MC10H600, MC100H Bit TTL to ECL Translator
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1 MC10600, MC Bit TT to EC Translator Description The MC10/ is a 9 bit, dual supply TT to EC translator. Devices in the ON Semiconductor 9 bit translator series utilize the PCC 28 for optimal power pinning, signal flow through and electrical performance. The 600 features both EC and TT logic enable controls for maximum flexibility. The 10 version is compatible with MEC 10 EC logic levels. The 100 version is compatible with 100K levels. Features 9 Bit Ideal for Byte Parity Applications Flow Through Configuration Extra TT and EC Power/Ground Pins to Minimize Switching Noise EC and TT Enable Inputs Dual Supply 3.5 ns Max D to Q PNP TT Inputs for ow oading Choice of EC Compatibility: MEC 10 (10xxx) or 100K (100xxx) Pb Free Packages are Available* PCC 28 FN SUFFI CASE 776 MARKING DIAGRAM* 1 MCxxx600G AWYYWW xxx = 10 or 100 A = Assembly ocation W = Wafer ot YY = Year WW = Work Week G = Pb Free Package *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C, 2006 November, 2006 Rev. 9 1 Publication Order Number: MC10600/D
2 MC10600, MC D5 D4 V CCT D3 D2 D1 D0 D6 D7 D8 GND ENTT NC ENEC Q8 Q7 V CCO Q6 V EE Q5 Q4 Q0 Q1 V CCE V CCO Q2 V CCO Q3 Table 1. PIN NAMES PIN GND V CCE V CCO V CCT V EE D0 D8 Q0 Q8 ENEC ENTT FUNCTION TT Ground (0 V) EC V CC (0 V) EC V CC (0 V) Outputs TT Supply (+5.0 V) EC Supply ( 5.2/ 4.5 V) Data Inputs (TT) Data Outputs (EC) Enable Control (EC) Enable Control (TT) Figure 1. Pinout: PCC 28 (Top View) ENEC ENTT Table 2. TRUT TABE D0 D1 D2 Q0 Q1 Q2 ENEC ENTT D Q D3 Q3 TT D4 Q4 EC D5 Q5 D6 Q6 D7 Q7 D8 Q8 Figure 2. ogic Symbol Table 3. DC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% (10 version); V EE = 4.2 V to 5.5 V (100) Symbol Parameter Power Supply Current I EE EC ma I CC TT 48 I CC ma 2
3 MC10600, MC Table EC DC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% I IN I I V I V I V O V O Input IG Current Input OW Current Input IG Voltage Input OW Voltage Output IG Voltage Output OW Voltage to 2.0 V A A Table EC DC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 4.2 V to 5.5 V I IN I I V I V I V O V O Input IG Current Input OW Current Input IG Voltage Input OW Voltage Output IG Voltage Output OW Voltage to 2.0 V A A Table 6. TT DC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% (10); V EE = 4.2 V to 5.5 V (100) V I V I Input IG Voltage Input OW Voltage V V I I Input IG Current V IN = 2.7 V V IN = 7.0 V A I I Input OW Current V IN = V ma V IK Input Clamp Voltage I IN = 18 ma V 3
4 MC10600, MC Table 7. AC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% (10); V EE = 4.2 V to 5.5 V (100) t P Propagation Delay to Output D 50 to 2.0 V ns t P ENEC / ns ENTT t R t F Output Rise/Fall Time 20% 80% ns ORDERING INFORMATION Device Package Shipping MC10600FN PCC s / Rail MC10600FNG PCC s / Rail MC10600FNR2 PCC / Tape & Reel MC10600FNR2G PCC / Tape & Reel MC100600FN PCC s / Rail MC100600FNG PCC s / Rail MC100600FNR2 PCC / Tape & Reel MC100600FNR2G PCC / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D EC Clock Distribution Techniques AN1406/D Designing with PEC (EC at +5.0 V) AN1503/D ECinPS I/O SPiCE Modeling Kit AN1504/D Metastability and the ECinPS Family AN1568/D Interfacing Between VDS and EC AN1672/D The EC Translator Guide AND8001/D Odd Number Counters Design AND8002/D Marking and Date Codes AND8020/D Termination of EC ogic Devices AND8066/D Interfacing with ECinPS AND8090/D AC Characteristics of EC Devices 4
5 MC10600, MC PACKAGE DIMENSIONS PCC 28 FN SUFFI PASTIC PCC PACKAGE CASE ISSUE E N Y BRK B (0.180) M T M S N S U (0.180) M T M S N S D M Z 28 1 V W D VIEW D D G (0.250) S T M S N S Z A R (0.180) M T M S N S (0.180) M T M S N S (0.180) M T M S N S C E K1 G G1 J VIEW S (0.100) T SEATING PANE K F (0.180) M T M S N S (0.250) S T M S N S VIEW S NOTES: 1. DATUMS, M, AND N DETERMINED WERE TOP OF EAD SOUDER EITS PASTIC BODY AT MOD PARTING INE. 2. DIMENSION G1, TRUE POSITION TO BE MEASURED AT DATUM T, SEATING PANE. 3. DIMENSIONS R AND U DO NOT INCUDE MOD FAS. AOWABE MOD FAS IS (0.250) PER SIDE. 4. DIMENSIONING AND TOERANCING PER ANSI Y14.5M, CONTROING DIMENSION: INC. 6. TE PACKAGE TOP MAY BE SMAER TAN TE PACKAGE BOTTOM BY UP TO (0.300). DIMENSIONS R AND U ARE DETERMINED AT TE OUTERMOST ETREMES OF TE PASTIC BODY ECUSIVE OF MOD FAS, TIE BAR BURRS, GATE BURRS AND INTEREAD FAS, BUT INCUDING ANY MISMATC BETWEEN TE TOP AND BOTTOM OF TE PASTIC BODY. 7. DIMENSION DOES NOT INCUDE DAMBAR PROTRUSION OR INTRUSION. TE DAMBAR PROTRUSION(S) SA NOT CAUSE TE DIMENSION TO BE GREATER TAN (0.940). TE DAMBAR INTRUSION(S) SA NOT CAUSE TE DIMENSION TO BE SMAER TAN (0.635). INCES MIIMETERS DIM MIN MA MIN MA A B C E F G BSC 1.27 BSC J K R U V W Y Z G K
6 MC10600, MC ECinPS is a trademark of Semiconductor Components Industries, C (SCIC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INFORMATION ITERATURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative MC10600/D
7 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & ifecycle Information: ON Semiconductor: MC10600FNR2G MC10600FNG
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MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10216L AWLYYWW
The MC1016 is a high speed triple differential amplifier designed for use in sensing differential signals over long lines. The base bias supply (V BB ) is made available at pin 11 to make the device useful
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount