Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance
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- Gyles Hunter
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1 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247- package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. 3mW - 65V SiC Cascode UF3C653K4S CASE G (4) KS (3) CASE D (1) S (2) Features Typical Applications Typical on-resistance R DS(on),typ of 3mW EV charging Maximum operating temperature of 175 C PV inverters Excellent reverse recovery Switch mode power supplies Low gate charge Power factor correction modules Low intrinsic capacitance Motor drives ESD protected, HBM class 2 Induction heating TO-247-4L package for faster switching, clean gate waveforms Maximum Ratings Drain-source voltage Gate-source voltage Parameter Continuous drain current 1 Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8 from case for 5 seconds 1 Limited by T J,max 2 Pulse width t p limited by T J,max 3 Starting T J = 25 C Symbol V DS V GS I DM E AS P tot Test Conditions DC T C =25 C T C =1 C Pulsed drain current 2 T C =25 C 23 Single pulsed avalanche energy 3 L=15mH, I AS =4A Power dissipation I D T C =25 C Part Number Package Marking UF3C653K4S TO-247-4L UF3C653K4S T J,max 175 C T J, T STG -55 to 175 C to +25 T L 25 C V V A A A mj W Preliminary, March For more information go to
2 Electrical Characteristics (T J = +25 C unless otherwise specified) Typical Performance - Static 3mW - 65V SiC Cascode UF3C653K4S Parameter Symbol Test Conditions Min Typ Max Drain-source breakdown voltage BV DS V GS =V, I D =1mA 65 V Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance V DS =65V, 6 15 V GS =V, T J =25 C I DSS ma V DS =65V, 3 V GS =V, T J =175 C V DS =V, T j =25 C, I GSS 6 2 ma V GS =-2V / +2V R DS(on) V GS =12V, I D =5A, T J =25 C V GS =12V, I D =5A, T J =175 C 3 35 V G(th) V DS =5V, I D =1mA V R G f=1mhz, open drain 4.5 W 48 mw Typical Performance - Reverse Diode Diode continuous forward current 1 Diode pulse current 2 Forward voltage Reverse recovery charge Reverse recovery time Reverse recovery charge Reverse recovery time Parameter Symbol Test Conditions Min Typ Max I S T C =25 C 85 A I S,pulse T C =25 C 23 A V FSD V GS =V, I F =2A, T J =25 C V GS =V, I F =2A, T J =175 C V R =4V, I F =5A, Q rr 425 nc V GS =-5V, R G_EXT =1W di/dt=265a/ms, t rr 25 ns T J =25 C V R =4V, I F =5A, Q rr 28 nc V GS =-5V, R G_EXT =1W di/dt=265a/ms, t rr 2 ns T J =15 C V Preliminary, March For more information go to
3 Typical Performance - Dynamic 3mW - 65V SiC Cascode UF3C653K4S Parameter symbol Test Conditions Min Typ Max Input capacitance C iss V DS =1V, 15 Output capacitance C oss V GS =V, 32 Reverse transfer capacitance C rss f=1khz 2.3 Effective output capacitance, energy related Effective output capacitance, time related V DS =V to 4V, C oss(er) 23 pf V GS =V V DS =V to 4V, C oss(tr) 52 pf V GS =V C OSS stored energy E oss V DS =4V, V GS =V 18.5 mj Total gate charge Gate-drain charge Gate-source charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Q G 51 V Q DS =4V, I D =5A, GD 11 V GS =-5V to 15V Q GS 19 t d(on) V DS =4V, I D =5A, Gate 25 t r Driver=-5V to +12V, 31 t Turn-on R G,EXT =8.5W, d(off) 48 Turn-off R G,EXT =2W t f 12 Inductive Load, E ON FWD: same device with 31 E OFF V GS = -5V, R G = 1W 171 E TOTAL T J =25 C 481 t d(on) V DS =4V, I D =5A, Gate 22 t r Driver=-5V to +12V, 27 t Turn-on R G,EXT =8.5W, d(off) 48 Turn-off R G,EXT =2W t f 1 Inductive Load, E ON FWD: same device with 247 E OFF V GS = -5V, R G = 1W 114 E TOTAL T J =15 C 361 pf nc ns mj ns mj Thermal Characteristics Parameter symbol Test Conditions Min Typ Max Thermal resistance, junction-to-case R qjc C/W Preliminary, March For more information go to
4 On Resistance, R DS_ON (P.U.) Typical Performance Diagrams 3mW - 65V SiC Cascode UF3C653K4S Vgs = 15V Vgs = 1V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 1 5 Vgs = 15V Vgs = 1V Vgs = 7V Vgs = 6.5V Figure 1 Typical output characteristics at T J = - 55 C, tp < 25 m s Figure 2 Typical output characteristics at T J = 25 C, tp < 25 m s Vgs = 15V Vgs = 1V Vgs = 7V Vgs = 6.5V Vgs = 6V Junction Temperature, T J ( C) Figure 3 Typical output characteristics at T J = 175 C, tp < 25 m s Figure 4 Normalized on-resistance vs. temperature at V GS = 12V and I D = 5A Preliminary, March For more information go to
