27mW - 650V SiC Cascode UJ3C065030K3S Datasheet. Description. Typical Applications. Maximum Ratings

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1 Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. 27mW - 65V SiC Cascode UJ3C653K3S 1 2 CASE 3 G (1) CASE D (2) S (3) Part Number Package Marking UJ3C653K3S TO-247-3L UJ3C653K3S Features Typical Applications Typical on-resistance R DS(on),typ of 27mW EV charging Maximum operating temperature of 175 C PV inverters Excellent reverse recovery Switch mode power supplies Low gate charge Power factor correction modules Low intrinsic capacitance Motor drives ESD protected, HBM class 2 Induction heating Maximum Ratings Drain-source voltage Gate-source voltage Parameter Continuous drain current 1 Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8 from case for 5 seconds 1 Limited by T J,max 2 Pulse width t p limited by T J,max 3 Starting T J = 25 C Symbol V DS V GS I DM E AS P tot Test Conditions DC T C =25 C T C =1 C Pulsed drain current 2 T C =25 C 23 Single pulsed avalanche energy 3 L=15mH, I AS =4A Power dissipation I D T C =25 C T J,max 175 C T J, T STG -55 to 175 C to +25 T L 25 C V V A A A mj W Rev. C, December For more information go to

2 Electrical Characteristics (T J = +25 C unless otherwise specified) 27mW - 65V SiC Cascode UJ3C653K3S Typical Performance - Static Parameter Symbol Test Conditions Min Typ Max Drain-source breakdown voltage BV DS V GS =V, I D =1mA 65 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance V DS =65V, 6 15 V GS =V, T J =25 C I DSS ma V DS =65V, 3 V GS =V, T J =175 C V DS =V, T j =25 C, I GSS 6 2 ma V GS =-2V / +2V R DS(on) V GS =12V, I D =5A, T J =25 C V GS =12V, I D =5A, T J =175 C V G(th) V DS =5V, I D =1mA V R G f=1mhz, open drain 4.5 W 43 mw Typical Performance - Reverse Diode Diode continuous forward current 1 Diode pulse current 2 Forward voltage Parameter Symbol Test Conditions Min Typ Max I S T C =25 C 85 A I S,pulse T C =25 C 23 A V FSD V GS =V, I F =2A, T J =25 C V GS =V, I F =2A, T J =175 C V Reverse recovery charge Reverse recovery time Q rr V R =4V, I F =5A, V GS =V, R G_EXT =2W 4 nc di/dt=155a/ms, t rr T J =15 C 33 ns Rev. C, December For more information go to

3 Typical Performance - Dynamic 27mW - 65V SiC Cascode UJ3C653K3S Parameter symbol Test Conditions Min Typ Max Input capacitance C iss V DS =1V, 15 Output capacitance C oss V GS =V, 32 Reverse transfer capacitance C rss f=1khz 2.3 Effective output capacitance, energy related Effective output capacitance, time related V DS =V to 4V, C oss(er) 23 pf V GS =V V DS =V to 4V, C oss(tr) 52 pf V GS =V C OSS stored energy E oss V DS =4V, V GS =V 18.5 mj Total gate charge Gate-drain charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Q G 51 V Q DS =4V, I D =5A, GD 11 V GS =-5V to 15V Q GS 19 t d(on) 44 t r V DS =4V, I D =5A, Gate Driver=-5V to +15V, 26 t d(off) Turn-on R G,EXT =1W, 63 t f Turn-off R G,EXT =2W 17 E Inductive Load, ON 657 FWD: UJ3D653TS E OFF T 33 J =15 C E TOTAL 987 pf nc ns mj Thermal Characteristics Parameter symbol Test Conditions Min Typ Max Thermal resistance, junction-to-case R qjc C/W Rev. C, December For more information go to

