MC100EL30. 5VНECL Triple D Flip Flop with Set and Reset
|
|
|
- Hugh Lane
- 5 years ago
- Views:
Transcription
1 MCE30 5VНEC Triple Flip Flop with et and Reset The MCE30 is a triple master slave flip flop with differential outputs. ata enters the master latch when the clock input is OW and transfers to the slave upon a positive transition on the clock input. In addition to a common et input individual Reset inputs are provided for each flip flop. Both the et and Reset inputs function asynchronous and overriding with respect to the clock inputs. Features 1200 Mz Minimum Toggle Frequency 450 ps Typical Propagation elays E Protection: >2 kv uman Body Model The eries Contains Temperature Compensation. PEC Mode Operating Range: V CC = 4.2 V to 5.7 V with V EE = 0 V NEC Mode Operating Range: V CC = 0 V with V EE = 4.2 V to 5.7 V Internal Input 75 k Pulldown Resistors Meets or Exceeds JEEC pec EIA/JE78 IC atchup Test Moisture ensitivity evel 1 For Additional Information, see Application Note AN8003/ Flammability Rating: U 94 V in, Oxygen Index: 28 to 34 Transistor Count = 347 devices Pb Free Packages are Available* 20 1 O 20 WB W UFFI CAE 751 MARKING IAGRAM* E30 AWYYWWG A W YY WW G = Assembly ocation = Wafer ot = Year = Work Week = Pb Free Package *For additional marking information, refer to Application Note AN8002/. ORERING INFORMATION ee detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON emiconductor oldering and Mounting Techniques Reference Manual, OERRM/. emiconductor Components Industries, C, 2006 October, 2006 Rev. 5 1 Publication Order Number: MCE30/
2 MCE30 V CC V CC 1 1 V CC 2 2 V EE Table 1. PIN ECRIPTION Pin Function R R R 0 2 R0 R2 CK0 CK ; 0 2 V CC V EE EC ata Inputs EC Reset Inputs EC Clock Inputs EC Common et Input EC ifferential ata Outputs Positive upply Negative upply CK0 R0 1 CK1 R1 2 CK2 R2 Warning: All V CC and V EE pins must be externally connected to Power upply to guarantee proper operation. Figure 1. ogic iagram and Pinout: 20-ead OIC (Top View) Table 2. FUNCTION TABE R* * * CK* Z Z Undef Undef Z = ow-to-igh Transition = on t Care *Pin will default low when left open. Table 3. MAIMUM RATING ymbol Parameter Condition 1 Condition 2 Rating Unit V CC PEC Mode Power upply V EE = 0 V 8 to 0 V V EE NEC Mode Power upply V CC = 0 V 8 to 0 V V I PEC Mode Input Voltage NEC Mode Input Voltage V EE = 0 V V CC = 0 V V I V CC 6 to 0 V I V EE 6 to 0 V V I out Output Current Continuous urge 50 ma ma T A Operating Temperature Range 40 to +85 C T stg torage Temperature Range 65 to +150 C JA Thermal Resistance (Junction to Ambient) 0 lfpm 500 lfpm OIC 20 OIC C/W C/W JC Thermal Resistance (Junction to Case) tandard Board OIC to 35 C/W T sol Wave older Pb Pb Free <2 to C <2 to C C tresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2
3 MCE30 Table 4. PEC C CARACTERITIC V CC = 5.0 V; V EE = 0.0 V (Note 1) 40 C 25 C 85 C ymbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit I EE Power upply Current ma V O Output IG Voltage (Note 2) mv V O Output OW Voltage (Note 2) mv V I Input IG Voltage mv V I Input OW Voltage mv I I Input IG Current A I I Input OW Current A NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with V CC. V EE can vary +0.8 V / 0.5 V. 2. Outputs are terminated through a 50 resistor to V CC 2.0 V. Table 5. NEC C CARACTERITIC V CC = 0.0 V; V EE = 5.0 V (Note 3) 40 C 25 C 85 C ymbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit I EE Power upply Current ma V O Output IG Voltage (Note 4) mv V O Output OW Voltage (Note 4) mv V I Input IG Voltage mv V I Input OW Voltage mv I I Input IG Current A I I Input OW Current A NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Input and output parameters vary 1:1 with V CC. V EE can vary +0.8 V / 0.5 V. 4. Outputs are terminated through a 50 resistor to V CC 2.0 V. 3
