Advanced Power MOSFET Concepts
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1 В. Jayant Baliga Advanced Power MOSFET Concepts Springer
2 Contents 1 Introduction Ideal Power Switching Waveforms Ideal and Typical Power MOSFET Characteristics Typical Power MOSFET Structures Ideal Drift Region for Unipolar Power Devices Charge-Coupled Structures: Ideal Specific On-Resistance Revised Breakdown Models for Silicon Typical Power MOSFET Applications DC-DC Sync-Buck Converter Variable-Frequency Motor Drive Summary 21 References 21 2 D-MOSFET Structure The D-MOSFET Structure Power D-MOSFET On-Resistance Channel Resistance Accumulation Resistance JFET Resistance Drift Region Resistance N + Substrate Resistance Drain and Source Contact Resistance Total On-Resistance Blocking Voltage Impact of Edge Termination Impact of Graded Doping Profile Output Characteristics Simulation Example Device Capacitances Simulation Example 49 xi
3 xii Contents 2.6 Gate Charge Simulation Example Device Figures of Merit Discussion 56 References 61 3 U-MOSFET Structure The U-MOSFET Structure Power U-MOSFET On-Resistance Channel Resistance Accumulation Resistance Drift Region Resistance Total On-Resistance Blocking Voltage Impact of Edge Termination Impact of Graded Doping Profile Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Thick Trench Bottom Oxide Structure On-Resistance Reverse Transfer Capacitance GateCharge Device Figures-of-Merit High Voltage Devices Simulation Results Inductive Load Turn-Off Characteristics Simulation Results Ill 3.11 Discussion 112 References SC-MOSFET Structure The SC-MOSFET Structure Power SC-MOSFET On-Resistance Channel Resistance Accumulation Resistance JFET Resistance Drift Region Resistance Total On-Resistance 127
4 4.3 Blocking Voltage Impact of Edge Termination Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Discussion 153 References 158 CC-MOSFET Structure The CC-MOSFET Structure Charge-Coupling Physics and Blocking Voltage Simulation Results Power CC-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example GateCharge Simulation Example Device Figures of Merit Edge Termination Simulation Example High Voltage Devices Simulation Results Process Sensitivity Analysis Discussion 235 References 239 GD-MOSFET Structure The GD-MOSFET Structure Charge-Coupling Physics and Blocking Voltage Simulation Results Power GD-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region 266 xiii
5 xiv Contents Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example GateCharge Simulation Example Device Figures of Merit Edge Termination High Voltage Devices Simulation Results Process Sensitivity Analysis Inductive Load Turn-Off Characteristics Simulation Results Discussion 317 References SJ-MOSFET Structure The SJ-MOSFET Structure Charge-Coupling Physics Simulation Results Power SJ-MOSFET On-Resistance Channel Resistance Accumulation Resistance for Current Spreading Region Drift Region Resistance Total On-Resistance Output Characteristics Simulation Example Device Capacitances Simulation Example Gate Charge Simulation Example Device Figures of Merit Edge Termination Simulation Example High Voltage Devices Simulation Results Process Sensitivity Analysis Inductive Load Turn-Off Characteristics Simulation Results Discussion 391 References 396
6 XV 8 Integral Diode Power MOSFET Body Diode Computer Power Supplies Power U-MOSFET Structure Power CC-MOSFET Structure Power JBSFET Structure Motor Control Application Power U-MOSFET Structure Power JBSFET Structure Power GD-MOSFET Structure Power GD-JBSFET Structure Power SJ-MOSFET Structure Power SJ-JBSFET Structure Discussion Low-Voltage Devices High-Voltage Devices 474 References SiC Planar MOSFET Structures Shielded Planar Inversion-Mode MOSFET Structure BlockingMode Threshold Voltage On-State Resistance Capacitances GateCharge Device Figures of Merit Inductive Load Turn-Off Characteristics Body-Diode Characteristics Shielded Planar ACCUFET Structure BlockingMode Threshold Voltage On-State Resistance Capacitances GateCharge Device Figures of Merit Inductive Load Turn-Off Characteristics Body-Diode Characteristics Discussion 531 References Synopsis Computer Power Supplies Inadvertent Turn-On Suppression Device Active Area 539
7 xvi Contents Switching Power Losses Input Capacitance Device Comparison High Voltage Motor Control Device Comparison Summary 552 References 552 About the Author 553 Index 557
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