4 On Resistance, R DS_ON (P.U.) Typical Performance Diagrams 27mW - 65V SiC Cascode UJ3C653K3S Vgs = 15V Vgs = 1V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 1 5 Vgs = 15V Vgs = 1V Vgs = 7V Vgs = 6.5V Figure 1 Typical output characteristics at T J = - 55 C, tp < 25 m s Figure 2 Typical output characteristics at T J = 25 C, tp < 25 m s Vgs = 15V Vgs = 1V Vgs = 7V Vgs = 6.5V Vgs = 6V Junction Temperature, T J ( C) Figure 3 Typical output characteristics at T J = 175 C, tp < 25 m s Figure 4 Normalized on-resistance vs. temperature at V GS = 12V and I D = 5A Rev. C, December For more information go to

5 Threshold Voltage, V th (V) Gate-Source Voltage, V GS (V) On-Resistance, R DS(on) (mw) 27mW - 65V SiC Cascode UJ3C653K3S Tj = 175 C Tj = 25 C Tj = - 55 C Tj = -55 C Tj = 25 C Tj = 175 C Gate-Source Voltage, V GS (V) Figure 5 Typical drain-source on-resistance at V GS = 12V Figure 6 Typical transfer characteristics at V DS = 5V Junction Temperature, T J ( C) Gate Charge, Q G (nc) Figure 7 Threshold voltage vs. T J Figure 8 Typical gate charge at V DS = 5V and I D = 1mA at V DS = 4V and I D = 5A Rev. C, December For more information go to

6 E OSS (mj) 27mW - 65V SiC Cascode UJ3C653K3S -25 Vgs = -5V Vgs = V Vgs = 5V -25 Vgs = - 5V Vgs = V Vgs = 5V Figure 9 3rd quadrant characteristics Figure 1 3rd quadrant characteristics at T J = - 55 C at T J = 25 C Vgs = - 5V Vgs = V Vgs = 5V Figure 11 3rd quadrant characteristics at T J = 175 C Figure 12 Typical stored energy in C OSS at V GS = V Rev. C, December For more information go to

7 Power Dissipation, P tot (W) Thermal Impedance, Z qjc ( C/W) Capacitance, C (pf) DC 27mW - 65V SiC Cascode UJ3C653K3S C iss 8 1 C oss C rss Case Temperature, T C ( C) Figure 13 Typical capacitances at 1kHz and V GS = V Figure 14 DC drain current derating Case Temperature, T C ( C) Figure 15 Total power dissipation.1.1 D =.5 D =.3 D =.1 D =.5 D =.2 D =.1 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Pulse Time, t p (s) Figure 16 Maximum transient thermal impedance Rev. C, December For more information go to

8 Turn-on Energy, Eon (mj) Turn-Off Energy, Eoff (mj) Switching Energy (mj) 27mW - 65V SiC Cascode UJ3C653K3S DC 1ms 1ms 1ms 1ms 1ms V DD = 4V, V GS = -5V/15V R G_ON = 1W, R G_OFF = 2W FWD: UJ3D653TS Etot Eon Eoff Figure 17 Safe operation area Figure 18 Clamped inductive switching energy T c = 25 C, D =, Parameter t p vs. drain current at T J = 15 C V DD = 4V, V GS = -5V/15V I D = 5A, T J = 15 C FWD: UJ3D653TS V DD = 4V, V GS = -5V/15V I D = 5A, T J = 15 C FWD: UJ3D653TS Total External R G, R G,EXT_ON (W) Total External R G, R G,EXT_OFF (W) Figure 19 Clamped inductive switching Figure 2 Clamped inductive switching turn-on energy vs. R G,EXT_ON turn-off energy vs. R G,EXT_OFF Rev. C, December For more information go to

9 Switching Energy (mj) 27mW - 65V SiC Cascode UJ3C653K3S Etot Eon Eoff 4 2 V DD = 4V, V GS = -5V/15V R G_ON = 1W, R G_OFF = 2W FWD: UJ3D653TS Junction Temperature, T J ( C) Figure 21 Clamped inductive switching energy vs. junction temperature at I D = 5A Applications Information SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (R DS(on) ), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on cascode operation, see Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. C, December For more information go to