4 MCE30 Table 6. AC CARACTERITIC V CC = 5.0 V; V EE = 0.0 V or V CC = 0.0 V; V EE = 5.0 V (Note 5) 40 C 25 C 85 C ymbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit f max Maximum Toggle Frequency Gz t P Propagation elay to Output CK,, R ps t P t t etup Time old Time ps t RR et/reset Recovery ps t PW Minimum Pulse Width CK et, Reset ps t JITTER Cycle to Cycle Jitter TB TB TB ps t r t f Output Rise/Fall Times (20% 80%) ps NOTE: evice will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. evice specification limit values are applied individually under normal operating conditions and not valid simultaneously. 5. V EE can vary +0.8 V / 0.5 V. river evice Z o = 50 Z o = 50 Receiver evice V TT V TT = V CC 2.0 V Figure 2. Typical Termination for Output river and evice Evaluation (ee Application Note AN8020/ Termination of EC ogic evices.) 4
5 MCE30 ORERING INFORMATION evice Package Package MCE30W OIC Units / Rail MCE30WG OIC 20 (Pb Free) 38 Units / Rail MCE30WR2 OIC 20 0 / Tape & Reel MCE30WR2G OIC 20 (Pb Free) 0 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging pecifications Brochure, BR8011/. Resource Reference of Application Notes AN1405/ EC Clock istribution Techniques AN1406/ esigning with PEC (EC at +5.0 V) AN1503/ ECinP I/O PiCE Modeling Kit AN1504/ Metastability and the ECinP Family AN1568/ Interfacing Between V and EC AN1672/ The EC Translator Guide AN8001/ Odd Number Counters esign AN8002/ Marking and ate Codes AN8020/ Termination of EC ogic evices AN8066/ Interfacing with ECinP AN8090/ AC Characteristics of EC evices 5
6 MCE30 PACKAGE IMENION O 20 WB W UFFI CAE IUE G A M B M E h 45 NOTE: 1. IMENION ARE IN MIIMETER. 2. INTERPRET IMENION AN TOERANCE PER AME Y14.5M, IMENION AN E O NOT INCUE MO PROTRUION. 4. MAIMUM MO PROTRUION 0.15 PER IE. 5. IMENION B OE NOT INCUE AMBAR PROTRUION. AOWABE PROTRUION A BE 0.13 TOTA IN ECE OF B IMENION AT MAIMUM MATERIA CONITION. 20 B 0.25 M T A 18 e B B A A1 T EATING PANE C MIIMETER IM MIN MA A A B C E e 1.27 BC h ECinP are registered trademarks of emiconductor Components Industries, C (CIC). ON emiconductor and are registered trademarks of emiconductor Components Industries, C (CIC). CIC reserves the right to make changes without further notice to any products herein. CIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in CIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. CIC does not convey any license under its patent rights nor the rights of others. CIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the CIC product could create a situation where personal injury or death may occur. hould Buyer purchase or use CIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold CIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that CIC was negligent regarding the design or manufacture of the part. CIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORERING INFORMATION ITERATURE FUFIMENT: iterature istribution Center for ON emiconductor P.O. Box 5163, enver, Colorado UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order iterature: For additional information, please contact your local ales Representative MCE30/
MC100EL29. 5VНECL Dual Differential Data and Clock D Flip Flop With Set and Reset
MCE29 5НEC ual ifferential ata and Clock Flip Flop With Set and Reset escription The MCE29 is a dual master slave flip flop. The device features fully differential ata and Clock inputs as well as outputs.
