC10600, MC100600 9 Bit TT to EC Translator Description The MC10/100600 is a 9 bit, dual supply TT to EC translator. Devices in the ON Semiconductor 9 bit translator series utilize the PCC 28 for optimal

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram

3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS

MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*

MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection

4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage

MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS

MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where