MC10H603, MC100H Bit Latch ECL to TTL Translator
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1 9 Bit atch EC to TT Tralator escription The MC10/ is a 9 bit, dual supply EC to TT tralator. evices in the ON Semiconductor 9 bit tralator series utilize the 28 lead PCC for optimal power pinning, signal flow through and electrical performance. The devices feature a 48 ma TT output stage, and AC performance is specified into both a 50 pf and 200 pf load capacitance. atching is controlled by atch Enable (), and Master Reset () resets the latches. A IG on OEEC sends the outputs into the high impedance state. All control inputs are EC level. The 10 version is compatible with MEC 10 EC logic levels. The 100 version is compatible with 100K levels. Features 9 Bit Ideal for Byte Parity Applicatio 3 State TT Outputs Flow Through Configuration Extra TT and EC Power Pi to Minimize Switching Noise ual Supply Max elay into 50 pf, into 200 pf (all Outputs Switching) PNP TT Inputs for ow oading Pb Free Packages are Available* PCC 28 FN SUFFI CASE 776 MARKING IAGRAM* xxx = 10 or 100 A = Assembly ocation W = Wafer ot YY = Year WW = Work Week G = Pb Free Package 1 MCxxx603G AWYYWW *For additional marking information, refer to Application Note AN8002/. ORERING INFORMATION See detailed ordering and shipping information in the package dimeio section on page 4 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOERRM/. Semiconductor Components Industries, C, 2006 November, 2006 Rev Publication Order Number: MC10603/
2 Q5 GN V CCT Q6 GN Q7 Q8 Table 1. PIN NAMES Q4 Q3 V CCT Q2 GN Q1 Q V CCE PIN GN V CCE V CCT V EE 0 8 Q0 Q8 OEEC FUNCTION TT Ground (0 V) EC V CC (0 V) TT Supply (+5.0 V) EC Supply ( 5.2/ 4.5 V) ata Inputs (EC) ata Outputs (TT) 3-State Control (EC) atch Enable (EC) Master Reset (EC) OEEC V EE Figure 1. PCC 28 Pinout (Top View) OEEC Table 2. TRUT TABE Q0 Q1 Q2 OEEC Q Q 0 Z 3 Q3 EC 4 Q4 TT 5 Q5 6 Q6 7 Q7 8 Q8 Figure 2. ogic iagram 2
3 10 EC C CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% Symbol Parameter I EE Power Supply Current ma I IN I IN V I V I Input IG Current Input OW Current Input IG Voltage Input OW Voltage A A NOTE: evice will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. evice specification limit values are applied individually under normal operating conditio and not valid simultaneously. mv 100 EC C CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 4.2 V to 5.5 V Symbol Parameter I EE Power Supply Current ma I IN I IN V I V I Input IG Current Input OW Current Input IG Voltage Input OW Voltage A A NOTE: evice will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. evice specification limit values are applied individually under normal operating conditio and not valid simultaneously. mv TT C CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% (10); V EE = 4.2 V to 5.5 V (100) Symbol Parameter Condition I CC Power Supply Current ma I CC I CCZ Power Supply Current I OS Output Short Circuit Current V OUT = 0 V ma I OZ I OZ Output isable Current IG Output isable Current OW V OUT = 2.7 V V OUT = V A V OT Output IG Voltage I O = ma I O = 15 ma V V OT Output OW Voltage I O = 48 ma V NOTE: evice will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. evice specification limit values are applied individually under normal operating conditio and not valid simultaneously. 3