MC100EL14. 5V ECL 1:5 Clock Distribution Chip
MC100E14 5V EC 1:5 Clock Distribution Chip The MC100E14 is a low skew 1:5 clock distribution chip designed explicitly for low skew clock distribution applications. The V BB pin, an internally generated
MC100EPT V LVTTL/LVCMOS to LVPECL Translator
MCEPT622 3.3V VTT/VCMOS to VPEC Translator Description The MCEPT622 is a 0 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has
MC10EP51, MC100EP V / 5VНECL D Flip Flop with Reset and Differential Clock
3.3V / 5VНEC Flip Flop with Reset and ifferential Clock escription The MC0/00EP5 is a differential clock flip flop with reset. The device is functionally equivalent to the E5 and VE5 devices. The reset
MC10E137, MC100E VНECL 8-Bit Ripple Counter
5 VНEC 8-Bit Ripple Counter escription The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits
MC100EPT V LVTTL/LVCMOS to LVPECL Translator Description The MC100EPT622 is a 10- Bit LVTTL/LVCMOS to LVPECL translator. Because LVPECL (Positiv
3.3V VTT/VCMOS to VPEC Translator Description The is a 0- Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has an OR- ed enable
MC100EPT VНLVTTL/LVCMOS to LVPECL Translator
3.3VНVTT/VCMOS to VPEC Translator The is a 10 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has an OR ed enable input which
MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL
Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground
MC10H603, MC100H Bit Latch ECL to TTL Translator
9 Bit atch EC to TT Tralator escription The MC10/100603 is a 9 bit, dual supply EC to TT tralator. evices in the ON Semiconductor 9 bit tralator series utilize the 28 lead PCC for optimal power pinning,
MARKING DIAGRAMS* ORDERING INFORMATION 8 1 SO 8 D SUFFIX CASE 751 KEP51 ALYW HEP51 ALYW 8 1 TSSOP 8 DT SUFFIX CASE 948R KP51 ALYW
The MC0/EP5 is a differential clock flip flop with reset. The device is functionally equivalent to the E5 and VE5 devices. The reset input is an asynchronous, level triggered signal. ata enters the master
MC100EP016A. 3.3 VНECL 8 Bit Synchronous Binary Up Counter
3.3 VНEC 8 Bit Synchronous Binary Up Counter Description The MC100EP016A is a high speed synchronous, presettable, cascadeable 8 bit binary counter. Architecture and operation are the same as the ECinPS
MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator
5VНual TTL to ifferential PECL Translator The MC0ELT/00ELT22 is a dual TTL to differential PECL translator. Because PECL (Positive ECL) levels are used only +5 V and ground are required. The small outline
MC10H600, MC100H Bit TTL to ECL Translator
MC10600, MC100600 9 Bit TT to EC Translator Description The MC10/100600 is a 9 bit, dual supply TT to EC translator. Devices in the ON Semiconductor 9 bit translator series utilize the PCC 28 for optimal
MC100LVEL V ECL D Flip Flop with Set and Reset
M00VE3 3.3V E Flip Flop with et and Reset escription The M00VE3 is a flip-flop with set and reset. The device is functionally equivalent to the E3 device but operates from a 3.3 V supply. With propagation
NBXDBA V, MHz / MHz LVPECL Clock Oscillator
. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device
MC10EL31, MC100EL31. 5 V ECL D Flip Flop With Set and Reset
M0E3, M00E3 5 V E Flip Flop With et and Reset The M0E/00E3 is a flip-flop with set and reset. The device is functionally equivalent to the E3 device with higher performance capabilities. With propagation
NVTFS5820NL. Power MOSFET 60 V, 11.5 m, Single N Channel, 8FL
Power MOFET 6 V,.5 m, ingle N Channel, 8FL Features mall Footprint (3.3x3.3 mm) for Compact esign Low R (on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTF582NLWF Wettable
LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW
The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20
MC10E136, MC100E136. 5VНECL 6-Bit Universal Up/Down Counter
5VНEC 6-Bit Universal Up/own Counter escription The MC10E/100E136 is a 6-bit synchronous, presettable, cascadable universal counter. The device generates a look-ahead-carry output and accepts a look-ahead-carry
NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator
. V, 75 MHz / 150 MHz LVPECL Clock Oscillator The NBXBA009 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a
NL27WZ07. Dual Buffer with Open Drain Outputs
Dual Buffer with Open Drain Outputs The N27WZ07 is a high performance dual buffer with open drain outputs operating from a.5 to 5.5 V supply. The internal circuit is composed of multiple stages, including
MC10E137, MC100E VНECL 8-Bit Ripple Counter
5 НEC 8-Bit ipple Counter escription The MC10E/100E137 is a very high speed binary ripple counter. The two least significant bits were designed with very fast edge rates while the more significant bits
NBXDBA019, NBXHBA019, NBXSBA V, 125 MHz / 250 MHz LVPECL Clock Oscillator
NBXBA019, NBXHBA019, NBXSBA019. V, 15 MHz / 50 MHz LVPECL Clock Oscillator The single and dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation
NBXDBA V, 62.5 MHz / 125 MHz LVPECL Clock Oscillator
. V, 62.5 MHz / 125 MHz LVPECL Clock Oscillator The NBXBA014 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses
MC10H645. 1:9 TTL Clock Driver
MC10645 1:9 TT Clock Driver Description The MC10645 is a single supply, low skew, TT I/O 1:9 Clock Driver. Devices in the 600 clock driver family utilizes the PCC 28 for optimal power and signal pin placement.
