IRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω

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1 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S G S2 G2 PD IRF734 HEXFET Power MOSFET D D D2 D2 Top View V DSS = 55V R DS(on) = 0.050Ω The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. bsolute Maximum Ratings SO-8 Parameter Max. Units V DS Drain- Source Voltage 55 V I T C = 25 C Continuous Drain Current, V 0V 4.7 I T C = 70 C Continuous Drain Current, V 0V 3.8 I DM Pulsed Drain Current 38 P C = 25 C Power Dissipation 2.0 P C = 70 C Power Dissipation.3 W Linear Derating Factor 0.06 W/ C V GS Gate-to-Source Voltage ± 20 V V GSM Gate-to-Source Voltage Single Pulse tp<0µs 30 V E S Single Pulse valanche Energy 72 dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W 4//05

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = m V GS = 0V, I D = 4.7 R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 4.5V, I D = 3.8 V GS(th) Gate Threshold Voltage.0 V V DS = V GS, I D = 250µ g fs Forward Transconductance 7.9 S V DS = 0V, I D = 4.5 I DSS Drain-to-Source Leakage Current 2.0 V DS = 55V, V GS = 0V µ 25 V DS = 55V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage - V GS = -20V n Gate-to-Source Reverse Leakage V GS = 20V Q g Total Gate Charge I D = 4.5 Q gs Gate-to-Source Charge nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge V GS = 0V, See Fig. 0 t d(on) Turn-On Delay Time V DD = 28V t r Rise Time I D =.0 ns t d(off) Turn-Off Delay Time R G = 6.0Ω t f Fall Time 3 20 R D = 28Ω, C iss Input Capacitance 740 V GS = 0V C oss Output Capacitance 90 pf V DS = 25V C rss Reverse Transfer Capacitance 7 ƒ =.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.0 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 38 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.2 V T J = 25 C, I S = 2.0, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.0 Q rr Reverse RecoveryCharge nc di/dt = -/µs ƒ D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 6.5mH R G = 25Ω, I S = 4.7. (See Figure 8) ƒ I SD 4.7, di/dt 220/µs, V DD V (BR)DSS, T J 50 C Pulse width 300µs; duty cycle 2%. When mounted on inch square copper board, t<0 sec 2

3 I D, Drain-to-Source Current () 0 VGS VGS TOP 5V 2V 0V 8.0V TOP 5V 2V 0V 8.0V 6.0V 4.5V 6.0V 4.5V 4.0V 4.0V 3.5V BOTTOM 3.0V 3.5V BOTTOM 3.0V 3.0V I D, Drain-to-Source Current () 0 3.0V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 50 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () 0 T J = 25 C T J = 50 C I SD, Reverse Drain Current () 0 T J = 50 C T J = 25 C V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) V GS = 0 V V SD,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage 3

4 R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = V GS = 0V T J, Junction Temperature ( C) R DS (on), Drain-to-Source On Resistance (Ω) VGS = 4.5V VGS = 0V I D, Drain Current () Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS(on), Drain-to-Source On Resistance ( Ω ) V GS I = 4.7 D, Gate-to-Source Voltage (V) E S, Single Pulse valanche Energy (mj) TOP BOTTOM I D Starting T, Junction Temperature ( J C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum valanche Energy Vs. Drain Current 4

5 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 4.5 V DS = 48V V DS = 30V V DS = 2V C rss 0 0 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 0. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thj ) 0 D = PDM 0.0 t SINGLE PULSE (THERML RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thj + T t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 SO-8 Package Outline Dimensions are shown in millimeters (inches) E 6 6X e D B H 0.25 [.00] DIM INCHES MILLIMETERS MIN MX MIN MX b c D E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. DIMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.00]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 DT E CODE (YWW) P = DE S IGNT E S L E D-F RE E PRODUCT (OPTIONL) Y = LST DIGIT OF THE YER WW = WEEK = SSEMBLY SITE CODE LOT CODE PRT NUMBER 6

7 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information. 04/05 7