5 Threshold Voltage, V th (V) Gate-Source Voltage, V GS (V) On-Resistance, R DS(on) (mw) 3mW - 65V SiC Cascode UF3C653K4S Tj = 175 C Tj = 25 C Tj = - 55 C Tj = -55 C Tj = 25 C Tj = 175 C Gate-Source Voltage, V GS (V) Figure 5 Typical drain-source on-resistance at V GS = 12V Figure 6 Typical transfer characteristics at V DS = 5V Junction Temperature, T J ( C) Gate Charge, Q G (nc) Figure 7 Threshold voltage vs. T J Figure 8 Typical gate charge at V DS = 5V and I D = 1mA at V DS = 4V and I D = 5A Preliminary, March For more information go to
6 E OSS (mj) 3mW - 65V SiC Cascode UF3C653K4S -25 Vgs = -5V Vgs = V Vgs = 5V -25 Vgs = - 5V Vgs = V Vgs = 5V Figure 9 3rd quadrant characteristics Figure 1 3rd quadrant characteristics at T J = - 55 C at T J = 25 C Vgs = - 5V Vgs = V Vgs = 5V Figure 11 3rd quadrant characteristics at T J = 175 C Figure 12 Typical stored energy in C OSS at V GS = V Preliminary, March For more information go to
7 Power Dissipation, P tot (W) Thermal Impedance, Z qjc ( C/W) Capacitance, C (pf) DC 3mW - 65V SiC Cascode UF3C653K4S C iss 8 1 C oss C rss Case Temperature, T C ( C) Figure 13 Typical capacitances at 1kHz and V GS = V Figure 14 DC drain current derating Case Temperature, T C ( C) Figure 15 Total power dissipation.1.1 D =.5 D =.3 D =.1 D =.5 D =.2 D =.1 Single Pulse.1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Pulse Time, t p (s) Figure 16 Maximum transient thermal impedance Preliminary, March For more information go to
8 Turn-on Energy, Eon (mj) Turn-Off Energy, Eoff (mj) Switching Energy (mj) 3mW - 65V SiC Cascode UF3C653K4S 1 1 1ms 1ms 1ms V DD = 4V, V GS = -5V/12V R G_ON =8.5W, R G_OFF = 2W FWD: same device with V GS =-5V, R G = 1W Etot Eon Eoff 1 DC 1ms 1ms Figure 17 Safe operation area Figure 18 Clamped inductive switching energy T c = 25 C, D =, Parameter t p vs. drain current at T J = 25 C V DD = 4V, V GS = -5V/12V I D = 5A, T J = 25 C FWD: same device with V GS = -5V, R G = 1W V DD = 4V, V GS = -5V/12V I D = 5A, T J = 25 C FWD: same device with V GS = -5V, R G = 1W Total External R G, R G,EXT_ON (W) Total External R G, R G,EXT_OFF (W) Figure 19 Clamped inductive switching Figure 2 Clamped inductive switching turn-on energy vs. R G,EXT_ON turn-off energy vs. R G,EXT_OFF Preliminary, March For more information go to
9 Switching Energy (mj) Qrr (nc) 3mW - 65V SiC Cascode UF3C653K4S V DD = 4V, V GS = -5V/12V R G_ON = 8.5W, R G_OFF = 2W FWD: same device with V GS =-5V, R G =1W Etot Eon Eoff V DD = 4V, I S = 5A, di/dt = 265A/ms, V GS = -5V, R G =1W Junction Temperature, T J ( C) Junction Temperature, T J ( C) Figure 21 Clamped inductive switching energy Figure 22 Reverse recovery charge Qrr vs. vs. junction temperature at I D = 5A junction temperture Applications Information SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (R DS(on) ), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on cascode operation, see Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Preliminary, March For more information go to
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General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
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TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL
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TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
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Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
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AOTL664 4V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Product Summary V DS I D (at
More informationTO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc
MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
More informationTO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast,
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More information10-PZ126PA080ME-M909F18Y. Maximum Ratings
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TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
More informationT C =25 unless otherwise specified
WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
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TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
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More informationT C =25 unless otherwise specified
800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
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More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
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TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source V DS (V) R DS(on) (Ω) I D (A) 900 5.1 @ V GS =10V 1.25 TO-251 (IPAK) TO-252 (DPAK) General Description The TSM3N90 N-Channel Power
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