NBVSPA V, MHz LVDS Voltage-Controlled Clock Oscillator (VCXO) PureEdge Product Series
2.5 V, 212.00 MHz LVS Voltage-Controlled Clock Oscillator (VCXO) PureEdge Product Series The NBVSPA01 voltage controlled crystal oscillator (VCXO) is designed to meet today s requirements for 2.5 V LVS
NBXSBA /3.3 V, MHz LVPECL Clock Oscillator
2.5/. V, 5. MHz LVPECL Clock Oscillator The NBXSBA051, single frequency, crystal oscillator (XO) is designed to meet today s requirements for 2.5/. V LVPECL clock generation applications. The device uses
NBXSBA024, NBXSBB024, NBXMBB V / 3.3 V, MHz LVPECL Clock Oscillator
NBXSBA0, NBXSBB0, NBXMBB0.5 V /. V, 6.08 MHz LVPECL Clock Oscillator The single frequency, crystal oscillator (XO) is designed to meet today s requirements for.5 V /. V LVPECL clock generation applications.
NBXHGA /3.3 V, MHz LVPECL Clock Oscillator
2.5/. V, 125.00 MHz LVPECL Clock Oscillator The NBXHGA019, single frequency, crystal oscillator (XO) is designed to meet today s requirements for 2.5/. V LVPECL clock generation applications. The device
NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23
NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management
MC100EP16VS. 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing
3.3V / 5V ECL ifferential Receiver/river with Variable Output Swing escription The MC00EP6VS is a differential receiver with variable output amplitude. The device is functionally equivalent to the 00EP6
NBXDPA V / 3.3 V, MHz / MHz LVDS Clock Oscillator
2.5 V / 3.3 V, 156.25 MHz / 312.5 MHz LVS Clock Oscillator The NBXPA017 dual frequency crystal oscillator (XO) is designed to meet today s requirements for 2.5 V and 3.3 V LVS clock generation applications.
74HCT157. Quad 2 Input Data Selectors / Multiplexers. High Performance Silicon Gate CMOS
74HCT57 Quad 2 Input Data Selectors / Multiplexers High Performance Silicon Gate CMOS The 74HCT57 is identical in pinout to the S57. The device inputs are compatible with standard CMOS outputs; with pullup
MC100LVEP V / 3.3V ECL 2-Input Differential AND/NAND
M00VEP05 2.5V / 3.3V E 2-Input ifferential AN/NAN escription The M00VEP05 is a 2 input differential AN/NAN gate. The M00VEP05 is the low voltage version of the M00EP05 and is functionally equivalent to
NBXDPA V / 3.3 V, 125 MHz / 250 MHz LVDS Clock Oscillator
2.5 V / 3.3 V, 125 MHz / 250 MHz LVS Clock Oscillator The NBXPA019 dual frequency crystal oscillator (XO) is designed to meet today s requirements for 2.5 V and 3.3 V LVS clock generation applications.
