Contents. Contents... v. Preface... xiii. Chapter 1 Introduction...1. Chapter 2 Significant Physical Effects In Modern MOSFETs...
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1 Contents Contents... v Preface... xiii Chapter 1 Introduction Compact MOSFET Modeling for Circuit Simulation The Trends of Compact MOSFET Modeling Modeling new physical effects High frequency (HF) analog compact models Simulation robustness and efficiency Model standardization...8 References...8 Chapter 2 Significant Physical Effects In Modern MOSFETs MOSFET Classification and Operation Strong inversion region (Vgs>Vth) Weak and moderate inversion or the subthreshold region Effects Impacting the Threshold Voltage Non-uniform doping effects Normal short channel effects...23
2 vi MOSFET Modeling & BSIM3 User s Guide Reverse short channel effects Normal narrow-width effects Reverse narrow-width effects Body bias effect and bulk charge effect Channel Charge Theory Accumulation Depletion Inversion Carrier Mobility Velocity Saturation Channel Length Modulation Substrate Current Due to Impact Ionization Polysilicon Gate Depletion Velocity Overshoot Effects Self-heating Effect Inversion Layer Quantization Effects...55 References Chapter 3 Threshold Voltage Model Threshold Voltage Model for Long Channel Devices Threshold Voltage Model with Short Channel Effects Charge sharing model Quasi 2-D models for drain induced barrier lowering effect Narrow Width Effect Model Threshold Voltage Model in BSIM3v Modeling of the vertical non-uniform doping effects Modeling of the RSCE due to lateral non-uniform channel doping Modeling of the short channel effect due to drain induced barrier lowering Modeling of the narrow width effects Complete Vth model in BSIM3v Helpful Hints References Chapter 4 I-V Model Essential Equations Describing the I-V Characteristics...105
3 CONTENTS vii 4.2 Channel Charge Density Model Channel charge model in the strong inversion region Channel charge model in the subthreshold region Continuous channel charge model of BSIM3v Continuous channel charge model with the effect of Vds Mobility Model Piece-wise mobility models Mobility models in BSIM3v I-V Model in the Strong Inversion Region I-V model in the linear (triode) region Drain voltage at current saturation, Vdsat Current and output resistance in the saturation region Subthreshold I-V Model Single Equation I-V model of BSIM3v Polysilicon Gate Depletion Effect Helpful Hints References Chapter 5 Capacitance Model Capacitance Components in a MOSFET Intrinsic Capacitance Model Meyer model Shortcomings of the Meyer model Charge-based capacitance model Extrinsic Capacitance Model Capacitance Model of BSIM3v Long channel capacitance model (capmod=0) Short channel capacitance (capmod=1) Single-equation short channel capacitance model (capmod=2) Short channel capacitance model with quantization effect (capmod=3) Channel Length/Width in Capacitance Model Helpful Hints References Chapter 6 Substrate Current Model Substrate Current Generation...211
4 viii MOSFET Modeling & BSIM3 User s Guide 6.2 Substrate Current Model in BSIM3v Helpful Hints References Chapter 7 Noise Model The Physical Mechanisms of Flicker (1/f) Noise The Physical Mechanism of Thermal Noise Flicker Noise Models in BSIM3v SPICE2 flicker noise model (noimod=1) Unified flicker noise model (noimod=2) Thermal Noise Models in BSIM3v Modified SPICE2 thermal noise model (noimod=1) BSIM3 thermal noise model (noimod=2) Helpful Hints References Chapter 8 Source/Drain Parasitics Model Parasitic Components in a MOSFET Models of Parasitic Components in BSIM3v Source and drain series resistances DC model of the source/drain diodes Capacitance model of the source/bulk and drain/bulk diodes Helpful Hints References Chapter 9 Temperature Dependence Model Temperature Effects in a MOSFET Temperature Dependence Models in BSIM3v Comparison of the Temperature-Effect Models with Measured Data Helpful Hints References Chapter 10 Non-quasi Static (NQS) Model The Necessity of Modeling NQS Effects
5 CONTENTS ix 10.2 The NQS Model in BSIM3v Physics basis and model derivation The BSIM3 NQS model Test Results of the NQS Model Helpful Hints References Chapter 11 BSIM3v3 Model Implementation General Structure of BSIM3v3 Model Implementation Robustness Consideration in the Implementation of BSIM3v Testing of Model Implementation Model Selectors of BSIM3v Helpful Hints References Chapter 12 Model Testing Requirements for a MOSFET Model in Circuit Simulation Benchmark Tests Benchmark Test Results Helpful Hints References Chapter 13 Model Parameter Extraction Overview of Model Parameter Extraction Parameter Extraction for BSIM3v Optimization and extraction strategy Extraction routines Binning Methodology Recommended Value Range of the Model Parameters Automated Parameter Extraction Tool References
6 x MOSFET Modeling & BSIM3 User s Guide Chapter 14 RF and Other Compact Model Applications RF Modeling Modeling of the gate resistance Modeling the substrate network A RF MOSFET model based on BSIM3v3 for GHz communication IC s Statistical Modeling Technology Extrapolation and Prediction Using BSIM3 Model References Appendix A BSIM3v3 Parameter Table A.1 Model control parameters A.2 Process parameters A.3 Parameters for Vth model A.4 Parameters for I-V model A.5 Parameters for capacitance model A. 6 Parameters for effective channel length/width in I-V model A. 7 Parameters for effective channel length/width in C-V model A.8 Parameters for substrate current model A.9 Parameters for noise models A. 10 Parameters for models of parasitic components A.11 Parameters for models of temperature effects A.12 Parameters for NQS model Appendix B BSIM3v3 Model Equations B.1 Vth equations B.2 Effective Vgs-Vth B.3 Mobility B.4 Drain saturation voltage B.5 Effective Vds B.6 Drain current expression B.7 Substrate current B.8 Polysilicon depletion effect B.9 Effective channel length and width B.10 Drain/Source resistance B.11 Capacitance model equations B.12 Noise model equations B.13 DC model of the source/drain diodes...443
7 CONTENTS xi B.14 Capacitance model of the source/bulk and drain/bulk diodes B.15 Temperature effects B.16 NQS model equations B.17 A note on the poly-gate depletion effect Appendix C Enhancements and Changes in BSIM3v3.1 versus BSIM3v C. 1 Enhancements C.2 Detailed changes Appendix D Enhancements and Changes in BSIM3v3.2 versus BSIM3v D.1 Enhancements D.2 Detailed changes Index
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