4 AC CARACTERISTICS: V CCT = 5.0 V ± 10%; V EE = 5.2 V ± 5% (10); V EE = 4.2 V to 5.5 V (100) Symbol Parameter Condition t P t P Propagation elay to Output C = 50 pf C = 200 pf C = 50 pf C = 200 pf C = 50 pf C = 200 pf t PZ Output isable Time C = 50 pf t PZ C = 200 pf t PZ Output Enable Time C = 50 pf t PZ C = 200 pf t s Setup Time to t h old Time to t w() Pulse Width, OW t R t F Output Rise/Fall Time 1.0 V V C = 50 pf C = 200 pf NOTE: evice will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. evice specification limit values are applied individually under normal operating conditio and not valid simultaneously ORERING INFORMATION evice Package Shipping MC10603FN PCC s / Rail MC10603FNG PCC s / Rail MC10603FNR2 PCC / Tape & Reel MC10603FNR2G PCC / Tape & Reel MC100603FN PCC s / Rail MC100603FNG PCC s / Rail MC100603FNR2 PCC / Tape & Reel MC100603FNR2G PCC / Tape & Reel For information on tape and reel specificatio, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BR8011/. 4
5 Resource Reference of Application Notes AN1405/ EC Clock istribution Techniques AN1406/ esigning with PEC (EC at +5.0 V) AN1503/ ECinPS I/O SPiCE Modeling Kit AN1504/ Metastability and the ECinPS Family AN1568/ Interfacing Between VS and EC AN1672/ The EC Tralator Guide AN8001/ Odd Number Counters esign AN8002/ Marking and ate Codes AN8020/ Termination of EC ogic evices AN8066/ Interfacing with ECinPS AN8090/ AC Characteristics of EC evices 5
6 PACKAGE IMSIONS PCC 28 FN SUFFI PASTIC PCC PACKAGE CASE ISSUE E N Y BRK B (0.180) M T M S N S U (0.180) M T M S N S M Z 28 1 V W VIEW G (50) S T M S N S Z A R (0.180) M T M S N S (0.180) M T M S N S (0.180) M T M S N S C E K1 G G1 J VIEW S (0.100) T SEATING PANE K F (0.180) M T M S N S (50) S T M S N S VIEW S NOTES: 1. ATUMS, M, AN N ETERMINE WERE TOP OF EA SOUER EITS PASTIC BOY AT MO PARTING INE. 2. IMSION G1, TRUE POSITION TO BE MEASURE AT ATUM T, SEATING PANE. 3. IMSIONS R AN U O NOT INCUE MO FAS. AOWABE MO FAS IS (50) PER SIE. 4. IMSIONING AN TOERANCING PER ANSI Y14.5M, CONTROING IMSION: INC. 6. TE PACKAGE TOP MAY BE SMAER TAN TE PACKAGE BOTTOM BY UP TO 0.0 (0.300). IMSIONS R AN U ARE ETERMINE AT TE OUTERMOST ETREMES OF TE PASTIC BOY ECUSIVE OF MO FAS, TIE BAR BURRS, GATE BURRS AN INTEREA FAS, BUT INCUING ANY MISMATC BETWE TE TOP AN BOTTOM OF TE PASTIC BOY. 7. IMSION OES NOT INCUE AMBAR PROTRUSION OR INTRUSION. TE AMBAR PROTRUSION(S) SA NOT CAUSE TE IMSION TO BE GREATER TAN (0.940). TE AMBAR INTRUSION(S) SA NOT CAUSE TE IMSION TO BE SMAER TAN (0.635). INCES MIIMETERS IM MIN MA MIN MA A B C E F G BSC 1.27 BSC J K R U V W Y Z G K
7 ECinPS is a trademark of Semiconductor Components Industries, C (SCIC). MEC 10 is a trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any licee under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORERING INFORMATION ITERATURE FUFIMT: iterature istribution Center for ON Semiconductor P.O. Box 5163, enver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative MC10603/
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Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break
NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10124L AWLYYWW
The MC024 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The MC024 has TTL compatible inputs, and MECL complementary
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
MJE18002G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 100 VOLTS 50 WATTS
MJE82G SWITCHMODE NPN Bipolar Power Traistor For Switching Power Supply Applicatio The MJE82G have an applicatio specific stateoftheart die designed for use in 22 V line operated Switchmode Power supplies
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device