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel
NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These
MC10EP142, MC100EP V / 5 VНECL 9 Bit Shift Register
MCEP42, MCEP42 3.3 V / 5 VНECL 9 Bit Shift Register The MCEP/EP42 is a 9 bit shift register, designed with byte-parity applications in mind. The MC/EP42 is capable of performing serial/parallel data into
NB4N855S 3.3 V, 1.5 Gb/s Dual AnyLevel to LVDS Receiver/Driver/Buffer/ Translator
3.3 V,.5 Gb/s ual AnyLevel to LVS Receiver/river/Buffer/ Translator escription NB4N55S is a clock or data Receiver/river/Buffer/Translator capable of translating AnyLevel input signal (LVPECL, CML, HSTL,
NB7V52M. 1.8V / 2.5V Differential D Flip-Flop w/ Reset and CML Outputs. Multi Level Inputs w/ Internal Termination
1.8V / 2.5V ifferential Flip-Flop w/ Reset and CML Outputs Multi Level Inputs w/ Internal Termination escription The is a 10 GHz differential flip flop with a differential asynchronous Reset. The differential
NVTFS5124PL. Power MOSFET 60 V, 6 A, 260 m, Single P Channel
Power MOSFET V, A, m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses NVTFS5PLWF Wettable
NVTFS5826NL. Power MOSFET 60 V, 24 m, 20 A, Single N Channel
Power MOSFET 6 V, 24 m, 2 A, Single N Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS5826NLWF
MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer
3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MC10EL16, MC100EL V ECL Differential Receiver
MC0EL6, MC00EL6 5.0 V ECL ifferential Receiver The MC0EL/00EL6 is a differential receiver. The device is functionally equivalent to the E6 device with higher performance capabilities. With output transition
NVTFS5116PL. Power MOSFET. 60 V, 14 A, 52 m, Single P Channel
Power MOSFET 6 V, 4 A, 52 m, Single P Channel Features Small Footprint (3.3 x 3.3 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Capacitance to Minimize river Losses NVTFS56PLWF Wettable
NTMFS4936NCT3G. NTMFS4936NC Power MOSFET 30 V, 79 A, Single N Channel, SO 8 FL
NTMFS4936N, NTMFS4936NC Power MOSFET 3 V, 79 A, Single N Channel, Features Low R S(on), Low Capacitance and Optimized Gate Charge to Minimize Conduction, river and Switching Losses Next Generation Enhanced
NTMFS4H01N Power MOSFET
NTMFS4HN Power MOSFET V, 334 A, Single N Channel, SO 8FL Features Optimized esign to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MARKING DIAGRAMS* ORDERING INFORMATION KPT23 ALYW SO 8 D SUFFIX CASE 751 TSSOP 8 DT SUFFIX CASE 948R KA23 ALYW
The MC00EPT23 is a dual differential LVPECL to LVTTL translator. Because LVPECL (Positive ECL) levels are used, only +3.3 V and ground are required. The small outline -lead package and the dual gate design
NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel
Power MOSFET 4 V,. m, 7 A, Single N Channel Features Small Footprint (5x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These evices are
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
MC10E155, MC100E155. 5VНECL 6 Bit 2:1 Mux Latch
5VНECL 6 Bit 2:1 Mux Latch escription The MC10E/100E155 contains six 2:1 multiplexers followed by transparent latches with single ended outputs. When both Latch Enables (L1, L2) are LOW, the latch is transparent,
NB3N508S. 3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output
3.3V, 216 MHz PureEdge VCXO Clock Generator with M LVDS Output Description The NB3N508S is a high precision, low phase noise Voltage Controlled Crystal Oscillator (VCXO) and phase lock loop (PLL) that
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MBD301G, MMBD301LT1G. Silicon Hot-Carrier Diodes. SCHOTTKY Barrier Diodes 30 VOLTS SILICON HOT CARRIER DETECTOR AND SWITCHING DIODES
Silicon Hot-Carrier iodes SCHOTTKY Barrier iodes These devices are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NTJS3151P. Trench Power MOSFET. 12 V, 3.3 A, Single P Channel, ESD Protected SC 88
NTJS5P Trench Power MOSFET V,. A, Single P Channel, ES Protected SC 88 Features Leading Trench Technology for Low R S(ON) Extending Battery Life SC 88 Small Outline (x mm, SC7 Equivalent) Gate iodes for
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
MC100EPT22/D. MARKING DIAGRAMS* ORDERING INFORMATION SO 8 D SUFFIX CASE 751 KPT22 ALYW TSSOP 8 DT SUFFIX CASE 948R KA22 ALYW
The MC00EPT22 is a dual LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3 V and ground are required. The small outline lead package and the single
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
NB6L V / 3.3V Differential 2 X 2 Crosspoint Switch with LVPECL Outputs. Multi-Level Inputs w/ Internal Termination
.5V / 3.3V ifferential X Crosspoint Switch with LVPECL Outputs Multi-Level Inputs w/ Internal Termination escription The NB6L7 is a clock or data high-bandwidth fully differential x Crosspoint Switch with
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
MC10H352. Quad CMOS to PECL* Translator
Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NTHS2101P. Power MOSFET. 8.0 V, 7.5 A P Channel ChipFET
NTHSP Power MOSFET. V,. A P Channel ChipFET Features Offers an Ultra Low R S(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal evice for Applications
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
NB7L32M. 2.5V/3.3V, 14GHz 2 Clock Divider w/cml Output and Internal Termination
2.5V/3.3V, 14GHz 2 Clock ivider w/cml Output and Internal Termination escription The NB7L32M is an integrated 2 divider with differential clock inputs and asynchronous reset. ifferential clock inputs incorporate
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single